基于GMPLS控制平面的ASON组播

阐述了利用自动交换光网络(ASON)实现组播的意义,分析了ASON组播的GMPLS信令协议、路由协议,给出了通过改进ASON现有技术实现组播的可行方案,包括信令过程和路由算法,得出结论并对ASON组播的前景作出展望。     

基于MPLS VPN的组播研究

研究了基于多协议标签交换（MPLS）的虚拟私有网络（VPN）技术原理,给出了基于MPLS VPN的组播模型,同时对该模型涉及到的关键技术包括标签交换的发起方式、信令选择、组播路由协议及对MPLS VPN组播实现技术的影响进行了分析,在解决实际网络应用时,不仅考虑了其技术的可行性和先进性,还考虑了目前网络中采用协议的兼容性。并提出了一种可行的MPLS VPN组播方案。     

一种新型的ASON安全组播信令协议

针对自动变换光网络组播信令过程中存在的安全威胁,提出了一种高效的基于GMPLS RSVP-TE的安全组播信令协议。该协议采用P2MP(point-to-multipoint)信令模型,通过数字签名和消息反馈等安全机制,对信令消息中的不变对象和重要可变对象实施保护。考虑到组播成员的动态变化特性,采用高效的组密钥管理策略保证组通信的前向安全性和后向安全性。经仿真实验及分析表明,该协议在保证安全建立组播树的同时,取得了较好的连接阻塞性能和较低的密钥更新时延。     

基于RSVP-TE的组播信令协议的实现机制及性能研究

对自动交换光网络（AsON）中基于RSVP—TE的组播扩展进行了研究。提出了在现有信令架构上实现组播功能的几个关键问题，并就基本技术进行了讨论。在此基础上，介绍了4个RSVP—TE协议扩展模型，并通过仿真详细比较了它们的开销和性能。文中的理论分析和仿真结果对光网络中组播协议的设计和选择提供了重要的参考依据。     

基于SIP/SIMPLE的网络会议的实现方案

即时通讯软件已成为继电子邮件和Web之后的第三大互联网应用;同时,作为即时通讯的形式之一,网络会议型的服务和即时通讯平台的融合将随着技术的不断成熟和进步而受到越来越多的重视.基于SIP/SIMPLE协议和IP组播技术的网络音频会议的实现模型,描述了如何通过SIP信令的交互完成对基于组播的会话业务的控制.该方案在提高了网络和主机资源的利用率的同时,借助SIP协议自身的简单性和可扩展性,使得不仅实现简便,而且可以在此基础上提供更加丰富的业务及控制功能.     

NSIS的研究与实现

业务日趋多样化的下一代网络迫切地需要一种灵活的基于IP的通用网络信令体系,现有的IP网络信令协议(如RSVP)在安全性、灵活性、扩展性等方面存在着许多缺陷,NSIS信令协议就是针对这些要求提出的,其在应用扩展性和安全性等方面有较好的突破.主要阐述了NSIS的模块化两层体系结构--下层的NSIS信令传输层协议(NTLP)负责信令消息的传输和状态管理,上层的NSIS信令层协议(NSLP)负责各种信令应用.并将NSIS与现有的RSVP协议进行比较,最后介绍了NSIS软件平台的实现及进一步研究的切入点.     

稀疏分光WDM网络组播协议设计

重点描述了在稀疏分光波分复用(WDM)网络中实现组播的协议流程问题,通过扩展RSVP和OSPF协议,设计出在稀疏分光WDM网络中组播森林的建立连接协议流程,并给出了状态机模型.     

NGN的关键技术——Sigtran及其应用

Sigtran（信令传送）是支持通过IP网络传输SCN（电路交换网络）信令协议的协议栈.该协议栈支持SCN信令协议分层模型定义中的层间标准原语接口,从而保证已有的SCN信令应用可以未经修改地使用,同时也利用标准的IP传输协议作为传输底层,通过增加自身的功能来满足SCN信令的特殊传输要求.主要介绍Sigtran协议的应用背景、实现功能、基本概念、组成结构以及相关协议,最后介绍Sigtran在现网中的应用.     

IPv6组播路由协议仿真研究

分析了PIMIPv6组播路由协议的原理．在NS2网络模拟环境下设计了组播网络仿真模型，编写了实现PIM组播路由协议的代码。成功模拟了协议运行过程。在此基础上。对比分析了不同PIM组播路由协议的性能特点，并指出了其应用特性。     

组播——企业网络优化不可忽视的技术

网络已经无处不在了,不管是网络的网管人员还是使用人员.对于网络速度是非常在乎的,如何有效的利用带宽.避免不必要的速度损失,从而达到对整个网络的优化.就是一个非常重要的问题.而影响网络质量的因素很多.网络结构.网络应用.路由协议以及组成网络的交换机、路由器等都是影响网络的重要因素.IP组播技术实现了IP网络中点到多点的高效数据传送.因为组播能够有效地节约网络带宽.降低网络负载,所以在实时数据传送,多媒体会议.数据拷贝.游戏和仿真等诸多方面都有广泛的应用.本文介绍了组播的基本概念和目前通用的组播协议.以及组播组网的基本方案.探讨组播技术对于网络优化的意义.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-