电离层延迟对分布式SAR编队相对定位的影响

建立星载GPS单层电离层延迟模型,利用CHAMP卫星双频GPS观测资料确定的单层投影高度为580 km.仿真分析了电离层延迟对分布式SAR编队CDGPS(载波相位差分GPS)相对定位的影响,主要分析结果表明:在mm量级的星间相对定位中,电离层延迟影响不可被忽略;太阳活动对相对定位的影响显著,当星间距离取1 km,在太阳活动强年,由差分电离层延迟引起的相对定位误差达到8.5mm,是太阳活动弱年的2倍.     

支持向量机方法在电离层短期预报中的应用

支持向量机是一种崭新的机器学习方法,将支持向量机方法应用于电离层参数短期预报,提前一小时预报了电离层临界频率foF2.用海口站太阳活动高低年各个季节的历史数据进行了检验,预报误差在不同的太阳活动水平不同的季节各不相同.预报结果与IRI比较的结果表明,支持向量机方法具有较高的预报精度,将支持向量机方法用于电离层短期预报是可行的.     

一种基于分步线性最优估计的全球中低纬区域电离层foF2重构方法

电离层F₂层临界频率f_oF₂是短波通信、探测和电子对抗等领域最为重要的应用参数之一. 针对全球范围内电离层测高仪分布较为稀疏的特点,基于全球电离层无线电观测站（Global Ionospheric Radio Observatory,GIRO）的测高仪实测数据,采用分步线性最优估计方法对电离层CCIR/URSI系数进行调整,实现了全球中低纬区域电离层f_oF₂的重构. 对2010—2016年的电离层f_oF₂重构结果进行分析,结果表明:在纬度变化上,中纬区域重构误差要低于低纬区域;在年变化上,重构的绝对误差和均方根误差有随太阳活动强度增强而增大的趋势,重构的相对误差无明显年变化;在季节变化上,夏季重构误差最小,其他三个季节相差不大;在地方时变化上,白天的重构误差低于夜间. 总体而言,相比于国际参考电离层(international reference ionosphere,IRI)模型,电离层f_oF₂重构的绝对误差和均方根误差分别下降了约38%和34%,验证了本文方法的有效性和可靠性.     

磁扰和磁静期间南极McMurdo地区电离层闪烁统计特征的对比分析

利用南极McMurdo站（地理经纬度（166.73°E,77.88°S）,地磁纬度80°S）2011-2014年电离层闪烁观测数据,对比分析了磁扰和磁静期间电离层闪烁发生率的周日分布、季节分布,以及随太阳活动变化的统计特征.结果表明:磁扰和磁静期间电离层闪烁的周日分布均在磁中午附近和磁子夜后出现峰值,而磁扰期的闪烁发生率显著高于磁静期,并且闪烁发生范围向低纬和高纬方向扩展;春秋季电离层闪烁发生率明显高于夏冬季,每年的2、3月份和9、10月份高发,冬季6月份发生率最低;磁扰期的季节性特征比磁静期更为明显,且闪烁发生范围、发生频率均明显大于磁静期;太阳活动对电离层闪烁的影响十分显著,随着太阳活动的增强,闪烁发生的范围和发生频率均明显增大.该研究结果有助于了解极区电离层闪烁的整体分布情况,将为极区电离层闪烁建模以及闪烁预报提供支持,对极区通信、导航定位等有着重要的应用价值.     

新乡观测的电离层TEC和板厚的统计与建模研究

利用１９８２年至１９９０年在新乡接收ＥＴＳ－Ⅱ同步卫星１３６ＭＨｚ信标所取得的电离层总电子含量ＴＥＣ月中值和相应的Ｆ２层临界频率，计算了电离层板厚，分析比较了电离层板厚、ＴＥＣ和Ｆ２层临界频率的日变化、季节变化和太阳活动变化的差异，给出了板层随太阳活动的抛物关系，建立了新乡的电离层板厚模式，并与国际参考电离层和中国参考电离层模式的结果进行了比较。结果表明，本文的板厚模式预报的结果在太阳活动高年较国     

天波雷达电离层信道可用度统计方法研究

分析了影响天波超视距雷达(OTHR)可用度的电离层信道因素,依据一个太阳活动周期(11年)的电离层不稳定性数据,统计了中纬、中低纬和低纬地区的电离层信道可用度,OTHR频率管理系统综合考虑了电离层的基本特性以及高频干扰频谱分布特性,首次提出了基于频率管理系统工作频率表数据的电离层信道可用度的短期统计方法,并对太阳活动低年特定月份典型时刻(日出、日落、正午和夜间)的电离层信道可用度进行了统计分析.     

电离层的探测与骚扰预报

电离层是指位于地面60km至1000km处的被电离了的大气层。电离层对电波传播的影响与人类活动密切相关,通过对电离层的探测可获取电离层物理特性参量随日、季节、年、太阳活动、地理环境等变化的分布、变化规律。本文主要讲述了电离层探测的方法、太阳活动对电离层的影响、电离层扰动对人类的影响、对电离层进行常规监测及骚扰预报的重要性以及电离层扰动与地震的关系。     

2020年6月21日日环食电离层Es响应研究

为研究日环食期间电离层Es演化过程,利用VHF相干散射雷达和便携式垂测仪在2020年6月21日日环食期间开展联合观测试验,得到日环食期间h′Es和f_oEs均呈现出先降低再增强的变化形态. 分析表明,该演化过程类似于快速日出日落对电离层Es的影响,其成因是日环食期间太阳活动作为辐射源经历了快速减弱、复原的一个过程. 本次试验观测结果对研究和完善电离层Es形成机制、机理有重要意义.     

太阳活动对赤道电离层闪烁影响的初步研究

利用赤道地区瓦尼莫(Vanimo)站太阳活动高年到低年(2000-2009)L波段电离层闪烁数据,分析了闪烁随太阳活动从高年到低年的形态特征,统计研究了太阳黑子数与闪烁发生率相关性,并初步探讨了太阳活动影响闪烁的机制。统计研究结果表明:太阳活动中、高年期间,闪烁发生率有明显的季节、月、地方时变化规律;低年闪烁表现平静,以弱闪烁为主,且无明显规律;太阳黑子对闪烁发生率表现出一定调制作用,随着黑子数从高年到低年的减少,闪烁发生率呈下降趋势,中、强闪烁表现的更为突出。说明太阳活动对中、强闪烁的影响比弱闪烁更明显,但其影响机制仍须大量统计分析和理论研究的进一步揭示。     

中国地区电离层f_oF_2的重构方法研究

提出了一种以中国参考电离层为背景的中国地区电离层foF2的区域重构方法,该方法根据foF2时间和空间相关性,将foF2的估计值与中国参考电离层模型值之差的相对值作为区域变化参量,引入电离层距离、经度因子和纬度因子等参数实现了电离层区域重构.利用我国电离层foF2的数据,对该方法的重构精度进行了评估,实现了中国地区的电离层区域预报.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its