输出功率达230W的绿光固体激光器

介绍了一种高功率Nd:YAG绿光激光器实验装置,采用非垂直入射式漫反聚光腔,解决了高泵浦功率密度下增益分布均匀性问题,采用双泵浦头串联的对称直通谐振腔结构,在LD泵浦功率1 400 W时,获得了400 W基频输出,采用Ⅰ类温度匹配方式LBO晶体内腔倍频,在声光Q开关重复频率10 kHz条件下,获得了平均功率达230 W的532 nm绿光激光输出,脉冲宽度小于56 ns,光一光转换效率16.8%,光束质量约30 mm·mrad.该激光器结构简单,可靠性好,适合于工程应用.     

同步泵浦声光调Q全固态脉冲激光器

本文首次提出了同步泵浦声光调Q全固态脉冲激光器，分析了其基本理论，设计并实现了这种新型激光器。它克服了现有小型全固态脉冲激光器存在寄生多脉冲和峰值功率还不够高的缺点，用2W LD的泵浦时，得到了重复频率为4．5kHz、峰值功率为6kW、脉宽为18ns、无寄生脉冲的连续脉冲激光输出，可以较好地满足激光测距和激光雷达对此类激光器性能的要求。本文对实验方案、设备和结果进行了详细的描述。     

小型化高重频窄脉冲声光Q开关DPL

介绍了小型化高重频声光Q开关DPL研制过程中的一些实验进展和相关产品样机。实验中，通过参数的优化选择，在激光二极管的泵浦峰值功率5 W，重复频率2 500 Hz下得到脉冲能量为81.5 μJ，脉冲宽度约为7.4 ns的激光输出，此时激光器的峰值功率为11 kW，光光转换效率14%，光束质量因子M2约为2.1。     

LD泵浦双调Q Nd:GdVO4激光器实验研究

报道了采用半导体激光器(LD)单端泵浦Nd:GdVO4晶体,在谐振腔内同时利用声光器件、Cr4 :YAG晶体,实现1.06μm激光的双调Q运转.当泵浦功率为7.7w,重复频率为10kHz时,得到最短脉冲宽度20ns,单脉冲能量45.8μJ及相应峰值功率2.29kW的激光脉冲.     

LD泵浦双调Q Nd∶GdVO_4激光器实验研究

报道了采用半导体激光器(LD)单端泵浦Nd:GdVO4晶体,在谐振腔内同时利用声光器件、Cr4+:YAG晶体,实现1.06μm激光的双调Q运转。当泵浦功率为7.7W,重复频率为10kHz时,得到最短脉冲宽度20ns,单脉冲能量45.8μJ及相应峰值功率2.29kW的激光脉冲。     

LD泵浦Nd:GdVO_4/KTP双调Q绿光激光器实验研究

采用半导体激光器(LD)单端泵浦Nd:GdVO4晶体,在谐振腔内同时利用声光器件、Cr4+:YAG晶体和KTP晶体,实现532nm内腔倍频双调Q绿光运转。当泵浦功率为7.7W,重复频率为10kHz时,获得最短脉冲宽度为24ns,单脉冲能量为32.4μJ及相应峰值功率为1.35kW的激光脉冲。     

高重频双端泵浦全固态Nd∶YVO4 声光调Q激光器

采用国产大功率光纤束模块,双端面泵浦两块Nd∶YVO4 激光晶体,采用高衍射效率声光调Q技术,在注入总功率50W,最高重频100kHz的条件下,获得平均输出功率为18. 21W的1064nm激光输出。脉冲宽度为62ns,相应光光转换效率为36. 4%。在最低重频10kHz时,具有最大单脉冲能量1. 3mJ ,相应脉冲宽度为16. 4ns,峰值功率达到了80kW。     

高重频双端泵浦全固态Nd：YVO4声光调Q激光器

采用国产大功率光纤束模块，双端面泵浦两块Nd：YVO4激光晶体，采用高衍射效率声光调Q技术，在注入总功率50W，最高重频100kHz的条件下，获得平均输出功率为18．21W的1064nm激光输出。脉冲宽度为62ns，相应光光转换效率为36．4％。在最低重频10kHz时，具有最大单脉冲能量1．3mJ，相应脉冲宽度为16．4ns，峰值功率达到了80kW。     

LD泵浦Nd∶YVO_4/Cr∶YAG被动调Q绿光激光器

报道了一种 LD近贴泵浦、KTP晶体腔内倍频的 Nd∶ YVO4/Cr∶ YAG结构高重复频率被动调 Q绿光激光器。在注入泵浦功率为 75 0 m W时 ,得到平均功率 86m W、脉冲宽度2 6.6ns、重复频率 79.2 k Hz、峰值功率 41 .1 W的被动调 Q脉冲绿光输出     

高重复频率二极管泵浦激光器窄脉宽调Q技术

文中介绍了二极管泵浦激光器谐振腔中的声光调Q技术 ,计算了超声波渡越时间及其对输出光脉冲的影响。在此基础上 ,设计的调Q二极管泵浦激光器在 15W泵浦下 ,获得了脉宽7ns ,峰值功率 34kW ,重复频率 10kHz的脉冲输出     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.