各种体制与用途的雷达及系统

0633010对空情报雷达装备生存能力评估[刊,中]／费太勇／／中国电子科学研究院学报．-2006,1(4)．-336-340(G)针对雷达部署及机动备份对雷达装备生存能力评估的需求,综合运用了参数效能法、专家评估法、量化标尺评价法、阶段概率法、模糊评价法和概率矩阵法等效能评估方法．提出了一种对空情报雷达装备生存能力评估模型．并用实例验证了该模型的科学性和合理性。参10 0633011数字波束形成在雷达中的应用与分析[刊,中]／朱子平／／中国电子科学研究院学报．-2006,1(3)．-244- 247,272(G) 0633012基于DPCA的机载SAR系统运动误差及其补偿[刊,中]／胡磊／／雷达科学与技术．-2006,4(4)．-218-222 (D)     

基于熵权的模糊AHP法在雷达装备采购效能评估中的应用

针对层次分析法（AHP）中决策者的主观判断、偏好及对问题的理解等因素可能对采购效能的评估产生影响，引入基于熵权的模糊层次务析法来评估雷达装备采购效能。给出了雷达装备采购效能评估指标体系的层次结构模型，建立了雷达装备采购效能基于熵权的模糊层次分析法评价模型，并进行了算例分析，验证了该方法简单可行。     

雷达装备采购效能评估

提出了采购效能的定义,给出了雷达装备采购效能评估指标体系的层次结构模型,分析了评价指标,并建立了雷达装备采购效能的模糊综合评价模型。     

潜艇雷达侦察装备效能评估

雷达侦察装备是现代作战中信息对抗的重要组成部分,其效能的高低将直接影响到作战效果。分析了影响雷达侦察装备效能的各种因素,基于WSEIAC模型建立了效能综合评价的指标体系,应用模糊综合评价的方法建立了数学模型,结果表明应用此方法可准确评估雷达侦察装备的效能,并为其方案论证、研发及作战使用提供参考。     

机动状态下雷达装备抗毁性评估研究

本文基于层次分析法建立了机动状态下雷达装备生存能力综合评估模型,研究了运用专家经验评判的权重确定标准和雷达战、技性能指标的评估指数量化模式,对机动状态下的雷达装备的抗毁性进行了定量的综合指数评定方法。最后对某型雷达的系列装备的机动抗毁性进行了评估分析,验证了该方法的正确性。     

机动状态下雷达装备抗毁性评估研究

本文基于层次分析法建立了机动状态下雷达装备生存能力综合评估模型，研究了运用专家经验评判的权重确定标准和雷达战、技性能指标的评估指数量化模式，对机动状态下的雷达装备的抗毁性进行了定量的综合指数评定方法。最后对某型雷达的系列装备的机动抗毁性进行了评估分析，验证了该方法的正确性。     

含逻辑门的雷达组网作战效能评估研究

为了充分考虑雷达组网系统中若干子层重要指标对整体效能的影响,更加贴切地反映装备的真实效能,将"逻辑门"的思想应用到雷达组网作战效能指标的聚合中,构建了基于"逻辑门"的雷达组网作战效能评估指标层次体系;并应用模糊综合评价法,对系统中主要指标进行评估,解决了类似于"一票否决"式指标对雷达组网系统整体效能的影响问题,为合理评价该系统效能提供了一种方法。     

基于扩展AHP的电子战仿真效能评估

基于层次分析法（AHP）技术的电子战效能评估系统能很好的针对装备系统的层次性对装备效能做出科学的评价,以电子战仿真效能评估系统为背景,分析了电子战仿真效能评估模型,建立了电子战效能评估的层次模型,同时对层次分析法予以改进,提出扩展的层次分析法,并运用于模型中,根据此模型可得出电子战装备单项作战效能评估结果﹑电子战装备系统作战效能评估结果,为装备计划﹑论证以及作战运用研究提供了有利的参考。王维锋,赵五洲,孙岩     

雷达情报网生存能力评估方法的研究

提出了一种基于树结构的雷达情报网生存能力评估方法。该方法利用雷达情报网在指挥层次和信息流向呈现树型的特点,在功能单元的工作状态上采用“工作正常、完全失效”二态模式评估模型的基础上,运用雷达效能因子和各功能单元生存概率,给出了雷达情报网生存能力的一个量化描述。该方法具有直观和计算简单的特点。     

基于改进ADC模型的反导预警雷达作战效能评估

反弹道导弹早期预警雷达(EWR)在防空反导作战体系中发挥越来越重要的作用,对其进行作战效能评估具有重要的战略意义。文中试着站在反导战略预警体系的高度,从反导作战使命出发,根据装备作战运用实际,建立了反弹道导弹EWR作战效能评估指标体系;结合理论分析和工作实际,提出一种改进的反弹道导弹预警雷达ADC效能评估模型;最后通过算例数据分析,论证了改进的ADC模型从一定程度上客观评估了雷达的作战效能,为雷达装备作战运用提供了一定依据。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.