CFS-PML边界条件在PSTD算法中的实现与性能分析

文中将具有复频率参数的PML(CFS-PML)边界条件引入到时域伪谱(PSTD)算法中，并利用卷积PML(CPML)方法予以实现，CPML的吸收性能作为时间的函数被给出。与传统PML相比，该边界条件不仅可以吸收传播模，而且还可以吸收低频凋落模。仿真结果也表明，CPML中参数α，Kmax在一定范围内取值可使该边界的反射误差得到最小。     

PML吸收边界条件在波导不连续性问题中的应用

采用矢量有限元方法结合PML吸收边界条件分析波导不连续性问题。利用PML吸收边界条件截断计算区域,可以减少内存消耗;采用模式正交性计算波导结构的S参数,可以获得更加精确的解。在结果验证阶段,分别对PML参数设置、厚度选择、波导介质不连续性以及波导结构不连续性模型进行分析,将计算结果与文献对比,验证了PML吸收边界条件的有限元法分析波导不连续性问题的准确性。     

PML—FDTD法在分析平面光波导结构中的应用

将理想匹配层(PML)吸收边界条件用于平面光波导结构的时域有限差分(FDTD)法分析中，给出了平面光波导结构的PML吸收边界条件，并对平行介质带定向耦合器进行数值模拟和验证，所得结果与理论值非常一致，证明了PML吸收边界条件应用于平面光波导结构分析的有效性。本文方法可用于分析任意复杂结构的平面光波导。     

理想匹配层及模式匹配法分析多段平面光波导结构

将理想匹配层（PML）吸收边界条件和模式匹配法用于多段平面光波导结构分析，给出了一种改进的平面光波导结构的PML吸收边界条件，并对光波导的光场分布进行数值模拟，所得结果表明了PML吸收边界条件应用于多段平面光波导结构分析的有效性。该方法也可用于分析复杂结构的平面光波导。     

基于地震波正演模拟的边界算法研究

地震波正演模拟存在边界反射,构建人工边界吸收条件是消除边界反射的核心部分。针对传统边界吸收条件受入射角度影响,造成边界反射吸收不够彻底,对边界反射提出优化的PML吸收边界条件,能够克服入射角导致的吸收不完全的问题。首先,将模型区域划分为计算域和匹配层两部分;其次通过波动方程做坐标变化且加入衰减函数,经过傅里叶变化得到PML边界的声波方程;最后,当由计算域过渡至匹配层时,匹配层采用优化后衰减因子,从而达到消除边界反射的目的。通过对边界吸收算法研究表明,优化后PML(perfectlymatched layer,PML)吸收边界条件能够对边界反射获得更好的正演模拟结果,对不同入射角能做到完全吸收的效果。     

波导模场分布采用模式匹配的PML处理方法

理想匹配层(PML)是近年来迅速发展起来的一种非常有效的吸收边界.本文基于模式匹配法将PML吸收边界条件用于平面光波导结构计算中,从理论上分析了PML吸收边界条件的有效性,并在PML边界条件下模拟计算了一个三段平面光波导结构的模场分布.     

用时域变换的方法计算微带线的有效介电常数

使用了各向异性的PML吸收边界条件来截断时域有限差分网格,对具有匹配负载的微带线中的电磁波的传播进行了模拟,并通过时域变换来计算微带线的有效介电常数,首次把各向异性的PML吸收边界 数值模拟终端负载以及时域变换等技术结合起来,引入到有关微带线的计算中来,以替代分别用完全电壁和守全磁壁进行两次计算的边界条件,从计算结果看,该结果同分别使用完全电壁和完全磁壁进行两次计算的边界条件所得的结果符合得很好,并且在计算上更简洁。可以看出各向异性的PML吸收边界条件对用时域近似这类方法来解决微带线问题非常适用。     

采用PML吸收边界条件的FDTD法的分析平面微带结构中的应用

本文将理想匹配层（PML）吸收边界条件用于平面微带结构的时域有限差分法（FDTD）分析中,给出平面微带结构的PML吸收边界条件,并编制程序,进行数值计算。结果表明,与传统的Mur吸收边界条件相比,采用PML吸收边界条件只需采用最简单的馈源模型就可明显地减小计算网格空间和加快收敛速度,并且可用于分析任意复杂结构的微带电路。本文方法对微带电路及微带天线的CAD设计将具有实际意义。     

采用PML吸收边界条件的FDTD法在分析平面微带结构中的应用

本文将理想匹配层(PML)吸收边界条件用于平面微带结构的时域有限差分法(FDTD)分析中,给出平面微带结构的PML吸收边界条件,并编制程序,进行数值计算。结果表明,与传统的Mur吸收边界条件相比,采用PML吸收边界条件只需采用最简单的馈源模型就可明显地减小计算网格空间和加快收敛速度,并且可用于分析任意复杂结构的微带电路。本文方法对微带电路及微带天线的CAD设计将具有实际意义。     

理想匹配层及模式匹配法分新多段平面光波导结构

将理想匹配层(PML)吸收边界条件和模式匹配法用于多段平面光波导结构分析,给出了一种改进的平面光波导结构的PML吸收边界条件,并对光波导的光场分布进行数值模拟,所得结果表明了PML吸收边界条件应用于多段平面光波导结构分析的有效性.该方法也可用于分析复杂结构的平面光波导.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-