Highly Efficient Organic THz Generator Pumped at Near‐Infrared: Quinolinium Single Crystals

A novel highly efficient ionic electro‐optic quinolinium single crystals for THz wave applications is reported. Acentric quinolinium derivatives, HMQ‐T (2‐(4‐hydroxy‐3‐methoxystyryl)‐1‐methylquinolinium 4‐methylbenzenesulfonate) and HMQ‐MBS (2‐(4‐hydroxy‐3‐methoxystyryl)‐1‐methylquinolinium 4‐methoxybenzenesulfonate) exhibit high order parameters cos³θ_p = 0.92 and cos³θ_p = 1.0, respectively, as well as a large macroscopic optical nonlinearity, which is in the range of the benchmark stilbazolium DAST (N,N‐dimethylamino‐N’‐methylstilbazolium 4‐methylbenzenesulfonate) and phenolic polyene OH1 (2‐(3‐(4‐hydroxystyryl)‐5,5‐dimethylcyclohex‐2‐enylidene)malononitrile) crystals. As‐grown unpolished bulk HMQ‐T crystals with a side length of about 6 mm and thickness of 0.56 mm exhibit 3.1 times higher THz generation efficiency than 0.37 mm thick OH1 crystals and about 8.4 times higher than 1 mm thick inorganic standard ZnTe crystals at the near‐infrared fundamental wavelength of 836 nm. Therefore, HMQ crystals with high order parameter obviously have a very high potential for high power THz‐wave generation and its applications.     

Synthesis and Crystal Growth of Stilbazolium Derivatives for Second‐Order Nonlinear Optics

A series of ionic stilbazolium salts with benzenesulfonates with different substituents in the para position have been synthesized. Single crystals of 4‐N,N‐dimethylamino‐4′‐N′‐methylstilbazolium p‐methoxybenzenesulfonate (DSMOS) were successfully grown in methanol solution by slow cooling. X‐ray studies revealed that DSMOS crystallized in the triclinic space group P1 with its molecular dipoles perfectly aligned in one direction—favorable for large nonlinear optical and electro‐optical effects. Kurtz powder tests revealed a large powder second‐harmonic generation efficiency that is similar to that of the well‐studied 4‐N,N‐dimethylamino‐4′‐N′‐methylstilbazolium tosylate (DAST).     

Cyano‐Substituted Oligo(p‐phenylene vinylene) Single Crystals: A Promising Laser Material

Organic crystals that combine high charge‐carrier mobility and excellent light‐emission characteristics are expected to be of interest for light‐emitting transistors and diodes, and may offer renewed hope for electrically pumped laser action. High‐luminescence‐efficiency cyano‐substituted oligo(p‐ phenylene vinylene) (CN‐DPDSB) crystals (η ≈ 95%) grown by the physical vapor transport method is reported here, with high mobilities (at ≈10^?2 cm² V^?1 s^?1 order of magnitude) as measured by time‐of‐flight. The CN‐DPDSB crystals have well‐balanced bipolar carrier‐transport characteristics (μ_hole≈ 2.5–5.5 × 10^?2 cm² V^?1 s^?1; μ_electron ≈ 0.9–1.3 × 10^?2 cm² V^?1 s^?1) and excellent optically pumped laser properties. The threshold for amplified spontaneous emission (ASE) is about 4.6 μJ per pulse (23 KW cm^?2), while the gain coefficient at the peak wavelength of ASE and the loss coefficient caused by scattering are ≈35 and ≈1.7 cm^?1, respectively. This indicates that CN‐DPDSB crystals are promising candidates for organic laser diodes.     

Layer‐Structured Photoconducting Polymers: A New Class of Photorefractive Materials

We study the photorefractive (PR) properties of a new kind of low glass‐transition temperature (T_g) polymer composite based on layered photoconductive polymers, poly(p‐phenylene terephthalate) carbazoles (PPT‐CZs). These photoconductors consist of the rigid backbone of PPT with pendant oxyalkyl CZ groups. The compounds are doped with the photosensitizer C₆₀ and nonlinear optical chromophores diethylaminodicyanostyrene (DDCST), and no plasticizers are added. When the host polymers are mixed with various PR ingredients, the layers are preserved and their layer distance increases, indicating that all the guest molecules are confined to the nanoscale interlayer space. These composites showed very low T_g values (< ? °C). Despite the absence of a plasticizer and the lower concentration of the carbazole photoconductive moieties as compared to poly(N‐vinylcarbazole) systems, these materials show excellent PR properties, i.e., a PR gain of Γ = 250 cm^–1 under an external electric field of 60 V μm^–1, and diffraction efficiency and PR sensitivity of 93 % and 24 ± 7 cm² kJ^–1 at E = 100 V μm^–1, respectively.     

Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple‐junction solar cells

This paper studies the recombination at the perimeter in the subcells that constitute a GaInP/GaAs/Ge lattice‐matched triple‐junction solar cell. For that, diodes of different sizes and consequently different perimeter/area ratios have been manufactured in single‐junction solar cells resembling the subcells in a triple‐junction solar cell. It has been found that neither in GaInP nor in Ge solar cells the recombination at the perimeter is significant in devices as small as 500 μm × 500μm(2.5 ⋅ 10 ^{− 3} cm²) in GaInP and 250μm × 250μm (6.25 ⋅ 10 ^{− 4}cm²) in Ge. However, in GaAs, the recombination at the perimeter is not negligible at low voltages even in devices as large as 1cm², and it is the main limiting recombination factor in the open circuit voltage even at high concentrations in solar cells of 250 μm × 250μm (6.25 ⋅ 10 ^{− 4} cm²) or smaller. Therefore, the recombination at the perimeter in GaAs should be taken into account when optimizing triple‐junction solar cells. Copyright © 2014 John Wiley & Sons, Ltd.     

New Family of Ruthenium‐Dye‐ Sensitized Nanocrystalline TiO2 Solar Cells with a High Solar‐Energy‐Conversion Efficiency

A new type of ruthenium complexes 6 – 8 with tridentate bipyridine–pyrazolate ancillary ligands has been synthesized in an attempt to elongate the π‐conjugated system as well as to increase the optical extinction coefficient, possible dye uptake on TiO₂, and photostability. Structural characterization, photophysical studies, and corresponding theoretical approaches have been made to ensure their fundamental basis. As for dye‐sensitized solar cell applications, it was found that 6 – 8 possess a larger dye uptake of 2.4 × 10^–7 mol cm^–2, 1.5 × 10^–7 mol cm^–2, and 1.3 × 10^–7 mol cm^–2, respectively, on TiO₂ than that of the commercial N3 dye (1.1 × 10^–7 mol cm^–2). Compound 8 works as a highly efficient photosensitizer for the dye‐sensitized nanocrystalline TiO₂ solar cell, producing a 5.65 % solar‐light‐to‐electricity conversion efficiency (compare with 6.01 % for N3 in this study), a short‐circuit current density of 15.6 mA cm^–2, an open‐circuit photovoltage of 0.64 V, and a fill factor of 0.57 under standard AM 1.5 irradiation (100 mW cm^–2). These, in combination with its superior thermal and light‐soaking stability, lead to the conclusion that the concomitant tridentate binding properties offered by the bipyridine‐pyrazolate ligand render a more stable complexation, such that extended life spans of DSSCs may be expected.     

Polymer Light‐Emitting Electrochemical Cells: Doping Concentration,Emission‐Zone Position,and Turn‐On Time

Direct optical probing of the doping progression and simultaneous recording of the current–time behavior allows the establishment of the position of the light‐emitting p–n junction, the doping concentrations in the p‐ and n‐type regions, and the turn‐on time for a number of planar light‐emitting electrochemical cells (LECs) with a 1 mm interelectrode gap. The position of the p–n junction in such LECs with Au electrodes contacting an active material mixture of poly(2‐methoxy‐5‐(2′‐ethylhexyloxy)‐p‐phenylene vinylene) (MEH‐PPV), poly(ethylene oxide), and a XCF₃SO₃ salt (X = Li, K, Rb) is dependent on the salt selection: for X = Li the p–n junction is positioned very close to the negative electrode, while for X = K, Rb it is significantly more centered in the interelectrode gap. Its is demonstrated that this results from that the p‐type doping concentration is independent of salt selection at ca. 2 × 10²⁰ cm^–3 (ca. 0.1 dopants/MEH‐PPV repeat unit), while the n‐type doping concentration exhibits a strong dependence: for X = K it is ca. 5 × 10²⁰ cm^–3 (ca. 0.2 dopants/repeat unit), for X = Rb it is ca. 9 × 10²⁰ cm^–3 (ca. 0.4 dopants/repeat unit), and for X = Li it is ca. 3 × 10²¹ cm^–3 (ca. 1 dopants/repeat unit). Finally, it is shown that X = K, Rb devices exhibit significantly faster turn‐on times than X = Li devices, which is a consequence of a higher ionic conductivity in the former devices.     

Extremely Low‐Threshold Amplified Spontaneous Emission of 9,9′‐Spirobifluorene Derivatives and Electroluminescence from Field‐Effect Transistor Structure

By doping 2,7‐bis[4‐(N‐carbazole)phenylvinyl]‐9,9′‐spirobifluorene (spiro‐SBCz) into a wide energy gap 4,4′‐bis(9‐carbazole)‐2,2′‐biphenyl (CBP) host, we demonstrate an extremely low ASE threshold of E_th = (0.11 ± 0.05) μJ cm^–2 (220 W cm^–2) which is the lowest ASE threshold ever reported. In addition, we confirmed that the spiro‐SBCz thin film functions as an active light emitting layer in organic light‐emitting diode (OLED) and a field‐effect transistor (FET). In particular, we succeeded to obtain linear electroluminescence in the FET structure which will be useful for future organic laser diodes.     

Diphenylamine‐Substituted Cruciform Oligo(phenylene vinylene): Enhanced One‐ and Two‐Photon Excited Fluorescence in the Solid State

1,4‐di(4′‐N,N‐diphenylaminostyryl)benzene (DPA‐DSB) is a well known compound with a large two‐photon absorption (TPA) section and strong fluorescence in solution. However, the ease with which it crystallizes results in the formation of discontinuous crystalline phases during vacuum deposition processes, thereby greatly limiting its applicability in solid‐state devices. A cruciform dimer of DPA‐DSB, 2,5,2′,5′‐tetra(4′‐N,N‐diphenylaminostyryl)biphenyl (DPA‐TSB) is reported, wherein two DPA‐DSB molecules are linked through a central biphenyl bond. The DPA‐TSB molecules take on a cruciform configuration because of the steric crowding around the central biphenyl core, which has the effect of efficiently suppressing crystalline and intermolecular interactions. The neat DPA‐TSB solid shows strong green–blue fluorescence because of both steady‐state absorption as well as TPA. The DPA‐TSB solid exhibits a photoluminescence (PL) efficiency (η_solid) of 29 % and a solid‐state two‐photon action cross section (δη_solid) of 954 GM (1 GM = 1 × 10^–50 cm⁴ s photon^–1 molecule^–1), which is much greater than for the model compound DPA‐DSB (η_solid = 16 % and δη_solid = 150 GM, where δ is the TPA cross section and η is the fluorescence quantum yield). Based on its high PL efficiency, good film‐forming ability, and strong TPA, DPA‐TSB seems to be a good candidate for applications in solid‐state optical devices.     

Low‐Threshold Distributed‐Feedback Lasers Based on Pyrene‐Cored Starburst Molecules with 1,3,6,8‐Attached Oligo(9,9‐Dialkylfluorene) Arms

Here, a detailed characterization of the optical gain properties of sky‐blue‐light‐emitting pyrene‐cored 9,9‐dialkylfluorene starbursts is reported; it is shown that these materials possess encouragingly low laser thresholds and relatively high thermal and environmental stability. The materials exhibit high solid‐state photoluminescence (PL) quantum efficiencies (>90%) and near‐single‐exponential PL decay transients with excited state lifetimes of ～1.4 ns. The thin‐film slab waveguide amplified spontaneous emission (ASE)‐measured net gain reaches 75–78 cm^?1. The ASE threshold energy is found to remain unaffected by heating at temperatures up to 130 °C, 40 to 50 °C above T_g. The ASE remained observable for annealing temperatures up to 170 or 200 °C. 1D distributed feedback lasers with 75% fill factor and 320 nm period show optical pumping thresholds down to 38–65 Wcm^?2, laser slope efficiencies up to 3.9%, and wavelength tuning ranges of ～40 nm around 471–512 nm. In addition, these lasers have relatively long operational lifetimes, with N_1/2 ≥ 1.1 × 10⁵ pulses for unencapsulated devices operated at ten times threshold in air.     

Organic Phenolic Configurationally Locked Polyene Single Crystals for Electro‐optic and Terahertz Wave Applications

We investigate a configurationally locked polyene (CLP) crystal 2‐(3‐(4‐hydroxystyryl)‐5,5‐dimethylcyclohex‐2‐enylidene)malononitrile (OH1) containing a phenolic electron donor, which also acts as a hydrogen bond donor. The OH1 crystals with orthorhombic space group Pna2₁ (point group mm2) exhibit large second‐order nonlinear optical figures of merit, high thermal stability and very favorable crystal growth characteristics. Higher solubility in methanol and a larger temperature difference between the melting temperature and the decomposition temperature of OH1 compared to analogous CLP crystals, are of advantage for solution and melt crystal growth, respectively. Acentric bulk OH1 crystals of large sizes with side lengths of up to 1 cm with excellent optical quality have been successfully grown from methanol solution. The microscopic and macroscopic nonlinearities of the OH1 crystals are investigated theoretically and experimentally. The OH1 crystals exhibit a large macroscopic nonlinearity with four times larger powder second harmonic generation efficiency than that of analogous CLP crystals containing dimethylamino electron donor. A very high potential of OH1 crystals for broadband THz wave emitters in the full frequency range of 0.1–3 THz by optical rectification of 160 fs pulses has been demonstrated.     

Highly Sensitive,Photocontrolled, Organic Thin‐Film Transistors Using Soluble Star‐shaped Conjugated Molecules

The highly photosensitive characteristics of organic thin‐film transistors (OTFTs) made using soluble star‐shaped oligothiophenes with four‐armed π‐conjugation paths, 4(HPBT)‐benzene and 4(HP3T)‐benzene molecules having a relatively high quantum yield, are reported. 4(HPBT)‐benzene‐based organic phototransistors (OPTs) exhibited high photosensitivity (～2500–4300 A W^?1) even with low optical powers (～6.8–30 µW cm^?2) at zero gate bias. The measured photosensitivity of the devices was much higher than that of inorganic single‐crystal Si‐based phototransistors, as well as that of other OPTs reported earlier. With the highly photosensitive characteristics of the 4(HPBT)‐benzene‐based OPTs, a high ratio of the on and off current switching of ～4 × 10⁴ with low optical power and low gate bias was observed. The slow relaxation of the photoinduced charges and charge‐trapping phenomena at the interface could lead to a reproducible memory operation for 4(HPBT)‐benzene‐based OPTs.     

Soft‐Lithographed Up‐Converted Distributed Feedback Visible Lasers Based on CdSe–CdZnS–ZnS Quantum Dots

The development of a solution‐deposited up‐converted distributed feedback laser prototype is presented. It employs a sol–gel silica/germania soft‐lithographed microcavity and CdSe–CdZnS–ZnS quantum dot/sol–gel zirconia composites as optical gain material. Characterization of the linear and nonlinear optical properties of quantum dots establishes their high absorption cross‐sections in the one‐ and two‐ photon absorption regimes to be 1 × 10^?14 cm² and 5 × 10⁴ GM, respectively. In addition, ultrafast transient absorption dynamics measurements of the graded seal quantum dots reveal that the Auger recombination lifetime is 220 ps, a value two times higher than that of the corresponding CdSe core. These factors enable the use of such quantum dots as optically pumped gain media, operating in the one‐ and two‐photon absorption regime. The incorporation of CdSe–CdZnS–ZnS quantum dots within a zirconia host matrix affords a quantum‐dot ink that can be directly deposited on our soft‐lithographed distributed feedback grating to form an all‐solution‐processed microcavity laser.     

Synthesis of Optical‐Quality Single‐Crystal β‐BaB2O4 Microwires and Nanowires

The synthesis of optical quality β‐barium borate microwires and nanowires (MNWs) is reported using an organic‐free hydrothermal method with BaCl₂·6H₂O, NaOH, and H₃BO₃ as source materials, and assisted with post‐annealing. As‐synthesized MNWs, with diameters ranging from 500 nm to 2 μm and lengths up to several hundred micrometers, show good optical‐waveguiding capabilities. Based on evanescent coupling between a single BBO MNW waveguide and a fiber taper, propagation losses of 0.30 dB μm^?1 (at 532 nm) and 0.21 dB μm^?1 (at 671 nm) are evaluated, respectively. An evident second‐harmonic generation (SHG) signal at 532 nm with a measured conversion efficiency of about 8.4% is observed when excited by waveguided 1064 nm, picosecond laser pulses within a BBO MNW with a length of the order of 100 μm. The dependence of the SHG conversion efficiency on the MNW diameter is also investigated. These results show a much‐higher SHG efficiency for BBO single‐crystal MNWs compared with bulk crystal, which suggests potential applications in future micro‐/nanoscale nonlinear optical applications such as optical modulation and frequency conversion.     

Alkoxy‐Functionalized Thienyl‐Vinylene Polymers for Field‐Effect Transistors and All‐Polymer Solar Cells

π‐conjugated polymers based on the electron‐neutral alkoxy‐functionalized thienyl‐vinylene (TVTOEt) building‐block co‐polymerized, with either BDT (benzodithiophene) or T2 (dithiophene) donor blocks, or NDI (naphthalenediimide) as an acceptor block, are synthesized and characterized. The effect of BDT and NDI substituents (alkyl vs alkoxy or linear vs branched) on the polymer performance in organic thin film transistors (OTFTs) and all‐polymer organic photovoltaic (OPV) cells is reported. Co‐monomer selection and backbone functionalization substantially modifies the polymer MO energies, thin film morphology, and charge transport properties, as indicated by electrochemistry, optical spectroscopy, X‐ray diffraction, AFM, DFT calculations, and TFT response. When polymer P7 is used as an OPV acceptor with PTB7 as a donor, the corresponding blend yields TFTs with ambipolar mobilities of μ_e = 5.1 × 10^?3 cm² V^–1 s^–1 and μ_h = 3.9 × 10^?3 cm² V^–1 s^–1 in ambient, among the highest mobilities reported to date for all‐polymer bulk heterojunction TFTs, and all‐polymer solar cells with a power conversion efficiency (PCE) of 1.70%, the highest reported PCE to date for an NDI‐polymer acceptor system. The stable transport characteristics in ambient and promising solar cell performance make NDI‐type materials promising acceptors for all‐polymer solar cell applications.     

Inside Front Cover: High‐Performance and Stable Organic Thin‐Film Transistors Based on Fused Thiophenes (Adv. Funct. Mater. 3/2006)

A series of new organic semiconductors for organic thin‐film transistors using dithieno[3,2‐b:2′,3′‐d]thiophene as the core have been synthesized. In work reported by Liu, Zhu, and co‐workers on p. 426, the phenyl‐substituted compound exhibited a high mobility of 0.42 cm² V^–1 s^–1 and an on/off ratio of 5 × 10⁶. Weekly shelf‐life tests of the transistors based on the bis(diphenyl)‐substituted thiophene under ambient conditions showed that the mobility was almost unchanged after more than two months, demonstrating potential for applications in future organic electronics. A series of new organic semiconductors for organic thin‐film transistors (OTFTs) using dithieno[3,2‐b:2′,3′‐d]thiophene as the core are synthesized. Their electronic and optical properties are investigated using scanning electron microscopy (SEM), X‐ray diffraction (XRD), UV‐vis and photoluminescence spectroscopies, thermal gravimetric analysis (TGA), and differential scanning calorimetry (DSC). The compounds exhibit an excellent field‐effect performance with a high mobility of 0.42 cm² V^–1 s^–1 and an on/off ratio of 5 × 10⁶. XRD patterns reveal these films, grown by vacuum deposition, to be highly crystalline, and SEM reveals well‐interconnected, microcrystalline domains in these films at room temperature. TGA and DSC demonstrate that the phenyl‐substituted compounds possess excellent thermal stability. Furthermore, weekly shelf‐life tests (under ambient conditions) of the OTFTs based on the phenyl‐substituted compounds show that the mobility for the bis(diphenyl)‐substituted thiophene was almost unchanged for more than two months, indicating a high environmental stability.     

High‐Performance [001]c‐Textured PNN‐PZT Relaxor Ferroelectric Ceramics for Electromechanical Coupling Devices

[001]_C‐Textured 0.55Pb(Ni_1/3Nb_2/3)O₃–0.15PbZrO₃–0.3PbTiO₃ (PNN‐PZT) ceramics are prepared by the templated grain‐growth method using BaTiO₃ (BT) platelet templates. Samples with different template contents are fabricated and compared in terms of texture fraction, microstructure, and piezoelectric, ferroelectric and dielectric properties. High piezoelectric performance (d₃₃ = 1210 pC N^?1, d₃₃* = 1773 pm V^?1 at 5 kV cm^?1) and high figure of merit g₃₃?d₃₃ (21.92 × 10^?12 m² N^?1) are achieved in the [001]_C‐textured PNN‐PZT ceramic with 2 vol% BaTiO₃ template, for which the texture fraction is 82%. In addition, domain structures of textured PNN‐PZT ceramics are observed and analyzed, which provide clues to the origin of the giant piezoelectric and electromechanical coupling properties of PNN‐PZT ceramics.     

High‐Performance and Stable Organic Thin‐Film Transistors Based on Fused Thiophenes

A series of new organic semiconductors for organic thin‐film transistors (OTFTs) using dithieno[3,2‐b:2′,3′‐d]thiophene as the core are synthesized. Their electronic and optical properties are investigated using scanning electron microscopy (SEM), X‐ray diffraction (XRD), UV‐vis and photoluminescence spectroscopies, thermal gravimetric analysis (TGA), and differential scanning calorimetry (DSC). The compounds exhibit an excellent field‐effect performance with a high mobility of 0.42 cm² V^–1 s^–1 and an on/off ratio of 5 × 10⁶. XRD patterns reveal these films, grown by vacuum deposition, to be highly crystalline, and SEM reveals well‐interconnected, microcrystalline domains in these films at room temperature. TGA and DSC demonstrate that the phenyl‐substituted compounds possess excellent thermal stability. Furthermore, weekly shelf‐life tests (under ambient conditions) of the OTFTs based on the phenyl‐substituted compounds show that the mobility for the bis(diphenyl)‐substituted thiophene was almost unchanged for more than two months, indicating a high environmental stability.     

Integrating Efficient Optical Gain in High‐Mobility Organic Semiconductors for Multifunctional Optoelectronic Applications

Simultaneously integrating efficient optical gain and high charge carrier mobility in organic semiconductors for multifunctional optoelectronic applications is challenging. Here, a new thiophene/phenylene derivative, 5,5′‐bis(2,2‐diphenylvinyl)‐bithiophene (BDPV2T), containing an appropriate butterfly molecular configuration in a π‐conjugated structure, is designed to achieve both solid‐state emission and charge transport properties. The prepared BDPV2T crystals exhibit excellent light‐emitting characteristics with a photoluminescence quantum yield of 30%, low light‐amplification threshold of 8 kW cm^?2, high optical net gain up to 70 cm^?1, and high charge carrier mobility up to 1 cm² V^?1 s^?1 in their J‐aggregate single crystals. These BDPV2T single crystal characteristics ensure their application potential for photodetectors, field‐effect transistors, and light‐emitting transistors. High optoelectronic performances are achieved with photoresponsivity of 2.0 × 10³ A W^?1 and light on/off ratio of 5.4 × 10⁵ in photodetectors, and efficient ambipolar charge transport (µ_h: 0.14 cm² V^?1 s^?1, µ_e: 0.02 cm² V^?1 s^?1) and electroluminescence characteristics in light‐emitting transistors. The remarkably integrated optoelectronic properties of BDPV2T suggest it is a promising candidate for organic multifunctional and electrically pumped laser applications.     

Characterization and Field‐Emission Properties of Needle‐like Zinc Oxide Nanowires Grown Vertically on Conductive Zinc Oxide Films

Needle‐like ZnO nanowires with high density are grown uniformly and vertically over an entire Ga‐doped conductive ZnO film at 550 °C. The nanowires are grown preferentially in the c‐axis direction. The X‐ray diffraction (XRD) θ‐scan curve shows a full width at half maximum (FWHM) value of 2°. This indicates that the c‐axes of the nanorods are along the normal direction of the substrate surface. The investigation using high‐resolution transmission electron microscopy (HRTEM) confirmed that each nanowire is a single crystal. A room‐temperature photoluminescence (PL) spectrum of the wires consists of a strong and sharp UV emission band at 380 nm and a weak and broad green–yellow band. It reveals a low concentration of oxygen vacancies in the ZnO nanowires and their high optical quality. Field electron emission from the wires was also investigated. The turn‐on field for the ZnO nanowires was found to be about 18 V μm^–1 at a current density of 0.01 μA cm^–2. The emission current density from the ZnO nanowires reached 0.1 mA cm^–2 at a bias field of 24 V μm^–1.