基于ARM的LCD图像显示系统设计

本文介绍了TFT-LCD的特点。进一步以ARM S3C2410作为处理器控制芯片,根据LCD图形显示设计流程,提出了S3C2410控制寄存器的设置方法。然后阐述了帧缓冲设备的层次结构和数据结构。最后在Linux操作系统下,实现了基于ARM的BMP及JPEG图像显示。     

嵌入式Linux下的LCD驱动程序设计与实现

从设备驱动程序的作用、分类及文件操作,对设备驱动开发的相关知识作了简单介绍。通过对LCD和Framebuffer原理的说明,以ARM处理器S3C2410嵌入式芯片为平台,设计了嵌入式Linux下的基于帧缓冲的LCD设备驱动程序。通过测试程序的编译运行,在LCD上显示了彩色条纹,完成了驱动设计的要求。     

基于嵌入式ARM的LCD图像显示系统设计

介绍了以ARM9处理器芯片S3C2410为基础搭建的LCD(液晶显示器)硬件电路,以及在此基础上移植嵌入式Linux之后,基于帧缓冲(Framebuffer)的LCD驱动程序的实现方法。讨论了Framebuffer的处理机制及底层驱动的接口函数,并针对具体的LCD面板,介绍了如何在μCLinux中编写帧缓冲设备的驱动程序。系统功能丰富,为各种扩展提供了基本的软硬件基础。     

Linux系统下基于S3C2410X的液晶显示驱动程序的研究

主要介绍Linux下基于S3C2410X的液晶驱动程序的研究与开发。首先详细介绍LCD控制器工作原理以及S3C2410X的LCD控制器及其管脚,同时给出LCD控制寄存器的设置规则。并根据系统中的液晶参数给出具体的硬件连接图,得到LCD控制寄存器的参数。然后介绍帧缓冲的工作原理,并说明了帧缓冲2个方面的实现,提出了一种适用于S3C2410X硬件的通用的液晶显示驱动程序的编写方法。开发了相应的驱动程序,得到很好的显示效果,可以稳定运行。     

基于ARM的图形用户界面软件开发平台的搭建

设计了基于三星S3C2410微控制器的TFT-LCD驱动控制系统,并将其与Micrium公司的μC/GUI图形用户界面整合在一起,形成了一个方便小巧的嵌入式系统应用软件开发平台.详细分析了如何利用ARM9的LCD控制器进行LCD的驱动,并介绍了将该驱动程序移植到图形用户界面μC/GUI的过程.     

ARM嵌入式系统的LCD驱动设计

ARM的RISC处理器广泛应用于各种数字系统中.文章以三星公司生产的S3C2410芯片为例,在阐述LCD屏显示原理的基础上,详细阐述了LCD驱动程序的设计,并给出了初始化程序,实现了液晶显示屏的驱动.     

基于S3C2410的触摸屏应用技术

S3C2410处理器是Samsung公司基于ARM公司的ARM920T处理器核,是当前32位嵌入式市场中应用较多的微控制器,基于S3C2410嵌入式微处理器的触摸屏应用技术有较高的工程应用价值。介绍了S3C2410处理器的技术特点、触摸屏的工作原理,阐述了基于S3C2410系统的触摸屏接口设计方法和程序配置。     

基于S3C2410的TFT-LCD驱动电路设计

本文以三星电子公司的嵌入式处理器S3C2410和3.5英寸真彩液晶显示器LTS350Q1-PE1为基础,实现了一个基于嵌入式平台的液晶显示系统,设计了TFT-LCD的硬件驱动电路,给出了S3C2410LCD控制器的内部结构和寄存器设置方法。     

嵌入式系统中LCD驱动的实现原理

结合三星公司ARM9系列嵌入式处理器S3C2410．讲解如何进行LCD驱动程序模块化编程及如何将驱动程序静态加载进系统内核。     

ARM芯片S3C2410驱动TFT-LCD的研究

介绍了S3C2410的LCD控制器的数据和控制管脚，并给出了LCD的控制流程和TFT-LCD的控制器设置规则。参照TFT-LCD CJMIOC0101的逻辑要求和时序要求设计了其驱动电路，设置了各主要LCD寄存器。开发了CJM10C0101在嵌入式LINUX下的显示驱动程序，并在CJM10C0101上显示了清晰稳定的画面。实验表明这套装置通用性好，能驱动大部分的TFT-LCD；可移植性强，经过少许修改即可应用在其他嵌入式系统中。它是S3C2410驱动TFT-LCD的一套较佳的解决方案。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its