SM3及SHA-2系列算法硬件可重构设计与实现

针对当前国内外杂凑算法标准和应用需求不同的现状,采用数据流可重构的设计思想和方法,在对SM3及SHA-2系列杂凑算法的不同特征进行分析研究的基础上,总结归纳出统一的处理模型,进而设计了一种新的硬件结构。基于该结构,根据不同环境对杂凑算法安全强度的不同要求,可以单独灵活地实现SM3,SHA-256,SHA-384及SHA-512算法。实验结果表明,设计的硬件电路有效降低了硬件资源消耗,提高了系统吞吐率,能够满足国内外商用杂凑算法的要求。     

一种能够实现多种散列函数的VLSI-IP模块设计

给出了一种能够实现多种散列函数的VLSI-IP模块设计,应用到一种网络安全处理器的认证模块设计中.在实现SHA-1和CHI安全散列函数运算的基础上,进而利用迭代技术实现散列消息鉴别码HMAC-SHA-1和HMAC-CHI-160,并生成SSL(Security Socket Layer)协议中所需的主密钥和密钥块.采用SMIC 0.13μm CMOS工艺,综合后关键路径为4.56ns,面积为0.61mm2,运算SHA-1的吞吐率达到1.82Gb/ s.     

高频率、低成本的SHA-256算法VLSI实现

SHA-256安全散列算法广泛应用于数据完整性校验及数字签名等领域.为满足安全SoC系统对SHA-256高工作频率和低硬件成本的设计需求,提出了一种新颖的SHA-256 VLSI实现方法,通过分解算法实现步骤,进而缩短关键路径,节省硬件资源.采用SMIC 0.13μm CMOS工艺综合实现,结果表明其最高工作频率达334.5MHz,资源消耗减少了70%.     

SIFT描述子高效扫描控制电路结构设计

尺度不变特征变化(SIFT)算法是目前在图像配准领域最为活跃的算法之一,但描述子特征向量描述部分的计算复杂度特别高,现有硬件实现方法的数据吞吐率仅为50%.为了克服该瓶颈,提出了一种新型的描述子特征向量扫描控制机制,占用硬件资源少,显著提高有效像素点的采样率.在硬件耗用仅提高1.16%的情况下,平均吞吐率达到77%,与传统方法相比吞吐率提高了54%.     

基于轮内流水线技术的高性能AES硬件实现设计

为了提升AES的性能,本文采用轮内流水线技术进行AES硬件设计。在对AES轮单元复杂的字节代换/逆字节代换、列变换/逆列变换进行了算法分析的基础上,进行了AES轮单元的轮内7级流水线设计。特别是采用常数矩阵乘积形式和复用列变换进行了逆列变换设计,降低了硬件资源的占用。采用Xilinx ISE10.1工具进行了各个型号FPGA的硬件实现,实验数据表明文中提出的硬件实现方案提升了AES的数据吞吐率与吞吐率/面积比。     

可并行识别的分组动态帧时隙ALOHA标签防碰撞算法

该文针对现有动态帧时隙ALOHA标签防碰撞算法的系统吞吐率低、算法效率低等问题,提出一种可并行识别的分组动态帧时隙ALOHA(PIGDFSA)标签防碰撞算法。该文以实验为基础,探索了待识别标签数、标签分组数、帧长对系统吞吐率与标签碰撞率的影响,研究了提升系统吞吐率与降低标签碰撞率的策略与方法。结合射频识别(RFID)的多天线系统,引入FastICA技术,从而实现碰撞时隙重新定义,并以此为基础,利用未识别标签数目自适应确定分组数与帧长。仿真结果表明:PIGDFSA算法在标签数达到2000时,算法吞吐率仍能稳定在92%以上,与FSA-256, GDFSA, BSDBG等算法相比具有更高的算法吞吐率,更少的空隙时隙,更高的算法效率。     

安全散列算法的FPGA实现与仿真

安全散列算法是一种常用的加密算法,在信息安全领域得到了广泛应用。该文通过设计硬件电路,建立SHA-1算法的模型并实现。在FPGA中实现SHA-1算法时采取并行处理的方法,对算法的实现流程进行了优化,通过模块化设计,缩短了算法实现的周期,减少了存储资源的占用。最后进行综合和仿真,验证了算法实现的正确性。     

一种基于阵列配置加速比模型的无损压缩算法

针对现有压缩算法通过增加复杂度来降低压缩率,获得信息高效传输的问题。该文提出阵列配置加速比模型,证明低压缩率不一定能提高传输效率,并找到影响信息传输效率的因子,即解压模块吞吐率和数据块压缩率。将影响因子与配置信息特征结合,设计了一种新的无损压缩算法,并硬件实现了解压模块,吞吐率可达到16.1 Gbps。采用AES, A5-1和SM4对无损压缩算法进行测试,然后与主流无损压缩算法LZW, Huffman, LPAQ1和Arithmetic对比。结果表明,整体压缩率相当,但该文压缩算法产生的数据块压缩率经过优化,不仅能满足加速需求,且具有高吞吐率的解压性能;该文无损压缩算法获得的配置加速比,比硬件吞吐率理想情况下的LPAQl, Arithmetic, Huffman, LZW算法分别高8%, 9%, 10%, 22%左右。     

一种高吞吐率国密SM3硬件IP核的设计与实现

为满足网络安全认证的需求,提出了一种高吞吐率的国密SM3的硬件IP核的设计方法。该方法用3级流水线缩短了每轮运算的关键路径,提升了系统时钟,并将64轮运算全部展开,实现轮间64级流水线,总共192级的全流水线设计,能够同时实现192组消息的SM3运算。基于SMIC 0.18um的工艺,实现了该IP核,时钟频率达到了200MHz, 吞吐率达到了102.4Gbps,比现有的研究成果提升39.3%。     

高吞吐率XTS-AES加密算法的硬件实现

基于XTS-AES算法提出了一种具有并行全流水结构的硬件实现方法.设计通过展开数据通路的方式,提高了吞吐率;同时还通过采用内部流水线结构优化关键路径的方式,提高了电路的时钟频率和整体工作性能.在UMC 90 nm CMOS工艺条件下,所设计的XTS-AES模块的吞吐率比目前已知XTS-AES的最高吞吐率提高了52.28%.分析结果表明,该硬件模块完全满足现阶段高速加密存储的需要.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-