一种新型的单边带调制技术

从理论和实验两方面研究了一种新型单边带调制(SSB)技术,通过在中心站合适设置单臂强度调制器的偏置电压,使调制器产生的奇数边带被抑制,采用滤波器滤除其中的一个二阶边带,即可产生单边带信号.用该新型的单边带调制技术产生的光毫米波理论上可以传输148 km.同时搭建了实验系统,采用10 GHz的本振信号源与2.5 Gbit/s的数字信号混频后驱动单臂强度调制器产生抑制奇数边带的调制信号,再通过一个滤波器得到20 GHz的单边带毫米波,还得到了不同载波边带比(CSR)情况下的毫米波眼图.通过实验分析不同载波边带比对传输性能的影响,发现载波边带比为0 dB时,传输性能最佳.     

改进的基于多倍频的单边带调制ROF全双工系统

利用单边带调制技术,设计了一种改进的毫米波光纤传输系统,进行了系统色散分析及仿真实验.该系统在中心站通过设置相位调制器的偏置电压,使调制器产生的奇数边带被抑制,采用滤波器滤出其中的一个二阶边带.基带信号经过中频调制形成副载波,再将此副载波通过单边带调制到二阶边带上;在基站,通过带通滤波器滤出上行链路所需的光载波.用该单...     

单边带信号的分析

单边带信号调制是在双边带信号的基础上抑制掉一个边带的调制方式.双边带信号含有上下两个边带,两个边带完全对称,并且含有相同的信息.两个边带所携带的信息相同,完全可以用一个边带来传输全部消息.因而单边带信号即是把其中的一个边带抑制掉,仅传输其中的一个边带的调制方式,它节省了载波功率,调制效率也得以提高.它的带宽是双边带带宽的一半,频率利用率高.单边带信号解调采用相干解调法.这里对单边带信号的实现和解调进行了验证分析.     

用IQ调制器产生载波抑制单边带信号的研究

载波抑制单边带调制是一种特殊的幅度调制形式,它将载波和另一个边带抑制,提高频带利用率,增加了光纤的传输容量。并可有效抑制色散,延长信号的传输距离。被广泛应用于长距离高频微波ROF系统中。文中详细分析了利用商用铌酸锂调制器产生载波抑制单边带信号的原理,并据此分析,搭建了试验系统,分别产生了±1阶(即长波方向和短波方向)的载波抑制单边带信号。     

基于多频相位调制的光学单边带调制器研究

提出了一种基于多频相位调制技术实现光学单边 带调制信号产生的新型方案。当含有基频和谐波成分的多频调制信号施加到Mach-Zehnder( MZ)电光调制器上时,若驱动信号波 形选取合适,可使调制后的光信号功率集中在边带谱的一个频率成分上,其它频率成分被抑 制, 从而获得光学单边带调制信号的输出。以十频相位调制为例,计算了与之对应的光学单边带 调 制信号的光谱结构,其中信号能量利用率近88%,载波抑制比大于24dB,边频抑制比大于18 d B, 从理论上证明了本文所述方案的可行性。进一步的仿真结果显示,随着驱动信号谐波数的增 加, 载波抑制比、边频抑制比和信号能量利用率均逐渐增大。可见,为了获得优质的光学单边带 调 制信号,应在实际条件允许的情况下使用尽可能多的调制频率。此方案能量利用率相对较高 , 仅用到了一级商用MZ相位调制器,方案结构简单,是一种产生光学单边带调制信号的有效途 径。     

双级单边带调制产生光纤载太赫兹信号的系统性能分析

提出了一种应用于光纤载太赫兹通信系统(ToF)中双级级联单边带(DSSB)调制的新方案.该方案首先抑制载波双边带调制产生太赫兹波;然后选择载波抑制双边带中的一个边带进行一级单边带数据调制,在数据调制过程中再次采用基带单边带调制技术,由此产生双级级联单边带调制.另外,为了实现系统的优化,对系统中的一些关键参数进行了调整及性能测试,例如:上下边带的衰减比、复用器的带宽、滤波器的带宽等.最后,在系统性能最佳的状态下进行分析,结果显示:对0.1 THz中频载波、数据速率为5 Gbit/s的光载太赫兹信号进行80 km光纤传输,无色散补偿的误码率(BER)仅为1×10~(-11).数量级、接收机灵敏度为-28.8 dBm.     

基于相位调制器产生光毫米波的全双工光纤无线通信系统

提出并实验研究了一种基于相位调制器产生光毫米波信号的全双工光纤无线通信(RoF)系统。在中心站采用相位调制器结合滤波的方法产生重复频率为40GHz的载波抑制双边带毫米波信号,利用交叉复用器分离开毫米波信号的上下边带,其中的一个边带强度调制数据速率为2.5Gbit/s的下行基带信号,另一个边带被发送到基站调制上行传输的基带数据。该系统抗色散效果好,在经过40km标准单模光纤上/下行传输数据速率2.5Gbit/s的基带信号后,双向的传输功率代价都小于0.5dBm。在光纤无线通信系统中采用相位调制器结合滤波的方法产生光毫米波,同时基于波长重用技术再生上行光载波信号,可以简化中心站和基站配置,节约系统成本。     

基于相移超结构光栅的ROF单边带调制系统

提出了一个利用相移超结构光栅构建的典型ROF单边带调制系统。改变倾斜角,光栅就会呈现不同的传播特性。将不同的相移插入光栅的不同位置就会得到不同的透射谱特性。因此该光栅可视为滤波器应用于单边带调制系统中。反射谱的负斜率特性使得低阶边带会经历更高的衰减。所以,仅仅使用一个相移超结构光栅就可以简单地实现双边带到载波单边带的转换。与此同时,还可以通过改变光栅的倾斜角优化光载波抑制比。在实验中,60 GHz的毫米波信号产生的同时光载波抑制比也由33.02 dB优化到1.31 dB,经过30 km光纤传输后的最小误码率可以达到1.966e-44,所以仅仅通过一个相移超结构光栅就可以大大提高链路性能。     

基于双平行马赫曾德尔调制器和受激布里渊散射效应的十倍频毫米波信号生成

提出了一种基于双平行马赫-曾德尔调制器(DPMZ M)和受激布里渊散射(SBS)效应的10倍频mm 波信号生成方案,具有覆盖频段高和频谱纯度高等优点。在本文方案中,低频率的射频(RF )信号通过DPMZM 对激光器发出的光波进行调制,调节直流偏置电压,使DPMZM的主调制器和两个子调制器均 工作在最小传 输点(MITP),抑制光载波和偶数边带,进一步调节两个子调制器的调制深度和移相器的相 移,抑制一阶和 七阶边带,留下三阶和五阶边带,然后利用SBS效应进行布里渊边带滤波滤除三阶边带,仅 保留五阶边带, 再经光电探测器(PD)拍频即可获得10倍频mm波信号。通过仿真实验,以10 GHz的R F信号为驱 动信号,得到了100GHz的mm波信号,验证了方案的可行性。     

用于光控相控阵的非载波再入大孔径延迟技术

基于光子谐振环的波束合成网络可实现重量轻、损耗小和成本低的相控阵天线,同时可获得宽角扫描时的大瞬时带宽和无波束偏斜扫描。为了节约光电链路的带宽,设计了一种适用于光子谐振环的光控相控阵天线波束合成网络非载波再入技术。区别于双边带调制或单边带调制加滤波和载波载入技术,利用谐振环的周期特性,将光载波和边带分置于不同的周期通带内,避免了载波载入的功分器件和滤波器件的使用、大孔径时的退相干导致的信号恶化,以及载波和边带的功率不平衡。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-