高精度振荡器及峰值固定斜坡补偿电路设计

设计了一款具有充放电电容的高性能振荡器。该振荡器基于0.5μm BCD工艺库,利用Cadence和Hspice软件,在芯片系统典型应用环境下仿真,得到的内同步振荡频率为500kHz,外部EN同步振荡频率为200kHz到2MHz;在3~5.5V电源电压下及-40~125℃温度范围内,振荡器的频率偏移在±3%以内,内部时钟CLK占空比偏移在±4%以内,补偿电压峰值偏移在±8%以内。该振荡器性能良好,已成功应用于一款DC/DC降压开关电源芯片。     

高精度振荡器及峰值固定斜坡补偿电路设计

设计了一款具有充放电电容的高性能振荡器。该振荡器基于0.5 μm BCD工艺库,利用Cadence和Hspice软件,在芯片系统典型应用环境下仿真,得到的内同步振荡频率为500 kHz,外部EN同步振荡频率为200 kHz到2 MHz;在3～5.5 V电源电压下及-40～125 ℃温度范围内,振荡器的频率偏移在±3%以内,内部时钟CLK占空比偏移在±4%以内,补偿电压峰值偏移在±8%以内。该振荡器性能良好,已成功应用于一款DC/DC降压开关电源芯片。     

一种适用于DC/DC开关电源芯片的锯齿波振荡器设计

应用于手机等通信电子产品电源系统的DC/DC开关电源变换器芯片,要求具有高性能的锯齿波振荡器.鉴于此要求,设计了一款具有级冲放电电容的高性能锯齿波振荡器.基于华润上华CSMC 0.5 μmBiCMOS工艺库,利用Cadence Spectre软件进行电路仿真,在芯片系统典型应用环境下仿真得到锯齿波振荡频率为5 MHz,信号幅值为0～3 V.频率随电源电压在2.7～5.5 V变化范围和温度在-20～100 ℃变化范围而产生的偏移在±4%以内.该锯齿波振荡器的性能良好,已经成功应用于一款DC/DC降压开关电源芯片的设计之中.     

一种用于开关电源的多模式振荡器

基于0.25 μm BCD工艺,设计了一种应用于开关电源的多模式环形振荡器,具有结构简单、三种模式可选、可修调的特点。电路通过模式切换生成可调电流的方式对电容充放电,产生不同频率的斜坡及方波信号。测试结果表明:在-40 ℃~125 ℃温度范围内,振荡器主振荡模式输出范围为483.9~518.6 kHz,与固定频率(500 kHz)的最大偏移率为3.72%,电阻频率调节模式输出范围为25 kHz~2.5 MHz,同步模式下可调同步频率范围为40 kHz~4 MHz。目前,该振荡器已被成功应用于一种DC-DC开关电源芯片中。     

一种基于LC振荡器的高效隔离式DC-DC开关电源

设计了一种基于片上变压器的隔离式DC-DC开关电源。通过分析影响开关电源能量转换效率的因素,设计了一种应用于隔离式DC-DC开关电源的LC振荡器,提高了隔离式开关电源的整体效率。采用CSMC 0.35 μm BCD工艺进行设计,并将该振荡器应用于隔离式开关电源。隔离式开关电源的输入电压为3.3 V,输出电压为5 V。仿真结果表明,时钟振荡频率为180 MHz,应用该振荡器的DC-DC开关电源最大输出电流达到62 mA,转换效率提高到35.6%。     

一种DC-DC开关变换器的片内RC振荡器

设计了一种具有扩频模式、适用于DC-DC开关变换器的片内RC振荡器。采用外部滤波修调电路来调整充放电电流,对振荡信号的频率起调节和稳定的作用。采用随机码扩频技术以减小脉冲宽度调制过程中产生的电磁干扰峰值,降低开关电源的电磁干扰。该RC振荡器基于0.5 μm BCD工艺进行设计。仿真结果表明,该RC振荡器可以对振荡时钟进行修正,有效降低了电磁干扰。该RC振荡器在非扩频模式时,可以通过外部电路来调整振荡频率偏差,振荡频率为18 MHz,占空比为50%,功率谱峰值为-0.05 dBm。与非扩频模式相比,该RC振荡器在扩频工作模式下的振荡信号功率谱峰值降低了19.95 dBm。     

降压式DC-DC电源管理芯片中振荡器电路的设计与研究

文章为一款降压式DC-DC电源芯片提供一种高性能的振荡器电路以及斜坡发生器,并对其工作原理进行了分析.文章采用中芯国际0.18μm CMOS工艺,在Cadence软件下,利用specture电路仿真工具,对振荡器电路进行仿真.经过仿真验证,该电路振荡频率在3.3V,27℃的典型环境下,中心振荡频率为672.4 kHz,...     

电流模式开关电源中的高精度锯齿波振荡器设计

提出了一种用于开关电源芯片的高性能锯齿波振荡器。基于U-I转换器原理．设计了精密电流产生电路;利用系统内部基准电压,设计了一种门限电压产生电路。从而有效地提高了振荡器频率稳定度和精度。基于TSMC0．5灿mBCD-Y-艺,利用Spectre软件进行电路仿真,在芯片典型应用环境下仿真得到锯齿波振荡频率为132kHz。频率随电源电压在3．6-6．4V变化范围和温度在-27-27℃变化范围以内可控制其偏移在±3％以下。该锯齿波振荡器已经成功应用于一款AC／DC降压开关电源芯片的设计中。     

一种适用于BUCK型DC-DC芯片振荡器电路设计

基于0.5μm UMC工艺库,设计了一款高性能振荡器,在电路的设计中加入延迟电路以改变输出频率的占空比,同时加入分频电路使得频率的输出更加多样化以满足不同的频率需求。利用Cadence和Hspice软件进行电路设计与仿真。结果显示,在系统典型应用环境下该振荡器内同步振荡频率为1.1 MHz;当温度在–40~+125℃变化时,输出频率随温度的变化率仅为4.5%;当电源电压在3.0~5.5 V变化时,输出频率的变化率仅为3.6%。该振荡器的性能良好,已成功应用于一款DC/DC降压电源管理芯片之中。     

带电压前馈的固定充放电时间锯齿波振荡器

设计了一种用于降压型DC-DC开关电源转换器的锯齿波振荡器。利用电压前馈方法和固定充放电时间方法,实现了锯齿波幅度随电源电压线性变化且频率固定的锯齿波振荡器,抑制了电源电压突变时的输出电压过冲。基于0.18 μm BCD工艺进行设计和仿真。仿真结果表明,该锯齿波振荡器产生的锯齿波频率为2.73 MHz。在2.7~5.5 V电源电压、-55 ℃~125 ℃温度范围内,频率偏移在±6%以内。振荡幅度在0.576~1.470 V范围内随电源电压线性变化。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its