基于FPGA器件的Sobel算法实现

简要介绍了图像边缘检测技术中Sobel算法,给出了基于FPGA件Sobel算法实现方案,分析了VHDL行为建模在电子设计中的优点,同时给出了关键部分的设计代码。     

图像边缘检测Sobel算法的FPGA仿真与实现

针对目前数字图像处理速度不足的问题,提出一种使用硬件FPGA芯片实现Sobel边缘检测的方法.由于FPGA在并行结构和流水线结构具有天然优势,通过提高算法的并行性,可以大幅提高Sobel边缘检测速度.采用模块化方式构造了串/并转换模块、数据窗口生成模块和边缘检测模块,保证了系统的扩展性.使用Verilog HDL语言编写算法程序并成功进行了仿真和实现.     

实时视频信号的Sobel边缘检测的FPGA实现

在实时视频信号处理中,由于边缘检测等图像处理算法的数据量大,系统采用FPGA+DSP的图像处理方案。利用FPGA可对数据并行处理的特点,在FPGA中实现数据量大、处理速度要求高,但算法结构简单的低层处理算法。文中介绍了在FPGA中实现Sobel边缘检测算法的方法,并提出了自适应阈值的处理方案。实验结果证明,FPGA能够对实时视频信号完成Sobel边缘检测,且自适应阈值模块保证了系统在环境亮度变化的情况下,得到良好的边缘检测效果。     

基于小波变换数据融合的图像边缘检测算法

本文提出了一种基于小波变换数据融合的图像边缘检测算法。该方法对原始图像分别采用小波变换、“Sobel”算子和“Log”算子三种方法提取边缘,再将三种算法结果通过数据融合的手段获得一幅新的边缘图像。仿真实验结果表明,该方案所得到的边缘优于单独采用“Sobel”或“Log”算子所获得的边缘图像,是一种有效的图像边缘提取算法。     

基于Gabor滤波器的Sobel算子图像边缘检测算法

Sobel算子对图像进行边缘检测时,只对垂直与水平方向敏感,使得一些边缘检测不到,从而限制了Sobel算子的检测性能.针对此问题,文中提出了一种基于Gabor滤波器的边缘检测算法,先对图像进行Gabor变换,找出不同方向上人眼敏感程度低的系数,再用Sobel算子对变换过的图像进行边缘检测,最后把此图像与直接用Sobel算子检测的图像相加.实验表明,该算法改善了Sobel算子检测方向单一的不足,包含较多的边缘信息.     

基于FPGA的实时边缘检测系统

提出一种基于FPGA的实时边缘检测系统,运用Verilog语言实现了系统的数据采集、存储和显示.并针对目前边缘检测易受噪声影响的缺点,采用一种结合中值滤波和改进的Sobel边缘检测的图像预处理算法.通过与经典Sobel边缘检测算法处理后的图像相比较.证明所研制的系统对图像噪声干扰有较强的抑制能力,且提取的边缘定位较准确...     

实时图像双边缘检测算法及FPGA实现

传统的单独采用Roberts和Sobel算子对实时图像的边缘进行检测,其检测出的结果在边缘精度和抗噪能力方面都有待提高。首先将实时图像经过中值滤波来去除噪声,然后再进行Roberts边缘和Sobel边缘检测,实现双边缘检测,最后将得到的边缘数据在FPGA上实现。实验结果表明,双边缘检测优于单独采用Roberts或Sobel边缘检测算法,检测出的边缘更加清晰,抗噪能力增强。     

Edge Detection Algorithm Based on Grey Relational Analysis with Improved Sobel Operator

针对经典Sobel模板梯度方向信息不充分和抗噪能力较差的缺点,对其进行改进,并结合灰色关联分析方法,提出一种基于改进Sobel模板的灰色关联分析边缘检测新算法.该方法将经典的Sobel模板从2个方向的3×3阶的规则矩阵扩展成4个方向的不规则矩阵,利用改进的Sobel模板作为参考序列,通过灰色系统理论中的灰色关联分析进行边缘检测.实验结果表明该方法可以获得很好的边缘特性,并具有较强的抗噪能力.     

Sobel边缘检测算法的变异实现图像增强

简述了在传统Sobel边缘检测算法的基础上进行算法创新.在边缘检测和图像增强算法中引入了区域运算的概念.详细介绍了Sobel边缘检测算法的具体改进过程,并针对红外图像进行了实际应用.     

基于CCS的图像边缘检测和提取设计

Matlab对数字图像的处理在工程化方面存在一定的不足。针对这一不足,利用硬件仿真平台CCS,采用数字图像灰度梯度最大值法、Sobel算子边缘检测算法对数字图像进行检测,实现了数字图像的边缘提取。实验表明,Sobel算子边缘检测算法对数字图像进行边缘检测和提取的效果比较理想,且为图像处理提供了一种硬件实现方法。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.