一种基于Gauss-Seidel方法的空时多用户检测算法

为了提高DS-CDMA系统的容量,提出了一种基于高斯-赛德尔(Gauss-Seidel)迭代算法的空时多用户检测算法.针对高斯-赛德尔迭代算法容易引起的误差扩散,改进算法同时从正反两个方向进行串行干扰消除,并借助最大似然序列准则进行判决,有效地抑制了误差扩散的影响.仿真结果表明,改进算法具有更快的收敛速度和更优的误码性能.     

FSO中分层空时编码的误码性能

分层空时编码(BLAST)虽然具有极高的频谱效率,能成倍提高光通信系统的信息传输速率,但BLAST系统的误码率较大,严重影响了光通信系统的可靠性。在描述了湍流信道中多输入多输出(MIMO)系统的信道模型后,针对多进制脉冲位置调制(Q-PPM)技术,推导出了采用线性译码算法时分层空时码的极大似然判决准则及其误码率公式,并比较了最大似然译码算法、线性译码算法、串行干扰消除译码算法的误码性能。最后,利用仿真实验进行了验证。结果表明:在自由空间光通信(FSO)中,串行干扰消除译码算法的误码性能更接近最大似然译码算法的性能,明显优于线性译码算法。在4×4系统中,当误比特率为2×10-2时,相对于最小均方误差(MMSE)译码算法,最大似然译码算法和MMSE-SIC译码算法的信噪比分别改善了约14.5 dB和7 dB。理论分析与实验结果相一致。     

V-BLAST系统中一种基于噪声分析的简化最大似然检测算法

该文基于对贝尔实验室垂直分层空时系统中的噪声分析,提出了一种简化的最大似然检测算法。该算法选取多维空间中参考直线附近的若干信号点构成候选子集,并利用最大似然准则在该子集中选取合适的向量作为对发射信号的最终估计。性能分析和仿真表明,该算法在保证接近最优误码性能的前提下,具有更低的计算复杂度,并且解决了噪声增强问题。     

采用改进ML-OSIC的MIMO联合检测

在垂直分层空时码(V-BLAST)多输入多输出(MIMO)系统中,最大似然检测算法(MLD)可以获得最佳的差错概率性能,但是其算法复杂度随着天线数目及其搜索空间数目呈指数增长;排序连续干扰消除(OSIC)算法具有高可行性的优点,但是其误码率由于无法防止误码扩散的原因而下降。基于OSIC算法复杂度主要来源于矩阵求逆运算,提出了一种改进的OSIC算法,该算法采用并行检测与精确检测值相结合的方案,在维持相对满意性能的情况下,减少算法复杂度。考虑到传统OSIC算法的误码扩散,将改进的OSIC算法与ML算法相结合,利用ML的穷尽搜索方式来提高算法的整体性能。为了避免ML算法给系统复杂度带来负担,通过一定的复杂度公式优先选出b层进行改进的OSIC算法,剩余的误差累积层使用MLD执行。仿真结果表明,所提算法复杂度小于传统OSIC算法,同时得到了接近ML算法的性能。     

HF信道准最大似然序列检测技术的研究

本文在研究用于克服码间串扰的最大似然序列检测技术的基础上，提出了一种准最大似然序列检测方案，用于短波话带串行体制数传ＭＯＤＥＭ，该方案中采用预判决反馈减小信道状态有效分量的数目和简化维持比算法等方法，减小了运算量，模拟分析表明，该方案的误码性能优于平方根卡尔曼算法的判决反馈均衡器方案。     

联合QR分解和最大似然V-BLAST检测算法

结合迭代QR分解和最大似然检测提出一种新的联合检测算法。算法首先使用改进迭代QR分解得到发送符号向量nT个估计,随后使用最大似然检测算法在nT估计向量寻找最佳判决向量。分析表明,联合检测算法复杂度是连续干扰消除算法的1/5。仿真试验表明,联合检测算法性能优于连续干扰消除算法。     

基于Gibbs采样的MIMO信号检测改进算法

针对传统Gibbs采样算法的“失控问题”,提出了一种改进算法,在Gibbs迭代采样过程中加入对噪声方差的估计,消除了失控问题。设计了信号检测流程,将最大似然( ML)检测的搜索过程嵌入Gibbs迭代采样过程,减少了最大似然检测的计算步骤。仿真结果表明,所提算法能估计噪声方差,具有接近最大似然检测的性能。     

CPM调制的迭代检测技术

CPM信号具有包络恒定、峰均比小、功率利用率高的优点。针对CPM信号的特征,比较了最大似然序列检测Viterbi算法和逐符号的最大后验概率(MAP)解调算法的特点,重点研究了使用迭代检测技术进行软输入输出解调及译码的MAP解调方法。在AWGN信道条件下对CPM全响应和部分响应信号进行了误码性能仿真,结果表明采用相干解调和译码,迭代检测方案可得到较高的编码增益。     

一种低复杂度的差分酉空时调制多符号球形译码算法

该文提出了一种瑞利衰落信道下差分酉空时调制系统中多符号差分球形译码的改进算法。该算法在执行球形译码的最大似然度量搜索时,仅对具有较小最大似然度量的部分测试符号进行搜索,从而大大减少了搜索的次数,同时提出了一种逐项进行的最大似然度量计算方法,可以尽早发现超过搜索范围的测试符号并终止计算,在避免无谓的运算负担的同时得到所需的具有较小最大似然度量的部分测试符号。仿真表明,在适中的信噪比范围内,该算法在牺牲少量系统性能的基础上降低了超过50%的运算量。     

分布式空频编码协同通信系统分段ML迭代检测算法

该文针对频率选择性衰落下的多中继分布式空频编码协同通信系统,提出了一种分段最大似然迭代检测算法。目的节点将每一个分布式空频编码的频域向量划分成若干小段,分别对其进行最大似然迭代检测。理论分析和仿真结果表明,该迭代最大似然检测算法收敛速度快,且显著降低了分布式空频编码协同通信系统检测算法的复杂度,具有较高的实用价值。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.