共查询到19条相似文献,搜索用时 125 毫秒
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通过将二级光栅直接刻在脊形波导AlGaInAs/AlGaAs DFB激光器的无铝光波导层上,实现了波长约为820nm,单面功率为30mW的单纵模激光器.由于采用无铝光栅,保证了二次外延质量,从而得到较好的器件性能.激光器的阈值电流为57mA,斜率效率约为0.32mW/mA. 相似文献
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Littrow型光栅外腔半导体激光器的输出特性分析 总被引:1,自引:0,他引:1
在讨论光栅外腔半导体激光器理论的基础上.对影响Littrow型光栅外腔半导体激光器输出功率和线宽压窄的各种因素进行了数值模拟分析.研制了单纵模高质量激光输出的Littrow型光栅外腔半导体激光器,在工作电流为400 mA时,连续输出功率达到180 mW,线宽优于1 MHz. 相似文献
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取样光栅分布反馈激光器阵列器件研究 总被引:2,自引:1,他引:1
采用了一种基于取样光栅原理制作多通道增益-折射率耦合型光栅的方法,成功制作了8波长分布反馈(DFB)激光器阵列,阵列中各激光器的阈值电流为30~40 mA,注入电流为100 mA时的平均输出光功率为10mW,阵列器件实现了波长的可选择性激射,相邻激光器间的频率间距为200 GHz,验证了用取样光栅方法制作DFB激光器阵列的可行性。 相似文献
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在n-InP衬底或GaInAsP波导层上,使用氩离子激光器全息曝光方法刻制二级光栅,进行低温液相外延生长.再利用已有的DC-PBH激光器的制作工艺技术,构成了分布反馈双沟道平面掩埋异质结激光器(DFB-DC-PBH LD).15℃连续工作最低阈值电流为63mA,典型值70-120mA,线性输出光功率大于4mW,外微分量子效率为5~8.3%,主模波长λ温度漂移系数△λ/△T为0.8~1.0A/℃,静态单纵模较好,在400Mbit/s,700Mbit/s和1.4Gbit/s,20mA脉冲电流随机码调制下,单纵模工作稳定.相同条件下,DC-PBH LD单纵模明显变为多模或跳模. 相似文献
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A complex-coupled DFB Laser with sampled grating has been designed and fabricated. The key concepts of the approach are to utilize the +1st order reflection of the sampled grating for laser single mode operation, and use a conventional holographic exposure combined with the usual photolithography to fabricate the sampled grating. The typical threshold current of the sampled grating based DFB laser is 25mA, and the optical output is about 10mW at the injected current of 100mA. The lasing wavelength of the device is 1.5385μm, which is the +1st order wavelength of the sampled grating. 相似文献
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A complex-coupled DFB laser with sampled grating has been designed and fabricated. The method uses the + 1 st order reflection of the sampled grating for laser single-mode operation. The typical threshold current of the sampled grating based DFB laser is 25 mA, and the optical output is about 10 mW at the injected current of 100 mA. The lasing wavelength of the device is 1.5385μm, which is the +1 st order wavelength of the sampled grating. 相似文献
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Ligeret V. Holleville D. Perrin S. Bansropun S. Lecomte M. Parillaud O. Calligaro M. Krakowski M. Dimarcq N. 《Electronics letters》2008,44(13):804-806
Low linewidths for Al-free active region distributed feedback lasers using a self-heterodyne measurement method (minimum beat width of 0.8 MHz at 20 mW and 12 C, 1.2 MHz at 852.12 nm 35 mW and 36 C) are demonstrated. Singlemode emission was achieved at 852.12 nm corresponding to the D2 caesium transition, with an optical output power of 35 mW at 140 mA under CW operation. Finally, the saturation spectra of caesium atoms with the DFB laser diode was recorded with a resolution close to the natural linewidth. 相似文献
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Twu Y. Karlicek R.F. Wynn J.D. Green C.A. Roxlo C.B. Wang S.J. Dutta N.K. 《Electronics letters》1989,25(16):1045-1046
The performance characteristics of quarter-wave shifted GaInAsP distributed feedback lasers emitting near 1.3 mu m are described. The quarter-wave shifted grating is fabricated on a substrate using the double-exposure holographic technique. The low reflectivity required for this quarter-wave shifted DFB laser is obtained using buried facets at both ends of the laser. The lasers have threshold current of 30 mA, quantum efficiency of 0.18 mW/mA/facet, bandwidth of 11.5 GHz at 10 mW and 10 dB chirp width of 2.5 AA under 40 mA modulation current at 5 Gbit/s.<> 相似文献
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Asonen H. Nappi J. Ovtchinnikov A. Savolainen P. Zhang G. Ries R. Pessa M. 《Photonics Technology Letters, IEEE》1993,5(6):589-591
The authors discuss the fabrication and characteristics of high-power (P CW=430 mW) InGaAs/InGaAsP/InGaP ridge waveguide lasers emitting at λ=0.98 μm, which is the optimum wavelength for pumping erbium-doped fiber amplifiers. In the past, high-power operation of Al-free pump lasers has been limited to 150 mW because of catastrophic optical damage of the mirror facet. This problem has been largely removed by increasing the spot size of the laser with the aid of an improved waveguide design. As a result, Al-free lasers can now achieve a maximum power comparable to the conventional GaAlAs-based pump lasers for λ=0.98 μm 相似文献
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Cao H.L. Luo Y. Nakano Y. Tada K. Dobashi M. Hosomatsu H. 《Photonics Technology Letters, IEEE》1992,4(10):1099-1102
Grating duty factor strongly affects the performance of gain-coupled (GC) distributed feedback (DFB) laser diodes with an absorptive grating. Through numerical analysis the authors have found an optimum value in the duty factor for their low threshold operation. The minimum threshold gain achievable at this optimum duty factor is found to be almost independent of the order of the grating. According to this prediction, the authors have fabricated GaAlAs/GaAs GC DFB lasers with a third-order absorptive grating where the grating duty factor has been made close to the theoretical optimum value. In 200-μm-long devices with both facets as-cleaved, low CW threshold current of 25 mA, external efficiency of 0.5 mW/mA, and SMSR as high as 45 dB have been obtained, which is qualitatively consistent with the analysis. High yield of single mode oscillation seems to be the result of the gain coupling 相似文献
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Tsang W.T. Choa F.S. Wu M.C. Chen Y.K. Logan R.A. Sergent A.M. Burrus C.A. 《Photonics Technology Letters, IEEE》1992,4(3):212-215
Successful operation of long-wavelength InGaAsP low-threshold-current gain-coupled DFB lasers was demonstrated by using an InGaAsP quaternary grating that absorbs the DFB (distributed feedback) emission. The amount of gain (loss)-coupling is controlled by the composition (bandgap) and thickness of the grating quaternary and the InP-spacer layer between the grating and the active layer. With optimally designed lasers, CW (continuous-wave) threshold currents were 10-15 mA (250-μm cavity, as-cleaved), slope efficiency was ~0.4 mW/mA (both facets) and SMSR (side-mode suppression ratio) was as high as 52 dB. The laser operated in the same DFB mode with SMSR staying ~50 dB throughout the entire current range. At 100°C, the CW threshold current stayed low, ~50 mA, and SMSR was ~40 dB. Results also indicate that the presence of gain-coupling removes the degeneracy in lasing wavelength 相似文献