| High-Power Distributed Feedback Laser Diodes Emitting at 820nm |
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| 作者姓名： | Fu Shenghui Zhong Yuan Song Guofeng Chen Lianghui |
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| 作者单位： | 中国科学院半导体研究所，北京 100083;中国科学院半导体研究所，北京 100083;中国科学院半导体研究所，北京 100083;中国科学院半导体研究所，北京 100083 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 通过将二级光栅直接刻在脊形波导AlGaInAs/AlGaAs DFB激光器的无铝光波导层上,实现了波长约为820nm,单面功率为30mW的单纵模激光器.由于采用无铝光栅,保证了二次外延质量,从而得到较好的器件性能.激光器的阈值电流为57mA,斜率效率约为0.32mW/mA.
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| 关 键 词： | 分布反馈激光器 无铝光栅 脊形波导 distributed feedback laser diodes Al-free gratings ridge-waveguide 激射波长 大功率 分布反馈 激光器 Laser Diodes slope efficiency threshold current laser diodes surface cladding layer yields device performance front facet output power single longitudinal mode distributed feedback |
| 文章编号： | 0253-4177(2006)06-0966-04 |
| 收稿时间： | 1/13/2006 4:54:21 PM |
| 修稿时间： | 2/27/2006 3:59:24 PM |
High-Power Distributed Feedback Laser Diodes Emitting at 820nm |
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| Fu Shenghui,Zhong Yuan,Song Guofeng,Chen Lianghui.High-Power Distributed Feedback Laser Diodes Emitting at 820nm[J].Chinese Journal of Semiconductors,2006,27(6):966-969. |
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| Authors: | Fu Shenghui Zhong Yuan Song Guofeng and Chen Lianghui |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | By etching a second-order grating directly into the Al-free optical waveguide region of a ridge-waveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode.The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance.The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA. |
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| Keywords: | distributed feedback laser diodes Al-free gratings ridge-waveguide |
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