大视场凝视型红外共形光学系统设计

为提高导弹整流罩气动性能,增强导引头系统稳定性,增大观察视场,完成了共形整流罩结合红外鱼眼镜头的新型红外凝视成像导引头光学系统设计。光学系统采用的椭球形共形整流罩将反远距结构与f-θ成像相结合,通过控制像方视场角提高像面照度的均匀性。对不同结构共形系统的像差特性进行了分析。光学系统解决了大视场光阑像差问题,最终获得±90°的无渐晕观察视场,其冷光阑效率为100%,全视场MTF在15 lp/mm处均大于0.5,点斑均方根半径小于30μm,在半径为50μm圆内能量集中度为93%以上,像面相对照度高于85%,满足大视场光学系统的成像要求。     

大视场大孔径制冷型红外光学系统设计北大核心CSCD

介绍了适用于4096×4096,F/#1的大靶面制冷型中波探测器的大视场大孔径红外成像系统的设计方案,采用二次成像的方式,减小大物镜的口径,提高孔径利用率;计算得到满足要求的初始结构,并分析了像差特性;通过优化初始结构、采用折/衍混合器件及非球面等方式校正大口径大视场带来的高阶像差。系统工作波段为37~48μm,焦距为60mm,视场角2ω=52°。全视场在50 lp/mm处的MTF高于045,满足设计要求。经过设计优化,实现了100冷光阑效率。     

激光显示广角球幕投影镜头设计

激光显示具有色域大、颜色饱和度高、显示画面尺寸灵活可变、无电磁射线辐射等优点。本文根据应用要求,研究和设计了一种用于球幕投影的激光显示广角镜头。分析和计算了激光三基色的白场和光功率匹配参数。投影物镜采用远心反远结构,并且为全球面光学系统,易于加工和检测。设计中有效地控制了系统畸变,利用光阑像差提高了投影显示像面边缘的光照度,改善了像面照度的均匀性,解决了广角系统中像面照度不均匀和畸变控制的难题。投影系统焦距为11.3mm,F#数为2.5;全视场角可达到110°。Nyquist频率处,90%视场内MTF大于0.6,像面照度均匀性优于95%,全视场畸变小于1.5%;色差小于0.5pixel。分析结果表明,本文提出光学设计思路和方法可行,满足应用需求。     

近红外大数值孔径平场显微物镜设计

为满足飞秒激光微纳加工系统对高加工精度和大加工范围的需求，首先确定了该系统的重要组成部分-无限共轭距显微物镜所需具备的特性及设计指标。依据薄透镜组的初级像差理论，针对飞秒激光波长推导出光学系统为校正匹兹凡场曲和二级光谱所需满足的条件。该镜头由11片球面透镜构成，所选用材料皆为国产玻璃，同时避免三胶合结构的使用。设计了一套工作波长为785~815 nm，数值孔径为0.9，像方视场为22.5 mm，放大倍率为40的近红外平场复消色差显微物镜。设计结果表明:该镜头的MTF良好，全视场波像差均小于0.08，各种几何像差均远小于公差且满足平场和复消色差条件，能量集中度高。使用补偿器放松材料公差、加工公差和装调公差，公差分配后全视场RMS波像差小于0.09，满足实际应用要求。     

超轻小宽视场高分辨无人机机载相机光学系统设计

针对无人机光学载荷宽视场、高分辨、轻小型、实时成像等需求，基于级联光学结构设计了一种折叠式级联相机光学系统。该光学系统主要由前置折叠同心物镜和中继转像透镜阵列组成。前置折叠同心物镜获取宽视场中间像，位于前置折叠同心物镜的同心球面上。中继转像透镜阵列对同心球面上的宽视场中间像进行视场细分、剩余像差精细校正和中继成像。优化设计得到了全视场角为109.6°、瞬时视场为7.8″，筒长仅为107 mm的折叠式级联结构相机光学系统。在全视场范围内，像面上各处光线追迹点列图的均方根半径均小于1.1μm，在空间频率230 lp/mm处，各视场调制传递函数值大于0.4，系统成像质量接近衍射极限。这种折叠式级联结构无人机机载相机光学系统视场大、分辨率高、结构紧凑，可用于无人机遥感领域，在大视场范围内获得高分辨率光学像的同时，还可实现光学系统的小型化和轻量化，具有广阔的应用前景。     

大视场小型无热化长波红外镜组设计

跟随红外镜头小型化、大视场化的趋势,利用ZEMAX设计了一款大视场无热化小型长波红外镜组。系统匹配384×288@17μm的非制冷型长波红外探测器,工作波段为8～12μm。系统F数为1.6,相比于传统红外镜头,视场角更大,全视场达72°,尺寸更小,总长仅为6.96 mm。主镜头仅用3片镜片,通过两种红外光学材料的搭配以及6面非球面实现像差的校正和光学系统的无热化,工作温度范围覆盖-40～60℃。仿真结果表明,在空间频率15 lp/mm处,全视场的调制传递函数大于0.5,空间频率30 lp/mm处,全视场调制传递函数大于0.15。同时为了增大红外探测器的填充因子,提高能量利用率,在系统中搭配设计了放置于红外传感器前的微透镜阵列。实现了红外光学系统的小型化,为红外热像仪在智能手机上的应用提供了解决方案。     

小型化同心反射式手机镜头设计

基于现代社会对手机镜头高像素、小型化的要求,基于同心透镜原理设计了同心反射式手机镜头。通过光路计算,求解了系统的球差表达式,进一步获得了系统的初始结构。利用光学设计软件设计了光学系统,镜头采用像元大小为1.25 μm的曲面传感器,光学系统的F数为1.8,焦距为2.7 mm,最大全视场角为100°,系统总长为2.7 mm。设计结果表明,在空间截止频率400 lp/mm处,0.7视场的调制传递函数均大于0.34,全视场的调制传递函数均大于0.23,各视场的弥散斑半径均小于艾里斑。在全视场内,相对照度高于0.64,该设计满足手机镜头成像要求。     

基于CODE Ⅴ的手机摄像镜头光学设计

为了满足市场对微型、简单化手机摄像镜头的需求,运用光学设计软件CODEⅤ,结合非球面透镜理论,设计出用于可见光波段且符合结构简洁、生产成本低的要求的手机定焦镜头。该镜头F数为2.05,视场角为62°,半像高为2.4mm,系统总长度为5.59mm。为了使结构紧凑并且最大限度地降低生产成本,在结构设计中采用非球面的塑料镜片。设计结果显示:镜头的适应像素尺寸是1.1μm×1.1μm,相应的尼奎斯特频率为454lp/mm,在1/2尼奎斯特频率处绝大部分视场调制传递函数(MTF)值大于0.4,各个视场的横向像差均小于9.26μm,均方根(RMS)半径都在艾里斑之内,畸变小于1%,获得良好的成像效果。     

LED数字投影机短焦投影物镜设计

为实现LED 数字投影机短距离内投影出更大的画面,文中针对此类投影机的结构特点,通过理论计算和ZEMAX 光学设计软件的优化,开发设计一款适用于LED 光源0.7 in（1 in=2.54 cm）单芯片数字投影机的短焦投影物镜。给出工作波长为462~625 nm、全视场角为84、相对孔径为1:2.4、焦距为10 mm、后工作距离大于20 mm 的镜头设计实例。镜头有较好的成像质量, 在分辨率极限40 lp/mm 处, 0.7 视场以内的MTF 值均大于0. 5,全视场畸变量的绝对值小于1.5%,像质优良。设计结果显示,文中提出的设计方法有利于降低投影系统成本,实现产业化生产。     

利用光纤传像束的内窥镜物镜设计

光纤传像束用于内窥镜时,对内窥镜物镜的结构型式和成像质量提出了新的要求。在分析了其基本设计原则后,根据实际需求,选用反远距型物镜作为初始结构,利用Zemax软件优化设计了一个工作波段0.38~0.78 m,焦距0.921 mm,全视场100、相对孔径1/4的内窥镜物镜。镜头总长10.32 mm,满足像方远心要求,在38 lp/mm频率处MTF值在0.85以上,像质优良;同时,在Tracepro软件中建立了所设计物镜与光纤传像束结合后系统的模型,模拟的系统耦合效率约为96%且出射端照度均匀。结果表明:该物镜具有视场大、短焦距、结构合理、耦合效率高、像面照度均匀等特点,满足内窥镜要求。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.