5G网络能力开放安全架构和流程研究

5G网络能力开放的业务需求随着5G网络的规模商用正不断涌现，对网络能力开放的安全保障也逐渐成为运营商重点关注的问题，基于此，对5G网络能力开放的安全架构和流程进行了研究。首先，介绍了3GPP定义的网络能力开放框架CAPIF的相关功能实体和架构；其次，分析了CAPIF安全架构中各个接口的安全策略和流程，并对运营商针对各个接口的安全策略进行了建议；最后，对CAPIF安全架构的发展进行了展望。     

5G网络架构基于软件定义网络的分析

随着移动通信技术的不断发展,5G网络的出现已经成为必然,而5G网络对于当前互联网和移动互联网技术的要求也在不断提升,在网络架构上倾向于采用软件定义网络进行架构,实现5G网络技术的应用.本文主要对基于软件定义网络的5G网络架构进行了分析探讨,以期能够为5G网络架构的实现打下基础.     

5G安全技术研究现状及发展趋势

5G技术的广泛应用给人们生活带来极大便利,同时也对移动通信安全架构提出了新的要求。从5G应用场景出发,分析了新场景下的主要应用特点和面临的安全挑战,阐述了5G网络安全需求和5G安全技术架构,从安全认证、隐私保护、切片安全、终端安全等几个关键领域对5G安全技术和研究现状进行了介绍,并从技术架构、部署理念、应用需求三方面总结了5G安全技术的发展趋势。     

5G网络业务、架构和关键技术

随着4G网络的全面商用和移动互联网业务的迅猛发展,4G网络的架构已经难以满足新的业务需求,因此下一代5G网络技术的研发和标准化进度不断加快和提前.本文针对目前5G网络的需求、业务应用、部署架构和关键技术进行总结分析,梳理并构建5G网络技术知识体系,为5G网络的学习和研究提供整体性和方向性参考.     

5G无线网络架构对传输网的影响分析

随着移动通信技术的突飞猛进,各行各业加快了应用5G无线网络的进程,因为现有环境的局限性,怎样进行5G无线网络的良好架构,是当前各个领域关注的焦点之一。随着研究的逐步深入,人们开始发现5G无线网络的蜂窝架构,同时诸多5G网络的优点也被挖掘出来。对于传输网来说,5G网络具有极其重要的作用,同时,强化传输网的兼容性、对结构层次实施改善、对网络传输体验进行完善、对应用业务实施优化等,是整体优化5G无线网络构架的有效措施。本文将详细讨论5G无线网络架构对传输网的影响。     

5GC安全态势感知系统研究

作为新一代移动通信的关键基础设施，5G引入了新技术和新架构，同时也面临更复杂的安全风险和威胁。5GC作为5G网络架构的关键部分，其安全需求一直是重要的研究课题。5GC安全态势感知系统是应对5G安全挑战、助力高效安全运营5G网络的重要技术手段。首先介绍了安全态势感知的基本理念，分析了5G 网络尤其是核心网的安全需求，并全面论述了 5GC 网络安全态势感知系统的设计，包括系统架构以及关键技术。     

SDN下的5G移动通信网络架构研究

互联网技术的迅速发展下,带动来移动设备产业的发展,为移动通讯系统的改革提供了良好发展契机.对于传统的移动通信网络架构,也在随着时代的发展以及技术的进步在不断优化,5G移动通信技术的出现,对网络架构就有着更高的要求.本文主要就5G移动通信主要技术和SDN网络架构加以阐述,结合就SDN下5G移动通信网络架构的设计进行探究.     

5G核心网云网一体化运维

全球大多数主流运营商已转向5G独立组网架构,并开始了5G独立组网架构的商用部署。5G核心网采用网络功能虚拟化技术,将通用的计算、存储、网络等硬件形成多种虚拟资源,基于需要实现网络功能及资源动态灵活性部署。随着网络功能虚拟化的5G核心网的大规模商用部署,5G核心网的运营维护也面临新的挑战。分析了5G核心网的虚拟化部署方案带来的运营维护工作难点,提出5G核心网运营维护系统建设的架构和方案,并在此基础上提出5G核心网云网一体化运营维护组织架构建议,为5G核心网云网一体化运维工作提供参考。     

构建安全可信的5G网络

5G网络安全问题一直是业界关注的重点。从5G网络的技术架构出发,针对开放性、云架构、服务化控制模式技术特点,从无线网络、承载网络与核心网几个方面,分析5G网络的安全薄弱点。针对核心网安全薄弱点提出整体的应对策略,通过技术、网络组织和管理手段,加固5G网络的安全堤坝,为业务运营提供安全可信的网络。     

基于SDN的5G移动通信网络架构研究

随着5G移动通信时代的到来,5G通信技术也更加成熟。做为新一代移动通信技术,其网络架构对于通信网络的影响甚大。而基于SDN的5G移动通信技术因其诸多技术优势,成为当前5G移动通信发展的主流。基于SDN的5G移动通信网络架构的研究,对于移动通信技术的发展具有积极意义。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its