叠加电桥检测的加速度传感器的设计

This paper describes the design,simulation,processing and test result of a high sensitivity accelerometer based on the piezoresistive effect which uses an overlay bridge detection method.The structure of this accelerometer is supersymmetric "mass-beams".This accelerometer has 8 beams,where two varistors are put in the two ends.Four varistors compose a Wheatstone bridge and the output voltages of the 4 Wheatstone bridges have been superimposed as the final output voltage.The sensitivity of the accelerometer can be improved effectively by these clever methods. A simplified mathematical model has been created to analyze the mechanical properties of the sensor,then the finite element modeling and simulation have been used to verify the feasibility of the accelerometer.The results show that the sensitivity of the accelerometer is 1.1381 m V/g,which is about four times larger than that of the single bridge accelerometers and series bridge sensor.The bandwidth is 0-1000 Hz which is equal to that of the single bridge accelerometers and the series bridge sensor.The comparison reveals that the new overlay detection bridge method can improve the sensitivity of the sensor in the same bandwidth.Meanwhile,this method provides an effective method to improve the sensitivity of piezoresistive sensors.     

MEMS magnetic field sensor based on silicon bridge structure

A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested.The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge,and a ferromagnetic magnet adhered to the sensitivity diaphragm.When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm,producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor.Good agreeme...     

基于MEMS的压阻式超声传感器的设计与测试

A kind of piezoresistive ultrasonic sensor based on MEMS is proposed,which is composed of a membrane and two side beams.A simplified mathematical model has been established to analyze the mechanical properties of the sensor.On the basis of the theoretical analysis,the structural size and layout location of the piezoresistors are determined by simulation analysis.The boron-implanted piezoresistors located on membrane and side beams form a Wheatstone bridge to detect acoustic signal.The membrane-beam microstructure is fabricated integrally by MEMS manufacturing technology.Finally,this paper presents the experimental characterization of the ultrasonic sensor,validating the theoretical model used and the simulated model.The sensitivity reaches -116.2 dB(0 dB reference = 1 V/μbar,31 kHz),resonant frequency is 39.6 kHz,direction angle is 55°.     

Design and implementation of a hybrid circuit system for micro sensor signal processing

This paper covers a micro sensor analog signal processing circuit system(MASPS) chip with low power and a digital signal processing circuit board implementation including hardware connection and software design. Attention has been paid to incorporate the MASPS chip into the digital circuit board.The ultimate aim is to form a hybrid circuit used for mixed-signal processing,which can be applied to a micro sensor flow monitoring system.     

一种压阻式单片集成MEMS三轴加速度传感器

An integrated MEMS accelerometer has been designed and fabricated.The device,which is based on the piezoresistive effect,accomplishes the detection of three components of acceleration by using piezoresistors to compose three Wheatstone bridges that are sensitive to the only given orientation.The fabrication of the accelerometer is described,and the theory behind its operation developed.Experimental results on sensitivity,crossaxis-coupling degree,and linearity are presented.The sensitivity of X,Y and Z were 5.49 mV/g,5.12 mV/g and 4.82 mV/g,respectively;the nonlinearity of X,Y and Z were 0.01%,0.04% and 0.01%,respectively;the crossaxis-coupling factor of X axis to Y axis and Z axis are 0.119% and 2.26%;the cross-axis-coupling factor of Y axis to X axis and Z axis are 0.157%and 4.12%;the cross-axis-coupling factor of Z axis to X axis and Y axis are 0.511% and 0.938%.The measured performance indexes attain accurate vector-detection in practical applications, and even at a navigation level.In conclusion,the accelerometer is a highly integrated sensor.     

A low-power RF integrated circuit for implantable sensors

A low-power low-voltage analog signal processing circuit has been designed, fabricated, and tested. The circuit is capable of processing an analog sensor current and producing an ASK modulated digital signal with modulating signal frequency proportional to the sensor current level. An on-chip regulator has been included to stabilize the supply voltage received from an external RF power source. The circuit can operate with a power supply as low as 1 V and consumes only about 20 μW of power, which is therefore very suitable for implantable biomedical applications. The whole chip was laid out and fabricated in a 0.35 μm bulk CMOS technology. Experimental results show good agreement with the simulation results.     

Microelectronic neural bridge for signal regeneration and function rebuilding over two separate nerves

According to the feature of neural signals,a micro-electronic neural bridge(MENB)has been designed. It consists of two electrode arrays for neural signal detection and functional electrical stimulation(FES),and a microelectronic circuit for signal amplifying,processing,and FES driving.The core of the system is realized in 0.5-μm CMOS technology and used in animal experiments.A special experimental strategy has been designed to demonstrate the feasibility of the system.With the help of the MENB,the withdrawal reflex function of the left/right leg of one spinal toad has been rebuilt in the corresponding leg of another spinal toad.According to the coherence analysis between the source and regenerated neural signals,the controlled spinal toad’s sciatic nerve signal is delayed by 0.72 ms in relation to the sciatic nerve signal of the source spinal toad and the cross-correlation function reaches a value of 0.73.This shows that the regenerated signal is correlated with the source sciatic signal significantly and the neural activities involved in reflex function have been regenerated.The experiment demonstrates that the MENB is useful in rebuilding the neural function between nerves of different bodies.     

A new synchronization control circuit based on FPGA for the laser range-gated imaging system

Synchronization control is a kernel technique of the laser range-gated （LRG） imaging system which controls the synchronization of the pulsed laser and the ICCD camera directly. It can achieve range gating effectively and improve the resolution of image precisely. Conventional control circuits which are composed of discrete components have a poor performance of anti-interference, and the transmitting signal has a-bad delay which affects the conventional circuit＇s precision and stabilization seriously. To solve these problems, a range-gated synchronization control circuit is designed. This circuit, which takes the advantages of FPGA＇s high compact and flexibility, uses the phase-locking-loop （PLL） to multiply the global clock frequency. This design improves the precision and stabilization greatly, makes the precision up to a nanosecond level and provides a real-time selection of the values of pulse width and delays. Experiments results indicate that this circuit has a high precise and stable range-gated pulse.     

一种用于MEMS电容式加速度计的116dB动态范围CMOS读出电路

A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noise low-offset charge integrator is employed in this circuit to implement a capacitance-to-voltage converter and minimize the noise and offset. The application-specific integrated circuit （ASIC） is fabricated in a 0.5 /μm one-ploy three-metal CMOS process. The measured results of the proposed circuit show that the noise floor of the ASIC is -116 dBV, the sensitivity of the accelerometer is 66 mV/g with a nonlinearity of 0.5%. The chip occupies 3.5×2.5 mm2 and the current is 3.5 mA.     

60 V tolerance full symmetrical switch for battery monitor IC

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply.     

高灵敏加速度计微弱信号提取电路设计与测试

介绍了一种压阻式高灵敏加速度传感器微弱信号提取电路。该信号提取电路采用两级信号放大设计,两级之间设计有二阶巴特沃兹低通滤波器。本设计电路通过电路仿真软件进行仿真和外接加速度计测试。测试结果表明,该微弱信号检测提取电路可以很好地对高灵敏MEMS加速度计输出的信号进行放大,具体表现为可将传感器输出信号从毫伏级放大到伏级。采用这种电路设计的MEMS高灵敏加速度计输出信号具有良好的低频特性,可以满足高灵敏传感器宽频带测试的需要。     

Organic temperature sensors and organic analog-to-digital converters based on p-type and n-type organic transistors

We present an organic temperature detector that consists of an organic temperature sensor and an organic complementary read-out circuit. The temperature sensor is a Wheatstone bridge composed of temperature-sensitive polymer films and metal films. The read-out circuit receives an analog temperature signal from the temperature sensor and outputs a 1-bit digital signal that reflects whether the temperature has exceeded a threshold temperature or not. For more detailed read-out, detection of the temperature range the temperature sensor is within also demonstrated using an organic 2-bit analog-to-digital converter as a read-out circuit.     

压力传感器灵敏度电压非线性分析

实验发现压阻型压力传感器的压力输出信号与外加电压并不是线性关系,存在着灵敏度电压非线性。本文指出组成压阻型压力传感器电桥的电阻受温度、输入电压、压力的共同影响,在此基础上提出非线性扩散电阻的多维模型。依据此理论模型,对灵敏度电压非线性现象的成因进行了理论分析,并利用其中受电压控制的电压源及其扩展功能来模拟非线性扩散电阻在电路的等价作用,进而显示出压力传感器灵敏度电压非线性的成因。     

A new topology for a current-mode wheatstone bridge

This paper presents a new topology for a current-mode Wheatstone bridge (CMWB) that uses an operational floating current conveyor (OFCC) as a basic building block. The proposed CMWB has been analyzed, simulated, implemented, and experimentally tested. The experimental results verify that the proposed CMWB outperforms existing CMWBs in terms of accuracy. A new CMWB linearization technique based on OFCC has been proposed, used, analyzed, and tested. The advantages of the proposed CMWB are fourfold. Firstly, it reduces the number of sensing passive elements; i.e., we can use two resistors instead of four and get the same performance as the traditional voltage-mode implementation. Secondly, we can apply the superposition principle without adding signal conditioning circuitry; therefore, the addition of sensor effects is possible. Thirdly, it has a higher common-mode cancellation. Finally, the proposed CMWB topology offers a significant improvement in accuracy compared to other CMWBs.     

Bridge configurations in piezoresistive two-axis accelerometers

In piezoresistive two-axis accelerometers with two proof masses suspended by cantilever beams, there are generally many ways to configure the Wheatstone bridges. The configurations are different both with respect to functionality and performance. The main distinction is between bridges that contain resistors belonging to both proof masses, and the one bridge that doesn’t. We compare the different bridge configurations by analytical calculations of bridge non-linearity, robustness towards manufacturing variations and electronic noise. We consider accelerometers where the ratio between the sensitivity to acceleration normal and parallel to the chip plane vary over a wide range. For numerical examples we use representative values for p-type silicon. The performance of the configuration with one bridge connected to each proof mass is superior to those that combine resistors belonging to different proof masses.     

Enhanced printed temperature sensors on flexible substrate

In this paper we present the development of enhanced printed temperature sensors on large area flexible substrates. The process flow is a fully screen printed technology that uses exclusively solution-processed materials. These Screen printed temperature sensors are based on resistive pastes integrated in a Wheatstone bridge circuit. Substrate is a commercial Poly Ethylene Naphtalate (PEN) with a thickness of 125 µm. Functional temperature sensors are demonstrated and characterized with good electrical properties, showing a good sensitivity of 0.06 V/°C at V_in=4.8 V. This sensitivity is enhanced by the annealing and the O₂ plasma treatment. Based on this temperature sensor, we have developed a demonstrator for human body temperature detection.     

A novel SOI MOSFET electrostatic field sensor

A novel low temperature solid state electric field sensor is demonstrated as a promising sensor. The sensor is a type of constant voltage Wheatstone bridge whose resistors are four direct gate SOI MOSFET devices. It is demonstrated in theory that the output voltage signal is proportional to the electric field E, the temperature drift is about zero when the temperature is in the range from 200 to 400 K, and the doping concentration is in the range from 1×1014 to 1 × 1016 cm-3. The experiment results indicate that the resolution of the sensor is about 3.27 mV for a 1000 V/m electric field at 300 K, and the voltage drift by an amount is about 47 V/m field signal when the degree temperature is in the range from 300 to 370 K, which is much smaller than the current drift of a single MOSFET which is about 10000 V/m field signal.     

一种新型MOSFET静电场传感器

本文提出了一种非常有发展前途的低温漂固态电场传感器。此传感器是一种恒压惠斯顿电桥,它的电阻是由四个直接栅极SOI MOSFET器件。理论上证明这种传感器的输出信号电压与测量电场成正比,温度漂移等于零。实验结果表明,在300K温度下,传感器的分辨率为3.27 mV/KV/m,大气环境下的温度漂移相当于47V/m的电场,其远小于大气温度下相当于10,000V/m的电流漂移。