模糊层次分析法在广播电视信息安全保障评价 指标体系中的应用研究

 建设国家信息安全保障评价指标体系,可以为决策者提供有关国家信息安全的基本状况.文章简要阐述国家信息安全保障体系中的广播电视分系统的信息安全评价指标体系的基本情况,同时介绍了广播电视信息安全保障指标体系中技术系统各级指标的构成原则和评价方法,着重论述了基于群体专家判断矩阵的情况下,模糊层次分析法在确定各级指标权重时的应用,并以广播电视技术系统为例给出了应用研究的实例.     

信息安全产品安全保证量化评估方法研究

CC标准进行信息安全产品测评时,传统评估方法使用二值逻辑表示评价结果,只能定性评估,不能体现安全保证量的差异.本文提出依据保护轮廓构建评估框架的方法;将评估员对组件的评价定义为三角模糊数的形式;提出底线折衷法综合各组件评价得出TOE(评估对象)安全保证的量化表示.最后,通过实例表明这是一种CC标准框架下的可操作和较为合理的信息安全产品测评方法.     

云计算背景下的信息安全问题研究

信息安全是云计算系统正常应用的前提和基础,为了解决当前云计算背景下信息安全存在的问题,提高云计算系统的安全性,提出一种基于层次分析法和模糊理论相结合的云计算背景下信息安全评价策略。首先,针对当前云计算背景下信息安全评价指标体系的高冗余特性,采用相关分析对指标进行处理,提高指标的独立性;然后,采用层次分析法构建多层次评价指标体系,并采用模糊理论对计算背景下信息安全等级进行评价;最后,应用于具体云计算系统信息安全分析中,结果表明,该评价策略可以对云计算系统的安全状态进行客观估计,为云计算背景下信息安全风险决策提供可靠的信息。     

模糊综合评价法的整体安全评估

为提高民航重要信息系统等级保护测评的准确性,提出模糊综合评价法的整体安全评估。该方法通过确定影响整体测评结果的10个单元测评项,建立整体安全指标评价体系,得到评价指标集,划分五个评价等级,运用粗糙集对单元评价指标进行权重系数调整,再利用可拓关联函数得到隶属度矩阵,将评价指标的权重和各个评价指标对评价等级的隶属度模糊合成,得到模糊评价结果。实验结果表明,该方法采用粗糙集权重系数调整,将10个单元评价指标更好地为整体评估提供支撑,实验结果与常权等测评结果对比,更符合民航重要信息系统的现状,具有更好的应用性。     

基于AHP的学员信息安全素养评价研究

根据学员的特点,结合信息安全素养评价指标体系的建立原则,构建了学员信息安全素养评价指标体系,该体系分为四个一级指标、八个二级指标和三十个三级指标。体系建立后,运用层次决策分析方法 (AHP)得出了各指标权重,为开展学员信息安全素养评价提供了有力的支撑。     

基于模糊层次分析法的大学生综合素质评价研究

为了避免现有层次分析评价方法在大学生综合素质评价过程中存在不足的目的;采用模糊层次分析方法,做了一个对大学生综合素质进行定性和定量的综合多因素评价实验;获得了评价指标的层次结构模型,以及大学生综合素质定性和定量评价的结果;得到采用模糊层次分析法能够避免不足,方便有效地解决大学生综合素质评价问题的结论;具有简单、科学、使用方便的特点。     

基于AHP和模糊评判的雷达系统状态综合评价

雷达系统状态评价问题涉及因素多,且各因素大都具有模糊不确定性。在确立评价指标体系的基础上,文中提出了基于层次分析法和模糊评判理论的雷达系统状态评价方法。针对多因素判断矩阵难以满足一致性难题,采用传递矩阵实现了多组决策数据的一致性处理,从而获得指标的综合权值。针对因素指标类型的差异性,提出指标劣化程度的度量方法,并利用所构造的三角隶属函数对指标状态进行了模糊划分,最大综合隶属度即为对应雷达系统所处状态。最后,通过实例验证了该方法的合理性和有效性。     

基于模糊一致矩阵的模糊综合评价法测评隐性知识存量——实证分析高职教师隐性知识存量测评

隐性知识存量测评是对当前学校考核评估教师教科研能力仅测评教师显性知识的完善。文章基于模糊一致矩阵的模糊综合评价法,研究教师隐性知识存量测评,包括：教师的隐性知识分类、建立评价问题指标体系,运用模糊一致矩阵配置指标权重、选择评价相关集、建立模糊综合评价模型,以及测评隐性知识存量,并实证分析高职教师隐性知识存量的测评过程。     

战术互联网信息安全风险评价指标体系研究

战术互联网是战术通信系统的骨干网络,其信息安全问题已成为影响中国军队机动通信保障能力的重要因素。通过增加初级指标项对传统德尔菲法进行改进,构建了战术互联网信息安全风险评价指标体系,运用层次分析法确定了风险因素的指标权重,为制定战术互联网风险控制策略提供了量化依据。     

软件质量模糊综合评价模型与实例分析

质量评价是软件质量管理的重要内容,针对软件质量评价指标难以量化且具有不确定性的特点,运用模糊综合评价法进行研究。首先,将软件质量评价指标体系归纳为6个一级指标,24个二级指标,并用递阶层次分析结构模型表示;接着,研究评价工作准备,包括建立因素集、建立评价集和建立权重集;然后,建立数学模型,包括单因素模糊评价、一级模糊综合评价、多级模糊综合评价和确定评价结果;最后,按照数学模型建立步骤对具体软件进行质量评价。研究内容对于加强软件项目管理、提高软件质量具有重要意义。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm