16×16位高速低功耗并行乘法器的实现

基于0.6μm双阱CMOS工艺模型,实现了一种高速低功耗16×16位并行乘法器。采用传输管逻辑设计电路结构,获得了低功耗的电路性能。采用改进的低功耗、快速Booth编码电路结构和4-2压缩器电路结构,它在2.5V工作电压下,运算时间达到7.18ns,平均功耗(100MHz)为9.45mW。     

单电子晶体管的I-V特性数学模型及逻辑应用

基于正统单电子理论，提出了单电子晶体管的I-V特性数学算法改进模型。该模型的优点是：考虑了背景电荷的影响，可由实际物理参数直接获得，支持双栅极工作，便于逻辑电路的分析。研究了背景电荷和各物理参数对I-V特性及跨导的影响，讨论了双栅极单电子晶体管的逻辑应用：简化了“异或”逻辑电路，改进了二叉判别图电路的逻辑单元。     

单电子晶体管的Ⅰ-Ⅴ特性数学模型及逻辑应用

基于正统单电子理论,提出了单电子晶体管的Ⅰ-Ⅴ特性数学算法改进模型.该模型的优点是考虑了背景电荷的影响,可由实际物理参数直接获得,支持双栅极工作,便于逻辑电路的分析.研究了背景电荷和各物理参数对Ⅰ-Ⅴ特性及跨导的影响,讨论了双栅极单电子晶体管的逻辑应用简化了"异或"逻辑电路,改进了二叉判别图电路的逻辑单元.     

基于Booth\CSD混合编码的模 乘法器的设计

在余数系统的设计中,模加法器和模乘法器的设计处于核心地位,尤其是模乘法器的性能,是衡量余数系统系能的主要标志之一。文中先推导出Booth编码下的模 乘法器设计的算法,然后针对Booth编码模乘法器设计中译码电路复杂的问题,提出了一种基于Booth/ CSD混合编码的模乘法器设计方法,基于Booth/CSD编码的模乘法器部分积的位宽相对传统的Booth编码乘法器而言,减少了50%;经试验证明,与传统的基-Booth编码的模乘法器相比这种混合编码的模乘法器的速度提高了5%,面积减少24.7%。     

基于主方程法单电子晶体管的Verilog-A行为模型

 基于单电子晶体管的主方程算法,在简化Lientschnig的单电子晶体管模型基础上,建立了基于Verilog-A的单电子晶体管行为描述模型,并利用Cadence Spectre 仿真器对该模型进行了验证.通过单电子晶体管逻辑电路的设计和仿真,表明该模型具有合理的精确度,且速度快,为单电子晶体管电路及混合电路的仿真提供了一种有效的方法.     

基于Booth\CSD混合编码的模2~n+1乘法器的设计

在余数系统的设计中,模加法器和模乘法器的设计处于核心地位,尤其是模乘法器的性能,是衡量余数系统系能的主要标志之一。文中先推导出Booth编码下的模2n+1乘法器设计的算法,然后针对Booth编码模乘法器设计中译码电路复杂的问题,提出了一种基于Booth/CSD混合编码的模乘法器设计方法,基于Booth/CSD编码的模乘法器部分积的位宽相对传统的Booth编码乘法器而言,减少了50%;经试验证明,与传统的基-Booth编码的模乘法器相比这种混合编码的模乘法器的速度提高了5%,面积减少24.7%。     

极高速多元逻辑电路(DYL)线性“与或”门的研究

本文对多元逻辑电路的主要基本单元线性“与或”门进行了进一步的分析和研究。提出了一种JFET偏置结构,推导了平均传播延迟的分析表达式,建立了晶体管增益与电路参数的关系方程,分析了电路在级联时低电平升高的物理原因。本研究工作采用泡发射极工艺。典型的平均级延迟为0.3ns,功耗延迟积为2.1pJ。实验结果表明,多元逻辑电路是一种有前途的极高速双极型电路。     

磁芯-晶体管大电流整形放大电路

在脉冲电路和用磁芯元件组成的逻辑电路中,经常需要脉冲整形以及供出大电流脉冲以驱动各种负载.在这种情况下,采用矩形磁滞回线的铁氧体磁芯和小功率的面结型晶体管所构成的矩形磁芯-晶体管电路较为理想.矩形磁芯-晶体管电路是一种晶体管式的间歇振荡器电路,因而它也有着饱和及非饱和式两大类.前者的主要特点是输出功率大,晶体管功耗小;后者的主要特点是高速,因而可以运用于较高工作     

CMOS数字集成电路：分析与设计（第三版）（中文版）

内容简介：本书集中讲述CMOS数字集成电路，反映现代技术的发展水平，提供电路设计的最新资料。本书共有15章。前半部分详细讨论MOS晶体管相关特性和工作原理、基本反相器电路设计、组合逻辑电路及时序逻辑电路的结构与工作原理。后半部分介绍应用于先进VLSI芯片设计的动态逻辑电路，先进的半导体存储电路，低功耗MCMOS逻辑电路，双极性晶体管基本原理和BiCMOS数字电路设计，芯片的I／O设计，电路的可制造性设计和可测试性设计等问题。     

双极逻辑电路的发展动向

1972年度国际固体电路会议上,资本主义各国的一些主要半导体厂家在会上介绍了双极逻辑电路的进展情况,介绍了一种研制亚毫微秒的双极电路,有些文章还介绍了速度-功耗乘积小于1微微焦耳的双极逻辑电路,这表明高速的电路并不影响功率。此外,还报导了一些简化电路的单个晶体管存储器单元的方法,它们在双极集成电路的发展上具有一定的代表性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.