基于混合云架构的全媒体应用技术平台设计

本文基于中国国际广播电台全媒体业务需求,设计了全媒体应用技术平台,构建了基于混合云的全媒体业务“采制播存管”一体化工作流程.设计具备媒体专业服务特性的平台服务层,提供整合媒体专业化处理工具的基础服务能力和承载用户管理、产品定义以及业务结算的运营支撑能力;设计符合国际台全媒体业务端到端工作流程的软件应用服务层,提供涵盖融合媒体汇聚系统、全媒体文稿系统、全媒体媒资系统和全媒体发布系统在内的应用系统集.平台服务层为软件应用服务层提供了基础服务支撑,支持软件应用的快速开发和灵活部署.     

基于OWL-S的Web服务组合的验证研究

为保证基于OWL-S的Web服务组合的正确性和可靠性，验证组合服务的交互协议．采用一种三层体系结构思想，即以OWLS来组合服务，以GA模型为中间模型，以Promela模型为验证模型．设计和实现了服务组合模型到GA模型的转化，并将GA模型转化为Promela模型，最后利用SPIN工具完成验证。由于采用了中间模型．该方法具有极好的灵活性和可扩展性，并且较好地解决了Web服务的特征给模型验证带来挑战的问题。     

thGridJob:面向空间信息网格的SOA结构任务框架

文章提出了一种基于SOA结构的任务框架来支持空间信息网格(SIG)中的长时间处理服务并将其命名为thGridJob。thGridJob采用三层结构,为用户和任务开发者提供了不同的编程接口。用户可以通过一系列的Web服务操作来提交和控制任务实例,任务开发者可以使用Java语言、脚本语言和工作流描述语言来开发任务实例。文章还采用Java语言开发设计和实现了一个thGridJob实现以及一个基于Web的用户界面,为SIG用户和任务开发者服务。     

中国地震减灾网格试验床仿真网格平台的构建

研究构建中国地震减灾网格试验床仿真网格平台的关键技术.基于OGSA、GT3和HLA体系结构,提出了仿真网格平台的一种解决方案,并具体实现了该方案中的仿真资源和仿真网格特征服务.     

面向服务的军事信息系统集成框架与应用研究

军事信息系统的综合集成是提高军队一体化联合作战能力的基础和关键.文章采用面向服务的思想研究军事信息系统的综合集成,为弥补Web Service协议规范在军事信息系统综合集成中的不足,引入了服务扩展层和服务组合层,提出了基于服务的军事信息系统集成框架,并对原型系统进行了设计实现.     

基于通用协议转换接口的企业服务总线技术

企业服务总线是SOA架构下的信息传输平台,在企业应用集成中拥有很重要的位置.目前新的企业应用要集成到企业服务总线上时,需要对不同通信协议的应用配置相应的适配器来实现应用与企业服务总线间的信息交互.文中提供了一种通用协议转换接口,它可以将不同协议进行快速的转换,使得企业服务总线具有更好的扩展性和兼容性,能够方便快捷地进行系统应用的整合.     

OGSA开放网格服务体系结构研究

网格计算是信息技术的又一次革命,它的出现为分布式资源的共享和服务提供了一种新的方式。在网格计算的发展过程中,先后主要出现了两种体系结构“五层沙漏结构”和OGSA开放网格体系结构。主要介绍了OGSA体系结构并对它和Web服务进行了一个比较。     

基于多层次的网格体系结构及关键技术研究

基于多层次网络结构,以"服务"为中心,构建了从信息获取、集成、处理到应用的完整的7层体系结构,提出了从数据库层、算法工具层、分析逻辑层到应用系统层4层资源管理逻辑模型,着重研究资源管理、资源交易等关键技术,实现重型机械领域的资源共享和信息服务。     

基于区分服务的无线传感器网络跨层QoS体系结构

结合无线传感器网络自身特点,提出一种三层可计算QoS指标体系;在此基础上,根据各种应用不同QoS需求将应用分为四类,设计出一种基于区分服务的无线传感器网络跨层QoS体系结构(CQAW),并给出了参考实现框架.     

网络信息安全技术2

2 网络安全协议 2.1 OSI和TCP/IP网络参考模型开放系统互连(OSI)参考模型是一个多层通信协议,最初由国际标准化组织(ISO)开发,1983年正式成为国际标准.OSI模型将网络分为7层,在各层上分别实现不同的功能.7层从上到下分别为应用层、表示层、会话层、传输层、网络层、数据链路层和物理层.模型中每一层只与上下两层直接通信.高层协议偏重于处理用户服务和各种应用请求,低层协议偏重于处理实际的信息传输.分层的目的在于把各种特定的功能分离开来,使各层的设计和测试相互独立,每一层只使用下层提供的服务而不必理会下层服务是如何实现的.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.