Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region（DDR） impact avalanche transit time（IMPATT） devices operating at both millimetre-wave（mm-wave） and terahertz（THz） frequencies. A rigorous large-signal（L-S） simulation based on the non-sinusoidal voltage excitation（NSVE） model developed earlier by the authors is used in this study. At first,a simulation study based on avalanche response time reveals that the upper cut-off frequency for DDR diamond IMPATTs is 1.5 THz, while the same for conventional DDR Si IMPATTs is much smaller, i.e. 0.5 THz. The L-S simulationresultsshowthattheDDRdiamondIMPATTdevicedeliversapeakRFpowerof7.79Wwithan18.17%conversion efficiency at 94 GHz; while at 1.5 THz, the peak power output and conversion efficiency decrease to6.19mWand8.17%respectively,taking50%voltagemodulation.AcomparativestudyofDDRIMPATTsbasedon diamond and Si shows that the former excels over the later as regards high frequency and high power performance at both mm-wave and THz frequency bands. The effect of band to band tunneling on the L-S properties of DDR diamond and Si IMPATTs has also been studied at different mm-wave and THz frequencies.     

Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

The authors have carried out the large-signal characterization of silicon-based double-drift region(DDR) impact avalanche transit time(IMPATT) devices designed to operate up to 0.5 THz using a large-signal simulation method developed by the authors based on non-sinusoidal voltage excitation.The effect of band-to-band tunneling as well as parasitic series resistance on the large-signal properties of DDR Si IMPATTs have also been studied at different mm-wave and THz frequencies.Large-signal simulation results show that DDR Si IMPATT is capable of delivering peak RF power of 633.69mW with 7.95% conversion efficiency at 94GHz for 50% voltage modulation,whereas peak RF power output and efficiency fall to 81.08 mW and 2.01% respectively at 0.5 THz for same voltage modulation.The simulation results are compared with the experimental results and are found to be in close agreement.     

Potentials of GaP as millimeter wave IMPATT diode with reference to Si, GaAs and GaN

This paper presents the simulation results of DC,small-signal and noise properties of GaP based Double Drift Region( DDR) Impact Avalanche Transit Time( IMPATT) diodes. In simulation study we have considered the flat DDR structures of IMPATT diode based on GaP,GaAs,Si and GaN( wurtzite,wz) material. The diodes are designed to operate at the millimeter window frequencies of 94 GHz and 220 GHz. The simulation results of these diodes reveal GaP is a promising material for IMPATT applications based on DDR structure with high break down voltage( V_B) as compared to Si and GaAs IMPATTs. It is also encouraging to worth note GaP base IMPATT diode shows a better output power density of 4. 9 × 10~9 W/m~2 as compared to Si and GaAs based IMPATT diode. But IMPATT diode based on GaN( wz) displays large values of break down voltage,efficiency and power density as compared to Si,GaAs and GaP IMPATTs.     

Progress of Terahertz Devices Based on Graphene

Graphene is a one-atom-thick planar sheet of sp2-hybridized orbital bonded honeycomb carbon crystal. Its gapless and linear energy spectra of electrons and holes lead to the unique carrier transport and optical properties, such as giant carrier mobility and broadband flat optical response. As a novel material, graphene has been regarded to be extremely suitable and competent for the development of terahertz （THz） optical devices. In this paper, the fundamental electronic and optic properties of graphene are described. Based on the energy band structure and light transmittance properties of graphene, many novel graphene based THz devices have been proposed, including modulator, generator, detector, and imaging device. This progress has been reviewed. Future research directions of the graphene devices for THz applications are also proposed.     

Mathematical Model of Fiber Optic Temperature Sensor Based on Optic Absorption and Experiment Testing

On the basis of analysis on the temperature monitoring methods for high voltage devices, a new type of fiber optic sensor structure with reference channel is given.And the operation principle of fiber optic sensor is analysed at large based on the absorption of semiconductor chip.The mathematical model of both devices and the whole system are also given.It is proved by the experiment that this mathematical model is reliable.     

Fabrication of GaAs/Si Heterostructures and Their Photoelectric Properties

Fabrication of GaAs/Si heterostructures and their photoelectric properties are investigated by Raman, photoluminescence and Hall-effect measurements. The crystallinity of GaAs epilayers grown on Si substrate is significantly affected by the substrate orientation and the growth method. The photoelectric properties of GaAs epilayers grown on Si （211） substrates deposited by using a two-step growth method are improved. These results indicate that GaAs epilayersgrownonSi （100） andSi （211） substrates by using two step growth method are promising for potential applications in high-speed and high-frequency photoelectric devices.     

Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature

We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDR diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency.     

Tunable Terahertz Source Based on Optics Pumped Nonlinear Crystals

Recent progresses about optical pumped tunable terahertz （THz） sources are interviewed, including THz parametric oscillation （TPO） and difference frequency generation （DFG）. We develop high efficiency and high power surface-emitted TPO, as well as DFG with nonlinear crystals. A novel scheme for the high efficiency DFG source based on the Cherenkov phase-matching technology is comprehensively investigated in both bulk crystals. The widely tunable optical THz radiation is also researched based on the organic nonlinear 4-N,N-dimethylamino-4＇-N＇- methylstilbazolium 2,4,6-trimethylbenzenesulfonate （DSTMS） crystal.     

Beam Pattern Design and Performance Analyses for Circular Array with Spherical Baffles

The influence of a rigid spherical baffle on the response of a uniform circular microphone array （UCA） is analyzed and two eigen-beam beamforming arrays are designed in the eigen-beam subspaee derived from the soundfield decomposition. Expressions of white noise gain （WNG） and directivity index （DI） are derived for the designed arrays. Performance analyses are carried out for the designed arrays and compared between those of the delay-and-sum beamforming array using UCA with and without a rigid sphere. Computer simulations demonstrate that the designed arrays have frequency-independent directivity with the cost of reduced robustness at low frequency band. The delay-and-sum beamforming array has constant WNG at all frequencies, while its directivity of which is reduced at low frequency band. The rigid sphere can improve the robustness for all the arrays.     

Microstructure Functional Devices—Effectively Manipulate Terahertz Waves

Terahertz （THz） technology promises important applications including imaging, spectroscopy, and communications. However, one of limitations at present for advancing THz applications is the lack of efficient devices to manipulate THz waves. Here, our recent important progresses in THz functional devices based on artificial microstructures, such as photonic crystal, metamaterial, and plasmonic structures, have been reviewed in this paper, involving the THz modulator, isolator, and sensor. These THz microstructure functional devices exhibit great promising potential in THz application systems.     

功率FET和二极管大信号建模方法

Under a large signal drive level,a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes.A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices.The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.     

Optical Noninvasive Diagnostic of Semiconductor Devices by Using Laser Beam Probe

The optical noninvasive diagnostic of characteristic of silicon semiconductor de-vices by using a InGaAsP/InP semiconductor laser as an optical probe is reported.The princi-ple of experimental method is based on the dependence of the optical refractive index on the carrier charge density in the active region of devices and detection of variation of refractive index by two laser beam interferometric techniques.     

Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates

The growth characteristics and crystalline quality of thick (100) CdTe-epitaxial layers grown on (100) GaAs and (100) GaAs/Si substrates in a metal-organic vapor-phase epitaxy (MOVPE) system for possible applications in x-ray imaging detectors were investigated. High-crystalline-quality epitaxial layers of thickness greater than 100 μm could be readily obtained on both types of substrates. The full width at half maximum (FWHM) values of the x-ray double-crystal rocking curve (DCRC) decreased rapidly with increasing layer thickness, and remained around 50–70 arcsec for layers thicker than 30 μm on both types of substrates. Photoluminescence (PL) measurement showed high-intensity excitonic emission with very small defect-related peaks from both types of epilayers. Stress analysis carried out by performing PL as a function of layer thickness showed the layers were strained and a small amount of residual stress, compressive in CdTe/GaAs and tensile in CdTe/GaAs/Si, remained even in the thick layers. Furthermore, the resistivity of the layers on the GaAs substrate was found to be lower than that of layers on GaAs/Si possibly because of the difference of the activation of incorporated impurity from the substrates because of the different kinds of stress existing on them. A heterojunction diode was then fabricated by growing a CdTe epilayer on an n⁺-GaAs substrate, which exhibited a good rectification property with a low value of reverse-bias leakage current even at high applied biases.     

Numerical Spectral Model Based on BPM for Er-doped Waveguide Amplifiers

A spectral numerical analysis method to analyze the Er-doped waveguide amplifiers（EDWA） in wavelength division multiplexing is presented. This model is based on finite difference beam propagation method modified by Douglas scheme, which can efficiently reduce the truncation error and time consumption. By superposing the Lorentzian function for the experimental curves, the spectral properties of EDWA can be investigated. Results show that the pump efficiency of EDWA pumped at 980 nm is higher than that at 1 480 nm. Meanwhile, by rationally increasing the pump length and the erbium concentration, larger signal gains can be acquired. Taking account of the up-conversion and cross-relaxation effects of cooperation, the spectrum analysis of highly doped EDWA is carried out over a wider frequency band.     

GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy

Molecular beam epitaxy growth of a bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been systemically investigated.The influence of growth temperature and the InAs deposition of both layers on the optical properties and morphologies of the bilayer quantum dot（BQD） structures is discussed.By optimizing the growth parameters,InAs BQD emission at 1.436μm at room temperature with a narrower FWHM of 27 meV was demonstrated.The density of QDs in the second layer is around 9×10⁹ to 1.4×10¹⁰ cm^-2. The BQD structure provides a useful way to extend the emission wavelength of GaAs-based material for quantum functional devices.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching,the optimum phase-matching wave bands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and InP are 0.95～1.38 mm and 0.7～0.96 mm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Light-emitting diodes based on colloidal silicon quantum dots

Colloidal silicon quantum dots (Si QDs) hold great promise for the development of printed Si electronics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for optoelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes (LEDs) play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD surface and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.     

Ⅲ–Ⅴ compound materials and lasers on silicon

Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility.Breakthroughs have been made in silicon-based integrated lasers over the past few decades.Here we review three main methods of integration ofⅢ–Ⅴ materials on Si,namely direct growth,bonding,and selectivearea hetero-epitaxy.TheⅢ–Ⅴmaterials we introduced mainly include materials such as GaAs and InP.The lasers are mainly lasers of related communication bands.We also introduced the advantages and challenges of the three methods.     

Prospects of β-SiC Based IMPATT Oscillator for Application in THz Communication and Growth of β-SiC p-n Junction on Ge Modified Si <100> Substrate to Realize THz IMPATTs

The prospects of p+ n n+ cubic Silicon Carbide (3C-SiC/ß-SiC) based IMPATT diode as a potential solid-state Terahertz source is studied for the first time through a modified generalized simulation scheme. The simulation predicts that the device is capable of generating a RF power output of 63.0 W at 0.33 THz with an efficiency of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies clearly establish the potential of 3C-SiC as a base semiconductor material for high-power THz IMPATT device. Based on the simulation results an attempt has been made to fabricate β- SiC based IMPATT devices in THz region. Single crystalline, epitaxial 3C-SiC films are deposited on silicon (Si) <100> substrates by Rapid Thermal Chemical Vapour Deposition (RTPCVD) at a temperature as low as 800 0C using a single precursor methylsilane, which contains Si and C atoms in the same molecule. No initial surface carbonization step is required in this method. A p-n junction with n-type doping conc. of 4 x 10^24 m-3 (which is similar to the simulated design data) has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper. It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness.     

Orthogonally polarized RF optical single sideband generation with integrated ring resonators

We review recent work on narrowband orthogonally polarized optical RF single sideband generators as well as dualchannel equalization,both based on high-Q integrated ring resonators.The devices operate in the optical telecommunications C-band and enable RF operation over a range of either fixed or thermally tuneable frequencies.They operate via TE/TM mode birefringence in the resonator.We achieve a very large dynamic tuning range of over 55 dB for both the optical carrier-to-sideband ratio and the dual-channel RF equalization for both the fixed and tunable devices.