一种高双折射低损耗大负色散光子晶体光纤的设计

设计了一种新型光子晶体光纤结构,该光纤包层包含六个由不同形状空气孔组成的轴对称的三角晶格,并在中间沿x轴引入一排大小不同的椭圆空气孔,实现了高双折射、低限制性损耗和大负色散特性。构建了该光子晶体光纤的有限元模型,基于该模型研究了中心两个空气孔的偏转角对LP₀₁模和LP₁₁模的模场分布、双折射系数、限制性损耗和色散系数的影响。研究表明,在偏转角α=90°时该型光纤具有最优性能,即LP₀₁模可在波长为1550nm处获得高达3.618×10-2的双折射、仅为1.999×10-14dB/m的限制性损耗以及低至-764ps/(nm·km)的大负色散,其综合传输特性优于现有典型光子晶体光纤。     

超低损耗高双折射空芯反谐振太赫兹光子晶体光纤

本文提出了一种以环烯烃共聚物（Cyclic Olefin Copolymer, COC）为基底的超低损耗高双折射空芯反谐振太赫兹光子晶体光纤,该光纤的包层由两组（共六个）无节点嵌套管组成。采用时域有限差分法（Finite Difference Time Domain method, FDTD）结合完美匹配层（Perfectly Matched Layer, PML）边界条件对其导波特性进行分析。仿真结果表明,在0.8~1.35 THz范围内,总传输损耗小于0.1 dB/m,双折射大于2.12×10^-5,色散在±0.027 ps/THz/cm。在1.12 THz处,最低总传输损耗仅为0.543×10^-2 dB/m,双折射值为2.06×10^-4。同时,分析了该光纤的弯曲性能,表明在y方向,当弯曲半径超过19 cm时,弯曲损耗小于0.1 dB/m,具有良好的弯曲性能。     

高双折射类椭圆纤芯光子晶体光纤设计与分析

为了改善传统光纤灵敏度低、损耗高和非线性效应不易控制的问题,设计一种新型高双折射、低损耗和高非线性的类椭圆纤芯光子晶体光纤(PCF)结构。基于全矢量有限元法,通过COMSOL分析研究了光纤端面的空气孔直径和位置对双折射、限制损耗、模场特性和非线性等特性的影响。仿真结果表明:所设计的PCF结构在波长为1.550μm处的双折射率达1.918×10^-3,x和y极化偏振方向的限制损耗分别为Lcx=1.6×10^-3dB/km和Lcy=8.0×10^-4dB/km,非线性系数达到9.4 km^-1W^-1,且满足单模传输,实现了高质量、高精度的光信号传输与传感。     

2μm波段高双折射微结构磁流体光纤特性研究

设计了一种新型微结构光纤,光纤包层中具有相互垂直的两对椭圆空气孔,即两个较大的椭圆空气孔和两个较小的填充磁流体的椭圆孔,四个孔包围形成一个类长方形的纤芯。采用有限元法仿真分析了它在2μm波段的双折射特性和损耗特性,并通过优化得到最佳光纤结构参数。仿真结果表明,该光纤结构的模式双折射可以达到10-3,限制损耗低于10~(-11) dB·m~(-1),同时实现了高双折射和低限制损耗的设计目标。通过改变外界磁场可以改变磁流体材料的折射率,进而改变光纤的有效折射率,实现对光纤中所传输的偏振光相位的连续调谐。     

高双折射高非线性低损耗八边形光子晶体光纤特性

为了同时实现高双折射高非线性并得到低损耗,设计一种在光纤纤芯附近引入椭圆形空气孔和圆形空气孔组成的新型优化的八边形光子晶体光纤。采用全矢量有限元法结合各向异性完美匹配层,对该光纤的有效面积、非线性、双折射和损耗特性进行了模拟分析。数值模拟结果表明,通过选择适当的结构参数,在波长1.55 m处,该光纤具有高双折射高达B=1.6810-2,比普通光纤高两个数量级,高非线性系数为=60 W-1km-1和低损为0.6 dB/km。这种具有高双折射高非线性系数的光纤可用于光通信、偏振敏感的各种设备和产生超连续普等领域。     

一种新结构的高双折射光子晶体光纤

设计了一种新型的高双折射光子晶体光纤(PCF)。在光纤包层中引入2种不同尺寸的空气孔,使光纤只具有二重对称性,呈现出较高的双折射,在短波长区,双折射值比普通的保偏光纤的要高得多。当2种孔径比大于1时,相当于在光纤中引入了W型有效折射率曲线分布,因此在长波长区基模会截止。采用改进的超格子全矢量模型与平面波法相结合对光纤的光特性进行了分析,结果表明,在波长1 310 nm处,其模式双折射为1.8×10-3;在1.4μm~1.6μm的波长范围内,只有基模的1个偏振态可在光纤中传输。该新型PCF能够实现单偏振单模运转,可以从根本上消除偏振串扰和偏振模色散。     

新型六角点阵光子晶体光纤的高双折射低损耗特性

设计了一种新型六角点阵光子晶体光纤,该光纤在波长1 350～1 800nm范围内呈现高双折射低损耗大负色散。采用全矢量有限元法结合各向异性完美匹配层边界条件,对其双折射、约束损耗、色散、非线性和模场等特性进行了数值模拟。研究表明,新设计的光纤对模场有很强的约束能力,在波长1 550nm处双折射高达2.08×10-2,模约束损耗接近10-1 dB·km-1,负色散值高达-910ps·km-1·nm-1,模场面积高达2.67μm2,非线性系数仅有0.043m-1·W-1。该光纤将在光纤激光器、光纤放大器、光滤波器和光纤传感系统方面有重要的应用。     

椭圆孔正方形点阵聚合物光子晶体光纤偏振特性

以聚合物为基材,设计了一种单模零走离参数的高双折射光子晶体光纤,该光纤具有椭圆孔正方形点阵,基于全矢量平面波方法,对其传输模场和偏振特性进行了数值模拟。结果发现,与传统的光子晶体光纤相比,该光纤具有更大的模式双折射和走离参数,当增长光纤结构参数椭圆孔长短轴之比η时,双折射明显增强并高达3.5×10-2,走离参数在低频区出现零走离点,这为在该光纤中即保持高双折射又实现零走离单模运转提供了可能。     

光纤双折射对光纤环保偏能力影响的实验研究

为了研究光纤双折射对陀螺光纤环保偏能力的影响,选用三种不同型号的光纤采用相同的绕制方法制作相同规格的光纤环。采用白光干涉仪测试光纤环的偏振耦合分布,并利用光纤环两端尾纤与白光干涉仪尾纤的熔点引起的偏振耦合干涉峰计算绕环光纤的双折射。通过不同光纤环测试结果的比较,分析绕环光纤双折射对光纤环保偏能力的影响。测试结果表明,三种绕环光纤的双折射分别为7.47×10－4、6.36×10－4、5.78×10－4,对应的三只光纤环的整体偏振耦合幅值分别为－74.79 dB、－70.06 dB、－64.97 dB。选取了相同对应位置的5个大耦合点进行偏振耦合幅值的统计,三只光纤环平均偏振耦合幅值分别为－57.85 dB、－49.85 dB、－44.49 dB。实验结果表明采用高双折射的保偏光纤有利于提高光纤环的整体保偏能力,且高双折射光纤具有较强的抵御外界应力影响的能力。     

混合双包层高双折射光子晶体光纤的特性

提出了一种新型的混合双包层结构的光子晶体光纤。利用多极法对光纤基模的模场分布、双折射、限制损耗及色散特性等进行了数值模拟,通过调节包层空气孔的孔径大小可以有效地控制光纤的双折射和限制损耗特性。结果发现:新设计的光纤具有高双折射低限制损耗特性,光纤结构参数为=1.0 m,d1=d2=d3=0.8 m时,该光纤在C波段（1.53~1.565 m）及L波段（1.57~1.62 m）呈现负色散及负色散斜率。在波长为1.55 m处,双折射高达10-2,限制损耗小于10-5 dB/m。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.