一种适用于10/100MHz Base TX以太网的新型发射电路

提出了一种新结构发射电路,适用于10/100MHz Base TX以太网,兼容10MHz Base TX和100MHz Base TX两种工作模式,并能在这两种模式间自由切换.电路采用了波形整形,斜率控制,复用线驱动器等技术,使所有参数符合IEEE802.3标准.芯片在SMIC的0.18μm CMOS工艺流片测试,电源电压为3.3V.     

EPL—N2010激光打印机

采用166.7MHz高性能RISC处理器,支持A3幅面打印,装备了10Base T/100Base TX内置网卡。     

适用于10/100Base-T以太网的低抖动频率综合器

计了一种用于10/100BaseT以太网收发器的频率综合器电路．该电路自适应工作在10和100Mbps两种模式下,并能自由切换．电路采用cascode电流源、差分对称负载延迟单元等优化结构,使时钟输出具有良好特性,且能兼具DLL功能,同时满足发送电路上升下降斜率控制和时钟恢复电路对于多相时钟的需要,避免额外的功耗和面积．在一定测试环境下,晶振的cycle-cycle抖动σ约为25ps,输出时钟分频后的25MHz测试时钟信号的σ仅为22ps．测试结果表明,时钟发生电路具有良好的工艺稳定性和较强的抑制噪声能力,满足发送和接收电路对于时钟性能的要求．芯片采用SMIC 0.35μm的标准CMOS工艺,电源电压为3.3V．     

单片VHF／UHF发射器TX4915原理及应用

TX4915是HiMARK技术公司推出的新型的低噪声AM／ASK发射器芯片,芯片内集成有基准振荡器,VCO（压控振荡器）,相位检波器,可预置比例分频器,高频发射电路等。该片可工作在100MHz－90MHzVHF／UHF频带,完成低噪声AM／ASK发射。文中给出了TX4915的结构、原理、特性及应用电路。     

手机维修·接收电路篇

手机的接收电路是指从天线到I/Q基带信号之间的电路,主要对接收的带有信息的射频调制信号进行滤波、放大、降频和解调,以输出RX I/Q信号。接收电路主要由以下部分组成。一、天线双工器天线开关是收发共用,主要起两个作用:一是完成RX、TX双工切换,因为GSM系统是时分多址,所以RX和TX不能同时工作在一个时隙,需要通过控制信号完成RX和TX的分离,控制信号来自CPU的RX-EN(接收启动)和TX-EN(发射启动),或由它们转换而得的信号;二是完成双频或三频切换,接收时完成GSM(935～960MHz)、DCS(1805～1880MHz)、PCS(1930～1990MHz)切换,发射时完成GSM(880～915MHz)、DCS(1710～1785MHz)、PCS(1850～1910MHz)切换。天线开关连接接收滤波RX-FL和发射滤波TX-FL的目的:RX工作时,防止TX信号或其它无用信号进入RX,滤除噪波、杂波,获得纯净的RX信号;TX工作时,获得准确的TX信号,防止     

MJ-2701CB机改为10米业余电台

前些时候我们买了几台MJ-2701CB机,原机工作频率26.965-27.405MHz,40个信道,AM/FM两种工作模式,频合器的IC用的是LC7185,接收时(RX)VCO压控振荡器的频率是16.270-16.710MHz.发射时(TX)VCO的频率是13.4825-13.7025MHz,经二倍频放大后的26.965-27.405MHz,要使该机能在29.600MHz左右的10米业余段工作还需进行改频。     

100Base-TX接口指标的测试和分析

随着通信业的发展，百兆以太接口已普遍应用在各个领域，100Base—TX接口是基于4B／5B信号编码和使用两对5类双绞线作为传输介质数据率为100Mbps的接口，其传输距离可达100米。为了保证各种不同设备间的良好互通，接口物理特性的一致性和兼容性就显得特别重要，因此在《IEEE Std802．3—2000》标准中规定了接口的物理特性、指标以及测试方法。本文结合作者在以太网领域多年的测试经验，介绍了100BASE—TX接口指标测试方法和测试仪器的选用，并将使用TektroniX公司CSA7404通信信号分析仪进行测试所获得的图形供大家参考。     

一种多输出压控电流差分跨导放大器的设计

提出了一种具有Z端复制输出、跨导可由电压调节的电流差分跨导放大器（MO-VCCDTA）。该电路采用低压高性能电流镜作为电流输入级,降低了消耗的电压余度、输入阻抗与传输误差;利用MOS管的线性组合,实现了可由电压控制跨导的跨导放大级。采用SMIC 0.18um CMOS工艺进行仿真,结果表明：在 0.9V电源电压下,电路的线性输入范围为-100uA-100uA,输入电阻约为10Ω;跨导值可在0.34mS-1.56mS内线性变化,Iz/Ii、Ix/Ii的-3dB带宽分别为131MHz、88MHz;电路总功耗为2.8mW。最后,仅采用两个该模块和两个接地电容得到了电流模式通用二阶滤波器。     

PHILIPS提供高速网路解决方案

多媒体结合INTERNET提供用户即时讯息,PHILIPS推出高速网路晶片NE830Q100:100 Base TX Transceiver,SCB2C168:lO/100 Controller,解决ENDEAR USER,以最快的时间上INTERNET连网,取得资料。     

MJ-2701CB机改为10米业余电台

前些时候我们买了几台MJ-2701CB机,原机工作频率26.965～27.405MHz,40个信道,AM/FM两种工作模式,频合器的IC用的是LC7185,接收时(RX)VC0压控振荡器的频率是16.270～16.710MHz,发射时(TX)VC0的频率是13.4825～1 3.7025MHz,经二倍频放大后的26.965～27.405MHz,要使该机能在29.600MHz左右的10米业余段工作还需进行改频. 根据MJ-2701CB机的原理图及机器结构的实际情况,我们决定用以下方案进行改制,该机为10米业余电台.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its