低相噪捷变频毫米波频率源的研制

基于整数和小数分频锁相原理,采用双锁相源+混频方案,实现了一种可用于毫米波雷达系统的低相噪、小步进、捷变频毫米波频率源。实测结果表明:该频率源产品在31.0~32.5GHz频带范围内,相位噪声可达-90dBc/Hz@1kHz,跳频时间小于10μs,跳频步进100kHz,最低杂散抑制低于-60dBc。     

一种S波段跳频源的设计

为了某项目设计一款频率在2-3GHz宽带跳频源,频率间隔为1MHz,跳频点数为1001点。该跳频源要求相位噪声小于-100dBc @1kHz,杂散优于60dB。分析指标和软件仿真计算,采用HITTITE公司的HMC830锁相芯片来实现该设计方案。采用HITTITE公司的PLL仿真设计软件对环路滤波器进行优化设计后应用到实际电路中,使得该芯片在-55℃到+85℃均可稳定工作。通过外接串口通信控制模块,实现频率的跳变。最终该设计的实物测试相位噪声、杂散指标均优于目标值。测试得到该频率源相位噪声可达到-100dBc/Hz@1kHz,杂散指标能够达到-70dB,具有工程应用价值     

Ku波段低相噪锁相介质振荡器

应用取样锁相技术对Ku波段低相噪锁相介质振荡器进行了研究,对取样锁相技术的工作原理和电路特性进行了分析,阐述了取样锁相环路的设计过程.对制成的实物进行了测试和调试,取得了预期的相位噪声指标.实验结果表明,该取样锁相源的频率为17GHz,输出功率≥10dBm,杂波抑制比≥70dBc,相位噪声-103dBc/Hz@1kHz, -107dBc/Hz@10kHz, -110dBc/Hz@100kHz, -128dBc/Hz@1MHz.     

7.13~7.37GHz宽带锁相跳频源的设计与实现

设计了一种采用电荷泵锁相技术的7.13~7.37GHz宽带跳频信号源,采用复杂可编程逻辑器件(CPLD)控制电荷泵锁相环(CPPLL)频综芯片ADF4108产生跳频信号,跳频带宽高达240 MHz,输出功率约10dBm,电平波动为0.7dB,杂散抑制<-70dBc,输出端采用六阶微带低通滤波器进行带外谐波抑制,二次谐波抑制<-60dBc,传输速率快,电路模块结构紧凑。实验结果表明,所设计的跳频宽带信号源具有快跳变,低相噪,低杂散,高可靠性及高稳定度等优点。     

锁相介质振荡器

锁相介质振荡器采用锁相稳频技术将介质振荡器的频率稳定在参考频率上。研制的一种X波段锁相介质振荡器,得到的性能指标如下：频率8.44GHz;相位噪声≤-80dBc/Hz@10kHz、≤-110dB/Hz@100kHz;输出功率≥10dBm;杂波≤-75dBc、谐波≤-30dBc。     

采用PLL技术的合成频率源设计

介绍分频锁相频率合成技术.通过对锁相环工作过程及相位噪声等的基本原理的分析,采用PLL技术成功设计了1.8 GHz锁相频率源.在该锁相源中分频鉴相器采用ADI公司的ADF4118,VCO采用M/A-COM公司的ML081100-01850,低通环路采用三阶RC低通滤波器.其相位噪声为-75dBc/kHz、杂散抑制为-85dBc.实验测试获得了较好的技术指标,能满足现代移动通信C网和G网射频子系统对本振源的要求.     

基于高次谐波体声波谐振器的微波跳频源研究

频率信号源已经成为现代通信系统的核心部件,是决定系统性能的关键设备。采用MEMS 工艺实验制备了Al-ZnO-Au-Sapphire 结构的高次谐波体声波谐振器(HBAR),基于HBAR 的高Q值、多模谐振特性,研究实现了高性能的微波点频源及压控形式的跳频信号源,相对于传统的晶体振荡器和DDS+PLL 的跳频源技术,电路设计简单,所需硬件数量极少,相位噪声低。测试结果显示:微波点频源输出频率2.962GHz,输出功率-5.15dBm,相位噪声达到了-112dBc/Hz@10kHz,频率稳定度小于等于8.9×10-5;跳频信号源跳频带宽56 MHz,步进频率为14 MHz,压控灵敏度为14MHz/1.8V,频率转换时间短,在导航、通信系统中将得到广泛应用。     

L/S/C波段低相噪、单片锁相频率源实现

介绍一种在20 mm×20 mm PCB上实现L/S/C波段频率源的方法,当频率最高达4 820 MHz时,相位噪声达到-100 dBc/Hz@10 kHz。当步进设为2 MHz,环路带宽为100 kHz时,杂波抑制＞40 dBc,跳频时间＜200 μs;环路带宽为40 kHz时,杂波抑制＞60 dBc,跳频时间＜600 μs。可以应用于一些低端的接收机和校正源上,或是对杂散抑制要求不高的射频通信中。     

一种应用于多频接收机的宽带频率综合器

采用0.18µm 1P6M CMOS工艺实现了一种应用于多频接收机的整数分频频率综合器。该频率综合器为接收机提供频率分别为2.57GHz, 2.52GHz, 2.4GHz 和 2.25GHz的本振信号。为了覆盖要求的频点,其宽带压控振荡器同时采用了可变电容阵列和可变电感阵列。经测试,压控振荡器的频率调谐范围为1.76GHz~2.59GHz。对于频率为2.57GHz, 2.52GHz, 2.4GHz 和 2.25GHz的载波,在1MHz频偏处,相位噪声分别为-122.13dBc/Hz、-122.19dBc/Hz、-121.8dBc/Hz和-121.05dBc/Hz。其带内相位噪声分别为-80.09dBc/Hz、-80.29dBc/Hz、-83.05dBc/Hz 和-86.38dBc/Hz。包括驱动电路在内的芯片功耗约为70mW。芯片面积为1.5mm×1mm。     

一种超宽带捷变频源的研制

本文介绍了一种超宽带捷变频源的设计与实现过程，该频率源采用直接模拟合成方式，通过合理的频率划分和高性能的开关滤波组件技术实现了超宽带、捷变频、低相噪、低杂散的优异性能，并给出了最终测试结果。实测结果表明该频率源在 Ku 波段 6GHz 带宽范围内具有杂散抑制优于-70dBc，相位噪声优于-103dBc/Hz@1kHz，跳频时间小于 200ns 等的性能。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-