基于AT89C52下智能化电镀设备控制系统设计

基于AT89C52下智能化电镀设备控制系统是以AT89C52单片机为基本内核,利用串口通信技术实现电镀设备数据采集和控制手段智能化的智能控制系统.设计对电镀设备的温度、液位和位置等参数的检测、处理以及控制的智能处理方式进行了说明,并在重点阐述系统硬件构成的基础上,对如何利用串口通行技术实现单片机的数据传递进行了简单的介绍.     

基于单片机的单总线多点温度测控系统

本课题主要介绍基于AT89C52单片机和DS18B20数字温度传感器的多点温度采集系统.该系统利用AT89C52单片机分别采集各个温度点的温度,实现温度显示、报警等功能.它以AT89C52单片机为主控制芯片,采用数字温度传感器DS18B20实现多路温度的检测,测量精度可以达到0.5℃.该系统采用了LCD1602A液晶显示模块,LCD1602A作为显示器,形象直观的显示测出的温度值.基于AT89C52单片机的单总线多点温度采集系统具有硬件组成简单、多点温度检测、读数方便、精度高、测温范围广等特点,在实际工程中得到广泛应用.     

基于单片机的温度控制系统设计

本设计以AT89C52单片机为控制核心,进行温度采集,信息显示和执行器控制。AT89C52是SST在美国推出的高度可靠的小扇区FLASH微控制器。具有72KB的超级闪存和1KB的RAM。RAM的进一步扩展可以满足嵌入式系统的操作系统操作条件。通过使用AT89C52单片机和新型测温装置设计多点温度控制加热控制系统,并根据房间中每个点的温度实时控制加热系统,从而实现房间舒适度和供暖经济性。     

一种新型的USB通信技术研究

为了提高单片机与计算机之间的数据传输速度,设计了基于CH372芯片的USB通信技术来实现单片机与计算机之间的数据通信.采用CH372芯片与单片机AT89C52配合的方法设计了单片机端的硬件电路,开发了CH372芯片基于汇编语言平台的单片机端的数据收发程序和基于Visual Basic语言平台的计算机端的命令、数据收发程序.试验结果表明,该系统设计能够很好地实现单片机与计算机之间的数据传输.     

基于单片机的智能照明控制系统设计

该设计是用单片机AT89C2051联合AT89S52制作的夜用照明灯智能控制器,利用单片机的端口分别控制LCD1602标准时钟系统、可控硅和蜂鸣器,实现智能照明系统。由于该系统采用单片机对环境光亮度进行测试,并计算相关数据,进行判断,因此电路能随着季节的变化自动调节每天的开关灯的时间,从而减少电能的损耗。     

基于红外反射式光电传感器的智能循迹小车

介绍了一种智能寻迹小车的设计与实现。基于红外反射式光电传感器的寻迹原理,采用AT89C52单片机为核心控制器件,通过红外传感器检测路面信息,单片机获取路面信息后,进行分析、处理,最后控制步进电机调节转向和转速。实验表明：该系统抗干扰能力强、电路结构简单,能够准确实现小车沿给定的黑线快速、平稳行驶。     

基于AT89C52的嵌入式网络监控系统设计

针对网络监控设备不断向小型化、智能化发展,文中提出了一种结合单片机AT89C52与RTL8019网卡的新型嵌入式网络监控系统.该系统以TCP/IP协议为基础,单片机通过ISA总线与网卡通信来实现网络数据包的收发.实验证明该系统可以可靠地实现TCP/IP协议,并对网络进行有效的控制.     

一种低成本的病床呼叫系统

基于STC89C52单片机设计了一款低成本病床呼叫系统。使用单片机控制语音合成芯片和液晶显示模块,通过ISD1760的FT直通操作模式录制语音信息,然后利用ISD1760的SPI模式接口与单片机的I/O端口连接通信,实现单片机对语音芯片的控制。同时加入留言功能,使呼叫系统更加人性化。样机测试表明,呼叫系统的稳定性高,解决了落后地区乡镇医院中病人得到及时护理的问题。     

基于串口通信的单片机全双工通信系统研究

介绍了单片机串行口工作原理,设计了AT89C51与PC机串行通信系统,利用电平转换器件实现了单片机与PC间的串口通信,进而利用串口通信方式设计了双AT89C51单片机串行全双工通信系统,采用中断方式实现了A/B单片机数据互发互收,最终实现串行口的全双工双机通信,并使用Protues仿真软件进行了系统仿真。     

一种智能识别电话机的设计

介绍了一种智能识别新型电话机的设计,以AT89C2051单片机为呼叫智能识别核心,通过单片机判断后控制拨号电路,实现呼叫智能识别功能.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its