Performance Analysis for MPEG‐4 Video Codec Based on On‐Chip Network

In this paper, we present a performance analysis for an MPEG‐4 video codec based on the on‐chip network communication architecture. The existing on‐chip buses of system‐on‐a‐chip (SoC) have some limitation on data traffic bandwidth since a large number of silicon IPs share the bus. An on‐chip network is introduced to solve the problem of on‐chip buses, in which the concept of a computer network is applied to the communication architecture of SoC. We compared the performance of the MPEG‐4 video codec based on the on‐chip network and Advanced Micro‐controller Bus Architecture (AMBA) on‐chip bus. Experimental results show that the performance of the MPEG‐4 video codec based on the on‐chip network is improved over 50% compared to the design based on a multi‐layer AMBA bus.     

3G手机对PCB行业的挑战

3G手机时代的来临给PCB的制造技术带来了巨大的挑战,文章介绍了3G手机对PCB行业的影响、PCB高密度化的要求、CCL高性能化的要求、PCB加工技术的要求。     

关于中国联通扩大EDGE业务覆盖的考量

基于EDGE技术原理的分析,通过调研中国联通EDGE业务在现网中的覆盖情况,从业务启动条件、系统升级需求、覆盖区域设计、频率规划等方面详细介绍了网络建设中的典型问题。此外,还分析了业务启动后对网络的影响,最后进一步阐述了EDGE业务的开展建议。     

面向OLAP的高效海量数据存储技术研究与实现

文章在分析了OLAP大规模海量多维数据特点的基础上,针对当前一般规模关系数据库处理海量多维数据能力的不足,通过使用数据库分区技术和并行磁盘组技术,设计并实现了一种高效的、面向OLAP应用的数据存储管理结构。并针对传统查询优化器对于大规模海量数据统计信息更新不及时的问题,设计了一种基于分区技术的统计方法。实验证明,该设计可以对百TB级的多维海量文本数据进行有效的管理。     

基于口令认证的密钥交换协议的安全性分析

在串空间理论模型引入了描述DH问题的方法以及分析猜测攻击的攻击者能力,对基于口令认证的密钥交换协议的安全性进行了形式化分析。提出一个对DH-EKE协议的简化,并证明了该协议的安全性:口令的秘密性,认证性,以及会话密钥的秘密性.根据分析给出基于口令认证的密钥交换协议抵抗猜测攻击的基本条件.将分析方法应用到基于口令的三方密钥交换协议上,给出单纯基于口令进行密钥交换协议的安全性需要满足的一个必要条件.     

基于椭圆曲线加密体制的实现

使用椭圆曲线作为公钥密码体制的基础,是定义在有限域上椭圆曲线上的点构成的阿贝尔群,并且使定义其上的离散对数问题的求解非常困难。在选取适合密码系统的安全椭圆曲线和基点算法的基础上,给出了两种明文在椭圆曲线上表示方法的算法以及基于这两种方法的椭圆曲线加密体制。     

束源杂质引发的MBE HgCdTe表面缺陷

研究了利用GaAs作为衬底的HgCdTe MBE薄膜的表面缺陷，发现其中一类缺陷与Hg源中杂质有关。采用SEM对这类缺陷进行正面和横截面的观察，并采用EDX对其正面和横截面进行成分分析。并设计了两个实验：其一，在CdTe／GaAs衬底上，低温下用Hg源照射20min，再在其上继续高温生长CdTe；其二，在CdTe／GaAs衬底上，一直用Hg源照射下高温生长CdTe。两个实验后CdTe表面都出现与HgCdTe表面相比在形状和分布上类似的表面缺陷，采用光学显微镜和SEM对CdTe表面缺陷进行了观察，通过CdTe表面缺陷和HgCdTe表面缺陷的比较，我们证实了这类表面缺陷的成核起源于Hg源中杂质。     

Ge-on-Si approaches to the detection of near-infrared light

We review our recent results on Ge-based near-infrared photodetectors grown on silicon. We fabricated metal-semiconductor-metal photodetectors based on epitaxial pure-Ge grown on silicon by chemical vapor deposition. Material characterization and device performances are illustrated and discussed. Exploiting a novel approach based on evaporation of polycrystalline-Ge on silicon, we also realized efficient near-infrared photodiodes with good speed and sensitivity. Finally, multiple-element devices were designed, fabricated, and tested, such as a voltage-tunable wavelength-selective photodetector based on a SiGe superlattice and a linear array of 16 photodetectors in poly-Ge on Si     

OTN技术组网及应用研究

根据OTN技术特点和实际工程组网经验,对OTN技术的组网及OTN技术与现有网络的关系进行了探讨,并重点探讨了传输网面临的问题,就如何利用OTN技术解决这些问题提出了基本思路。     

Multiple microstrip lines on a multilayered cylindrical dielectricsubstrate on perfectly conducting wedge

The quasi-TEM characteristics of a class of cylindrical microstrip lines are rigorously determined. The class of microstrip lines considered consists of multiple infinitesimally thin strips on a multilayered dielectric substrate on a perfectly conducting wedge. Expressions for the potential distribution inside and outside the dielectric substrate, charge distribution on the strips, and capacitance matrix of the microstrip lines are derived. The problems of a microstrip line on a cylindrically capped wedge and on a cylindrical dielectric substrate on perfectly conducting core are also considered as special cases. Sample numerical results based on the derived expressions are given and discussed     

手机紧急定位实现方案建议

基于3GPP紧急定位标准流程,为实现隐私鉴权提出了优化建议,并在核心网不支持3GPP流程时,提出了基于信令分析控制设备实现紧急定位的方案。     

硬盘盘片结构特点及NiP基板CMP研究

分析了硬盘盘片的结构特点及硬盘基板的作用。在超净实验室中,通过调节氧化剂的含量,对硬盘基板进行了化学机械抛光。分析了不同氧化剂的含量对硬盘基板抛光速率的影响。对抛光后的硬盘基板进行了检测。抛光后的硬盘基板的粗糙度基本达到厂家的要求。对有可能造成硬盘基板划伤的原因进行了分析研究,为下一步解决划伤问题的实验提供了理论依据。     

Stress measurements of fibers and preforms

The authors point out the formation mechanism of axial stress, describes the method and the apparatus used for measurements, and presents the results obtained during a study of loss reduction on trapezoidal core 1.55-μm dispersion-shifted fibers manufactured by the MCVD technique. It is concluded that the stress measurements on fiber are less accurate than those on preform (experimental dispersion reaches 15% instead of 5%). The various observations made from measurements on preform show that the axial stress is related to the index profile and that the core axial stress increases with the GeO₂ content. The measurements performed on fiber show that the level of stress is linearly dependent on the drawing tension and that the stress profile is related to the glass-transition temperature of the different materials. Furthermore, this method of stress measurement is complementary to the more standard index profile measurement on fiber or on preform     

CISPR 22:2008中1 GHz以上辐射骚扰测试的场地要求

从计量角度阐述电磁兼容辐射骚扰测试标准的可比对性和经济性,依照可比对性原则,分析CISPR22：2008关于1GHz频段以上辐射骚扰测试对于场地布置中存在的受试设备离地高度、地面所铺设的吸波材料的高度,以及辐射发射限值适用条件等一些有争议的问题,认为只要场地满足了S-VSWR的测试要求,则地面铺设的吸波材料的高度等并不需要做出统一规定;相比之下,更重要的是要确保接收天线的主瓣能够覆盖EUT,并且详细记录测试现场条件。     

运营商富通信终端技术及应用研究

富通信技术凭借其增强型的通信体验以及社区交互等特点,结合智能终端本身提供的能力,大大丰富了在智能终端上实现的应用,并为运营商提供了融合发展的某种契机。本文从富通信技术角度出发,描述了在智能终端上实现富通信的业务场景,分析了智能终端实现富通信的关键技术以及富通信功能植入对终端的要求,基于此提出了运营商实现富通信的发展策略,并展望其后续发展。     

Limitations to and solutions for optical loss in optical backplanes

In this paper, recent literature on the discussion on high-speed backplanes with optical, electrical, and mixed solutions, as well as on polymer-waveguide systems suitable for implementation on printed circuit boards (PCBs), is reviewed from the point of view of their optical losses. The reevaluation of the optical power budget for realistic high-speed optical polymer-waveguide links on backplanes showed that signal amplification is necessary to boost the signal, which resulted in an additional literature review on advances in optical amplifiers based on silicon bench technology available. Finally, a concept study of an active optical waveguide amplifier device, based on planar optical waveguide amplifiers and semiconductor optical amplifiers, was performed. The amplification device can be flip-chip mounted on the backplane to compensate for optical losses due to signal routing, which increases the overall degree of freedom in waveguide routing on high-density interconnects for backplanes. The hybrid concept design guarantees compatibility with the processes of the PCB industry.     

基于IMS的核心网演进分析及探讨

提出基于IMS的核心网演进的3种思路,针对建议的思路给出了核心网演进步骤,并从现有网络IP化、建设IMS网络、用户数据库融合、IMS主导核心网、全IMS目标核心网等方面进行了分析和探讨。     

雷电斜向放电通道电磁场建模及计算

基于传输线模型,通过将柱坐标系进行旋转变换,建立了斜向放电通道电磁场模型;采用脉冲函数加双指数函数作为通道底部电流,从垂直放电通道电磁场的表达式中推导出斜向放电通道电磁场的计算公式;基于斜向放电通道电磁场模型,研究了不同角度对不同场区地表回击电磁场的影响,认为雷电放电通道越倾斜,雷电流对地面电磁场的影响就越明显。研究了不同回击速度对不同场区地表回击电磁场的影响,结果表明回击速度对电磁场的影响较为明显。     

基于蓝宝石纳米图形衬底上氮化镓生长的研究

利用两步生长法在蓝宝石纳米图形衬底（NPSS）上生长得到高质量的氮化镓薄膜。通过XRD和SEM对薄膜质量的表征和研究发现,为得到高质量的氮化镓（GaN）薄膜,在NPSS上生长时得到的最优缓冲层厚度为15nm,而在微米级尺寸的图形衬底（MPSS）上得到的最优缓冲层厚度远大于15nm。同时,在NPSS上生长氮化镓薄膜的过程中观察到一个有趣的现象,即GaN在NPSS上生长的初始阶段,氮化镓晶粒主要在图形之间的平面区域生长,极少量的GaN在衬底图形的侧面上聚集生长。这一有趣的现象明显不同于GaN在MPSS上的生长过程。接着,又在NPSS上生长了GaN基LED结构,并对其光电性能进行了研究。     

Si基中短波双色HgCdTe材料生长及表征

报道了碲镉汞(MCT)分子束外延(MBE)的最新研究进展。基于现有Si基中波、短波HgCdTe材料工艺基础,开发获得了Si基中短波双色HgCdTe材料的生长工艺。使用反射式高能电子衍射分析在线监测生长过程,优化了Si基中短波双色HgCdTe材料生长工艺。获得了具有良好晶体质量的Si基中短波双色HgCdTe材料。