一种低功耗的双尾电流动态比较器

提出了一种新型技术来降低动态比较器的功耗。预放大器的输出直接与锁存节点连接。在没有明显增大锁存节点负载电容的基础上,在隐藏的静态电流通路上设计2个开关晶体管来避免静态功耗,实现了低功耗。基于TSMC 0.18 μm CMOS工艺,对提出的比较器进行仿真,并与其他三种比较器进行对比。仿真结果表明,在1.8 V供电电压、频率为100 MHz、共模电压为0.9 V的条件下,该比较器的功耗为26.13 μW,相比传统双尾动态比较器,功耗降低了49%。延时为219 ps,失调电压为6.3 mV。该比较器适用于低功耗设计领域。     

一种CMOS动态闩锁电压比较器的优化设计

提出了一种应用于Pipeline ADC和Sigma-Delta ADC中改进的动态闩锁电压比较器。采用0.35μm CMOS N阱工艺设计,工作于2.5V单电源电压。通过详细的分析和优化,使比较器具有较小的输入失调电压和踢回噪声,仿真结果表明它的输入失调电压分布范围为28.6mV,最高工作频率200MHz、功耗230μW。     

一种GHz高频应用的低失调高速CMOS动态比较器

提出了一种由改进的前置差分运算放大器和差分式锁存器构成的高频、高速、低失调电压的动态比较器。前置预差分放大器采用PMOS交叉互连的负载结构,提升差模增益,进而减小输入失调。后置输出级锁存器采用差分双尾电流源抑制共模噪声,改善输出级失调,并加速比较过程。采用一个时钟控制的开关晶体管替代传统复位模块,优化版图面积,在锁存器中构建正反馈回路,加速了比较信号的复位和输出建立过程。采用65 nm/1.2 V标准CMOS工艺完成电路设计,结合Cadence Spectre工艺角和蒙特卡洛仿真分析对该动态比较器的延时、失调电压和功耗特性进行评估。结果表明,在1.2 V电源电压和1 GHz采样时钟控制下,平均功耗为117.1 μW;最差SS工艺角对应的最大输出延迟仅为153.4 ps;1 000次蒙特卡罗仿真求得的平均失调电压低至1.53 mV。与其他比较器相比,该动态比较器的电压失调和高速延时等参数有明显优势。     

基于0.6μm CMOS工艺应用在高速ADC工作频率300MHz的高速电压比较器设计

高速比较器是高速模数转换电路的关键环节.本文综合考虑了比较器的传输延时、失调电压等因素,分析了前置放大器和比较锁存电路的结构,在此基础上设计了一个基于CSMC 0.6 μm CMOS工艺、适合于高速ADC的高速电压比较器.仿真结果表明:比较器工作频率为300 MHz以上,工作电流约为3.3 mA,上升延时为993 ps,下降延时为932 ps,失调电压约为7.46 mV.该比较器可以在高速模数转换电路中应用.     

一种低回踢噪声低失调高频CMOS比较器

动态比较器在高速高精度模数转换器中至关重要，针对失调和回踢噪声等指标，提出了一种可有效抑制回踢噪声的低失调电压高频动态比较器。所提出的比较器在预放大器中增加一对交叉耦合的MOS电容，中和输出节点的寄生电容，从而抑制回踢噪声，稳定高频输入信号；将锁存器的单尾电流源改为差分双尾源结构，同时跨接一个钟控MOS开关，有效实现了失调电压的抑制以及复位和再生的加速。采用TSMC 40nm/0.9V 标准CMOS工艺和Cadence Spectre工具，对比较器的输入、失调、延迟和功耗特性进行分析仿真。结果表明：在1GHz高频采样时钟频率和输入差模电压50mV的条件下，回踢噪声和失调电压分别减小到22.297mV和11μV，两种非理想特性被显著抑制；整体比较器的延时时间仅为0.061ns，功耗为23.3μW，在高速高频Flash ADC、并行ADC等应用方向具有明显优势。     

一种低失调CMOS比较器设计

本文在研究各种比较器失调消除技术基础上,提出了一种用于ADC电路的高速高精度比较器失调消除技术.该比较器由主动复位和共模箝位的预放大器和输出锁存器构成,通过负反馈自适应调整比较器输入失调电压,降低了开关电容沟道电荷注入和时钟馈通对比较器精度的影响.仿真结果表明,在Chartered 0.35μm COMS工艺下,电源电压3.3V,调整后的比较器失调误差为34μV,比较速率100MHz.     

基于单电子晶体管的动态全加器电路设计

基于单电子晶体管的I-V特性,运用CMOS动态电路的设计思想,提出了一种基于单电子晶体管的全加器动态电路,利用SPICE对设计的电路进行了仿真验证,分析了电荷分享问题.相对于静态互补逻辑电路的设计方法,基于单电子晶体管的动态逻辑电路不仅克服了单电子晶体管固有的电压增益低的缺点,而且器件数目也大幅减少.多栅SET的使用可以减少电荷分享问题对动态电路的影响.     

一款10位逐次逼近型模数转换器设计

基于0.18μm CMOS工艺设计一款10位逐次逼近型模数转换器(SAR ADC),采用了阻容混合型的数模转换器(DAC)以实现面积与性能上的折衷,高位采用温度码设计以提高DAC的线性度。采用了失调电压较小的静态比较器结构,通过在DAC和比较器之间加入了高增益的前置放大器来消除比较器失调电压对ADC性能所带来的影响。仿真结果表明:在电源电压为2.8 V、采样速率为116 k S/s、输入信号频率约为57 k Hz、满摆幅为0.8 V的情况下,ADC有效位数(ENOB)达9.99位,信噪失真比(SNDR)为61.9 d B,无杂散动态范围(SFDR)为75.57 d B,总功耗约为1 m W,面积为0.069 mm~2。     

工作时钟1GHz超高速电压比较器设计

超高速模数转换电路是现代高速通信和信号处理电路中的重要组成部分,而超高速比较器的设计是超高速模数转换器设计中的关键环节.文中通过综合考虑比较器的传输延时和失调电压等因素,讨论了超高速比较器的设计方法,并在基于1.8V电源电压、TSMC0.18μm CMOS工艺下设计了一个工作时钟为1GHz的超高速电压比较器,经过芯片测试,证明该比较器可以在1GHz时钟下稳定工作,失调电压仅为70μV.该比较器可以用于超高速模数/数模转换器的设计.     

一种用于数字功放的低功耗宽输入电压比较器

设计了一种适用于数字功率放大器应用的全差分低功耗宽输入CMOS电压比较器.采用TSMC 0.18μm/3.3V CMOS工艺模型,用Cadence软件进行模拟仿真,比较器低频增益81.2dB,输入共模电压范围1.4~3.3V,整个电路的静态功耗仅248.6μW.运用该结构的比较器具有较低的失调电压,大幅度提高了比较器的精度;较宽的输入共模电压范围及低功耗,可用于数字功放等高性能模拟IP模块的设计.     

低功耗高精度的电压比较器设计

设计了一款用于实现10位精度逐次逼近型模数转换器(SAR ADC)的电压比较器,该比较器采用高速高精度比较器结构并进行了优化,在高速度、低功耗锁存器的基础上加预放大级以提高比较精度,加RS触发器优化处理比较器的输出信号。同时,采用失调校准技术消除失调,预放大级采用共源共栅结构抑制回程噪声,最终获得了高精度和较低的功耗。仿真结果表明:在Chartered 0.35μm 2P4MCMOS工艺下,时钟频率5 MHz,电源电压3.3 V,分辨率达0.1 mV,平均功耗约为0.45 mW,芯片测试结果表明比较器满足了SAR ADC的要求。     

Gain and offset analysis of comparator using the bisection theorem and a balanced method

Gain and offset represent two important measures to determine the accuracy of a comparator. Thus, analysis on these parameters is very important as they offer designers better understanding of the circuit and allow exploring trade-offs during design. In this paper, two methods were presented to derive a set of design equations that describe the gain, sensitivity, offset, and systematic mismatches observed in typical comparator circuits. A three-stage, fast complementary metal-oxide semiconductor (CMOS) comparator structure is analysed and simulated in order to validate the proposed methods. A 0.13 μm CMOS technology is used for simulations with 1.5 V supply voltage. Bisection theorem was used for gain and sensitivity analysis. Simulation results show that high gain improvement can be possible by using the design equations. The input offset voltage, due to mismatch in the width of the metal oxide semiconductor field-effect transistors (MOSFET) (W) and mismatches in the threshold voltages of the N and P type MOSFETs (V_THN, V_THP), is analysed using a proposed balanced method. The same comparator structure is used for the input offset voltage analysis. Simulations show that an offset improvement can be achieved following the design equations found through the proposed method.     

Analyses of Static and Dynamic Random Offset Voltages in Dynamic Comparators

When mismatches are present in a dynamic comparator, due to internal positive feedback and transient response, it is always challenging to analytically predict the input-referred random offset voltages since the operating points of transistors are time varying. In this paper, a novel balanced method is proposed to facilitate the evaluation of operating points of transistors in a dynamic comparator. Thus, it becomes possible to obtain an explicit expression for offset voltage in dynamic comparators. We include two types of mismatches in the model: 1) static offset voltages from the mismatch in $muhbox{C}_{rm ox}$ and threshold voltage ${rm V}_{rm th}$ and 2) dynamic offset voltage due to the mismatch in the parasitic capacitances. From the analytical models, designers can obtain an intuition about the main contributors to offset and also fully explore the tradeoffs in dynamic comparator design, such as offset voltage, area and speed. To validate the balanced method, two topologies of dynamic comparator implemented in 0.25- $mu{hbox {m}}$ and 40-nm CMOS technology are applied as examples. Input-referred offset voltages are first derived analytically based on SPICE Level 1 model, whose values are compared with more accurate Monte Carlo transient simulations using a sophisticated BSIM3 model. A good agreement between those two verifies the effectiveness of the balanced method. To illustrate its potential, the explicit expressions of offset voltage were applied to guide the optimization of “Lewis-Gray” structure. Compared to the original design, the input offset voltage was easily reduced by 41% after the optimization while maintaining the same silicon area.      

应用于14bit SAR ADC的高精度比较器的设计

基于预防大锁存理论,设计了一款带有三级前置运算放大器和latch再生电路的高精度比较器.为了实现高精度,采用了输入失调储存(IOS)和输出失调储存(OOS)级联的消失调方法,有效降低了比较器的输入失调电压.传统的比较器动态失调测试方法非常耗时,为此采用新的带负反馈网络的动态失调测试电路,从而大大提高了比较器的设计和仿真效率.Hhnec CZ6H(0.35μm)工艺下,仿真表明,比较器能够分辨的最小信号为33.2μV,满足14 bit SAR ADC对比较器的性能要求.     

新型高性能开关电源电压型PWM比较器

设计并实现了一种高性能的电压型PWM比较器,电路采用PMOS差分对管做为输入,多路电流镜提供精密负载电流,具有输入失调电压低、工作频率高、转换速率快和功耗低等优点.该电路可以替代普通电压型PWM比较器,直接运用在开关电源电压型PWM控制芯片中,并且能模块化设计,提高了PWM控制芯片的系统集成.     

可自校正失调电压的BiCMOS锁存比较器设计

在对传统CMOS锁存比较器分析的基础上,设计了一种可自校正失调电压的BiCMOS锁存比较器,它既具有双极型电路快速、输入失调电压低和大电流驱动能力,又具备CMOS电路低功耗和高集成度的特性,因而它们特别适用于高速缓冲数字信息系统和其它便携式数字设备.     

A low-power low-offset dynamic comparator for analog to digital converters

A comparator comprises a cross coupled circuit which produces a positive feedback. In conventional comparators, the mismatch between the cross coupled circuits determines the trade-off between the speed, offset and the power consumption of the comparator. A new low-offset low-power dynamic comparator for analog-to-digital converters is introduced. The comparator benefits from two stages and two operational phases to reduce the offset voltage caused by the mismatch effect inside the positive feedback circuit. Rigorous statistical analysis yields the input referred offset voltage and the delay of the comparator based on the circuit random parameters. The derivations are verified with exhaustive Monte-Carlo simulations at various corner cases of the process. A comparison between typical comparator and the proposed comparator in 180 nm and 90 nm has been made. The power consumption of the proposed comparator is about 44% of the conventional and its offset voltage is at least one-third of other mentioned conventional comparators.     

Linear in dB,sub 0.2 dB gain-step CMOS programmable gain amplifier for ultrasound applications

Transistor sizing is one of the most critical parts of comparator design which has a significant influence on comparator specifications. This paper presents an optimum design of a double-tail latch comparator based on transistor sizing with a great certainty to reach the best possible design due to using Hspice (as a software simulator) linked with a heuristic algorithm. To achieve a low-power, high-speed, low offset and, small size comparator, the multi-objective inclined planes optimization and Hspice were linked and several Pareto-fronts were obtained. As a result of analyzing the Pareto-fronts, power and total sizes of transistors have a tradeoff with delay and offset voltage. Meanwhile, the results comparison with a recent work shows the superiority of the present approach performance.     

A novel low-power,low-offset,and high-speed CMOS dynamic latched comparator

A novel dynamic latched comparator with offset voltage compensation is presented. The proposed comparator uses one phase clock signal for its operation and can drive a larger capacitive load with complementary version of the regenerative output latch stage. As it provides a larger voltage gain up to 22 V/V to the regenerative latch, the input-referred offset voltage of the latch is reduced and metastability is improved. The proposed comparator is designed using 90 nm PTM technology and 1 V power supply voltage. It demonstrates up to 24.6% less offset voltage and 30.0% less sensitivity of delay to decreasing input voltage difference (17 ps/decade) than the conventional double-tail latched comparator at approximately the same area and power consumption. In addition, with a digitally controlled capacitive offset calibration technique, the offset voltage of the proposed comparator is further reduced from 6.03 to 1.10 mV at 1-sigma at the operating clock frequency of 3 GHz, and it consumes 54 μW/GHz after calibration.     

An improved low offset latch comparator for high-speed ADCs

This paper presents a new high-speed and low offset latch comparator. The proposed offset compensation technique for latch comparator enables the preamplifier design relaxation for high-speed and high-resolution analog-to-digital converters. Employing the negative resistance of regeneration latch to enhance the comparator gain in input tracking phase is the key idea to reduce the latch input referred offset voltage. The Monte-Carlo simulation results for the designed comparator in 0.18 μm CMOS process show that equivalent input referred offset voltage is 200 μV at 1 sigma while it was 26 mV at 1 sigma before offset cancellation. The comparator dissipates 600 μW from a 1.8 V supply while operating in 500 MHz clock frequency.