超空泡图像的自适应多尺度小波边缘检测

针对水下高速射弹试验获取的超空泡图像中夹杂较多噪声,而传统边缘检测算法在自动边缘检测中抑制噪声效果差的问题。文中采用自适应多尺度小波边缘检测,对超空泡图像进行边缘检测。算法中首先对图像进行多尺度下的小波变换和相邻尺度间的梯度增强,再采用K均值聚类进行边缘的自动检测,得到不同尺度下的边缘,根据小波基的不同选择对应的多尺度融合方法进行多尺度融合,得到最终的边缘图像。实验表明,文中算法相比传统边缘检测算法,有效地抑制了图像中噪声,得到了更完整的边缘信息。     

基于多方向小波期望最大融合的图像边缘检测算法

针对传统图像边缘检测算法抗噪能力差,定位准确性不高的缺点.提出了一种基干多方向多尺腰小波变换的图像边缘检测算法.该算法利用小波变换各尺度间边缘梯度信息的关联及备方向上边缘梯度信息的互补,首先从多个方向对图像进行多尺度小波变换.然后将各个方向上小波系数根据期望最大规则进行融合,再通过最大墒阈值处理,形成图像的边缘。宾验结果表明,由于算法省去了求模值过程,使计算更加简单.同时通过多方向小波变换能尽可能地搜索各方向的图像边界,使边缘定位更加准确.     

基于提升小波和形态学融合的图像边缘检测

针对传统边缘检测方法边缘定位不精确的缺点,结合提升小波变换和数学形态学的优势,提出了一种融合提升小波和多尺度形态学的边缘检测方法.首先,对原始图像进行提升小波变换;再用小波变换和多尺度形态学算子分别对低频图像进行边缘检测,根据异或原则融合成低频边缘;然后,用小波变换检测高频图像边缘;最后,通过提升小波反变换得到边缘图像.实验结果表明,与传统或其他的形态学边缘检测方法相比,该算法在保持图像边缘清晰的同时,具有很强的边缘定位能力.     

基于Contourlet变换和Canny算子的图像边缘检测方法

现存的基于空间域或小波变换域的图像边缘检测算法只能有效检测出红外图像有限方向的边缘.由于这些算法没有充分利用邻域的信息,因此在边缘较为复杂的区域边缘检测结果中会出现较大的偏差.针对这一问题,提出了一种基于Contourlet变换和Canny算子的边缘检测算法,首先对原始图像进行Contourlet变换,然后利用各方向子带的方向信息及其梯度方向信息,对各个尺度进行边缘检测,最后通过逆变换,得到图像的边缘图像.实验结果表明了新算法可以提高边缘检测和保持的能力,有较强鲁棒性.     

基于小波变换的图像边缘检测

介绍了利用小波变换进行图像边缘检测的原理与方法。基于小波变换的模极大值原理,利用不同尺度小波变换后的不同方向获取图像的高频信息,并通过小波系数的模极值点与过零点,检测出图像在四个方向上的模极大值,得到该位置模的局部最大值。仿真测试表明,利用小波变换进行图像边缘检测可以较好的检测图像边缘的细节特征,取得了很好的效果。     

基于小波变换的图像边缘检测

介绍了利用小波变换进行图像边缘检测的原理与方法。基于小波变换的模极大值原理,利用不同尺度小波变换后的不同方向获取图像的高频信息,并通过小波系数的模极值点与过零点,检测出图像在四个方向上的模极大值,得到该位置模的局部最大值。仿真测试表明,利用小波变换进行图像边缘检测可以较好的检测图像边缘的细节特征,取得了很好的效果。     

一种改进的含噪图像边缘检测算法

数字图像边缘检测是图像分割、识别等图像分析和理解领域中的重要基础。针对图像边缘检测中噪声抑制与细节保留之间的矛盾,提出了一种基于小波变换和数学形态学改进的含噪图像边缘检测算法。该算法对含噪图像分别采取小波变换法和数学形态学法进行边缘提取,将所得图像进行小波分解,对高低频系数分别采取不同融合规则进行融合,通过逆小波变换得到融合图像。通过实验对比不同算法对含噪图像的边缘检测效果图,结果表明,该算法提取的图像边缘轮廓信息连续完整,在较大程度上能够抑制噪声,较好地保留了图像的细节信息。     

基于改进小波变换的医学图像融合算法研究

本文主要针对图像经过小波变换后边角上看不清楚和传统的边缘检测算法对噪声敏感的问题,结合医学图像的特点,提出一种小波变换的修正算法。首先采用改进的多结构元多尺度形态学梯度的边缘检测进行图像的预处理,其次对CT图像和MRI图像分别进行两种不同小波基的三层小波分解;接着求其对应分量系数的差值图像,最后按着一定加权融合系数对差值图像进行融合得到最终的融合图像。实验结果和评价参数表明,这种改进的医学图像融合算法相比于传统的多小波融合算法不仅强化了融合图像的边缘和纹理特征,提高了分辨率,而且有效地保留了原图像的信息。     

基于方向小波变换的边缘检测算法

提出了一种基于方向小波变换的边缘检测算法.本文详细介绍了方向小波变换的原理、基于此的图像边缘检测算法,比较了方向小波变换和传统小波变换、Canny算子在图像边缘检测的效果.实验结果表明,方向小波变换更符合图像的方向、纹理特征,因此更能反映图像的边缘信息,对传统的小波变换、Canny边缘检测算法有一定程度的改进.     

基于小波变换多尺度积的图像融合算法

图像融合是图像处理中的关键技术之一。它在军事和民用图像处理领域获得了广泛的应用。提出了一种新的基于小波变换多尺度积的图像融合算法，小波变换多尺度积具有放大信号边缘特征和降低信号噪声的特点，有利于在融合图像中保持图像的细节特征。利用统计分析的评判准则，如熵、标准偏差评价图像的融合效果。实验结果表明该方法提高了图像的熵和标准偏差。在保留原图像信息的情况下增强了融合图像的细节信息。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.