基于偏振合束的相移雅满剪切干涉仪

相移雅满横向剪切干涉仪非常适合于达到衍射极限的光束的波面检测。为了改进现有的在两路剪切光束中直接插入起偏器的相移雅满剪切干涉仪,提出了一种基于偏振合束的相移雅满剪切干涉仪。该剪切干涉仪利用雅满平板前后表面的反射进行分束并形成两路干涉光束,两路干涉光束分别通过剪切平板后偏振合束并进行偏振移相。它保持了常规雅满剪切干涉仪的光路结构,提高了剪切干涉图的对比度,不再存在插入起偏器引入测量误差的问题。构建了改进前、后的两种相移雅满双剪切干涉仪,并进行了相应的对比实验,实验结果很好地验证了基于偏振合束的相移雅满剪切干涉仪的实用性。     

相移雅满横向剪切干涉仪

雅满横向剪切干涉仪是一种很重要的波面检测仪器,特别是可以对白光的波面进行检测.为了弥补传统雅满横向剪切干涉仪的不足,提出了一种相移雅满横向剪切干涉仪.它是在雅满横向剪切干涉光路中插入起偏器,1/4波片和检偏器所形成,实现了剪切干涉与相移的结合,能有效地提高测量精度,可适用于白光的波面检测,结构简单且操作方便.实验中通过旋转检偏器获得了相移干涉图,其结果很好地验证了该相移雅满横向剪切干涉仪的有效性.     

光干涉方法在角度偏差测量中的应用

介绍了应用光学干涉原理测量棱镜光学平行差的方法.棱镜可等效展开为玻璃平板,其入射面与出射面的光程差恒定,通过波长调谐方法,改变等效玻璃平板之间的位相差,从而用移相干涉术测量了光学棱镜的光学平行差.介绍了一种立方体玻璃90°偏差测量的新方法,斐索干涉仪的测试光束以45°入射到立方体玻璃内,入射波面经立方体90°二面角自准直反射,与干涉仪参考波面相干形成干涉图.分析了干涉波面与立方体玻璃二面角误差之间的关系,并通过移相式干涉仪给出了实测结果.     

三平板剪切干涉仪自动测试系统

三平板剪切干涉仪是环路剪切干涉仪中最简单的一种,它具有基本等光程、剪切量连续可调、两出射光束恒相互平行等特点。利用三平板剪切干涉仪对激光器出射波面质量进行检测,探讨了由剪切干涉图复原原始波面的1阶微分法,编制了专家辅助软件系统,为光机型的三平板剪切干涉仪配置了实时图像采集、处理系统,实现了光、机、电、算相结合,融硬、软件于一体的数字波面剪切干涉仪,并通过实验验证了方法的重复性精度。     

二维横向剪切干涉仪

一张剪切干涉图不足以描述一个波面.要重构一个任意形状的波面,必须用两张正交方向剪切的干涉图.本文研究了两种类型的二维横向剪切干涉仪:正交剪切棱镜型和网格光栅型.论述了用干涉图数据来重构波面的方法,并用这种方法处理了我们实验中所获得的干涉图.     

马赫-曾德尔外差干涉椭偏仪非线性误差分析

马赫-曾德尔外差干涉椭偏仪是一种重要的光偏振态实时测量技术。为了提高测量系统的精度、降低误差,采用外差干涉光路分析和数值模拟的方法,理论推导了透射式马赫-曾德尔外差干涉椭偏仪光路的误差公式。结果表明,光源偏振的椭圆化程度,偏振分光棱镜消偏比及倾斜都能引起测量误差;同误差参量下待测光束不同的椭偏比和s,p分量相位差得到的测量误差不同;马赫-曾德尔外差干涉仪的误差结果与迈克尔逊外差干涉仪相近。     

棱镜全息干涉法制作二维光子晶体的研究

模拟了Top-cut棱镜全息干涉生成的各种光学晶格结构,为棱镜法制作光子晶体提供参考。用全息干涉理论分析了top-cut六棱镜多光束干涉生成的光学晶格结构,考虑了光束数目、偏振方向以及位相的不同对晶格结构的影响。改变光束数目可以生成不同周期的正六角、斜六角光学晶格;改变光束偏振特性则影响光学晶格格点的形状;改变光束初位相可以生成蜂窝状结构等。另外还模拟了top-cut五棱镜所生成的十重旋转对称光学准晶结构。并且用平面波展开法计算了六角和蜂窝结构的有机光子晶体带隙图,证明了蜂窝结构更容易产生大的光子带隙。     

径向剪切干涉图的数学拟合及CCD—计算机处理

剪切干涉法是近二十年才发展起来的一种光学测试技术,因它不需要参考波面,而特别适用于光束质量检测等系统。但是剪切干涉图不能直接反映待测光束的波差,这就使剪切干涉图的处理极为复杂而限制了其广泛应用。目前横向剪切干涉图的处理研究取得     

会聚光横向剪切移相干涉

为了检测长光程情况或多组分光学镜头逐片装校中的波面,提出一种以会聚光波直接作为干涉测试光源的会聚光移相剪切干涉方法,阐述了基于迈克耳孙干涉仪原理的会聚光横向剪切干涉光路,建立了会聚光横向剪切波面的数学表达式,并与一般横向剪切干涉相比较,分析了剪切量和波面偏移量的特征,且引入移相干涉技术求取剪切波面.结果表明,会聚光横向剪切移相干涉测试,能够实时测试会聚光的波面质量,峰谷值(PV)的重复性为0.022λ,均方根(RMS)值的重复性为0.014λ,并与Zygo干涉仪的测量结果进行了对比,验证会聚光剪切移相干涉的可行性.     

采用短相干光源的动态斐索干涉仪

为了实现斐索型干涉仪的动态干涉测试,研究了一种采用短相干光源的动态斐索干涉仪。以中心波长为638 nm、带宽为0.1 nm的二极管泵浦固体激光器作为光源,与偏振延迟装置结合得到一对短相干正交线偏振光,通过调节光源模块中两支线偏振光的光程差来匹配斐索干涉腔的长度,从而获取一对光程差为0的相干光束。使用偏振相机采集得到四幅位相依次相差/2的移相干涉图,按照四步移相算法解算相位,恢复待测元件的表面面形。采用光强归一化算法有效地抑制了偏振态误差导致的移相干涉图光强不一致在最终恢复波面中引入的一倍频波纹误差。采用琼斯矢量和琼斯矩阵分析了干涉图对比度与s光和p光光强比值的关系,并分析了1/4波片方位角误差对最终恢复波面的影响。利用该装置和Zygo GPI XP型干涉仪测量了同一块光学平晶,其均方根值相差0.024,峰谷值相差0.026。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.