智慧校园物联网一体化设计

校园信息化发展到智慧校园2.0阶段,学校对硬件设备智能化的要求与日俱增.随着物联网技术的发展,校园物联网在智慧校园日常管理中发挥着越来越重要的作用.基于面向服务的网络架构(Service-Oriented Architecture,SOA),将物联网技术和智慧校园综合服务平台相结合,对智慧校园物联网进行一体化设计,并分析了几个典型的智慧校园物联网综合应用,以期达到对教育教学进行智慧管理的目标,为智慧校园建设提供一定的参考.其中部分应用已经在部分学校实施,并取得了良好的效果.     

物联网的技术思想与应用策略研究

在综合分析物联网的基本概念和关键技术研究进展的基础上,研究提出了关于"多域融合共享和泛在综合服务"的物联网核心技术思想;研究了智慧化综合服务平台的技术体系结构并且建立了相应的实验理论模型;研究建立了实现未来物联网市场应用、融合共享、泛在服务、商业模式和产业结构的商务应用模型,提出了"智慧服务商店"的概念,并研发了实用的"智慧校园"综合服务示范实验系统和实验性"物联网科技园智慧服务商店";研究了以物联网应用为标志、以产业应用和智慧服务为特征的后互联网时代新兴智慧服务产业的应用策略.     

嘉兴市秀洲区数字乡村智慧农业方案设计

嘉兴市秀洲区原有农业信息化系统多为烟囱式架构,各系统之间相互独立,数据分散,且部分数据准确性较差,无法满足农业发展的需求.秀洲区智慧农业示范项目综合应用物联网、大数据和云计算等新技术,搭建智慧农业物联网和大数据分析平台,构建了秀洲全产业链数字化平台、秀洲农业数字化监管平台和秀洲农业数字化服务平台;同时应用GIS和数据可...     

REST架构机制下的物联网服务平台设计

研究REST架构机制下的物联网服务平台设计。通过在REST架构机制下构建物联网服务平台,分析物联网服务平台设计需求,从而制定出优化的平台设计方法,以便可以设计实现基于REST架构机制的物联网服务平台。结果表明,在REST架构机制下设计物联网服务平台,不仅具有高拓展性,也可以扩展客户端功能,设计的物联网服务平台的性能提升了20.0%,可发挥积极的应用效益,值得推广。     

基于大数据云平台的智慧社区顶层架构设计

本文从智慧社区的系统架构、智慧社区综合服务云平台、智慧社区物联网平台和智慧社区APP等四个方面进行架构设计,并对各架构进行了详细阐述,从而为政府和企业建设智慧社区提供了功能参考模型和建设思路,推动了智慧社区的发展,具备一定的参考价值。     

智慧社区真正走进百姓家庭

正智慧社区是指充分利用物联网、云计算、移动互联网等新一代信息技术的集成应用,为社区居民提供一个安全、舒适、便利的现代化、智慧化生活环境。上海国茂针对智慧城市、数字家庭的概念,推出了智慧社区新媒体信息发布系统,是一个服务于社区百姓、物业部门、街道居委会等的智慧社区信息服务平台。智慧社区新媒体信息发布系统上海国茂的新媒体信息发布系统突出为百姓提供便捷服务,可利用终端产品为小区或者园区住户、业主、企业集团提供社区或者园区公共服务、物业服务、信息查询及验证服务。利用信息化手段建设智慧社区,提升社区和园区     

Web of Things：开放的物联网系统架构研究

针对过去几年物联网以垂直行业应用为主,系统部署成本高,缺乏系统间跨行业的资源共享,用户只能被动接受服务,无法参与到服务的生成中,不利推广等问题,将Web技术作为Internet of Things实现和推广的手段,对目前国内外Web of Things工作进行了总结分析,提出了扁平化的Web of Things开放架构.首先分析了现有Internet of Things架构的不足和需求,并结合现有的Web of Things概念模型,提出了Web of Things开放架构和其中的关键技术、开放模式.最后,对Web of Things和Internet of Things进行了系统对比.     

智慧园区建设探讨

园区是我国经济建设中的一种重要形态,智慧化是今后园区建设发展的必然方向。给出了智慧园区信息服务平台的体系结构,分为感知层、网络层、平台层和(智慧)应用层4个层次,基于该体系结构讨论了园区各个层的建设内容。感知层收集园区数据信息,是智慧的基础;数据互联是智慧的核心,网络层和平台层提供数据互联的基础设施,应用层挖掘数据间的关联,提供各类应用服务,是智慧的体现。分析了智慧园区建设中涉及的若干关键技术,包括物联网、云计算、面向服务的架构(SOA)和安全。智慧园区可看作一组物联网应用,云计算是实现平台层的理性技术,而SOA支持智慧服务的快速开发和部署。最后针对园区建设内容多、周期长等特点,讨论了园区建设规划问题。     

物联网“云管端”的技术发展与应用

目前全球物联网市场还处在初级阶段,物联网产业发展机遇与挑战并存,但物联网的建设被上升到国家战略的层面,总体发展前景广阔.基于“云管端”的未来物联网信息服务的新架构,不只是一种网络架构,而是新的信息服务平台架构,同时也是新的发展战略的体现.     

基于物联网的用户侧智能用电方案探究

随着经济和社会的不断发展,人们更加渴望获得经济高效、便捷安全、服务多样、灵活互动和友好开放的用电服务,基于物联网的用户侧智能用电方案研究,分析了物联网技术、用户侧智能用电服务系统的逻辑架构和智能用电服务系统的物理架构,为企业推广智能用电提供了全新的思路。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its