LAMBDA算法在卫星导航定位中的应用研究

卫星导航定位中,基于载波相位观测值的RTK定位技术能够在达到厘米级的定位精度,其核心技术是整周模糊度的快速解算。采用LAMBDA方法能快速解算整周模糊度完成初始化,实时周跳检测,搜索并固定新的模糊度。利用2个NovAtel接收机采集数据,对采集到的数据进行仿真验证。仿真结果显示,该方法缩短了搜索的时间,定位结果达到了精度要求。     

一种GNSS高精度动态解算中改进的LAMBDA算法及应用

1 引言 单历元高精度的基线解算依赖于正确的模糊度值,模糊度固定是单历元动态基线解算的核心.获得厘米级的测量精度,就必须对载波相位的整周模糊度进行精确解算[1].改进的LAMBDA算法在常规LAMBDA算法基础上进一步去相关和缩小模糊度搜索空间,从而提高了模糊度解算效率,为工程应用提供理论基础.     

粗糙归整映射与整周模糊度解算

在分析传统的基于GNSS载波相位测量模型对整周模糊度解算的一般规律后,得出一般归整映射的性质,进而提出粗糙归整映射理论,用来解决整周模糊度浮点解归整问题,提高了整周模糊度的搜索效率,一定程度上解决了载波相位实时测量的技术难题。     

GPS载波相位测量中的几个重要问题

利用GPS载波相位信息可以达到精密导航定位,本文对GPS载波测量时整周模糊解算方法和周跳的检测与恢复进行了研究,阐述了解模糊的Ex-tradwingding技术和模型函数法,重点研究了利用卡尔曼滤波技术实现“on-thfly”解模糊算法。     

GLONASS载波相位整周模糊度分析

由于GLONASS系统信号频率的差异,在载波测量数据处理中不能采用与GPS载波相位测量数据相同的方法,GLONASS整周模糊度的解算便成了一个难点问题。本文对GLONASS载波相位测量整周模糊度解算的基本思路和方法进行了介绍。     

基于GNSS系统的整周模糊度解算算法仿真

利用载波相位观测值可以大大提高导航定位精度,但整周模糊度的存在会严重影响结果的准确性。为了解决整周模糊度对载波相位观测值的影响,对LAMBDA算法求解整周模糊度的过程进行分析和设计,提出利用协方差分解来降低模糊度组数之间相关性的算法,设计相应的Matlab仿真验证系统并进行仿真。比较分析不同分解算法下的搜索域的大小以及修正解的准确性。结果表明,下三角分解算法的整周模糊度解算算法在搜索域大小上比上三角分解算法大,且解算速度较快,能运用于后续的姿态解算。     

双天线GPS航姿测量系统研究

本文研究两天线构成的航姿测量系统。该系统采用载波相位双差法进行GPS信号测量,利用直接法来求解载体的姿态。整周模糊度算法采用基于最小二乘法的整周模糊度搜索法,同时利用船舶的低精度姿态信息和预知的基线长度来辅助求解调整周期糊度,以提高求解速度,并增加可靠性,本文的方案经过了实测解算,证明可行。     

载波相位模糊度递推最小二乘逼近算法

针对目前常用的载波相位模糊度浮点解逼近算法存在收敛时间较长的缺点,利用递推最小二乘方法,对于单频载波相位双差模糊度进行递推解算,实现模糊度的快速逼近,加快了模糊度的搜索。实验结果表明,当采用单频GPS进行精密相对定位,采用本文模糊度逼近算法,使用伪距双差解作为初始值,静态条件下10s内模糊度浮点解收敛至真值整周模糊度的2个波长范围内,相对于传统算法大大加快了收敛时间,且适合实时解算。     

整周模糊度在线解算的综合法研究

针对空中小目标运动的特点,分析 GPS 载波相位测量容易产生信号失锁和周跳的原因,提出解决测量难题的关键技术是快速在线解算整周模糊度。在阐述几种模糊度在线解算方法优缺点的基础上,提出一种整周模糊度动态快速解算方法。该方法综合其它方法的优点,充分利用各种观测信息,在解算中根据具体情况确定具体算法,提高搜索的准确度和减少搜索的时间, 实现解算的实时性。     

GPS相位观测值中周跳的探测与修复

对于初始化载波相位整周模糊度的GPS定位而言,如果在整周模糊度初始化过程中发生载波相位周跳,将严重影响整周模糊度的确定.针对GPS载波相位定位中出现的周跳问题,提出了一种新的周跳的检测方法,首先用多项式模型的卡尔曼滤波对载波相位测量值进行预处理,然后再用奇偶矢量法探测和修复周跳.通过某OEM板输出的数据计算结果仿真,验证了新方法可以有效地探测出一周周跳.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its