共查询到20条相似文献,搜索用时 31 毫秒
1.
Effect of Temperature on Structural and Morphologic Properties of ZnO Films Annealed in Ammonia Ambient 总被引:3,自引:0,他引:3
Shoubin Xue Huizhao Zhuang Chengshan Xue Lijun Hu Baoli Li Shiying Zhang 《Journal of Electronic Materials》2007,36(4):502-506
ZnO thin films were prepared on Si(111) substrates by pulsed laser deposition (PLD). Then, the samples were annealed at different
temperatures in NH3 ambient and their properties were investigated particularly as a function of annealing temperature. The structure, morphology,
and optical properties of ZnO films were studied by x-ray diffraction (XRD), Fourier transform infrared spectroscope (FTIR),
scanning electron microscope (SEM), and photoluminescence (PL). The results show that the increase of annealing temperature
makes for the improvement in the crystal quality and surface morphology below the temperature of 650°C. However, when the
annealing temperature is above 650°C, the ZnO films will volatilize and, especially at 750°C, ZnO will volatilize completely. 相似文献
2.
《Materials Science in Semiconductor Processing》2007,10(4-5):215-221
In this study, p-type ZnO films with excellent electrical properties were prepared by ultrasonic spray pyrolysis (USP) combined with a N–Al co-doping technique. The influence of post-growth annealing conditions, i.e., annealing ambient and temperature, on optical and electrical properties of p-type ZnO films was investigated. The dependence of the intensity of the green emission on the annealing ambient indicates that the green emission might originate from the donor defect, oxygen vacancy. The effect of the annealing temperature on electrical properties of ZnO-based films affirms the prominent action of hydrogen in the conductivity and acceptor doping of ZnO films. 相似文献
3.
4.
5.
用脉冲激光沉积(PLD)方法在Si(111)和蓝宝石衬底上制备的氧化锌薄膜,在不同的退火温度和不同的退火氛围中进行了退火处理.退火温度及退火氛围对ZnO薄膜的结构和发光特性的影响用X射线衍射(XRD)谱和光致发光谱进行了表征.实验结果表明,随着退火温度的提高,ZnO薄膜的压应力减小,并向张应力转化.在不同的退火温度退火... 相似文献
6.
PLD法制备ZnO薄膜的退火特性和蓝光机制研究 总被引:1,自引:0,他引:1
通过脉冲激光沉积(PLD)方法,在O2中和100~500℃衬底温度下,用粉末靶在Si(111)衬底上制备了ZnO薄膜,在300℃温度下生长的薄膜在400~800℃温度和N2氛围中进行了退火处理,用X射线衍射(XRD)谱、原子力显微镜(AFM)和光致发光(PL)谱表征薄膜的结构和光学特性。XRD谱显示,在生长温度300℃时获得较好的复晶薄膜,在退火温度700℃时获得最好的六方结构的结晶薄膜;AFM显示,在此退火条件下,薄膜表面平整、晶粒均匀;PL谱结果显示,在700℃退火时有最好的光学特性。 相似文献
7.
8.
通过飞秒脉冲激光(50 fs,800 nm,1 kHz,2 mJ)沉积技术在n型Si(100)单晶基片上制备了ZnO薄膜.详细研究了基片温度变化以及退火处理对ZnO薄膜的结构、表面形貌及光学性质的影响.X射线衍射(XRD)结果表明,不同温度下(20~350℃)生长的ZnO薄膜具有纤锌矿结构,并且呈c轴择优取向;当基片温度为80℃时,薄膜沿(002)晶面高度择优生长;当基片温度为500℃时薄膜沿(103)晶面择优生长,场发射扫描电子显微镜(FEEM)结果表明薄膜呈纳米晶结构,并观察到了ZnO的六方结构.进一步通过透射光谱的测量讨论了基片温度及退火处理对ZnO薄膜光学透射率的影响,结果表明退火后薄膜的透射率增大. 相似文献
9.
10.
HE Jian-ting ZHUANG Hui-zhao XUE Cheng-shan ZHAO jing TIAN De-heng WU Yu-xin LIU Yi-an XUE Shou-bin HU Li-jun 《半导体光子学与技术》2005,11(4):239-243,258
Pulsed laser deposition (PLD) is emerging as the most rapid and efficient technique for fabricating the many compound films. ZnO thin films can be prepared under various deposition conditions by PLD. The effects of various substrate temperature, oxygen partial pressure, annealing temperature, substrate, buffer layers thickness and film thickness on micro-structural, optical and electrical properties of ZnO films grown by PLD technology are reviewed. ZnO films with special function can grow under proper conditions by PLD. 相似文献
11.
采用反应磁控溅射法在室温下沉积前驱体氮化物,在大气环境、500℃下氧化退火30min后获得了Al-N共掺杂ZnO:Mn薄膜。研究了直流与射频反应磁控溅射对氧化退火薄膜结构和性能的影响。结果表明:两种工艺制备的退火薄膜均具有ZnO纤锌矿结构,且均为n型导电。射频溅射退火样品具有很好的c-轴择优取向,其表面光滑平整,表面粗糙度RMS值为1.2nm,且具有室温铁磁性,饱和磁化强度(Ms)和矫顽力(Hc)分别为46.8A·m–1和4.9×103A·m–1;而直流溅射退火样品表面凹凸不平,RMS值为25.8nm,室温下是反铁磁性的。 相似文献
12.
13.
14.
15.
Zinc oxide (ZnO) and nickel oxide (NiO) thin films were prepared on glass substrates by a sol–gel method. Spin coating was used to fabricate a p-NiO/n-ZnO junction. The influence of the post annealing atmosphere (air or nitrogen) on the microstructure and surface morphology of NiO and ZnO thin films and the p-NiO/n-ZnO junction are examined. The structural properties are characterized by X-ray diffraction (XRD) and the surface morphology of the thin films and the p–n junction are investigated by atomic force microscopy (AFM). Optical properties are investigated by UV–visible spectroscopy and the electrical properties, such as I–V photocurrent, are characterized by a voltage source meter instrument. XRD patterns show that the films are polycrystalline with preferred orientation in the (002) direction for the ZnO films and the (200) direction for the NiO films. The AFM results indicate that the morphology of the ZnO and NiO films and the p-NiO/n-ZnO junction are mainly influenced by the annealing atmosphere. All films have a high optical transmittance of about 80% in the visible region and a sharp absorption edge. The optical band gaps of the two materials change with the annealing atmosphere (air or nitrogen). The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region, which lies between the transmittance of the ZnO and NiO films separately. The ideality factor, barrier height, and series resistance of the heterojunction treated in different annealing atmospheres are determined by using conventional forward bias I–V characteristics and also Norde׳s and Cheung׳s methods. 相似文献
16.
采用磁控溅射技术在Si(111)衬底上溅射Au薄膜,900℃退火生成Au点阵模板,在Au点阵模板上溅射ZnO薄膜,O2气氛下1 000℃退火制备了ZnO堆垒单晶棒。研究了不同直径Au点阵模板对ZnO单晶棒结构性能的影响。采用扫描电镜(SEM)、高分辨透射电子显微镜(HRTEM)、X射线衍射(XRD)、X射线光电子能谱(XPS)对样品结构形貌进行了分析。结果表明,生成有序排列的ZnO棒均由诸多六方纤锌矿单晶堆垒而成,较小Au点阵生成单晶棒的直径约为100nm。室温光致发光PL谱表明在376nm出现一个较强近紫外发射,在488nm附近出现一个较宽的深能级绿光发射,说明所制备样品具有良好的发光特性。 相似文献
17.
We report a novel method to grow silver nanoparticle/zinc oxide (Ag NP/ZnO) thin films using a dual-plasma-enhanced metal-organic chemical vapor deposition (DPEMOCVD) system incorporated with a photoreduction method. The crystalline quality, optical properties, and electrical characteristics of Ag NP/ZnO thin films depend on the AgNO3 concentration or Ag content and annealing temperature. Optimal Ag NP/ZnO thin films have been grown with a AgNO3 concentration of 0.12 M or 2.54 at%- Ag content and 500 °C- rapid thermal annealing (RTA); these films show orientation peaks of hexagonal-wurtzite-structured ZnO (002) and face-center-cubic-crystalline Ag (111), respectively. The transmittance and resistivity for optimal Ag NP/ZnO thin films are 85% and 6.9×10−4 Ω cm. Some Ag NP/ZnO transparent conducting oxide (TCO) films were applied to InGaN/GaN LEDs as transparent conductive layers. The InGaN/GaN LEDs with optimal Ag NP/ZnO TCO films showed electric and optical performance levels similar to those of devices fabricated with indium tin oxide. 相似文献
18.
This paper describes our investigation on the thermal stability of sputterdeposited, piezoelectric, ZnO thin films, using
x-ray photoelectron spectroscopy (XPS), capacitance-voltage (C-V) measurements of metal-insulator-semiconductor structures,
and electron microprobe. We focus on out-diffusion of Zn from ZnO thin films at a high temperature (450°C) and the composition
change of zinc and oxygen after high temperature annealing (up to 700°C), since these factors are related to reliability and
integrated circuits-process-compatibility of the ZnO films which are being used increasingly more in microtransducers and
acoustic devices. Our experiments with electron microprobe show that ZnO thin films sputter-deposited from a ZnO target in
a reactive environment (i.e., with O2) are thermally stable (up to 700°C). Additionally, the out-diffusion of zinc atoms from the ZnO films at a high temperature
(450°C) is verified to be negligible using the XPS and C-V measurement techniques. The usage of a compound ZnO target, reactive
environment with O2 and optimized deposition parameters (including gas ratio and pressure, substrate temperature, target-substrate distance and
rf power, etc.) is critical to deposit thermally stable, high quality ZnO films. 相似文献
19.
Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al2O3 powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature. 相似文献
20.
Youssef Jouane Silviu Colis Guy Schmerber Aziz Dinia Patrick Lévêque Thomas Heiser Yves-André Chapuis 《Organic Electronics》2013,14(7):1861-1868
Zinc oxide (ZnO) has recently shown to be of considerable interest for the development of interfacial buffer layers in inverted organic solar cells (OSCs). High quality ZnO thin films can indeed be prepared on large-area ITO-coated flexible substrates, using low temperature deposition techniques such as sputtering, a compatible technique with roll-to-roll process. However, further studies are still needed for a better understanding of the influence of the flexible substrate properties on the photovoltaic performances of those devices. In this work, ZnO films have been sputtered on ITO-coated flexible (PEN) substrates and annealed at different temperatures. The role of the surface morphology and the crystalline quality of ZnO films has been investigated. In the window of flexible compatible process, we found that moderate annealing temperatures of ZnO (?180 °C) lead to improved structural properties and performances. Interestingly, we achieve optimal performances for an annealing temperature of 160 °C, resulting in power conversion efficiency (PCE) equivalent to the highest performances usually achieved on rigid cells. 相似文献