大功率LED驱动谐振电路设计

通过分析对比大功率LED驱动电路的拓扑结构,采用LLC谐振拓扑,提出了一种适用于宽范围恒流输出的设计方法,并进行了效率优化。LLC半桥谐振变换器可在全负载范围内实现功率开关管的零电压开通（ZVS）和整流二极管的零电流关断（ZCS）,以此减小开关损耗。并且采用基波近似方法分析LLC谐振变换器,通过交流等效电路,导出了归一化直流增益曲线,讨论了半桥LLC的三种主要工作方式,以及对应的三个工作区间,分析了每个工作区间的特点和应用场合。     

数字控制LLC谐振全桥变换器的应用设计

针对模拟电源效率较低的现状,提出一种基于DSP的数字电源方案。在对LLC谐振全桥变换器工作原理简单分析的基础上,采用DSP TMS320F28335设计了一款输入为DC300-400V,输出为DC48V/12A的原理样机,利用Saber仿真软件对其进行仿真与调试,仿真结果与实验数据表明,本文设计的LLC全桥谐振变换器能够在全负载范围内实现初级零电压开通（ZCS）以及次级零电流关断（ZVS）,输出电压纹波小于±0.5%,效率达到95%以上,满足设计要求。结论表明,LLC谐振变换器符合电源高功率密度、高效率的发展要求。     

LLC谐振半桥DC-DC电路设计

LED驱动电源的后级DC-DC恒流电路采用LLC谐振半桥的拓扑结构,并通过输出的电流电压双环反馈来实现恒流限压功能。LLC谐振半桥DC-DC恒流电路的功率部分包括了谐振电路和输出整流电路,控制部分有芯片供电电路、控制芯片外围电路、输出反馈回路等,经试验证明该系统输出稳定好,能够长时间高效工作。     

基于L6599A的LLC半桥谐振变换器设计

LLC谐振变换器相对于其他拓扑具有结构简单、效率高、电磁干扰小的优点.介绍了由L6563H及L6599A控制芯片构成的半桥谐振变换器的方案,提出了一款150 W带功率因素校正(PFC)功能的电源设计要求,阐述了LLC谐振变换器的工作原理,推导出LLC谐振变换器的计算公式,得到了谐振电容、串联电感、激磁电感的设计参数,从而计算出L6599A的外围参数,对变压器的设计具有指导价值.     

应用在通信二次电源中的LLC串联谐振变换器的研究

LLC串联谐振变换器以其卓越的性能,较低的成本迅速成为液晶电视电源,通信一次电源等的首选拓扑,但该拓扑目前还极少应用于通信二次电源中。文章从LLC串联谐振变换器的直流增益入手,分析了该拓扑应用于二次电源时需要考虑的因素．并通过仿真手段对一个二次电源的输出特性及小信号特性进行了设计验证。     

UC3863控制的并联谐振电源

分析了并联LLC谐振变换器的特性,并做了开关顺序并联与交错并联情况下变换器特性的比较,以UC3863芯片为核心控制芯片的开关电源,电路采用半桥结构的LLC谐振电路,这种模式很少被提出,通过实验证明了可行性和实用性,大大提高了LLC的工作效率。通过对各器件参数的理论计算,运用SABER仿真软件对变换器电路进行仿真和分析。文中以300V电压输入,12V-18V输出电压为例,2．5kW,500kHz并联LLC谐振变换器设计和仿真来进行模型分析,从而总结出并联LLC谐振变换器相对于传统单一LLC谐振变换器的优点。仿真结果验证了设计的可行性与结论的准确性。     

基于LLC谐振的多路输出LED路灯恒流驱动电路

介绍了LLC谐振变换器的基本原理,并结合L6599、L6563以及LM3404,设计了一款适用于大功率LED路灯照明的谐振式多路输出恒流驱动电路.该电路采用LLC谐振网络,有效地减小了功率器件的损耗,提高了在多路输出LED驱动电路中的整机效率.在恒流网络中,通过优化拓扑结构,优化了恒流特性,减弱了输出电压对输出电流的影...     

LLC串连谐振半桥变换器在LCD TV电源中的应用

介绍了采用NXP（原PHILIPS）公司LLC专用芯片TEA1610设计的LCD TV电源DC／DC隔离变换器,并描述了LLC串连谐振半桥变换器的工作原理．设计方法及其优缺点。     

LLC谐振转换器之分析

全球对降低能耗的需求正在促进节能技术的推广。在70W～500W交流输入电源中,由于LLC谐振转换器（效率通常在90％以上）的效率高于标准电源拓扑,所以其应用越来越广泛。本文阐释了谐振转换器高效的原因,探讨了LLC谐振转换器的功能和优势,最后简要分析了一个采用FSFR2100 LLC谐振转换器的电源。     

基于交错Boost变流器和LLC谐振变流器的高效率车载充电机

载充电机(OBC)是电动汽车(EV)的关键部分,为EV提供充电通道。OBC的前级AC/DC电路采用交错Boost电路进行功率因数校正、控制直流母线电压。后级DC/DC采用隔离型全桥LLC电路对充电电压和充电功率进行控制。对交错Boost变流器的效率进行计算,并对LLC谐振变流器的效率进行优化。开发一台3.3 kW OBC样机,其整机效率高达94.9%,功率因数超过99.5%。交错Boost变流器和LLC谐振变流器的效率分别达到97.7%和97.6%,OBC的功率密度可达1.05 kW/L。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.