ODN“智能化”的考虑

智能ODN将电子标签技术应用到传统ODN中,利用电子标签对光纤进行惟一标识,自动存储、导入和导出光配线设备端口资源及光纤连接关系数据,从而实现光纤信息自动存储、光纤连接关系信息自动识别、光纤资源信息校准、可视化施工指导等功能。本文对智能ODN的系统构成、智能ODN关键技术的现有差异以及发展前景进行了探讨。     

ODN“智能化”的考虑

智能ODN将电子标签技术应用到传统ODN中,利用电子标签对光纤进行惟一标识,自动存储、导入和导出光配线设备端口资源及光纤连接关系数据,从而实现光纤信息自动存储、光纤连接关系信息自动识别、光纤资源信息校准、可视化施工指导等功能。本文对智能ODN的系统构成、智能ODN关键技术的现有差异以及发展前景进行了探讨。     

智能ODN建设策略探讨

1前言随着"宽带中国"建设提速,光纤宽带的大规模建设势不可挡,全国各省市如火如荼地开展光纤基础网络建设。网络规模的日益扩大使得传统ODN所带来的管理维护问题日益凸现,智能ODN的提出有助于全面解决光纤基础网络规模建设带来的海量光纤管理难题。所谓智能ODN,就是以电子化标签技术为基础,通过电子标签来标识ODN的光纤、端口、机架等各种无源资源,使其在网络中具有唯一的身份标识,从而接受网管系统的调度和管理,实现ODN的自动化运维和管理。     

智能ODN系统研究与设计

为解决光分配网络(ODN)面临的光纤错综复杂、故障定位低效等问题,提出了一种基于电子标签、光纤检测笔和智能光时域反射仪(OTDR)故障监测的智能ODN解决方案,并重点讲述了智能ODN系统的核心——新一代智能OTDR故障定位系统.通过对ODN的研究,结合光纤通信技术、计算机软件技术等,研究和设计了一套用于各种光纤问题的智能ODN系统.     

光网络哑资源深度学习智能管理系统

现阶段光网络哑资源的管理多采用人工方式进行监控管理,而引入电子标签的智能光分配网络（Optical Distribution Network,ODN)因成本高、改造实施困难导致运营商无法有效提高ODN网络质量。通过引入二维码标签及标签分别对分光器及尾纤进行标识,利用深度学习技术,采用Faster-RCNN网络对哑资源中尾纤、尾纤标签、分光器、二维码等信息进行统一识别管理,mAP(Mean Average Precision)达82.96%,满足实际需求,实现了哑资源智能管理,降低了管理与维护成本。     

智能ODN解决方案及应用探讨

智能光分配网络(ODN)技术因具有可管可控、稳定高效等优势,已成为近期光纤接入(FTTx)网络建设与改造的研究重点。首先,通过简单介绍业界三种典型的智能ODN解决方案,然后分析各自的差异性和优缺点,并提出了一种基于电子标签和二维码的智能ODN解决方案。最后,对智能ODN系统的发展进行了展望,认为制定智能ODN规范标准以及提高产品兼容性对实现ODN规模化发展及差异化运营具有重要的意义。     

智能ODN技术在FTTx网络中的应用分析北大核心

面对海量光纤管理维护难题,智能光分配网(Optical Distribution Network,ODN)开启全新管理模式,即通过增加电子标签赋予光纤网络智能特性。针对华为、中兴和烽火3家主流设备商相继推出的智能ODN技术在解决方案、功能特性、部署方案、研究现状等方面进行对比分析。商用测试部署证明,各家方案均能够实现光纤智能管理、故障定位及施工指导等功能。     

eID与RFID技术对比分析

1引言随着智能ODN的不断发展,越来越多的设备商加大对智能ODN的研究和投入。智能ODN的核心是采用电子标签取代纸件标签进行链路信息的自动读取,所以电子标签的性能成为产品基础。主流标签技术包括二维码、RFID（RadioFrequency ID）及eID（electronic ID）等。从目前的相关讨论和实际应用来看,二维码技术相比传统的标签方式在ODN资源信息准确性和录入效率方面改善有限,目前业界争论的焦点主要集中在RFID及eID,以下基于项目实践和测试,对这两种标签技术进行剖析。     

探讨智能ODN结构以及主要技术

由于光缆监测、资源管理和业务跟踪查询的优势,智能ODN逐渐成为光纤接入网的改革和发展方向。本文针对电力通信中的问题展开论述,通过对比各种技术的优劣分析电子标签技术的工作方式,并对智能ODN的结构和连接方式及主要技术进行探讨。     

智能ODN迎来规模部署良机

从提高资源利用率、提升服务质量、降低OPEX等方面详细阐述了智能ODN解决方案（sODN）的特点;从我国光纤宽带网的发展速度,以及对光纤线路资源的管理和维护复杂程度说明智能ODN已具备部署条件;最后根据sODN大面积试点和应用情况,如保证资源数据的100%准确、给建设部门提供准确的资源统计信息、通过图形化直观的方式显示各个业务区的配线资源等,给出了智能ODN应用前景。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its