Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide

Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single‐step emitter). An independently confirmed open circuit voltage (V_oc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved V_oc represents a significant improvement for all‐SiN passivated silicon solar cells. A conversion efficiency of 17˙8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO₂/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18˙3% were achieved. Copyright © 2000 John Wiley & Sons, Ltd.     

Approach for Al2O3 rear surface passivation of industrial p‐type Si PERC above 19%

Atomic layer deposition (ALD) of thin Al₂O₃ (≤10 nm) films is used to improve the rear surface passivation of large‐area screen‐printed p‐type Si passivated emitter and rear cells (PERC). A blister‐free stack of Al₂O₃/SiO_x/SiN_x is developed, leading to an improved back reflection and a rear recombination current (J_0,rear) of 92 ± 6 fA/cm². The Al₂O₃/SiO_x/SiN_x stack is blister‐free if a 700°C anneal in N₂ is performed after the Al₂O₃ deposition and prior to the SiO_x/SiN_x capping. A clear relationship between blistering density and lower open‐circuit voltage (V_OC) due to increased rear contacting area is shown. In case of the blister‐free Al₂O₃/SiO_x/SiN_x rear surface passivation stack, an average cell efficiency of 19.0% is reached and independently confirmed by FhG‐ISE CalLab. Compared with SiO_x/SiN_x‐passivated PERC, there is an obvious gain in V_OC and short‐circuit current (J_SC) of 5 mV and 0.2 mA/cm², respectively, thanks to improved rear surface passivation and rear internal reflection. Copyright © 2012 John Wiley & Sons, Ltd.     

Development of high‐efficiency large‐area screen‐printed solar cells on direct kerfless epitaxially grown monocrystalline Si wafer and structure

This paper demonstrates the potential of epitaxially grown Si wafers with doped layers for high‐efficiency solar cells. Boron‐doped 239 cm² 180–200 µm thick 2 Ω‐cm wafers were grown with and without 15 µm thick p⁺ layer, with a doping in the range of 10¹⁷~10¹⁸ cm⁻³. A layer transfer process involving porous Si layer to lift off epi‐Si wafers from the reusable substrate was used. The pp⁺ wafers were converted into n⁺pp⁺ passivated emitter rear totally diffused (PERT) cells by forming an oxide‐passivated POCl₃‐diffused n⁺ emitter at the front, and oxide/nitride‐passivated epitaxially grown p⁺ BSF at the entire back, with local screen‐printed contacts. To demonstrate and quantify the benefit of the epi‐grown p⁺ layer, standard passivated emitter and rear cells (PERCs) with local BSF and contacts were also fabricated on p‐type epi‐Si wafers as well on commercial‐grade Cz wafers. Sentaurus 2D device model was used to assess the impact of the epi‐grown p⁺ layer, which showed an efficiency gain of ~0.5% for this PERT structure over the traditional PERC. This was validated by the cell results, which showed an efficiency of ~20.1% for the PERC, and ~20.3% for the PERT cell using epi‐Si wafers. Experimental data showed higher FF in PERT cells, largely because of the decrease in lateral resistance on the rear side. Efficiency gain, a result of higher FF, was greater than the recombination loss in the p⁺ layer because of the lightly doped thick p⁺ epi‐grown region used in this study. Copyright © 2016 John Wiley & Sons, Ltd.     

Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p‐i‐n silicon solar cells

The photovoltaic effect of the silicon (Si)/silicon carbide (SiC) quantum dot super lattice (QDSL) and multi‐quantum well (QW) strucutres is presented based on numerical simulation and experimental studies. The QDSL and QW structures act as an intermediate layer in a p‐i‐n Si solar cell. The QDSL consists of a stack of four 4‐nm Si nano disks and 2‐nm SiC barrier layers embedded in a SiC matrix fabricated with a top‐down etching process. The Si nano disks were observed with bright field‐scanning transmission electron microscopy. The simulation results based on the 3D finite element method confirmed that the quantum effect on the band structure for the QDSL and QW structures was different and had different effects on solar cell operation. The effect of vertical wave‐function coupling to form a miniband in the QDSL was observed based on the solar‐cell performance, showing a dramatic photovoltaic response in generating a high photocurrent density J_sc of 29.24 mA/cm², open circuit voltage V_oc of 0.51 V, fill factor FF of 0.74, and efficiency η of 11.07% with respect to a i‐QW solar cell with J_sc of 25.27 mA/cm², V_oc of 0.49 V, FF of 0.69, and η of 8.61% and an i‐Si solar cell with J_sc of 27.63 mA/cm², V_oc of 0.55 V, FF of 0.61, and η of 10.00%. A wide range of photo‐carrier transports by the QD arrays in the QDSL solar cell is possible in the internal quantum efficiency spectra with respect to the internal quantum efficiency of the i‐QW solar cell. Copyright © 2015 John Wiley & Sons, Ltd.     

Structural tuning of wide‐gap chalcopyrite CuGaSe2 thin films and highly efficient solar cells: differences from narrow‐gap Cu(In,Ga)Se2

Simultaneous realization of high values of open circuit voltage (V_oc), fill factor (FF), and energy conversion efficiency (η) in wide‐gap CuGaSe₂ (CGS) solar cells has long been one of the most challenging issues in the realm of chalcopyrite photovoltaics. In this communication, structural tuning of CGS thin films by means of controlling the amount of Se flux used during CGS film growth and improvements in solar cell performance (V_oc > 0.9 V, FF > 0.7, and η > 10%) are demonstrated. Systematic variations in CGS film properties with the Se flux and correlation with device properties are shown. The unique CGS thin‐film growth kinetics, which are different from narrow‐gap Cu(In,Ga)Se₂, are also presented and discussed. This development of double digit efficiency for CGS solar cells opens a new frontier for the broad application of a new class of chalcopyrite‐based devices. Copyright © 2014 John Wiley & Sons, Ltd.     

Influence of Hole‐Transport Layers and Donor Materials on Open‐Circuit Voltage and Shape of I–V Curves of Organic Solar Cells

The effect of injection and extraction barriers on flat heterojunction (FHJ) and bulk heterojunction (BHJ) organic solar cells is analyzed. The barriers are realized by a combination of p‐type materials with HOMOs varying between –5.0 and –5.6 eV as hole‐transport layer (HTL) and as donor in vacuum‐evaporated multilayer p‐i‐metal small‐molecule solar cells. The HTL/donor interface can be seen as a model for the influence of contacts in organic solar cells in general. Using drift‐diffusion simulations we are well able to reproduce and explain the experimental I–V curves qualitatively. In FHJ solar cells the open‐circuit voltage (V_oc) is determined by the donor and is independent of the HTL. In BHJ solar cells, however, V_oc decreases if injection barriers are present. This different behavior is caused by a blocking of the charge carriers at a spatially localized donor/acceptor heterojunction, which is only present in the FHJ solar cells. The forward current is dominated by the choice of HTL. An energy mismatch in the HOMOs leads to kinks in the I–V curves in the cases for which V_oc is independent of the HTL.     

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

Atomic‐layer‐deposited aluminium oxide (Al₂O₃) is applied as rear‐surface‐passivating dielectric layer to passivated emitter and rear cell (PERC)‐type crystalline silicon (c‐Si) solar cells. The excellent passivation of low‐resistivity p‐type silicon by the negative‐charge‐dielectric Al₂O₃ is confirmed on the device level by an independently confirmed energy conversion efficiency of 20·6%. The best results are obtained for a stack consisting of a 30 nm Al₂O₃ film covered by a 200 nm plasma‐enhanced‐chemical‐vapour‐deposited silicon oxide (SiO_x) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single‐layer of Al₂O₃, resulting in a rear SRV of 90 cm/s. Copyright © 2008 John Wiley & Sons, Ltd.     

Large area tunnel oxide passivated rear contact n‐type Si solar cells with 21.2% efficiency

This paper reports on the implementation of carrier‐selective tunnel oxide passivated rear contact for high‐efficiency screen‐printed large area n‐type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n⁺ polysilicon layer provides excellent rear contact passivation with implied open‐circuit voltage iV_oc of 714 mV and saturation current density J_0b′ of 10.3 fA/cm² for the back surface field region. The durability of this passivation scheme is also investigated for a back‐end high temperature process. In combination with an ion‐implanted Al₂O₃‐passivated boron emitter and screen‐printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm² commercial grade n‐type Czochralski wafers. Copyright © 2016 John Wiley & Sons, Ltd.     

Lending Triarylphosphine Oxide to Phenanthroline: a Facile Approach to High‐Performance Organic Small‐Molecule Cathode Interfacial Material for Organic Photovoltaics utilizing Air‐Stable Cathodes

Cathode interfacial material (CIM) is critical to improving the power conversion efficiency (PCE) and long‐term stability of an organic photovoltaic cell that utilizes a high work function cathode. In this contribution, a novel CIM is reported through an effective and yet simple combination of triarylphosphine oxide with a 1,10‐phenanthrolinyl unit. The resulting CIM possesses easy synthesis and purification, a high T _g of 116 °C and attractive electron‐transport properties. The characterization of photovoltaic devices involving Ag or Al cathodes shows that this thermally deposited interlayer can considerably improve the PCE, due largely to a simultaneous increase in V _oc and FF relative to the reference devices without a CIM. Notably, a PCE of 7.51% is obtained for the CIM/Ag device utilizing the active layer PTB7:PC₇₁BM, which far exceeds that of the reference Ag device and compares well to that of the Ca/Al device. The PCE is further increased to 8.56% for the CIM/Al device (with J _sc = 16.81 mA cm^?2, V _oc = 0.75 V, FF = 0.68). Ultraviolet photoemission spectroscopy studies reveal that this promising CIM can significantly lower the work function of the Ag metal as well as ITO and HOPG, and facilitate electron extraction in OPV devices.     

Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cells

This paper presents an understanding of the fundamental carrier transport mechanism in hydrogenated amorphous silicon (a‐Si:H)‐based n/p junctions. These n/p junctions are, then, used as tunneling and recombination junctions (TRJ) in tandem solar cells, which were constructed by stacking the a‐Si:H‐based solar cell on the heterojunction with intrinsic thin layer (HIT) cell. First, the effect of activation energy (E_a) and Urbach parameter (E_u) of n‐type hydrogenated amorphous silicon (a‐Si:H(n)) on current transport in an a‐Si:H‐based n/p TRJ has been investigated. The photoluminescence spectra and temperature‐dependent current–voltage characteristics in dark condition indicates that the tunneling is the dominant carrier transport mechanism in our a‐Si:H‐based n/p‐type TRJ. The fabrication of a tandem cell structure consists of an a‐Si:H‐based top cell and an HIT‐type bottom cell with the a‐Si:H‐based n/p junction developed as a TRJ in between. The development of a‐Si:H‐based n/p junction as a TRJ leads to an improved a‐Si:H/HIT‐type tandem cell with a better open circuit voltage (V_oc), fill factor (FF), and efficiency. The improvements in the cell performance was attributed to the wider band‐tail states in the a‐Si:H(n) layer that helps to an enhanced tunneling and recombination process in the TRJ. The best photovoltage parameters of the tandem cell were found to be V_oc = 1430 mV, short circuit current density = 10.51 mA/cm², FF = 0.65, and efficiency = 9.75%. Copyright © 2015 John Wiley & Sons, Ltd.     

Origin of Open‐Circuit Voltage Enhancements in Planar Perovskite Solar Cells Induced by Addition of Bulky Organic Cations

The origin of performance enhancements in p‐i‐n perovskite solar cells (PSCs) when incorporating low concentrations of the bulky cation 1‐naphthylmethylamine (NMA) are discussed. A 0.25 vol % addition of NMA increases the open circuit voltage (V_oc) of methylammonium lead iodide (MAPbI₃) PSCs from 1.06 to 1.16 V and their power conversion efficiency (PCE) from 18.7% to 20.1%. X‐ray photoelectron spectroscopy and low energy ion scattering data show NMA is located at grain surfaces, not the bulk. Scanning electron microscopy shows combining NMA addition with solvent assisted annealing creates large grains that span the active layer. Steady state and transient photoluminescence data show NMA suppresses non‐radiative recombination resulting from charge trapping, consistent with passivation of grain surfaces. Increasing the NMA concentration reduces device short‐circuit current density and PCE, also suppressing photoluminescence quenching at charge transport layers. Both V_oc and PCE enhancements are observed when bulky cations (phenyl(ethyl/methyl)ammonium) are incorporated, but not smaller cations (Cs/MA)—indicating size is a key parameter. Finally, it demonstrates that NMA also enhances mixed iodide/bromide wide bandgap PSCs (V_oc of 1.22 V with a 1.68 eV bandgap). The results demonstrate a facile approach to maximizing V_oc and provide insights into morphological control and charge carrier dynamics induced by bulky cations in PSCs.     

Effects of Nonradiative Losses at Charge Transfer States and Energetic Disorder on the Open‐Circuit Voltage in Nonfullerene Organic Solar Cells

The considerable improvement on the power conversion efficiency (PCE) for emerging nonfullerene polymer solar cells is still limited by considerable voltage losses that have become one of the most significant obstacles in further boosting desired photovoltaic performance. Here, a comprehensive study is reported to understand the impacts of charge transport, energetic disorder, and charge transfer states (CTS) on the losses in open‐circuit voltage (V_oc) based on three high performing bulk heterojunction solar cells with the best PCE exceeding 11%. It is found that the champion poly[(2,6‐(4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dithiophene)‐co‐(1,3‐di(5‐thiophene‐2‐yl)‐5,7‐bis(2‐ethylhexyl)‐benzo[1,2‐c:4,5‐c′]dithiophene‐4,8‐dione))] (PBDB‐T):IT‐M solar cell (PCE = 11.5%) is associated with the least disorder. The determined energetic disorder in part reconciles the difference in V_oc between the solar cells. A reduction is observed in the nonradiative losses (ΔV_nonrad) coupled with the increase of energy of CTS for the PBDB‐T:IT‐M device, which may be related to the improved balance in carrier mobilities, and partially can explain the gain in V_oc. The determined radiative limit for V_oc combined with the ΔV_nonrad generates an excellent agreement for the V_oc with the experimental values. The results suggest that minimizing the energetic disorder related to transport and CTS is critical for the mitigation of V_oc losses and improvements on the device performance.     

Narrow‐bandgap CuIn3Te5 thin‐film solar cells

We propose CuIn₃Te₅ as a ternary semiconductor material for narrow‐bandgap thin‐film solar cells. Well‐developed CuIn₃Te₅ grains were obtained at a substrate temperature of 250 °C by single‐step co‐evaporation. The best solar cell that was fabricated using 4·0‐µm‐thick CuIn₃Te₅ layers grown at 250 °C yielded a total area efficiency of 6·92% (V_oc = 407 mV, J_sc = 33·1 mA/cm², and FF = 0·514). To clarify the loss in the device performance, the cell was compared with a standard CuInSe₂ reference cell. A band diagram of the CdS/CuIn₃Te₅ solar cell was also presented. Copyright © 2011 John Wiley & Sons, Ltd.     

Back amorphous‐crystalline silicon heterojunction (BACH) photovoltaic device with facile‐grown oxide ‐ PECVD SiNx passivation

This article reports on the integration of facile native oxide‐based passivation of crystalline silicon surfaces within the back amorphous‐crystalline silicon heterojunction solar cell concept. The new passivation scheme consists of 1‐nm thick native oxide and nominally 70‐nm thick PECVD silicon nitride. The low temperature passivation scheme provides uniform high quality surface passivation and low parasitic optical absorption. The interdigitated doped hydrogenated amorphous silicon layers were deposited on the rear side of the silicon wafer using the direct current saddle field PECVD technique. A systematic analysis of a series of back amorphous‐crystalline silicon heterojunction cells is carried out in order to examine the influence of the various cell parameters (interdigital gap, n‐doped region width, ratio of widths of p, and n‐doped regions) on cell performance. A photovoltaic conversion efficiency of 16.7 % is obtained for an untextured cell illuminated under AM 1.5 global spectrum (cell parameters: V_OC of 641 mV, J_SC of 33.7 mA‐cm ^{− 2} and fill factor of 77.3 %). Copyright © 2014 John Wiley & Sons, Ltd.     

Structural Origins for Tunable Open‐Circuit Voltage in Ternary‐Blend Organic Solar Cells

Ternary‐blend bulk‐heterojunction solar cells have provided a unique opportunity for tuning the open‐circuit voltage (V_oc) as the “effective” highest occupied molecular orbital (HOMO) or lowest unoccupied molecular orbital (LUMO) energy levels shift with active‐layer composition. Grazing‐incidence X‐ray diffraction (GIXD) measurements performed on such ternary‐blend thin films reveal evidence that the two polymer donors interact intimately; their ionization potentials are thus reflections of the blend compositions. In ternary‐blend thin films in which the two polymer donors do not interact physically, the polymer donors each retain their molecular electronic character; solar cells constructed with these ternary blends thus exhibit V_ocs that are pinned to the energy level difference between the highest of the two lying HOMO and the LUMO of the electron acceptor. These observations are consistent with the organic alloy model proposed earlier. Quantification of the square of the square‐root differences of the surface energies of the components provides a proxy for the Flory–Huggins interaction parameter for polymer donor pairs in these ternary‐blend systems. Of the three ternary‐blend systems examined herein, this quantity has to be below 0.094 in order for ternary‐blend solar cells to exhibit tunable V_oc.     

The Origin of the High Voltage in DPM12/P3HT Organic Solar Cells

Organic solar cells made using a blend of DPM12 and P3HT are studied. The results show that higher V_oc can be obtained when using DPM12 in comparison to the usual mono‐substituted PCBM electron acceptor. Moreover, better device performances are also registered when the cells are irradiated with sun‐simulated light of 10–50 mW cm^?2 intensity. Electrochemical and time‐resolved spectroscopic measurements are compared for both devices and a 100‐mV shift in the density of states (DOS) is observed for DPM12/P3HT devices with respect to PCBM/P3HT solar cells and slow polaron‐recombination dynamics are found for the DPM12/P3HT devices. These observations can be directly correlated with the observed increase in V_oc, which is in contrast with previous results that correlated the higher V_oc with different ideality factors obtained using dark‐diode measurements. The origin for the shift in the DOS can be correlated to the crystallinity of the blend that is influenced by the properties of the included fullerene.     

Aligning Single‐Walled Carbon Nanotubes By Means Of Langmuir–Blodgett Film Deposition: Optical,Morphological, and Photo‐electrochemical Studies

An alkoxy‐substituted poly(phenylene thiophene) is used in order to suspend single‐walled carbon nanotubes in an organic solvent. The suspension is spread on the air–water interface of a Langmuir trough and the floating film is characterized by means of Brewster angle microscopy and UV‐visible reflection spectroscopy and the compression isotherm is recorded. The polymer/carbon‐nanotube blend is transferred onto different substrates using the Langmuir–Blodgett technique. AFM measurements indicate the formation of globular structures for the samples transferred at low surface‐pressure values and a tubular morphology for high‐pressure‐deposited samples. AFM analysis is repeated on a sample exposed to soft X‐rays for about 5 h and a highly organized structure of bundles of carbon nanotubes rises up. Samples with different numbers of layers are transferred onto ITO substrates by means of the Langmuir–Blodgett method and are tested as photocathodes in a photo‐electrochemical cell. A V_oc of 0.18 V, an I_sc of 85.8 mA, FF of 40.0%, and η of (6.23 × 10^?3)% are obtained.     

Composition‐Tuned Wide Bandgap Perovskites: From Grain Engineering to Stability and Performance Improvement

Wide bandgap (WB) organic–inorganic hybrid perovskites (OIHPs) with a bandgap ranging between 1.7 and 2.0 eV have shown great potential to improve the efficiency of single‐junction silicon or thin‐film solar cells by forming a tandem structure with one of these cells or with a narrow bandgap perovskite cell. However, WB‐OIHPs suffer from a large open‐circuit voltage (V_oc) deficit in photovoltaic devices, which is associated with the phase segregation of the materials under light illumination. In this work the photoinstability is demonstrated and V_oc loss can be addressed by combining grain crystallization and grain boundary passivation, achieved simultaneously through tuning of perovskite precursor composition. Using FA_0.17Cs_0.83PbI_3–xBr_x (x = 0.8, 1.2 1.5, and 1.8), with a varied bandgap from 1.72 to 1.93 eV, as the model system it is illustrated how precursor additive Pb(SCN)₂ should be matched with a proper ratio of FAX (I and Br) to realize large grains with defect‐healed grain boundaries. The optimized WB‐OIHPs show good photostability at both room‐temperature and elevated temperature. Moreover, the corresponding solar cells exhibit excellent photovoltaic performances with the champion V_oc/stabilized power output efficiency reaching 1.244 V/18.60%, 1.284 V/16.51%, 1.296 V/15.01%, and 1.312 V/14.35% for WB‐OIHPs with x = 0.8, 1.2, 1.5, and 1.8, respectively.     

Chemically Controlled Reversible and Irreversible Extraction Barriers Via Stable Interface Modification of Zinc Oxide Electron Collection Layer in Polycarbazole‐based Organic Solar Cells

A spin‐cast method is presented for the formation of phosphonic acid functionalized small molecule layers on solution‐processed ZnO substrates for use as electron collecting interlayers in organic photovoltaics. Phosphonic acid interlayers modify the ZnO work function and the charge carrier injection barrier at its interface, resulting in systematic control of V _OC in inverted bulk heterojunction solar cells. Surface modification is shown to moderate the need for UV light‐soaking of the ZnO contact layers. Lifetime studies (30 days) indicate stable and improved OPV performance over the unmodified ZnO contact, which show significant increases in charge extraction barriers and series resistance. Results suggest that enhanced stability using small molecule modifiers is due to partial passivation of the oxide surface to molecular oxygen adsorption. Surface passivation while maintaining work function control of a selective interlayer can be employed to improve net efficiency and lifetime of organic photovoltaic devices. The modified cathode work function modulates V _OC via static energetic barriers and modulates contact conductivity by creating reversible and irreversible S‐shape current‐voltage characteristics as a result of kinetic barriers to charge transport.     

Elucidating the Origins of Subgap Tail States and Open‐Circuit Voltage in Methylammonium Lead Triiodide Perovskite Solar Cells

Recombination via subgap trap states is considered a limiting factor in the development of organometal halide perovskite solar cells. Here, the impact of active layer crystallinity on the accumulated charge and open‐circuit voltage (V_oc) in solar cells based on methylammonium lead triiodide (CH₃NH₃PbI₃, MAPI) is demonstrated. It is shown that MAPI crystallinity can be systematically tailored by modulating the stoichiometry of the precursor mix, where small quantities of excess methylammonium iodide (MAI) improve crystallinity, increasing device V_oc by ≈200 mV. Using in situ differential charging and transient photovoltage measurements, charge density and charge carrier recombination lifetime are determined under operational conditions. Increased V_oc is correlated to improved active layer crystallinity and a reduction in the density of trap states in MAPI. Photoluminescence spectroscopy shows that an increase in trap state density correlates with faster carrier trapping and more nonradiative recombination pathways. Fundamental insights into the origin of V_oc in perovskite photovoltaics are provided and it is demonstrated why highly crystalline perovskite films are paramount for high‐performance devices.