基于MEMS技术的微流体混合器及相关技术

介绍了基于MEMS技术的微流体混合器及相关技术,给出了各种微流体混合器的结构、原理和特点,同时对微管道中流体混合的仿真、实验技术以及微管道中微量流体混合程度的评价方法等作了概述。     

一种非对称结构微流体混合器的设计与分析

微流体混合器可以用于不同流体之间的混合与反应,其与化学传感器结合构成的化学分析测试系统,具有灵敏度高、响应时间短和稳定性好的特点。在微电子机械加工技术的基础上,设计了一种新型的、具有非对称分离重组结构的微流体混合器,并应用有限元方法建立了仿真模型,讨论了在不同雷诺数(Re=10~80)下,通道几何结构参数对微混合器内的流体流动特性和混合效率的影响。研究结果表明,微流体在该混合器内形成了扩展涡、分离涡和迪恩(Dean)涡,实现了涡系的叠加和强化,加大了流体间的扰动,增加了流体的接触面积,从而大大增强了混合效率。     

基于PDMS的静态微流体混合器的制作与仿真

通过采用模塑法制成一种基于聚二甲基硅氧烷(PDMS)的静态微流体混合器.根据流体动力学理论对其进行了理论分析,并给出了两种流体混合的仿真分析结果.对以数值模拟为依据制作的微流体混合器进行了水与红墨水的混合实验,获得了相吻合的结果.     

一种挡板结构被动式微混合器的设计与仿真北大核心

基于在微通道内设置障碍物可以提高混合效率的方法,以T型方波通道微混合器为基础,设计了一种新型的、具有挡板结构的被动式微混合器,并采用有限元方法建立了仿真模型,分析比较了T型直通道微混合器、T型方波通道微混合器和具有挡板结构的T型方波通道微混合器在不同雷诺数（Re）下器件内流体的流动特性和混合效率。研究结果表明,具有挡板结构的T型方波通道微混合器在挡板阻塞比为1/4时具备最优的综合性能,也即在较宽Re值范围（5～60）内可实现流体的快速、高效混合,混合效率高于95%。     

压电基片上集成微通道数字微流体微混合器研究

微流体在压电基片上输运往往偏离声表面波传播方向,尤其是当压电基片表面疏水层不很均匀时,给微流体诸如混合等操作带来不便。在1280旋转Y切割X传播方向的LiNbO3基片上研制了集成有聚二甲基硅氧烷为材料T型微通道的微混合器,压电基片上采用光刻工艺制作相互垂直叉指换能器及反射栅。待混合的两微流体采用微量进样器分别进样到声路径微通道中,依次在两叉指换能器上加RF电信号,它激发的声表面波驱动其声路径上微通道中的微流体沿微通道输运、合并,并快速混合。对2μl水-2μl蓝色染料微流体和2μl甘油-2μl蓝色染料微流体进行混合实验,结果表明,声表面波的作用可以提高微通道中微流体的混合速度,且混合程度更高。     

基于声表面波技术数字微流体微混合器研究

报道了在128°旋转Y切割X传播方向LiNbO3基片上研制了数字微流体微混合器.它由压电基片上叉指换能器和反射栅组成,当由功率放大器放大后的射频电信号加到叉指换能器时,它激发的声表面波经微流体后转化为径向表面波驱动微流体,使其与同一路径上的另一微流体合并,在反射栅反射回的声表面波共同作用下,加速微流体内分子扩散运动,提高了微流体混合效率.采用1 μL的水和1 μL红墨水以及1 μL的红墨水和1 μL甘油各自进行混合实验,结果表明:在声表面波作用下,微混合器能快速混合微流体.为片上实验室提供了廉价、易集成的微混合单元,具有潜在的应用价值.     

被动微混合器的研究进展(英文)

综述了被动微混合器的混合原理、结构、微制作技术以及在数值仿真计算等方面的研究进展。着重讨论了几种主要被动微混合原理,如多层流、混沌对流、分裂-重合、流体弯曲和压缩以及循环流动。重点分析了近年来低雷诺数下高混合效率的复合式微混合器。复合式微混合器利用其他简单的外界作用来提高其混合效率,诸如施加离心力、采用几何压缩和三个入口结构,或利用多入口结构,使其中的流体产生周期性的流动。指出随着对低雷诺数和高黏度要求的不断提高,SAR型复合式微混合器成为更为广泛的一个研究方向,其内部的分裂-重合结构单元能够使流体产生旋转,同时通过采用几何压缩结构,缩短扩散长度.从而大大提高了流体的混合效率,但同时也提高了对微制作技术的要求。     

微气泡执行器强化微混合的实验研究

微尺度流动的雷诺数(Re)比较低,其混合主要通过扩散来完成,因此需要较长的距离与时间才能混合均匀。为实现微尺度低Re数流体的快速均匀混合,以甲醇及染色甲醇为工质,采用脉冲电压激励微铂膜产生可控气泡,并以气泡周期性胀缩产生的脉冲压力为动力源,研究脉冲压力横向扰动产生的混沌流对微通道内流动混合的影响。结果表明:脉冲压力横向作用使流体的交界面产生了强烈的卷曲拉伸,有效地强化了混合,该微混合器能够在毫米级混合长度及毫秒级混合时间内快速均匀混合,脉冲频率越高,混合效果越好。本研究结果为解决微尺度下低Re数流动混合难题提供了一种有效的崭新手段。     

微混合器研究进展

微混合器作为微全分析系统重要的组成部分,是目前微机电系统(MEMS)领域内的研究热点。文章介绍了微混合器的设计要求与目标、加工方法与材料的选择、微混合的特点与混合机理。微混合器一般可分为主动混合器与被动混合器,基于此分类方法,文章综述了微混合器的国内外研究现状,并讨论了目前研究中存在的一些问题,展望了微混合器的研究前景。     

基于狄恩流的微混合器的研究

所设计的微混合器是一种基于狄恩流的被动式混合器,该混合器的结构特点是由多个不同半径的弯曲管道双螺旋而成,中部通过"S"形管道将输入管道和输出管道相连。首先分析了狄恩流形成的机理及特点,再通过流体计算软件CFD-ACE+三维模拟并分析了不同流速对二次流强弱以及混合程度的影响,最后利用微细加工技术制作微混合器,罗丹明B溶液与去离子水用作待混合液体,利用Image J软件获取混合图像的灰度值来分析混合器的性能。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-