高频地波雷达电离层干扰抑制研究

高频地波雷达探测海洋状况和跟踪移动目标时,电离层干扰严重影响了雷达的工作性能.阐述了电离层干扰的来源,分析了电离层干扰的时间和空间特性,指出其在雷达相干积累时间之内在空间上具有稳定性,结合高频地波雷达OSMAR系统的阵列结构,采用分段自适应旁瓣对消的处理方法来抑制电离层干扰.对实测数据处理的结果表明该方法能够有效地抑制电离层干扰,改善海洋回波一阶峰的信噪比,从而提高了雷达对海洋的探测性能.     

一种天波超视距雷达自适应波束形成方法

天波超视距雷达利用自适应波束形成技术抑制短波干扰以增强探测性能,但是在相干处理间隔内电离层运动通常会使干扰呈现明显的空间非平稳性,增加了自适应处理的难度.由于在距离-多普勒域上进行自适应波束形成时电离层的影响显著降低,文中提出了在距离-多普勒域上对雷达阵列接收信号进行自适应波束形成的方法.实测数据处理表明,该方法能有效地克服干扰的非平稳性以抑制干扰,而且易于工程实现.     

超视距雷达目标距离的换算方法

超视距雷达天线辐射的信号能量传播的路径是弯曲的,即由地面斜射至电离层,经电离层反射后再折向地面。应用脉冲时延法测出的目标距离并不是目标至雷达的真实距离,而是传播路径的长度。定义这个长度为射线距离。目标至雷达的地面距离才是目标的真实距离。真实距离是根据射线距离和电离层参数换算出来的。换算的模式与工作频率、电离层等离子体频率、电离层底部高度、半厚度以及射线的仰角等参数有关,十分复杂。尤其是射线仰角值不能直接求出,给换算带     

高频地波雷达的电离层杂波识别新试验

为了验证电离层杂波干扰的存在及研究其对高频地波雷达性能的影响,武汉大学电波传播实验室在浙江舟山东沙试验基地利用高频地波雷达完成了电离层杂波干扰识别新试验.试验采取改变地波雷达发射天线结构即改变发射天线的波束指向,使得电磁波垂直向上发射,进行电离层垂直探测试验;同时也有部分能量向海洋传播,从而获得海面Bragg散射回波.与此相对应地采用垂直极化的三元八木天线向海洋表面发射电磁波,同时获取海洋回波与电离层杂波.详细介绍了试验过程并对实测结果进行了初步分析,并介绍了新近研制的便携式高频地波雷达OSMAR-S的系统结构及其工作参数.     

高频地波雷达中电离层杂波的自适应抑制

首先分析了高频地波雷达中电离层杂波的类型，并给出了电离层杂波的仿真结果。在此基础上，给出了利用相参旁瓣对消滤波器对电离层杂波进行自适应抑制的方法。利用辅助天线输出中的干扰成分，自适应的调整其加权系数，最大程度的估计出主天线输出中的干扰。然后在主天线的输出中减去这个估计出的干扰。最后，对现有的相参旁瓣对消滤波器进行改进，并且给出了改进的相参旁瓣对消滤波器的抑制结果。     

二维阵列超视距雷达的选频方法

该文提出一种通过预测到达任务区域路径信噪比,自适应地为天波超视距雷达选择工作频点的方法。利用2维阵列的俯仰维分辨能力,克服了传统方法无法从返回散射电离图中分离多模/多径信号的缺陷。雷达通过电离层探测设备和2维接收阵列,获取返回散射数据、环境干扰数据和电离层状态数据。然后利用电离层模型和状态数据,推算各频点对任务区域的照射路径。运用2维自适应波束形成抑制环境干扰噪声,并处理返回散射数据以预测各路径回波强度。最后计算各频点路径在脉冲压缩后的信噪比,选择信噪比最大值的频率为最优工作频点。     

超视距雷达的数据处理

一、引言后向散射超视距雷达(以下简称超视距雷达或OTH-B雷达)与电波直接指向电离层的微波雷达概念不大相同。超视距雷达波束指向电离层一定区域,只要系统波束仰角和工作频率选择恰当,电离层反射的无线电波能传播到位于雷达视线以外的目标。目标散射这一电波能量,而其中一部分又经电离层返回,而被OTH-B雷达天线所接收。其工作原理如图(1)所示。由此可见,OTH-B雷达能发现雷达视线以下空间区域的目     

无载波脉冲探地雷达天线及其实验研究

简要地概述了设计无载波脉冲探地雷达天线的理论依据和方法，并讨论了天线的类型和技术现状。对一种比较实用的无载波脉冲探地雷达天线的近地面工作特性进行了实验测试。结果表明，天线的性能在一定程度上受土壤特性的影响，天线向地下传输的能量与天线距离地面的高度ｈ有很大关系。在ｈ≤４０ｃｍ时，随着天线高度ｈ的升高，天线向地下传输的能量急剧地减小。借助于该实验，还对天线辐射出的无载波脉冲在土壤中的传播特性进行了研究     

无载波脉冲探地雷达天线及其实验研究

简要地概述的设计无载波脉冲探地雷达天线的理论论据和方法，并讨论了天线的类型的技术现状，对一种比较实用的无载波脉冲探地雷达天线的近地面工作特性进行了实验测试。结果表明，天线的性能在一定程度上受土壤特性的影响，天线向地下传输的能量与天线距离地面的高度ｈ有很大关系。在ｈ≤４０ｃｍ时，随着天线高度ｈ的升高，天线向地下传输的能量急剧地减小。借助于该实验，还对天线辐射出的无载波脉冲在土壤中的传播特性进行了研究     

一种应用遗传算法的阵列天线共址干扰抑制技术

针对有限大平台部署多种传感器导致的严重的自干扰问题,提出了一种应用遗传算法实现的阵列天线共址干扰抑制技术。首先针对同平台上的阵列天线和其他天线建立了辐射和接收模型,然后将辐射特性和接收机抗干扰特性分别抽象为最优化问题的目标函数和约束条件,最后通过遗传算法进行最优化求解。该技术在不同辐射角度时能抑制共址干扰,具有一定的工程实用价值。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.