BP神经网络在车辆组合导航中的应用研究

针对车辆GPS/DR组合导航系统在GPS信号被遮挡时无法完成DR零点更新的问题,提出了基于BP神经网络的DR位置误差预测模型来解决该问题。在GPS有效时,该算法采用基于平稳小波变换的扩展卡尔曼滤波器对GPS/DR信号进行数据融合得到车辆实时的精确位置,与经平稳小波变换软阈值模平方去噪法处理的DR位置数据进行平稳小波多尺度比较获得DR位置误差;然后用BP神经网络建立DR位置误差预测模型,为了提高所用网络的泛化能力,采用了贝叶斯正则化规则训练网络。在GPS失效时,利用已建立的预测模型预测DR位置误差来修复DR位置数据,实现车辆行驶在复杂路径下的实时精确导航定位。仿真表明,该算法对车辆GPS/DR组合导航系统有效。     

车辆GPS远程监控系统开发

为了解决车辆信贷风险控制、车辆远程位置监控、远程故障诊断、车辆行驶区域设定等问题,研究和开发了GPS远程监控系统。采用＂远程控制中心＋GPS终端＂的模式构建,整车上的GPS终端通过CAN总线与发动机ECU进行通信,实现对发动机信息的采集以及响应控制中心的远程控制命令。目前该系统已成功应用于某型号的电控发动机,实现了位置监控、整车行驶路线设置、发动机油耗统计、发动机信息远程诊断、远程坡行控制等功能。     

动态背景下运动车辆的检测与跟踪研究

为实现对车载设备视频图像中车辆的识别和跟踪,针对图像中的运动目标和动态背景,提出了一种基于特征学习的目标检测和超像素跟踪算法.该算法首先对训练图像进行HOG特征提取,并利用AdaBoost算法得到强分类器.利用强分类器对采集的图像进行车辆检测,从而确定搜索区域.结合对搜索区域的超像素分割结果,采用均值漂移聚类算法实现车辆识别与跟踪.实验结果表明,该算法可以很好地实现视频序列中的车辆识别,提高了目标跟踪的实时性.     

基于改进高斯模型的车流量检测算法

提出了一种基于改进单高斯模型的车辆检测与流量统计算法,该算法采用改进的单高斯模型对移动目标进行检测,然后选用HSV颜色空间抑制阴影,提高了目标提取的准确率,最后,按车道分别设置相应的虚拟区域,以实现车流量的统计工作.为验证算法的有效性,在标准测试视频上进行了对比实验,实验结果表明,该算法能够快速地提取车辆目标,且具有较高的车辆识别率,有一定的实用价值.     

基于摄像机标定的车辆速度检测方法

分析了摄像机标定技术的原理以及常用摄像机标定方法,针对高速公路的实际情况以及应用需求,提出了基于平面单应性矩阵的摄像机标定算法,通过摄像机标定对检测区域进行网格划分,从而进行车辆速度的检测。经实验测试,该方法易于实现,且具有较高的检测精度,平均测速准确率达90%以上。     

基于北斗RDSS的GPS区域差分技术

本文提出了一种基于北斗RDSS的GPS区域差分技术的实现方案,该方案克服了差分GPS技术受到参考站和用户站之间距离的限制。本系统中基准型GPS接收机伪距修正数的计算、用户接收机导航解算所需的卫星星历数据、时间数据、伪距信息和伪距修正数的提取以及差分算法实现和接收机定位算法全部在DSP＋FPGA中实现。通过试验数据分析比较可见,采用基于北斗RDSS的GPS区域差分技术,对GPS导航定位精度有明显提高,该技术为未来实现高精度GPS导航定位有一定的参考价值。     

基于GPS/BD-2的军队车辆监控系统设计

针对军队中如何对军车进行有效监控和调度,提高战时物资投递效率的问题,提出了一种基于GPS/BD-2的军队车辆监控系统的设计。该系统采用信息化手段,依托北斗二代和GPS组合定位系统,设计了GPS/BD-2车载终端、信息处理服务器和指挥调度终端三部分,实现了车辆身份与入网管理、车辆管理、车辆监控、报警管理、统计查询、系统管理等业务需求。本系统提供更加精准的定位服务,满足了信息化条件下军队车辆保障的需求,促进部队车辆建设安全、科学发展。     

车辆导航定位仿真试验系统研究

研究车辆导航定位仿真算法及实现方法,为车辆虚拟驾驶等离线试验研究提供定位数据具有重要的现实意义.通过GPS卫星星座的运动仿真、最佳定位星座的选取和仿真接收机的设计,将车辆运动仿真得到的车辆位置信息转换为GPS信号输入到虚拟驾驶模块,实现GPS车辆导航定位仿真实验.该系统所输出的虚拟定位数据能够满足离线试验对数据的要求.     

GPS/北斗组合卫星导航系统快速选星算法

为实现GPS/北斗组合卫星导航系统的快速选星,提出一种基于几何布局的快速选星算法。根据最优选星方案的卫星分布特点,利用卫星高度角和方位角信息实现卫星的区域划分,应用代价函数法对中仰角区域的卫星进行筛选,得到最终的选星方案。与最优选星算法相比,该算法计算量明显减小;仿真结果表明,该算法能将几何精度因子(GDOP)控制在小于2.5的范围内,具有较好的选星效果。综合考虑算法复杂度和选星效果,基于几何分布的快速选星算法能够满足航空航天等对精度和实时性要求较高的领域的需求。     

基于最优参数搜索的车辆中网识别方法研究

目前国内外车型识别方法中基于中网区域特征的研究较少,且分类识别的效率和精度较低。该文在分析中网格栅区域结构特征、中网窗口形状特征及区域纹理特征的基础上,提出基于最优参数搜索的改进型C参数的支持向量分类(C-SVC)车辆中网分类识别方法,该方法采用双角度约束以提高分类的效率和精度,即一方面设计基于马氏距离和a-原则对样本数据进行优化分选,并结合加权判别算法加快支持向量机的训练测试速度,以提高算法泛化效率;另一方面在核函数参数设定过程中,设计了基于先验知识的迭代最优参数搜索算法,以提高分类器的分类识别精度。实验表明,上述车辆中网识别方法检测准确率达到97.53%,具有精度高、误检率低的优点,同时极大优化分类识别效率,能够满足识别分类的实时性要求。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.