一种盲签名电子现金系统方案的设计与实现

回顾了电子现金的研究现状,并对几种常见方案进行了分析。基于盲签名在线电子现全系统,设计了一种基于可信第三方的电子现金系统。方案除具有一般电子现金系统的匿名性和可控性外,增加了电子现金跟踪和电子现金所有者跟踪双重功能。使用了部分盲签名技术,减小了数据库大小,提高了查找速度,在安全性和可控性方面得到了加强和提高。     

基于椭圆曲线的多银行电子现金方案

基于电子现金的电子支付是电子商务系统的核心,但是目前还处在研究阶段。利用椭圆曲线密码体制（ECC）的优点,构建了一个多银行参与发行现金的简便易行的电子现金方案,并且将电子现金的可分性思想引入,使得该方案更能满足人们的需求。设计该方案思想源自Brands方案的限制性Schnorr盲签名,其安全性基于椭圆曲线离散对数的安全性。     

基于ElGamal签名的电子现金体制

简要讨论了电子现金的特点,并在EIGamal签名、承诺方案和ZK的基础上构造了一种电子现金方案,最后对此方案的安全性作了说明。     

群签名在电子现金中的应用

随着电子商务的发展,选择一种合适的电子支付方式变得越来越重要。电子现金与其他支付方式相比有很多突出的优点,例如离线性,匿名性等。因此电子现金被认为是电子商务中最理想的支付方式。然而在应用电子现金得到广泛应用前有一个难题必须解决,那就是当发生二次支付或者是其他争议时,电子现金或者是使用电子现金的客户是可追踪的。文中提出了一个基于群签名的电子现金方案来解决电子现金系统中的可追踪性。在所提出的方案中,利用群签名的特性成功的解决了可追踪性这一难题。     

一种改进的可控制匿名性的离线电子现金系统

利用RSA盲签名算法和Schnorr一次数字签名算法,对Juels的电子现金方案[1]做了改进,提出一个新的可控制匿名性的电子现金系统。在用户向商家支付电子现金时,用户利用自己的秘密密钥对其将要支付的信息进行数字签名,解决了原方案中TTP(可信第三方)能冒充用户去花费用户的电子现金、他人获得合法用户的电子现金可盗用的问题,而且TTP使用公钥数字签名算法对可信标记签名,进一步增强了系统的安全性。最后对系统的安全性进行了分析。     

无可信第三方的离线电子现金匿名性控制

利用可信第三方的电子现金匿名性撤销方案增加了系统负担,并且可信第三方的跟踪是不确定的.最近Kulger等提出了无可信第三方的可审计跟踪的电子现金方案,但需要用户事后审计检查.结合Camenisch等的加标记跟踪及证明方法和Abe等部分盲签名方案,本文提出了一个无可信第三方的电子现金匿名性控制方案.方案中银行只在需要跟踪时要求用户打开标记,从而进行用户和钱币的跟踪,这样跟踪时用户是知道的,因此简便实用地解决了无可信第三方情况下电子现金匿名性控制问题.     

基于零知识证明的电子现金

在零知识证明系统的基础上提出了一种不同于以往的构造电子现金的方案。它不基于特定的盲签名方案和零知识证明系统,从而提供了基于任意零知识证明系统和盲签名方案构筑电子现金的方法。在合理的密码学假设前提下,证明了方案的安全性。     

典型电子现金系统的分析及其安全需求

文章设计了一种电子现金系统,关键是对安全性、效率、成本等进行综合考虑。从这些方面入手,论文分析了三种典型的电子现金系统—D.Chaum方案、S.Brands方案和T.okamoto方案。然后,结合匿名通信协议,提出如何更好地满足顾客利用公开网络进行安全通信的需求。     

基于零知识证明签名和强RSA问题的可分电子现金

针对现有的基于二次剩余的可分电子现金方案存在二叉树深度较大、不同支付节点可链接等弊端,在零知识证明签名和强RSA问题的基础上,首次将群签名的思想引入到离线可分电子现金中,提出了一种新型离线可分电子现金支付系统.该系统克服了只能将父节点分成2个子节点的限制,且同一电子现金分割而得的不同节点具有不可链接性.     

基于ECC的限制性盲签名电子现金支付的研究

椭圆曲线密码体制(ECC)构建的电子现金系统具有更短的密钥长度与更高的计算效率,提出了基于ECC的限制性部分盲签名及离线电子现金方案,实现系统参数、取款协议、支付协议和存储协议的研究。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-