共查询到17条相似文献,搜索用时 140 毫秒
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印制电路板层数越来越高,在压合生产过程中出现铜皱的现象越来越频繁。本文主要从铜皱的表现形式入手,通过现象铆钉位铜皱、熔点位铜皱、组合夹具引起铜皱、板面中心铜皱四个方面来研究探讨压合铜皱是如何产生的,制定什么方法来预防,进而提高品质。 相似文献
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挠性电路板(FPCB)是用挠性基材制成,其对于铜箔的需求也呈逐年上升趋势,下面就FPCB所需的铜箔的生产工艺做一个简单的探讨。
铜箔的生产过程分为四个工序,溶铜工序——生箔工序——表面处理工序——分切包装工序。
溶铜工序主要就是将铜料溶解成硫酸铜溶液,并经一系列过滤净化,制备出成分合格、纯净度很高的电解液,电解液质量的好坏,直接影响着铜箔产品品质的好坏,必须严格控制溶铜造液过程所用原辅材料,还要严格控制电解液制备的生产设备和操作过程。
生产普通铜箔的电解液,成分比较简单,铜离子、硫酸是主要成分,再添加明胶和氯离子等添加剂。 相似文献
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随着背板厚度和尺寸的不断增加,压合过程制作难度也随之不断增加,其中以压合空洞及其导致的渗铜问题尤为突出,本文通过对问题大背板渗铜表观、切片及影响因素进行分析,最终确定渗铜的直接原因为层间介质树脂空洞,通过优化叠板层数、排板方式、优化压板参数匹配材料压合要求、采用排板时加铝片缓冲及使用厚度均匀性好的小钢板改善局部失压,最终降低了大背板的渗铜报废率,提高了大背板制作能力。 相似文献
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功率混合集成电路键合强度控制研究 总被引:1,自引:0,他引:1
通过引入铜过渡键合垫片,取消了金-铝键合系统,改用铝-铝键合,以提高功率混合集成电路内引线键合强度的可靠性等级,满足某些特殊领域的要求。运用SPC控制,对键合工艺进行了有效控制,使功率混合集成电路内引线键合强度和键合工序能力得到了较大的提高。 相似文献
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低流动度半固化片的压合技术研究及其产品应用开发 总被引:1,自引:1,他引:0
随刚挠板、阶梯板与金属基散热板需求量的增大,相对于纯胶片更为便宜的低流动度半固化片的使用量增多,但由于此类半固化片的流胶量较低而往往容易导致压合白斑。本文对比试验了图形分布、半固化片数量、层压辅助材料、拼板工艺边设计及层压工艺参数等的影响,提出了低流动度半固化片的压合模型,此法有效避免了必须采用低流动度半固化片与FR-4半固化片混压或必需采用额外压合辅材的业界做法;试验并成功采用陪板填充阶梯槽的独特的简单工艺,避免了业界报道的操作相对复杂的叠板方式,可成功避免板凹和板件局部变形的质量问题,希望能对PCB制造业同行有所帮助。 相似文献
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Organic wrinkle structures are investigated as an internal scattering layer for the fabrication of highly efficient organic light-emitting diodes (OLEDs). The solution-processed wrinkle structures are planarized with a high-index layer, resulting in a reduced surface roughness and optical haze simultaneously. The OLED device including the wrinkle structures achieved external quantum efficiency (EQE) of 24.2%, corresponding to a 1.24 time enhancement with respect to that of a control device having no internal scattering layer. By attaching a micro lens array (MLA) or a half ball lens (HBL) on the external surface of the substrate, the proposed device exhibits an EQE of 30.5% (1.56 time enhancement) and 41.8% (2.14 time enhancement), respectively. Randomness of the distributed wrinkle structures is shown to provide additional benefits of reduced angular spectral distortion and Lambertian-like emission properties. Trans-scale optical simulation combining wave-optics and the geometrical effect are used for the quantitative analysis of the emission characteristics of the device. 相似文献
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基于化学机械动力学的碱性铜抛光液平坦化机理研究 总被引:1,自引:1,他引:0
The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing (CMP) process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole(BTA),by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization. 相似文献