基于无线传感器网络的智能家居系统设计

无线传感器网络通过集成化的微型传感器实时监测、感知和采集各种环境信息;而智能家居系统的设计是通过一个相当于住宅神经的家庭控制网络来控制家庭内部各个家电设备;文章把传感器网络引入到智能家居中,设计了一个基于传感器网络的家居设备监测控制管理系统。文章对系统的各个模块给出了具体的设计方案,并介绍了系统的实现流程。     

基于GSM模块的远程控制和报警系统

介绍了一种基于GSM/GPRS网络的无线远程控制和报警系统,详细阐述了系统的组成结构和软硬件设计。该系统采用GSM/GPRS模块发送接收短消息和彩信,从而实现对家居安全状况的远程监控。选用多种传感器采集家居信息,通过无线收发模块传递到主控制器,运用信息融合技术,获得可靠的报警信息。业主接到报警信息后,回复短信可以控制和处理现场情况,达到保证家居安全和防盗的目的。     

基于多种无线技术融合的智能家居控制平台

设计了一种基于多种无线技术融合的智能家居控制平台,整个系统用了四种无线方式来进行数据传输和通信,ZigBee、蓝牙、web和GSM,实现了控制家用电器的多种方式.该系统使用了ZigBee自动组网的方式构建家居内部网络,以蓝牙,web和GSM短信为控制方式的通信手段,通过三种无线方式控制家庭电器..     

基于Zigbee的实时能源监控和控制系统

智能家居技术的使用在家居或建筑节能方面具有很大的潜力。本文提出一个基于Zigbee的能源管理系统。该系统由两个主要组件构成,无线传感网络和智能家居网关。通过智能家居网关,无线传感器感知和传输电力数据,远程监控和控制家用电器;通过网络和移动设备,节能系统允许用户监测和控制家用电器。     

基于STM32的智能家居无线激光报警系统

以STM32为核心,设计了智能家居无线激光报警系统。该系统由单片机控制模块、GSM无线发送接收模块、矩阵键盘模块、声光报警模块、热释电激光传感器模块组成。通过热释电激光传感器采集相关信号,单片机STM32经过处理后控制声光报警模块发出报警信号,并将报警信号通过GSM短信模块发送至用户手机上,实时反馈报警地点的情况。该系统利用广泛的移动网络,不需要组建专用网络和维护网络,较传统的监控系统有着独特的优势。     

一种基于ZigBee及GSM混合网络的轻智能家居安防系统设计

针对传统智能家居成本高,系统复杂,安装维护困难,未实现个性化定制等问题,设计了一套基于ZigBee及GSM网络的轻智能家居安防系统,包括系统整体架构、实现方案以及多样化远程监控方式。该系统采用ZigBee网络与GSM网络相结合技术实现了对家居设备进行信息采集、指令控制、远程监控的功能,可广泛应用于防火防盗、安全监控和安防等领域。     

智能家居系统中无线传感器网络的设计

介绍了ZigBee无线传感器网络,将ZigBee技术应用到智能家居系统中。提出了一种以ZigBee技术为基础的智能家居系统设计方案。阐述了无线传感器网络的总体构成,以CC2430无线芯片为核心,选取了合适的ZigBee模块进行了硬件电路设计。研究并分析了ZigBee技术。设计并实现了串口收发程序,传感器程序,以及节点间的无线通信程序,并根据ZigBee协议,使节点组成树状网络,最终实现系统的监测与控制。结果表明,本系统运行稳定,达到了设计目的,有着广泛的应用前景。     

智能家居控制系统的设计

主要研究了如何基于上海未来伙伴机器人有限公司的创新套件与自制单片机控制系统设计一套智能家居控制系统,将结构部件、连接部件和传动部件以及传感器完美得组合在一起,通过能力风暴控制器、单片机系统、无线模块、GSM模块等,实现了家居的无线控制、远程控制、温控、安防控制等功能,使人们的生活更加便捷、安全、舒适。     

无线智能家居网络系统设计与应用

本文设计了一种以ZigBee和GSM/3G网络技术为核心的低功耗高性能的无线智能家居网络系统,并将其用于家居的环境监测、安防系统和家电的控制管理。该系统工作性能稳定,在数据采集和传输等方面达到了预期设计目标,尤其是在简化设备安装布线,提高系统移动性和便携性以及远程传输和应用管理方面效果十分显著。     

智能家庭监控报警系统的设计

设计了智能家庭监控报警系统以实现对家居安全的实时监控。系统采用了单片机技术、WIFI、蓝牙和GSM/GPRS网络进行设计,能够通过手机接受报警信息和远程指令;同时引入多种传感器和继电器实现了对家中基本情况、安全隐患等的远程控制。实验结果表明,所设计的系统能够实现安全、便捷的智能家居远程监控,具有较高的可用性和可靠性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its