Slope RMS在三镜支撑设计与面形评价中的应用

针对镜面面形均方根（RMS）无法反映表面面形的空间频域特性,借鉴了国际上先进的斜率均方根（Slope RMS）作为面形评价方法。本文以2 m级望远镜三镜作为例子,将Slope RMS作为优化目标函数,计算了支撑点的位置,给出的支撑之后面形误差RMS值为6.88 nm,在空间间隔为0.25 mm时的Slope RMS值为0.17809 μrad。利用Zernike多项式作为面形拟合基底函数,将对成像质量没有影响的刚体位移从面形误差中分离出来,得到最终的面形误差的RMS值为3.30 nm,在空间间隔为0.25 mm时的Slope RMS值为0.15943 μrad。研究结果表明,以Slope RMS为目标函数优化支撑点的支撑结果位置满足光学设计的要求,对更大口径光学元件的支撑设计提供了一种指导方法。     

TMT三镜被动支撑系统的概念设计

TMT（Thirty Meter Telescope）望远镜是一台R-C式的30 m口径光学红外望远镜，其三镜为椭圆形平面镜，口径为3.594 m2.568 m，质量达到1.8 t，三镜系统需要把来自次镜的光折转到望远镜两侧耐氏平台上的一系列科学仪器上，具有跟踪和快速定向功能。支撑系统包括底支撑系统和侧支撑系统，根据TMT对三镜的面形要求，提出了底支撑系统采用18点Whiffletree结构，通过优化分析，面形RMS值达到118.5 nm。针对侧支撑系统，提出了基于kinematics原理的12点支撑方式，侧支撑作用下的面形RMS值为4.7 nm，两者综合作用下的面形RMS值优于77 nm。按照支撑系统方案，设计了一种满足一定质量和体积要求的支撑系统结构。     

基于结构函数的子孔径拼接算法研究

为了更好地评价大口径反射光学元件在不同尺度下的起伏情况,提出了一种基于结构函数的子孔径拼接算法.首先,对于算法的基本原理与步骤进行了描述,从理论分析的角度对于计算误差的特性进行了分析;之后针对口径为1.23 m的大型反射镜面形数据,应用文中所提出的方法,利用结构函数进行子孔径拼接并对于其误差特性进行了检验,验证了所提出方法的可行性.最后,将该方法应用于30 m望远镜三镜(TMT M3)的面形仿真数据,得到了其在不同评价尺度下的起伏情况.文中的工作对于TMT M3 的最后完成有着重要的意义,并且对于与TMT M3 类似的大口径平面镜面形评价有着一定指导价值.     

基于斜率的TMT 三镜面形检测方法

为了完成对于30 m望远镜(TMT)三镜面形的检测,引入了基于斜率的测量方法。首先,针对斜率信息分别提出了对于低阶像差拟合以及中频误差分析的方法,并利用数值仿真以及实测数据对于之前提出的理论进行验证;最后,针对所提出的方法进行了基于蒙特卡洛法的误差分配,讨论了在TMT招标方所提出的精度要求下,各个检测仪器的精度如何分配。文中使用的方法,不仅对于TMT三镜的面形检测有很好的指导作用,同时对于类似的大口径平面镜的检测也有一定助力作用。     

超大口径平面反射镜的光学检测（特邀）

在简要总结了各种检测大口径反射镜难点的基础上,为了实现30 m望远镜（TMT）超大口径第三反射镜的高精度检测,提出了一种融合五棱镜扫描技术和子孔径拼接测试技术的新方法。大口径反射镜分阶段依次进行了五棱镜扫描测试和子孔径拼接检测,对该技术的基本原理和基础理论进行了分析和研究,制定了检测30 m望远镜第三反射镜（口径为3.5 m×2.5 m）的方案,对其测试流程、五棱镜设计、五棱镜扫描像差拟合、拼接最优化算法等进行了详细分析,并对30 m望远镜第三反射镜的原理镜进行了实验验证,其最终拼接检测面形的均方根值（RMS）和斜率均方根值（slopeRMS）分别为28.676 nm和0.97 μrad。     

基于加速度信号的TMT三镜镜面jitter测量

为了更好地对于TMT三镜镜面jitter进行评价,基于镜面方向的加速度信号,通过传递函数以及功率谱的方法,获得了镜面jitter的频域分布与数值特征。首先,对于梯形积分、辛普森积分以及3/8辛普森积分的基本性质进行推导,之后基于功率谱的思想,提出利用白噪声填满数据全部频域以及结合数值方法得到传递函数;最后对于实际测量得到的加速度信号,得到了米级口径望远镜镜面jitter的数值以及频域分布,同时证明了利用文中方法对TMT三镜镜面jitter进行评价的可行性。文中的方法对于同类的大口径望远镜的jitter测量也有一定的借鉴意义。     

2 m 望远镜K 镜支撑结构优化设计

为了使得某2m望远镜消旋K镜在重力环境温度变化的影响下镜面面形和结构刚度满足要求,设计了一种柔性支撑结构。KM1 支撑方式采用背部三点支撑,通过有限元软件ANSYS 对支撑位置进行优化。并基于伴随变换建立了柔性支撑杆的柔度矩阵,对柔性铰链的厚度、长度和宽度进行优化,使反射镜支撑刚度满足需求,并减轻热应力和装配应力面形的影响。KM2 采用周边三点支撑,间隔120均匀分布,支撑杆结构与KM1 相同。在重力和均匀温降的联合工况下,KM1 和KM2 的有限元仿真结果达到了设计要求,KM1 镜面面形RMS 低于/40,KM2 镜面面形RMS 低于/60,一阶谐振频率均高于100 Hz。     

柔性侧支撑在大型望远镜中的应用综述

阐述了目前大型望远镜口径的发展趋势,为保证镜面面形精度的前提下得出了柔性支撑是必不可少的环节这一现状。从力热耦合工况影响镜面面形的因素说明柔性技术在望远镜支撑系统中的必要性。概括了柔性支撑较于刚性支撑所具备的优势并且给出了柔性支撑设计时要遵循的几个原则。以柔性侧支撑为主介绍了三点切向支撑、边缘支撑、两脚架柔性支撑三种径向支撑形式,结合这三种支撑思想介绍国内外具有代表意义的几种大型望远镜中的应用实例。总结柔性支撑技术的应用领域及发展前景。希望能对柔性支撑技术的进一步发展提供一些借鉴意义。     

望远镜主镜面形误差的结构函数分析方法

望远镜主镜面形误差的指标制定、分析以及评价方法对主镜加工具有重要的指导意义。提出一种结构函数分析方法,利用它分析了大气湍流对望远镜系统成像质量的影响,制定出主镜面形加工误差的指标要求;通过建立泽尼克多项式与结构函数的直接转化关系,实现了对主镜面形误差的有效评价,给出了具体的转化步骤及结果;通过巨型麦哲伦望远镜(GMT)实例对分析过程进行了具体说明。结构函数分析方法与整镜均方根(RMS)波像差等方法相比,能更准确及完善地评价望远镜主镜的面形误差,对镜面加工更具指导意义。     

空间相机快速反射镜的结构轻量化设计

针对空间相机快速反射镜的工作条件和工作要求,提出了快速反射镜的结构轻量化设计方案。以100 mm口径圆形反射镜为研究对象,设计了利用加强筋减重的反射镜轻量化结构,并提出了基于镜面抗弯刚度等效的等效标准圆镜厚度的计算方法;分别设计了基于镶嵌体结构的背部三点支撑方案和背部中心支撑方案,有限元对比分析的结果表明,采用背部中心支撑方案可以避免镜座与反射镜之间因温度变形不协调引起的多个支撑点相互干涉,镜面面形精度较高,并且由于结构简单,其摆动组件的总质量更轻;为了进一步提高快速反射镜结构的综合性能,同时以摆动组件的总质量及镜面面形的均方根值为优化目标,对背部中心支撑方案下快速反射镜的主要结构参数进行了多目标优化,优化结果显示,加强筋的高度和镶嵌体的壁厚对结构综合性能的贡献最大;最终优化方案下快速反射镜的摆动组件总质量仅为95.75 g,结构的一阶谐振频率为217 Hz,在-8℃温度载荷的作用下,镜面面形的RMS为7.26 nm,满足设计要求的同时,反射镜实现了40.4%的轻量化率。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.