Electromechanical properties of fine-grain, 0.7 Pb(Mg(1/3)Nb(2/3))O3-0.3PbTiO3 ceramics

A fine grain, relaxor-based piezoelectric ceramic 0.7 Pb(Mg(1/3)Nb(2/3))O3-0.3PbTiO3 (PMN-30% PT) has been investigated, which was fabricated using the columbite precursor method. The complete set of electromechanical properties of the piezoceramic at room temperature is determined using a combination of ultrasonic and resonance techniques. This fine-grain ceramic (grain size < or = 2.5 microm) exhibits ultra-high dielectric permittivity (epsilon33(T)/epsilon0 approximately 7000) and a high coupling coefficient k(33) (= 0.78). Ultrasonic spectroscopy was used to measure the dispersion of the phase velocity and attenuation for the longitudinal wave propagating in the poling direction. Lower attenuation and smaller velocity dispersion were observed compared to modified Pb(Zr(x)Ti(1-x)O3 (PZT-5H) ceramics. The measurement results show that this fine-grain PMN-30% PT ceramic is a very good material for making ultrasonic array transducers.     

Domain size engineering in tetragonal Pb(In(1∕2)Nb(1∕2))O(3)-Pb(Mg(1∕3)Nb(2∕3))O(3)-PbTiO(3) crystals

The effect of domain size on the dielectric and piezoelectric properties of [111]-oriented tetragonal Pb(In(1∕2)Nb(1∕2))O(3)-Pb(Mg(1∕3)Nb(2∕3))O(3)-PbTiO(3) crystals was investigated. The dielectric permittivity (?(33?) (T)∕?(0)) and piezoelectric coefficient (d(33)) were found to be on the order of 13 800 and 1630 pC∕N, respectively, for samples with domain size of ～500?nm, a 3-fold increase to crystals with domain size of ～50?μm. Rayleigh analysis revealed that the extrinsic contribution to the piezoelectric response increased from ～8% to 30% with decreasing domain size, due to the increased domain wall density and associated irreversible domain wall motion. The enhanced properties were thought to relate to the fine domain structures, however, showing a poor electric field and temperature stabilities with domain size of 500?nm. Of particular significance is that samples with domain size being on the order of 5?μm exhibit field and temperature stabilities, with yet high piezoelectric properties, make it potential for transducer applications.     

Characterization of flux-grown PZN-PT single crystals for high-performance piezo devices

Relaxor ferroelectric Pb(Zn(1/3)Nb(2/3))O(3-x)PbTiO(3) (PZN-PT) and Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3)(PMN-PT) single crystals are the potential candidates for future high-performance piezoelectric devices due to their exceptionally high dielectric and piezoelectric properties. Characterization on flux-grown PZN-PT single crystals of different orientations revealed that PZN-(6-7)%PT single crystals show good homogeneity in dielectric and electromechanical properties and composition. When poled in [001] direction, these crystals exhibit high longitudinal-mode properties with dielectric constant (K(T)) approximately equal to 7000, piezoelectric coefficients (d(33)) approximately equal to 2800 pC/N, and electromechanical coupling factors (k(33)) > or = 0.92. For [011]-cut crystals, optimally poled PZN-7%PT single crystal exhibits very high transverse-mode dielectric and piezoelectric properties with K(T) > or = 5000, d(32) approximately equal to -3800 pC/N and k(32) > or = 0.90. [011]- poled PZN 6%PT has d(32) approximately equal to -3000 pC/N and comparable k(32) and K(T) values. In comparison with melt-grown PMNPT single crystals, flux-grown PZN-PT single crystals show good compositional homogeneity, superior and consistent dielectric and electromechanical properties, and higher depolarization temperatures (TDP).     

Dielectric and piezoelectric properties of CeO2-added nonstoichiometric (Na0.5K0.5)0.97(Nb0.96Sb0.04)O3 ceramics for piezoelectric energy harvesting device applications

In this study, nonstoichiometric (Na(0.5)K(0.5))(0.97)(Nb(0.96)Sb(0.04))O(3) ceramics were fabricated and their dielectric and piezoelectric properties were investigated according to the CeO(2) addition. In this ceramic composition, CeO(2) addition improved sinterability, electromechanical coupling factor k(p), mechanical quality factor Q(m), piezoelectric constant d(33), and g(33). At the sintering temperature of 1100°C, for the 0.2wt% CeO(2) added specimen, the optimum values of density = 4.359 g/cm(3), k(p) = 0.443, Q(m) = 588, ε(r) = 444, d(33) = 159 pC/N, and g(33) = 35 × 10(-3) V·m/N, were obtained. A piezoelectric energy harvesting device using 0.2 wt% CeO(2)- added lead-free (K(0.5)Na(0.5))(0.97)(Nb(0.96)Sb(0.04))O(3) ceramics and a rectifying circuit for energy harvesting were fabricated and their electrical characteristics were investigated. Under an external vibration acceleration of 0.7 g, when the mass, the frequency of vibration generator, and matching load resistance were 2.4 g, 70 Hz, and 721 Ω, respectively, output voltage and power of piezoelectric harvesting device indicated the optimum values of 24.6 mV(rms) and 0.839 μW, respectively-suitable for application as the electric power source of a ubiquitous sensor network (USN) sensor node.     

Y5U multilayer ceramic capacitors with high-specific capacitance and low-equivalent series resistance

A dielectric powder material, for Y5U multilayer ceramic capacitors was developed in the Pb(Mg(1/3)Nb(2/3))O (3)-Pb(Ni(1/3)Nb(2/3))O(3)-PbTiO (3) ternary system by using an alkoxide process. Multilayer ceramic chip capacitors (10 muF) with high specific capacitances were fabricated using this powder. A Ag80%-Pd20% alloy was used for the internal electrodes. The alkoxide-derived capacitor had an extremely high specific capacitance of about 500 muF/cm(3) and a small temperature dependence meeting Y5U specifications of the EIA standard. The equivalent series resistance was approximately 20 mOmega at 500 kHz. The breakdown voltages of the capacitor were 300 V or higher. In accelerated load life tests and load humidity tests, no degradation of insulation resistance was found during 1000 h of testing.     

A double-mode piezoelectric single-crystal ultrasonic micro-actuator

Ternary Pb(In(1/2)Nb(1/2))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PIN-PMN-PT) single crystals with higher coercive field (E(C) ~9 kV/cm) and higher ferroelectric-transition temperature (T(R-T) = 108°C) were grown, and correspondingly, a double-mode piezoelectric ultrasonic micro-actuator made of PIN-PMN-PT crystal brick (5 x 1.5 x 1.32 mm) and operated in the first longitudinal and the second bending modes was developed. The ferroelectric, dielectric, electromechanical, and resonance displacement properties of the micro-actuator were characterized for miniature linear piezo-motor applications. The longitudinal displacement of the actuator is ~0.11 μm (with an applied voltage of 5 V), which is comparable to that of a multilayer piezoelectric-ceramic actuator of the same size. This crystal micro-actuator was successfully used to drive a slider moving linearly.     

Complete set of material properties of [011](c) poled 0.24Pb(In(1/2)Nb(1/2))O(3)-0.46Pb(Mg(1/3)Nb(2/3))O(3)-0.30PbTiO(3) single crystal

A complete set of elastic, piezoelectric, and dielectric constants of [011](c) poled multidomain 0.24Pb(In(1/2)Nb(1/2))O(3)-0.46Pb(Mg(1/3)Nb(2/3))O(3)-0.30PbTiO(3) ternary single crystal has been determined using resonance and ultrasonic methods and the temperature dependence of the dielectric permittivity has been measured at 3 different frequencies. The experimental results revealed that this [011](c) poled ternary single crystal has very large transverse piezoelectric coefficient d(32) = -1693 pC/N, transverse dielectric constant ε(11)/ε(0) ~ 7400 and a high electromechanical coupling factor k(32) ~ 90%. In addition, its coercive field is 2 times of that of the corresponding binary 0.7Pb(Mg(1/3)Nb(2/3))O(3)-0.30PbTiO(3) single system with much better temperature stability. Therefore, the crystal is an excellent candidate for transverse mode electromechanical devices.     

Pb(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3压电陶瓷的温度稳定性研究

探讨了硬性添加物MnO2、软性添加物Nb2O5和两性添加物Cr2O3对锑锰锆钛酸铅Pb(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3(简称PMSZT5)压电陶瓷的相组成及温度稳定性的影响.研究结果发现:各掺杂组成在900℃的煅烧温度下,都可以得到钙钛矿结构.随着各掺杂离子的增大,四方相含量减少,准同型相界向三方相移动.综合考虑离子掺杂对PMSZT5压电陶瓷的机电性能及温度稳定性的研究结果表明:锰过量较其它铌和铬掺杂的温度稳定性更好,机电性能最佳的PMSZT5+0.1wt%MnO2的组成,ε33T/ε0=1560,d33=350pC/N,Kp=0.63,25~80℃的fr、K31和d31平均温度系数分别为72×10-6/℃、0.027%/℃和0.100%/℃.     

Sintering and piezoelectric properties of KNN ceramics doped with KZT

This paper investigates the effect of K(1.94)Zn(1.06)Ta(5.19)O(15) (KZT) addition on the sintering behavior and piezoelectric properties in lead free piezoelectric ceramics of (K(0.5)Na(0.5))NbO(3) (KNN). The apparent density of sintered KNN ceramics was increased with KZT addition, and a relative density of above 96.3% was obtained with the doping of over 0.5 mol% KZT. The maximum dielectric and piezoelectric properties of epsilon(T)(3)/epsilon(0) = 590, d(33) = 126 pC/N, k(p) = 0.42, and P(r) = 18 microC/cm(2) were obtained from 0.5 mol% KZT-doped KNN ceramics. A small amount of KZT (about 0.5 mol%) was effective for improving the sintering behavior and piezoelectric properties, but KZT addition exceeding 1.0 mol% was effective only for densification. A small amount of KZT was effective for densification of KNN ceramics by promoting K(5.75)Nb(10.8)O(30) liquid phase formation. However, even though KNN with 1.0 to approximately -2.0 mol% KZT had a relative density of >98.5%, the piezoelectric properties were inferior to those of 0.5 mol% KZT-doped KNN, presumably due to the smaller grain size and excess liquid phase of the KNN ceramics doped with higher amounts of KZT. It is believed that a small amount of KZT could be one of the suitable sintering aids to obtain highly dense KNN based piezoelectric.     

铬掺杂的PSN-PZN-PZT四元系压电陶瓷材料的研究

用传统固相合成方法制备了Pb(sn1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3-PbZrO3-PbTiO3(简写为PSN-PZN-PZT)四元系压电陶瓷材料,主要研究Cr离子掺杂对此材料的微观结构以及压电、介电性能的影响.通过对XRD衍射谱图分析可知,随着Cr的掺杂量的增大,该系统材料的三方相的含量减少,准同相界的位置向三方相移动;SEM照片显示,晶粒尺寸随Cr的量增大而增大,在0.5wt%含量时晶粒分布均匀且大小较为一致;ERP结果表明,Cr2O3在材料中主要以Cr3 、Cr5 存在.且结合材料的性能参数分析,增加Cr的含量会促使Cr离子由高价向低价转化.当Cr2O3的掺杂量为0.5wt%时,PSN-PZN-PZT材料的综合性能较好.     

Investigation of single and multidomain Pb(In(0.5)Nb(0.5))O(3)-Pb(Mg(1∕3)Nb(2∕3))O(3)-PbTiO(3) crystals with mm2 symmetry

The piezoelectric properties of Pb(In(0.5)Nb(0.5))O(3)-Pb(Mg(1∕3)Nb(2∕3))O(3)-PbTiO(3) crystals with various engineered domain configurations were investigated. Rhombohedral and monoclinic∕orthorhombic crystals poled along their crystallographic [011] directions were found to possess macroscopic mm2 symmetry, with "2R" and "1O" domain, respectively. Crystals with the "2R" domain configuration were found to exhibit high extensional piezoelectric coefficients d(33) (～1300 pC∕N) and d(32) (～-1680 pC∕N), while crystals with the "1O" configuration possessed high shear coefficients d(15) (～3500 pC∕N) and d(24) (～2070 pC∕N), with relatively low extensional piezoelectric coefficients d(33) (～340 pC∕N) and d(32) (～-260 pC∕N). The observed results were explained by "polarization rotation" model, as related to their respective domain configurations.     

Electromechanical properties of Pb(In(1∕2)Nb(1∕2))O(3)-Pb(Mg(1∕3)Nb(2∕3))O(3)-PbTiO(3) single crystals

The Pb(In(1∕2)Nb(1∕2))O(3)-Pb(Mg(1∕3)Nb(2∕3))O(3)-PbTiO(3) (PIN-PMN-PT) crystals were studied as function of phase and orientation. The properties, including the Curie temperature T(C), ferroelectric-ferroelectric phase transition temperature T(R∕O-T), coercive field, and piezoelectric∕dielectric responses, were systematically investigated with respect to the composition of PIN-PMN-PT crystals. The Curie temperature T(C) was found to increase from 160 to 220 °C with ferroelectric-ferroelectric phase transition temperature T(R-T) and T(O-T) being in the range of 120-105 °C and105-50 °C, respectively. The piezoelectric activity of PIN-PMN-PT crystals was analyzed by Rayleigh approach. The ultrahigh piezoelectric response for domain engineered [001] (1600-2200 pC∕N) and [011] (830-1550 pC∕N) crystals was believed to be mainly from the intrinsic contribution, whereas the enhanced level of piezoelectric and dielectric losses at the compositions around morphotropic phase boundaries (MPBs) was attributed to the phase boundaries motion.     

1-3型水泥基压电复合材料的制备及性能

采用切割-浇注法, 以硫铝酸盐水泥为基体, 制备了1-3型水泥基压电复合材料。详细阐述了1-3型水泥基压电复合材料的制备过程; 研究了0.375Pb(Mg_1/3Nb_2/3)O₃-0.375PbTiO₃-0.25PbZrO₃压电陶瓷柱的宽厚比w/t对1-3型水泥基压电复合材料的压电性能、 介电性能和声阻抗的影响。结果表明: 压电陶瓷柱的宽厚比w/t对1-3型水泥基压电复合材料性能有很大影响, 随着w/t的增加, 其压电应变常数d₃₃、 机电耦合系数K_p与K_t、 机械品质因数Q_m、 介电常数ε_r和介电损耗tanδ均随着w/t的增加而减小, 而压电电压常数g₃₃值几乎不受w/t的影响。在压电陶瓷体积分数仅为22.72%的条件下, 调节压电陶瓷柱的宽厚比w/t至0.130, 可使复合材料的声阻抗与混凝土的声阻抗十分接近, 从而有效地解决了智能材料在土木工程中的声阻抗相容性问题。      

SrCO3掺杂对PMN-PMnN-PZT-Ce压电陶瓷储能及介电弛豫性能的影响

通过铌铁矿先驱法制备了Pb(Mg_(1/3)Nb_(2/3))O_3-Pb(Mn_(1/3)Nb_(2/3))O_3-PbZrO_3-PbTiO_3+0.3%CeO_2(质量分数)+xSrCO_3(PMN-PMnN-PZT-Ce-xSr,x=0.00,0.03,0.05,0.07)四元系压电陶瓷,研究了SrCO_3含量的变化对Pb(Mg_(1/3)Nb_(2/3))O_3-Pb(Mn_(1/3)-Nb_(2/3))O_3-PbZrO_3-PbTiO_3+0.3%CeO_2(质量分数)(PMN-PMnN-PZT-Ce)压电陶瓷相结构、储能密度以及弛豫行为的影响。通过XRD表明,样品为单一稳定的钙钛矿结构,并且存在准同晶界(MPB);当x=0.07时,在外加电场60kV/cm下取得较好的储能性能:储能密度W1=0.31J/cm~3,储能效率η=0.47;通过修正Curie-Weise定律,较好地描述了陶瓷弥散相变的特征,弥散相变系数γ随着Sr~(2+)掺杂量的增加而增加。当x=0.07时,γ取得最大值1.972 8,此时弛豫现象最明显。     

PMN-PT单晶与陶瓷在性能及相变方面的特点

着重介绍了用Ｂridgman方法生长的（１-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3(PMN-PT)固溶体单昌在介电,压电、热释电性能及相应方面的一些特点;①异常高的电常数d33(高达３０００pC/N以上）,耦合系数kg(在０．６以上）,k33(达０．９０）,高的介电常数ε（高达５００甚至更高）,低的Ｑm值（约６０）,热释电系数也较高。②强烈的各向异性。③随着ＰＴ含量的增加,系统的弛豫行为逐渐减弱,在x=0．３３时,材料在室温下成为正常铁电体,但ＰＥ－ＦＥ相变并非正常铁电相变,表现在Ｔ＞Ｔm时,ε－Ｔ关系不遵守居里－包斯定律,而是遵守Ｓmolenskii的关系。该相变也明显地与弥散相变不同,这种行为可用无场的观点加以解释。     

铌镁酸铋-钛酸铅压电陶瓷准同型相界附近的性能和相变温度研究

利用传统固相烧结法制备了Bi(Mg_2/3Nb_1/3)O₃-PbTiO₃(BMN-PT)压电陶瓷, 分析了不同PbTiO₃含量对BMN-PT压电陶瓷的晶体结构、介电、压电及铁电性能的影响. XRD结果表明: 合成的BMN-PT陶瓷具有纯钙钛矿结构, 并且在PbTiO₃含量为x=0.60时, 其组分的XRD图谱在衍射角2θ=45°出现明显的分峰, 说明该组分相结构中存在三方和四方相的共存. 压电铁电性能显示, BMN-0.60PT有最大的压电常数d₃₃(~170pC/N)和平面机电耦合系数k_p(0.35), 最小的矫顽场E_c(29.4 kV/cm)及最大的剩余极化P_r(31.4 μC/cm²). 确定了BMN-PT压电陶瓷的准同型相界(MPB)为PbTiO₃含量x=0.60的组分. 介电系数温谱表明介电系数峰值温度(Tm)随着PbTiO₃含量的增大而升高, MPB组分的Tm约为276℃.     

CeO_2掺杂对Pb_(0.92)Sr_(0.06)Ba_(0.02)(Sb_(2/3)Mn_(1/3))_(0.05)Zr_(0.48)Ti_(0.47)O_3基压电陶瓷相结构及性能的影响

采用传统固相烧结法制备Pb_(0.92)Sr_(0.06)Ba_(0.02)(Sb_(2/3)Mn_(1/3))_(0.05)Zr_(0.48)Ti_(0.47)O_3∶xCeO_2(简称PSBSM-PZT)压电陶瓷样品。研究不同CeO_2掺杂含量对PSBSM-PZT基陶瓷样品的物相结构、微观形貌、压电及介电性能的影响。结果表明:当CeO_2掺杂量x≤0.5%(质量分数,下同)时,陶瓷样品均为纯的钙钛矿结构。随着CeO_2掺杂含量的增加,陶瓷样品中四方相结构逐渐向三方相结构转变。随着CeO_2掺杂含量的进一步增加,陶瓷中出现焦绿石相,虽然陶瓷中已经出现焦绿石相,但是样品仍没有完全转变为三方相陶瓷;CeO_2掺杂具有细化晶粒的作用,当x=0.25%时样品晶粒晶界清晰,晶粒之间的结合相对致密,晶界处气孔率低,陶瓷断裂方式以沿晶断裂为主;当x=0.25%时,陶瓷样品获得最佳的压电与介电性能:d_(33)=346pC/N,k_p=0.60,Q_m=1396,ε_r=1309,tanδ=0.474%。     

(Ba0.85Ca0.15)(Ti0.9Zr0.1-xSnx)O3无铅压电陶瓷的相结构与压电性能

钙锆共掺钛酸钡陶瓷(BCZT)具有优异的介电性能和压电性能, 是一类具有发展潜力的无铅压电陶瓷, 但其压电性能仍无法与铅基陶瓷媲美。为提高压电性能, 本研究对陶瓷材料进行Sn元素掺杂改性((Ba_0.85Ca_0.15)- (Ti_0.9Zr_0.1-xSn_x)O₃, x=0.02~0.07))。晶体结构分析证实所有组分的陶瓷无杂相, 处于正交相与四方相两相共存状态, 并具有较大的c/a; 显微结构分析发现所有陶瓷都很致密, 且平均晶粒尺寸随着Sn含量的增加而增大。当x=0.04时, 陶瓷最致密, 且室温处于准同型相界附近, 因此拥有最佳的电学性能: d₃₃=590 pC•N ^-1, k_p=52.2%, tanδ=0.016, ε ^T₃₃=5372, d ^*₃₃=734 pm•V ^-1, IR=57.8 GΩ•cm。本研究表明: Sn掺杂的BCZT基无铅压电陶瓷具有优异的压电性能, 有望在换能器、机电传感器和驱动器等方面得到应用。     

三元陶瓷Pb(In1/2Nb1/2)O3-Pb(Ni1/3Nb2/3)O3-PbTiO3准同型相界附近组分的介电、铁电和压电性能

铅基复合钙钛矿铁电材料广泛应用于机电传感器、致动器和换能器。二元铁电固溶体Pb(Ni_1/3Nb_2/3)O₃- PbTiO₃(PNN-PT)由于其在准同型相界(MPB)区域具有优异的压电、介电性能而备受关注。然而较大的介电损耗和较低的居里温度限制了其在高温高功率器件方面的应用。本研究通过引入Pb(In_1/2Nb_1/2)O₃ (PIN)作为第三组元改善PNN-PT的电学性能, 提高其居里温度; 通过两步法合成了MPB区域的三元铁电陶瓷Pb(In_1/2Nb_1/2)O₃- Pb(Ni_1/3Nb_2/3)O₃-PbTiO₃ (PIN-PNN-PT), 研究了其结构、介电、铁电和压电性能。制备的所有组分陶瓷具有纯的钙钛矿结构。随着PT含量的增加, 陶瓷结构从三方相转变为四方相。通过XRD分析得到了室温下PIN-PNN-PT体系的MPB相图。体系的居里温度由于PIN的加入得到了很大的提高, 更重要的是PIN的引入降低了PNN-PT体系的介电损耗和电导。MPB处的组分展现出了优异的电学性能, 室温下, 性能最优组分为0.30PIN-0.33PNN-0.37PT: d₃₃=417 pC/N, T_C=200 ℃, ε′= 3206, tanδ=0.033, P_r=33.5 μC/cm², E_C=14.1 kV/cm。引入PNN-PT的PIN第三组元使得体系的居里温度和压电性得到提高的同时降低了的介电损耗和电导率, 因此, PIN-PNN-PT三元铁电陶瓷在高温高功率换能器等方面具备一定的应用潜力。     

High-power piezoelectric characteristics of textured bismuth layer structured ferroelectric ceramics

Abstract-The high-power piezoelectric characteristics in h001i oriented ceramics of bismuth layer structured ferroelectrics (BLSF), SrBi(2)Nb(2)O(9) (SBN), (Bi,La)(4)Ti(3)O(12) (BLT), and CaBi(4)Ti(4)O(15) (CBT), were studied by a constant voltage driving method. These textured ceramics were fabricated by a templated grain growth (TGG) method, and their Lotgering factors were 95%, 97%, and 99%, respectively. The vibration velocities of the longitudinal mode (33-mode) increased proportionally to an applied electric field up to 2.5 m/s in these textured BLSF ceramics, although, the vibration velocity of the 33-mode was saturated at more than 1.0 m/s in the Pb(Mn,Nb)O(3)-PZT ceramics. The resonant frequencies were constant up to the vibration velocity of 2.5 m/s in the SBN and CBT textured ceramics; however, the resonant frequency decreased with increasing over the vibration velocity of 1.5 m/s in the BLT textured ceramics. The dissipation power density of the BLT was almost the same as that of the Pb(Mn,Nb)O(3)-PZT ceramics. However, the dissipation power densities of the SBN and CBT were lower than those of the BLT and Pb(Mn,Nb)O(3)-PZT ceramics. The textured SBN and CBT ceramics are good candidates for high-power piezoelectric applications.