外延片夹层电压数学模型推导

讨论了外延片的外延层电阻率、衬底电阻数、探针接触电阻、外延层纵向电阻与夹层电压之间的关系，推导了一种全新的二探针法测量外延夹层电压的数学公式，从而为计算外延片夹层电压提供了理论依据。     

N~-/P~+异型高阻厚层硅外延材料

研制了N－／P+异型、高祖、厚层硅外延材料，并对厚层外延及高用异型外延中出现的问题进行了讨论，提出了提高外延材料质量的方法。     

外延层组分界面状况的X射线双晶衍射测定

本文介绍了一种用Ｘ射线双晶衍射仪测定外延层与衬底界面状况并同时测定外延层点阵常数及组分的方法，只需测量三个衍射，并考虑了晶体表面偏离对称轴的影响．同时，引入了表征界面状态的界面共格因子，讨论了它的意义．实验结果表明：在测定大失配体系外延材料的组分时，同时测定外延层与衬底之间以及外延层与外延层之间的界面关系是必要的．     

减小硅外延自掺杂影响的改进的二步外延法

叙述了一种减小硅外延自掺杂影响的改进的二步外延法：减压－常压二步法。采用该方法所生长的外延层，其过渡区明显小于常规二步法的结果，和单纯减压方法所得的结果相当，外延层晶格质量明显优于单纯减压外延的结果。     

外延淀积过程中的自掺杂抑制

外延层杂质浓度是影响器件电学性能的重要参数。文章对外延淀积过程中自掺杂的产生过程进行了分析，提出了在外延淀积过程中可以通过改变气流、温度及采用背封技术、二步外延等方法来解决外延自掺杂，从而改善器件的特性参数。     

硅外延层电阻率测量值一致性研究

外延层电阻率是外延片的重要特征参数之一。如何准确地测量外延层电阻率，以满足器件研制的需要，是检测人员所关注的一个重要课题，对目前常用的几种外延层电阻率测量方法进行了比较，指出了其各自的优缺点，讨论了测量中存在的问题，针对这些问题，采取了相应的措施，试验和分析结果表明，几种测试 方法的结果获得了相当好的一致性，测量相对误差可控制在５％以内，能够满足现有器件对外延片电阻率精度的要求。     

超高真空CVD极低温低压硅外延与高分辨TEM分析研究

本研究利用一台新型的超高真空气相外延（ＣＶＤ）设备，成功地在树底温度为５５０℃的（１００）硅片上由硅烷热解法生长了外延层，实现了极低温低压外延新工艺．高分辨率的横断面透射电镜（ＸＴＥＭ）照片表明，低温硅外延层中缺陷明显有其特点，而绝大部分的缺陷都由衬底表面引起的，然后传播进入外延层．本文还对低温硅外延层中的缺陷特征及其形成机制与树底表面特性的关系进行了分析讨论     

SIT制造中的低温二次外延工艺

ＳＩＴ之类的隐埋栅结型场效应管，在制作工艺中，为了达到把“栅”隐埋起来的目的，必须采用二次外延工艺．本文讨论了二次外延工艺的特点及采用硅烷外延实现二次外延的质量控制。     

用混合液相外延/汽相外延法制作的激光器

据东京日本电报电话公司武藏野电气通信研究所的科学家报导，用液相外延和汽相外延相结合的技术制作掩埋异质结激光器，避免了用普通液相外延法所遇到的一些问题。研制者发展了这样一种用液相外延和汽相外延相结合制作激射波长为1.525微米的GaInAsP/InP激光器的混合技术。     

偏晶向(0001)Si-面衬底上4H-SiC的LPCVD外延生长

化学气相沉积（CVD）是微电子器件用SiC外延材料的主要生长技术. 为了获得高质量的4H-SiC外延材料，在偏向〈1120〉方向8. 的4H-SiC (0001) Si-面衬底上，利用台阶控制生长技术进行4H-SiC的同质外延生长. 表面形貌是SiC外延材料质量好坏的一个重要参数，为此研究了表面形貌与工艺参数的关系，探讨了4H-SiC外延膜的表面缺陷形成原因. 利用Raman散射技术研究了非均匀4H-SiC外延材料的多晶型现象.     

Physics-based minority charge and transit time modeling for bipolartransistors

It has been well known for many years that the transit time model used in the SPICE Gummel-Poon model (SGPM) is not adequate for reliable design of circuits operating either at high current densities (including quasi-saturation), which is often the case in high-speed integrated circuits, or at low voltages, which is important for low-power applications. In addition, extraction of the SGPM's transit time model parameters is often very difficult and time consuming. Although various proposals for modeling the transit time were published in the past, most of them are not suited for compact transistor models required in circuit simulation from a numerical, parameter extraction and lateral scaling point of view. In this paper, a set of minority charge and transit time equations is derived which are physics-based and laterally scaleable as well as suitable for incorporation into compact models. Experimental results of the new model are presented in terms of transit time and transit frequency versus bias (I_C, V_CE), geometry, and temperature, showing excellent agreement for different types of silicon homojunction bipolar transistors     

圆柱面和球面真空微电子二极管内电子渡越时间的计算

从拉普拉斯（Laplace）方程和电子渡越时间的定义出发,推导出了圆柱面和球面真空微电子二极管内的电子渡越时间关系式。引入了等效真空微电子二极管的概念,进一步估算了真空微电子三极管内的典型电子渡越时间。     

卫星地球站日凌时间计算方法

日凌是太阳辐射在春秋分前后一段时间内对卫星通信产生严重干扰的一种现象。日凌的影响是难以避免的,但其发生时间是可以预测的,准确预报日凌发生的日期和时间,可以使重要业务通信尽量避开“日凌中断通信”的时间,避免日凌对业务的影响。在已有文献工作基础上,结合太阳位置精确算法和球面三角分析方法,提出了一种日凌发生时间计算方法,并设计了计算程序。通过比对计算结果与实际观测数据,验证了该算法的准确性和科学性。     

基于知识图谱的城市轨道交通突发事件演化结果预测

准确预测突发事件的演化结果,对城市轨道交通系统制定应急方案、保障安全运营,具有重要的参考意义。目前突发事件演化结果预测方法智能化程度不高,过分依赖决策者主观设定的特征权重、检索模板,复杂、准确性低且应用性较弱。该文基于知识图谱(KG)和关系图卷积神经网络(R-GCN)模型提出一种城市轨道交通突发事件演化结果预测方法。首先,构建城市轨道交通突发事件知识图谱,将与事件相关的场景信息进行结构化处理;其次,基于关系图卷积神经网络模型构建城市轨道交通突发事件结果的预测模型;最后,利用城市轨道交通突发事件案例库进行验证。实验结果表明,所提预测方法具有较好的准确率、较强的普适性,可为轨道交通应急管理提供方法和技术支持。     

Transit time in the base region of drift transistors considering diffusion, recombination, and variable built-in electric field

The present work gives detailed analysis of the transit time of injected minority carriers in the base region of drift transistors, taking into consideration the effect of recombination as well as the variations in the built-in electric field. Some useful impurity-density distributions in the base region are analyzed in detail. Graphs of transit time for these distributions under different conditions are given. The work also includes the distribution that yields minimum transit time for a specified field parameter.     

短沟道MOSFET渡越时间物理模型

叙述了一个考虑包括速度过冲等短沟道效应的ＭＯＳＦＥＴ渡越时间解析模型，计算结果与二维数值模拟符合较好。基于该模型，探讨了在线性工作区和饱和工作区渡越时间对栅偏压依赖关系的不同，并作了物理解释。模型还表明由速度过冲带来渡越时间的缩短对沟道长度大于０．２５μｍ的ＭＯＳＦＥＴ不超过１０％     

Transit traffic service in communications networks

Servicing of the traffic in the transit operator network is discussed. The conceptual scheme of servicing of requests in the transit operator network is proposed. This scheme makes it possible to estimate both the subscriber behavior and the actions of the equipment employed by a transit operator and other operators participating in connection. The points of generation and the causes repeated passage of calls (signaling messages) over communications channels are shown. Recommendations for organizing measurements and interpreting the indicators of quality of service are presented.     

Monte Carlo evaluation of electron transport in heterojunction bipolar transistor base structures

Electron transport through base structures of AlxGa1-xAs heterojunction bipolar transistors is evaluated by Monte Carlo simulation. Simulation results demonstrate the effectiveness of both ballistic launching ramps and graded bases for reducing base transit time. Both techniques are limited, however, in their ability to maintain short transit times across the wide bases that are desirable for reduction of base resistance. Simulation results demonstrate that neither technique is capable of maintaining a 1-ps transit time across a 0.25-µm base. The physical mechanisms responsible for limiting the performance of each structure are identified and a promising hybrid structure is described.     

Accumulation transit mode in transferred-electron oscillators

Computer simulations have been used to analyse device characteristics appropriate to an accumulation-layer transit mode. Data for GaAs, previously attributed to the limited-space-charge-accumulation mode, and for indium phosphide, are identified with accumulation transit oscillations.     

New expression for base transit time in a bipolar transistor for all levels of injection

A new and compact formula for the base transit time in an npn bipolar junction transistor is derived. The collector current density and minority carrier charge within the base are separately expressed as a function of injected electron concentration in the neutral base in order to find an expression for base transit time. The modeling of collector current density, base stored charge and base transit time is essential for the design of high speed bipolar transistors. The derived expressions are applicable for arbitrary injection regions before the onset of the Kirk effect and they are simple and straightforward to give a physical insight into device operation.