电介质保护膜对磁光记录膜的磁和磁光特性的影响

采用射频磁控溅射法制备了非晶TbFeCo薄膜及其保护层AlN薄膜，并研究保护层对薄膜的磁和磁光特性的影响。结果表明，AlN薄膜可以增强薄膜磁光效应，同时，AlN薄膜对TbFeCo磁光薄膜的矫顽力、垂直磁各向异性以及本征克尔角都有一定的影响。其原因来自于溅射过程中N和Al原子对TbFeCo薄膜表面的轰击而导致的界面特性的改变。     

Ag底层对TbFeCo薄膜磁性能的影响

采用射频磁控溅射法在玻璃基片上制备了TbFeCo/Ag非晶垂直磁化膜，研究了Ag底层厚度对TbFeCo薄膜磁性能的影响。原子力显微镜、振动样品磁强计与磁光盘测试仪测量结果表明：薄的银底层具有较高的表面粗糙度可以显著增大TbFeCo薄膜的矫顽力，改善TbFeCo薄膜的磁光温度特性，该薄膜有望用作高密度垂直记录介质与光磁混合记录介质。     

磁控溅射制备TbFeCo薄膜及其光学和磁光性质研究

采用放电等离子烧结(SPS)TbFeCo合金靶,分别在Si衬底和K9玻璃衬底上磁控溅射制备了磁光薄膜TbFeCo/Si和TbFeCo/K9;利用扫描型可变入射角全自动椭偏仪,室温下测量了复介电常数谱,测量结果表明两样品介电函数值有较大差异,说明衬底对薄膜的光学性质有重要影响.用磁光Kerr谱仪,在室温下分别测量了TbFeCo薄膜的极向Kerr回线和横向Kerr回线,发现所制备TbFeCo薄膜不具有垂直磁化性质,而呈现出面内磁化性质.     

溅射工艺条件对TbFeCo/Pt薄膜磁性能的影响

采用射频磁控溅射法在玻璃基片上成功制得了TbFeCo/Pt非晶垂直磁化膜,系统研究了溅射工艺参数对TbFeCo薄膜磁性能的影响.振动样品磁强计测量结果表明:Tb含量在补偿成分点附近,采用较低的溅射氩气压与Pt底层,有利于提高TbFeCo薄膜的磁性能;当Tb含量为0.24,溅射功率为300W,溅射气压为0.53Pa,薄膜厚度为140nm时,TbFeCo/Pt薄膜矫顽力达到476kA/m,饱和磁化强度为151kA/m,剩磁矩形比超过0.8,该薄膜有望用作高密度光磁混合记录介质.     

电介质保护膜对磁光记录膜的磁和磁光特性的影响

采用射频磁控溅射法制备了非晶TbFeCo薄膜及其保护层AlN薄膜 ,并研究保护层对薄膜的磁和磁光特性的影响。结果表明 ,AlN薄膜可以增强薄膜磁光效应 ,同时 ,AlN薄膜对TbFeCo磁光薄膜的矫顽力、垂直磁各向异性以及本征克尔角都有一定的影响。其原因来自于溅射过程中N和Al原子对TbFeCo薄膜表面的轰击而导致的界面特性的改变     

RE—TM磁光记录薄膜的磁场电效应研究

研究了磁性薄膜场电效应的测试方法，RE－TM磁光薄膜的测试样品制备、样品的磁场电效应（霍尔效应和磁阻效应）及其温度特性，实验结果表明，制备的TbFeCo薄膜的补偿点约为－38℃。     

磁光盘多层结构AIN和AlSiN薄膜材料研究

本文研究了磁光材料保护膜ＡＩＮ和ＡＩＳｉＮ薄膜材料，讨论了它们的性能与溅射工艺参数的关系，研究了ＡＩＮ及ＡｌＳｉＮ薄膜对磁光盘材料的保护作用，研究同时表明：ＡＩＮ及ＡｌＳｉＮ保护膜能对磁光材料起干涉增强磁光克尔效应作用。     

共溅射沉积的TbFeCo薄膜

本文介绍了利用射频共溅射技术制备垂直膜面单轴各向异性TbFeCo磁光薄膜,并研究了该薄膜的磁、磁光和读写性能。测试结果表明,这种TbFeCo薄膜的磁光盘其载噪比和擦写循环分别达到48dB和1×10~6次以上。该磁光盘可适用于数据存储。     

计算机辅助Bi-YIG磁光薄膜材料设计的专家系统研究

分析了Bi-YIG磁光薄膜材料生长及其性能特点,着重介绍了计算机辅助设计的专家系统在这一领域的应用——Bi-YIG,磁光薄膜材料的设计及性能预测。     

聚焦光斑磁光极克尔磁滞回线的热效应分析

实验设计并组建了一套磁光极克尔磁滞回线测量装置,该装置可以通过改变照射到样品上的激光功率来改变薄膜样品上被聚焦光斑照射的测试点的温度。同时通过计算模拟了激光照射在TbFeCo磁光薄膜上的温度分布情况,得到了薄膜的矫顽力随照射激光功率的变化关系,由此可以确定薄膜的居里温度和补偿温度。为研究磁光薄膜样品在各种温度条件下,磁光性能的变化以及多层磁光薄膜的磁耦合效应提供了有效的手段。     

稀土-过渡金属磁光介质膜的理论与特性

本文讨论了稀土-过渡金属(以下简写为 RE-TM)非晶合金膜用作磁光记录介质的理论和 TbFeCo 膜的特性。采用射频溅射技术制备出 TbFeCo 非晶垂直磁化膜。膜的垂直各向异性常数K_u 为2.94×10~(5J)/m~3,克尔旋转角θ_k 为0.24-0.29°。得到了θ_k 随过渡金属 Co 含量而变化的曲线。当 Co 在 TM 次网络中含量达50%时,θ_k 有最大值0.29°。在膜被复盖一层 SiO_2或 AlN 之后,θ_k 从0.29°提高到0.55°或1.48°。(TbFeCo+AlN)膜的θ_k 达到1.48°这样高的值,尚未见文献报导。这种膜可以直接用作磁光记录介质。     

采用溅射法制备SrGa2S4：Ce薄膜

采用ＲＦ溅射技术制备了ＳｒＧａ２Ｓ４：Ｃｅ薄膜，并获得了发射波长为４４６ｎｍ的纯蓝色发光，其ＣＩＥ色坐标为ｘ＝０．１４，ｙ＝０．０９，研究了ＳｒＧａ２Ｓ４：Ｃｅ薄膜的激发谱和发射光谱，采用ＸＲＤ测定了薄膜的晶体结构，采用ＳＥＭ观察了薄膜的表面形貌，同时着重研究了后退火气氛，温度和时间对薄膜发光特性的影响。     

Magneto-Optical Faraday Rotation in Ce:YIG Thin Films Incorporating Gold Nanoparticles

We report an experimental study on optical and magneto-optical properties of Ce-substituted yttrium iron garnet thin films incorporating gold nanoparticles. Au nanoparticles were formed by heating Au thin film on cubic quartz and garnet substrates in a vacuum chamber and a Ce:YIG layer was deposited on them by the aid of the pulsed laser deposition method. A large enhancement of the Faraday rotation was obtained in the sample with Au nanoparticles on a quartz substrate and the effect of the substrate material on improving the optical and magneto-optical response of samples were investigated.     

实验优化设计中频反应溅射Al2O3:Ce薄膜发光性质研究

为了得到最优发光的薄膜材料成分参数,采用均匀设计和二次通用旋转组合设计相结合的方法建立发光强度与薄膜中氧含量和Ce³⁺ 离子掺杂浓度的回归方程,并用遗传算法求其取最大值时的解。用中频反应磁控溅射技术制备了相应成分的Al₂O₃:Ce非晶薄膜。在320nm光激发下,获得了较理想的发射光谱,对薄膜发光机理分析表明:薄膜的光致发光来自于Ce³⁺ 离子的5d1激发态向基态4f1的两个劈裂能级的跃迁。发光强度强烈的依赖于薄膜的掺杂浓度和氧元素含量。XPS检测表明,Al₂O₃:Ce薄膜中存在Ce³⁺ 。Ce³⁺ 含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的。薄膜试样的晶体结构应用X射线衍射分析。     

Preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films

Metal/semiconductor thin films are a class of unique materials that are widespread technological applications, particularly in the field of microelectronic devices. Assessment strategies of fractal and tures are of fundamental importance in the development of nano/microdevices. This review presents the preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films including Au/Ge bilayer films and Pd-Ge alloy thin films, which show in the form of fractals and nanocrystals. Firstly, the extended version of Au/Ge thin films for the fractal crystallization of amorphous Ge and the formation of nanocrystals developed with improved micro- and nanostructured features are described in Section 2. Secondly, the nano/microstructural characteristics of Pd/Ge alloy thin films during annealing have been investigated in detail and described in Section 3. Finally, we will draw the conclusions from the present work as shown in Section 4. It is expected that the preparation methodologies developed and the knowledge of nano/microstructural evolution gained in metal/semiconductor thin films, including Au/Ge bilayer films and Pd-Ge alloy thin films, will provide an important fundamental basis underpinning further interdisciplinary research in these fields such as physics, chemistry, materials science, and nanoscience and nanotechnology, leading to promising exciting opportunities for future technological applications involving these thin films.     

Optical,magneto-optical and structural properties of Mn,Bi and MnBi in the form of thin films

The optical and magneto-optical constants of MnBi were measured because of its potential as a medium for magneto-optical information processing. In addition, the optical constants of Mn and Bi were also measured since a knowledge of these constants can be useful for optically monitoring the formation process of MnBi. Thus it is desirable that values of the constants of MnBi and its constituents are reliable. An assessment is therefore given of the reliability of the constants in the literature based on the structural investigations of thin films of these materials.     

Study on Micro-magnetic Simulation of Magnetic State of TbFeCo/Anodized Aluminum Oxide Film

Based on the experimental study of the AAO underlayer??s effect on the magnetic properties and structure, combining micro-magnetic theory as well, TbFeCo/AAO film magnetic properties and magnetic reversal characteristics were analyzed by finite-element micro-magnetic calculation software Magpar. With limited hardware conditions for the computer, a TbFeCo perpendicular magnetization films model with 9×9 matrix particles was simulated. It was found that for the pinning effect of non-magnetic porous AAO barrier film on TbFeCo particle film, the coercivity of isolated TbFeCo/AAO film (2100 kA/m) was larger than the coercivity of continuous TbFeCo film (2000 kA/m). The exchange coupling among the film particles, which was affected by AAO barrier film, led to a longer magnetization reversal time of isolated TbFeCo films than that of continuous ones.