溅射工艺对GdTbFeCo薄膜磁光性能的影响

采用射频磁控溅射法在玻璃基片上成功制得了GdTbFeCo非晶垂直磁化膜,研究了溅射工艺对GdTbFeCo薄膜磁光性能的影响.测量结果表明,基片与靶间距为72mm,溅射功率为75W,溅射气压为0.5Pa,薄膜厚度为120nm时,GdTbFeCo薄膜垂直方向矫顽力为477.6kA/m,克尔角为0.413°.     

电介质保护膜对磁光记录膜的磁和磁光特性的影响

采用射频磁控溅射法制备了非晶TbFeCo薄膜及其保护层AlN薄膜 ,并研究保护层对薄膜的磁和磁光特性的影响。结果表明 ,AlN薄膜可以增强薄膜磁光效应 ,同时 ,AlN薄膜对TbFeCo磁光薄膜的矫顽力、垂直磁各向异性以及本征克尔角都有一定的影响。其原因来自于溅射过程中N和Al原子对TbFeCo薄膜表面的轰击而导致的界面特性的改变     

直流磁控溅射中Ar气压强对TbFeCo磁光薄膜均匀性的影响

本文研究了磁光盘生产中 Ar气压强对直流磁控溅射 Tb Fe Co磁光薄膜均匀性的影响 ,通过调整溅射气压来提高薄膜的厚度均匀性和成分均匀性。在靶 -基片距离为 6 0 0 m m,溅射功率为 6 0 0 W,溅射气压为 0 .6～0 .8Pa的条件下 ,获得了均匀性良好的磁光薄膜 ,并将此工艺参数用于磁光盘的生产     

电介质保护膜对磁光记录膜的磁和磁光特性的影响

采用射频磁控溅射法制备了非晶TbFeCo薄膜及其保护层AlN薄膜，并研究保护层对薄膜的磁和磁光特性的影响。结果表明，AlN薄膜可以增强薄膜磁光效应，同时，AlN薄膜对TbFeCo磁光薄膜的矫顽力、垂直磁各向异性以及本征克尔角都有一定的影响。其原因来自于溅射过程中N和Al原子对TbFeCo薄膜表面的轰击而导致的界面特性的改变。     

TbFe/Fe交换耦合磁致伸缩多层膜的制备

采用双靶磁控溅射法制备了 TbFe/Fe交换耦合磁致伸缩多层膜,考察了热处理时间、Fe层厚度、溅射功率以及Ar气分压对多层膜低场磁致伸缩性能的影响。研究结果表明:TbFe 磁致伸缩层与软磁 Fe层之间通过交换耦合作用以及热处理能明显提高薄膜的软磁性能和磁致伸缩性能;TbFe/Fe多层膜的磁致伸缩性能对热处理时间、Fe 层厚度、溅射功率、Ar 气分压等薄膜沉积参数十分敏感;与 TbFe 磁致伸缩薄膜相比TbFe/Fe交换耦合磁致伸缩多层膜水平方向的矫顽力从 16kA/m降低到 9.6 kA/m。在外加磁场为8000 A/m条件下,TbFe/Fe磁致伸缩多层膜最大磁致伸缩系数可达1.58×10-4。     

CoCrPtNb/CrTi/C玻璃盘基磁记录介质制备与性能

采用CoCrPtNb四元合金作磁记录介质,并使用多层膜结构C/(CoCrPt)100-xNbx/CrTi/C/Glass Substrate制备硬盘磁记录介质.实验结果表明此种薄膜记录介质,即使在室温下溅射,也可得到高达240kA/m的矫顽力;此类薄膜在550℃高温下,经过30min退火后,其矫顽力有较大幅度提高,并在Nb含量为2.4%(原子分数)时达到极大值360kA/m此时剩磁比S=0.90,矫顽力矩形比S*=0.92,从而制成了适于高密度或超高密度磁记录使用的薄膜介质.并详细分析了在室温条件下溅射,此种介质矫顽力与Nb含量变化的关系;并对退火后介质矫顽力与Nb含量变化的关系也进行了讨论.     

多孔氧化铝模板上TbFeCo薄膜的制备及磁性能

利用两步阳极氧化方法在玻璃基板上成功制造孔洞排列有序的多孔氧化铝基底,实验结果表明,孔洞大小范围在10～50nm,孔洞大小可通过氧化电压和氧化温度进行调节,随氧化电压和温度降低而减小.多孔氧化铝底层对其上溅射生长的TbFeCo磁性能有重要影响,多孔氧化铝基底对TbFeCo的畴壁运动有较强的钉扎作用,增大其矫顽力,矫顽力随孔洞的直径增大而减小,从15nm时的4.5×105A/m下降到40nm时的2.8×105A/m,并逐步趋近无AAO膜板时TbFeCo的矫顽力.同时多孔氧化铝基底的引入,使TbFeCo薄膜的矫顽力机制从以磁晶各向异性为主改变为以形状各向异性为主.     

磁控溅射制备TbFeCo薄膜及其光学和磁光性质研究

采用放电等离子烧结(SPS)TbFeCo合金靶,分别在Si衬底和K9玻璃衬底上磁控溅射制备了磁光薄膜TbFeCo/Si和TbFeCo/K9;利用扫描型可变入射角全自动椭偏仪,室温下测量了复介电常数谱,测量结果表明两样品介电函数值有较大差异,说明衬底对薄膜的光学性质有重要影响.用磁光Kerr谱仪,在室温下分别测量了TbFeCo薄膜的极向Kerr回线和横向Kerr回线,发现所制备TbFeCo薄膜不具有垂直磁化性质,而呈现出面内磁化性质.     

Ag底层对TbFeCo薄膜磁性能的影响

采用射频磁控溅射法在玻璃基片上制备了TbFeCo/Ag非晶垂直磁化膜，研究了Ag底层厚度对TbFeCo薄膜磁性能的影响。原子力显微镜、振动样品磁强计与磁光盘测试仪测量结果表明：薄的银底层具有较高的表面粗糙度可以显著增大TbFeCo薄膜的矫顽力，改善TbFeCo薄膜的磁光温度特性，该薄膜有望用作高密度垂直记录介质与光磁混合记录介质。     

Ce掺杂对TbFeCo材料磁光性能影响的研究

采用射频磁控溅射方法制备了TbFeCo非晶磁光薄膜，并在TbFeCo中引入轻稀土元素Ce，测试了薄膜的磁光性能。研究了薄膜成分对其磁光性能的影响。结果表明；在TbFeCo薄膜中掺入少量Ce时，薄膜的磁光克尔角及矫顽力都有所提高，矩形度也增加了。但随Ce掺入量的增加，薄膜的磁光性能发生恶化，较好的掺杂在10.31?左右。     

Study on Micro-magnetic Simulation of Magnetic State of TbFeCo/Anodized Aluminum Oxide Film

Based on the experimental study of the AAO underlayer??s effect on the magnetic properties and structure, combining micro-magnetic theory as well, TbFeCo/AAO film magnetic properties and magnetic reversal characteristics were analyzed by finite-element micro-magnetic calculation software Magpar. With limited hardware conditions for the computer, a TbFeCo perpendicular magnetization films model with 9×9 matrix particles was simulated. It was found that for the pinning effect of non-magnetic porous AAO barrier film on TbFeCo particle film, the coercivity of isolated TbFeCo/AAO film (2100 kA/m) was larger than the coercivity of continuous TbFeCo film (2000 kA/m). The exchange coupling among the film particles, which was affected by AAO barrier film, led to a longer magnetization reversal time of isolated TbFeCo films than that of continuous ones.     

Obliquely sputtered TbFe giant magnetostrictive films with in-plane anisotropy

We have found that in-plane magnetostriction characteristics at low fields can be greatly improved by an oblique sputtering technique. We report a study of deposition of in-plane anisotropic TbFe giant magnetostrictive films by dc magnetron oblique sputtering, including the influences of deposition angle on TbFe film magnetic and magnetostrictive performances. The in-plane magnetization of TbFe films at 1600 kA/m is drastically increased with a change of deposition angles from 90/spl deg/ to 15/spl deg/. Magnetic domain structures explored by magnetic force microscopy indicate that the easy magnetization directions of the films can be gradually changed from perpendicular to the film plane at sufficiently shallow deposition angles. The in-plane magnetostrictive coefficients /spl lambda/ at 16 kA/m also can be increased by decreasing the deposition angles from 90/spl deg/ to 15/spl deg/. The significant variation in the in-plane magnetic and magnetostrictive performances can be explained by the decrease of perpendicular anisotropy of TbFe films.     

Effect of Pt content on structure and magnetic properties of Fe100−xPtx films deposited on thermally oxidized Si substrates by rapid thermal annealing

Fe_100-xPt_x films with Pt contents (x) = 29–65 at.% were deposited directly onto thermally oxidized Si(100) substrate by dc magnetron sputtering. The films were then post-annealed at 700 °C for 3 min by rapid thermal annealing (RTA) at a high heating ramp rate of 100 °C/s. Experimental results show that Fe₃Pt film displayed (111) preferred orientation and tended towards in-plane magnetic anisotropy when the Pt content was 29 at.%. When the Pt content was increased to 49 at.%, the FePt film inclined towards (001)-texture and perpendicular magnetic anisotropy. Its out-of-plane coercivity (Hc_⊥), saturation magnetization (M_s) and out-of-plane squareness (S_⊥) reached 1010 kA/m, 0.47 T and 0.8, respectively. These results reveal its significant potential as perpendicular magnetic recording media for high-density recording. Upon further increasing the Pt content to 65 at.%, the coercivity of the films decreased drastically to below 65 kA/m and tended towards in-plane magnetic anisotropy.     

高矫顽力SmCo/Cr薄膜的制备、结构及磁性

通过磁控溅射采用基板水冷方法制备ＳｍＣｏ／Ｃｒ双层膜。薄膜的成分及厚度、薄膜的制备条件,如溅射时的氩气压对薄膜的磁性有较大的影响。通过仔细控制这些参数,制备出矫顽力高达１８１ｋＡ／ｍ的薄膜。     

条纹图形Heusler合金CoFeMnSi薄膜的制备及其磁特性研究

以CoFeMnSi作为研究对象,对其进行图形化设计,以研究图形化CoFeMnSi薄膜的磁学特性。利用感光溶胶-凝胶法和激光干涉法制得条纹图形ZrO2薄膜,之后利用磁控溅射法在其表面溅射沉积CoFeMnSi,以达到制得图形化CoFeMnSi磁性薄膜的目的,并对其表面形貌和磁学特性进行了表征。采用金相显微镜分析验证CoFeMnSi薄膜继承了ZrO2的条纹图形结构,条纹图形周期约为2μm;面内磁性测量显示薄膜398 kA/m磁场下的磁化强度与外磁场和条纹夹角θ呈180°周期性变化关系,且磁化强度介于390~440 kA/m;利用CoFeMnSi平膜面内磁化强度及面外磁化强度与外加磁场方向的变化关系,解释了条形薄膜磁化强度的θ角度依赖关系;采用磁力显微镜观察到磁畴结构形态为蜂窝状,磁畴尺寸大约1~2μm。     

离子束溅射制备Co/Pt多层膜的结构和磁性

采用离子束溅射技术制备了Co／Pt多层膜，并研究了多层膜的结构和磁性随Co层厚度（tCo）或Pt层厚度（tPt）的变化关系。结果表明Co层呈现出hcp结构的（002）织构，Pt层表现出fcc结构的（111）织构。当Co层和Pt层都比较薄时，界面有Co-Pt的化合物形成。当tPt=2．4nm而tCo在0．6～2．4nm变化时，样品的磁矫顽力（Hc）随tCo增加而下降，饱和磁化强度（Ms）随tCo增加而增加。当tCo=1．2nm而tPt在1．2～4．8nm变化时，Hc呈现先升后降的变化，Ms随tPt增大而减小。样品的Hc还受调制周期（D）和周期数ny的影响，通过对Co层和Pt层的厚度比、调制周期、周期数的设计，可以获得较大的磁矫顽力。     

Compositional dependence of magnetoresistance in TbFeCo amorphous film

The dependence of Tb and Co concentration on the magnetoresistance (MR) of TbFeCo amorphous films with perpendicular magnetic anisotropy have been studied at room temperature. Tb/sub x/Fe/sub (88-x-y)/Co/sub y/ films (where x=15--37 at% and y=5--25 at%) with thickness of 200 nm are deposited by dc-magnetron sputtering. The MR ratio is sensitively dependent on the Tb concentration. The MR ratio is increased up to about 2.8% for a Tb concentration of about 22.4 at% then decreased for more Tb content. No significant effect of Co concentration on the MR ratio has been observed. The relation between MR ratio and film composition can be ascribed to the dependence of the domain wall width on the film concentration. The domain wall width decreases with an increase in Tb concentration and again increases for more Tb content showing its minimum value at about 22.4 at % of Tb concentration. It may be considered that the observed MR is contributed from the domain wall.     

NdFe_(7-x)Mo_x薄膜的制备和磁性研究

利用对向靶溅射，同时对基片进行退火处理的方法，在玻璃基片上成功地制备出了NdFe7-xMox（x=0，0．5）薄膜，并对其进行了磁性研究。VSM测量结果表明，Mo掺入导致了材料矫顽力Hc的增大，却相应降低了饱和磁化强度Ms。随着退火温度T的提高，Hc随之增大，当T=573K时，出现一极大值为37．8kA／m，此时的热磁测量表明，样品具有最高居里温度，Tc=775K。