共查询到19条相似文献,搜索用时 484 毫秒
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各向异性KOH溶液腐蚀硅尖具有简单、易于实现、成本低廉、(100)晶面腐蚀速率均匀等优点.然而在40%KOH溶液中削角速率和(100)晶面的腐蚀速率之比约为1.6~1.9,并且该比值随着KOH浓度的减小而增大.如此高的削角速率会给AFM探针的制作带来技术上的困难.而对腐蚀场发射器件和隧道式传感器的硅尖阵列来说,高的削角速率会减少单位面积内的硅尖数量.本文通过在氢氧化钾(KOH)或者四甲基氢氧化胺(TMAH)溶液中添加适当的添加剂(如异丙醇(IPA)、1,5戊二醇或碘)降低了削角速率,在较小直径的掩膜下腐蚀出高硅尖.实验结果还表明:在TMAH基腐蚀液中每个硅尖的八个快腐蚀面的削角速率几乎相等,硅尖直径偏差较KOH溶液中腐蚀的硅尖直径偏差更小,因此成品率得到了提高. 相似文献
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为制备用于X射线闪烁屏的高开口面积比硅微通道阵列,研究了四甲基氢氧化铵(TMAH)溶液温度和质量分数对硅(100)晶面和(110)晶面腐蚀速率的影响.通过金相显微镜观测硅微通道端面尺寸并计算腐蚀速率,分析了硅(100)晶面和(110)晶面腐蚀速率比对硅微通道阵列孔形的影响,探讨了TMAH溶液温度和质量分数与硅微通道阵列开口面积比的关系.研究表明,硅(100)晶面和(110)晶面的腐蚀速率比是影响硅微通道阵列开口面积比的主要因素.当硅(100)晶面与(110)晶面腐蚀速率比大于√2时,得到具有高开口面积比的正方形硅微通道阵列.使用质量分数为1%的TMAH溶液在40℃的溶液温度下,制备出开口面积比大于81%的正方形硅微通道阵列.通过高温填充CsI (TI)制备出基于硅微通道的X射线闪烁屏,X射线成像结果表明通道整形技术有助于提高闪烁屏的性能. 相似文献
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本文报道了水热反应条件对BaTiO3纳米晶形成的影响,尤其是其原子尺度的表面结构。研究结果表明,Ba/Ti摩尔比较大的前驱体溶液中,易获得立方状大尺寸(~260nm)的BaTiO3纳米晶体;而采用乙二醇作为水热反应介质,可获得小尺寸弱圉聚的BaTiO3纳米晶(与纯水溶液或水-乙二醇的混合液相比较)。立方状或长方体状的BaTiO3纳米晶外表面被{100}晶面所包围,{110}晶面条纹与纳米晶体的边界相交呈45°角。在粗糙的BaTiO3纳米晶表面,常可观察到台面台阶扭折(terrace—ledge—kink)的表面结构,台面(terrace)和台阶(1edge)位于{100}晶面。由于表面结构的重构,{110}晶面通常被分解成由许多小的{100}晶面相连接而成的扭折结构。而在球状的BaTiO3纳米晶边缘,没有观察到表面台阶结构。 相似文献
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将非金属元素碘作为硅的KOH腐蚀液的添加物,在对(100)和(110)单晶硅片的各向异性腐蚀中,获得了更为丰富的异向腐蚀特性和更为光滑的腐蚀表面。当温度在95℃,KOH腐蚀液中碘的摩尔比为0.5时,得到了粗糙度均小于10nm的Si-(100)和(110)光洁表面,两晶面的腐蚀速率均为1.4μm/min。这两晶面在相同的条件下同时达到最佳光洁度,说明腐蚀速率是获得高光洁度表面的关键。实验还证明碘在热碱溶液中的稳定性和持久性要高于现在已被大量研究的双氧水和过硫等,尤其是对硅(110)表面光洁度的改善具有积极的促进作用。 相似文献
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《Solid-State Circuits, IEEE Journal of》1974,9(3):111-117
Advantageous use of the silicon, diamond cubic crystal structure is described from the aspect of orientation-dependent etching. The use of this technology can affect device characteristics, device and circuit isolation, circuit element densities, and process control. Several laboratories have reported advantageous use of }100{ oriented silicon. This paper discusses the advantageous use of both {100} and {110} silicon orientations. In particular, the {110} technology is discussed from a high packing density aspect as applied to the processing and characteristics of silicon diode array targets with improved television blooming control. 相似文献
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《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1969,57(9):1469-1476
Silicon crystallographic orientation effects on semiconductor processing from single crystal growth through completed devices or circuits have been studied. The preferred octahedral crystal habit of silicon provides for stable crystal growth on the {111} plane, but the other low-index planes, {110} and {100}, are becoming more commonly used, in spite of greater difficulty in growth and processing of these crystals. Chemical and physical properties such as etch rates and Young's modulus are affected by orientation. The effect of crystal orientation on technologies such as diffusion under film (DUF), dielectric isolation, epitaxy, selective etch and epitaxial refill, and simultaneous deposition of single crystal and polycrystal silicon are presented. In addition, orientation effects on processes of oxidation, diffusion, alloying, and scribing are discussed. 相似文献
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C. C. Li W. P. Cai B. Q. Cao F. Q. Sun Y. Li C. X. Kan L. D. Zhang 《Advanced functional materials》2006,16(1):83-90
Single‐crystal gold nanosheets, with triangular, hexagonal, or truncated triangular shapes, from several to tens of micrometers across and tens of nanometers thick, have been successfully synthesized in high yield via a simple and low‐cost chemical route in an ethylene glycol solution, on the basis of a polyol process. The planar surfaces of the Au nanosheets are atomically flat and correspond to {111} planes; the lateral surfaces are {110} planes. The nanosheets show strong optical absorption in the near infrared region of the electromagnetic spectrum. Both the ethylene glycol and the surfactant polyvinylpyrrolidone (PVP), in the solution play important roles in the formation of the Au nanosheets. The concentrations of the precursors (PVP, HAuCl4) and the reaction temperature are also crucial to the morphology and size of the final product. The formation of such large, single‐crystal nanosheets is explained by the preferential adsorption of some species of molecules from the solution onto the {111} planes of Au nuclei, and the connection of small, triangular nanosheets. These nanosheets could be used easily, for example, in gas sensors, in the fabrication of nanodevices and substrate materials, in property studies, and also for inducing hypothermia in tumors. 相似文献
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A simple, high yield, method for the fabrication of sharp silicon tips is described. A triangular etch mask design is used to ensure that the tip forms with a single point. An anisotropic wet etch gives rise to a tip that continues to “self-sharpen” after the etch mask is released. The tip geometry comprises three converging {1 1 3} planes towards the apex with {3 1 3} planes forming at the base. The apex of each tip typically has a radius of curvature of <5 nm, which can be reduced to <2 nm by a subsequent oxide sharpening process. Tips of this kind have been successfully integrated into the fabrication of atomic force microscopy probes. 相似文献
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微反射镜和光纤自对准V型槽的制作 总被引:2,自引:1,他引:1
用纯KOH水溶液和KOH +IPA混合水溶液在 ( 1 0 0 )硅片上沿 <1 0 0 >方向上腐蚀所暴露的平面是不同的。纯KOH水溶液中总是能暴露与衬底垂直的 {1 0 0 }面 ,在KOH +IPA溶液中 ,随着KOH的浓度不同将暴露 {1 1 0 }和 {1 0 0 }面。使用KOH浓度为 50 %的KOH +IPA溶液 ,在 ( 1 0 0 )硅片上一次掩模制作微反射镜和光纤自对准V型槽 ,微镜的表面粗糙度低于 1 0nm。 相似文献
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Low‐dimensional metal halides at molecular level, which feature strong quantum confinement effects from intrinsic structure, are emerging as ideal candidates in optoelectronic fields. However, developing stable and nontoxic metal halides still remains a great challenge. Herein, for the first time, high‐crystalline and highly stable CsCu2I3 single crystal, which is acquired by a low‐cost antisolvent vapor assisted method, is successfully developed to construct high‐speed (trise/tdecay = 0.19 ms/14.7 ms) and UV‐to‐visible broadband (300–700 nm) photodetector, outperforming most reported photodetectors based on individual all‐inorganic lead‐free metal halides. Intriguingly, facet‐dependent photoresponse is observed for CsCu2I3 single crystal, whose morphology consists of {010}, {110}, and {021} crystal planes. The on–off ratio of {010} crystal plane is higher than that of {110} crystal plane, mainly owing to lower dark current. Furthermore, photogenerated electrons are localized in twofold chains created by [CuI4] tetrahedra, leading to relatively small effective mass and fast transport mobility along the 1D transport pathway. Anisotropic carrier transport characteristic is related to stronger confinement and higher electron density for {110} crystal planes. This work not only demonstrates the great potential of CsCu2I3 single crystal in high‐performance optoelectronics, but also gives insights into 1D electronic structure associated with fast photoresponse and high anisotropy. 相似文献
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Xinbo Yang K. Fujiwara K. Maeda J. Nozawa H. Koizumi S. Uda 《Progress in Photovoltaics: Research and Applications》2014,22(5):574-580
The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three‐dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
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S. I. Molina G. Aragón R. García Y. González L. González F. Briones 《Journal of Electronic Materials》1993,22(5):567-572
A study by high resolution electron microscopy and conventional transmission electron microscopy of the process of closure
of antiphase boundaries (APB) in atomic layer molecular beam epitaxy (ALMBE) grown GaAs on silicon is reported. A parallelepipedical
shape, closed at the top by another boundary with a semispheric shape, is proposed for the during growth suppressed APBs in
GaAs epilayers. Antiphase boundaries are mostly located in {100} plans. Sixty degree dislocations are involved in the process
of bending of APBs from {110} to {11n} planes; this bending is the initial step which must take place to get a single domain
by interaction of two APBs. The proposed shape for closed APBs is in good agreement with the quasi two-dimensional growth
observed for GaAs grown on silicon by ALMBE. 相似文献
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Ting‐Yuan Chang Hyunseok Kim Brian T. Zutter Wook‐Jae Lee Brian C. Regan Diana L. Huffaker 《Advanced functional materials》2020,30(30)
Monolithic integration of III–V nanowires on silicon platforms has been regarded as a promising building block for many on‐chip optoelectronic, nanophotonic, and electronic applications. Although great advances have been made from fundamental material engineering to realizing functional devices, one of the remaining challenges for on‐chip applications is that the growth direction of nanowires on Si(001) substrates is difficult to control. Here, catalyst‐free selective‐area epitaxy of nanowires on (001)‐oriented silicon‐on‐insulator (SOI) substrates with the nanowires aligned to desired directions is proposed and demonstrated. This is enabled by exposing {111} planes on (001) substrates using wet chemical etching, followed by growing nanowires on the exposed planes. The formation of nanowire array‐based bottom‐up photonic crystal cavities on SOI(001) and their coupling to silicon waveguides and grating couplers, which support the feasibility for on‐chip photonic applications are demonstrated. The proposed method of integrating position‐ and orientation‐controllable nanowires on Si(001) provides a new degree of freedom in combining functional and ultracompact III–V devices with mature silicon platforms. 相似文献