Sub-10 nm patterning using EUV interference lithography

Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference lithography based on interference transmission gratings has emerged as a powerful tool for industrial and academic research. In this paper, we demonstrate nanopatterning with sub-10 nm resolution using this technique. Highly efficient and optimized molybdenum gratings result in resolved line/space patterns down to 8 nm half-pitch and show modulation down to 6 nm half-pitch. These results show the performance of optical nanopatterning in the sub-10 nm range and currently mark the record for photon-based lithography. Moreover, an efficient phase mask completely suppressing the zeroth-order diffraction and providing 50 nm line/space patterns over large areas is evaluated. Such efficient phase masks pave the way towards table-top EUV interference lithography systems.     

Sensitivity study of two high-throughput resolution metrics for photoresists

The resolution of chemically amplified resists is becoming an increasing concern, especially for lithography in the extreme ultraviolet (EUV) regime. Large-scale screening is currently under way to identify resist platforms that can support the demanding specifications required for EUV lithography. Current screening processes would benefit from the development of metrics that can objectively quantify resist resolution in a high-throughput fashion. Here we examine two high-throughput metrics for resist resolution determination. After summarizing their details and justifying their utility, we characterize the sensitivity of both metrics to known uncertainties in exposure tool aberrations and focus control. For an implementation at EUV wavelengths, we report aberration and focus-limited error bars in extracted resolution of approximately 1.25 nm rms for both metrics, making them attractive candidates for future screening and downselection efforts.     

Advanced patterning techniques for nanodevice fabrication

The key elements in the fabrication of future devices are lithography and pattern transfer. The continuous advances in miniaturization and increasing integration densities are a direct result of improved lithographic resolution and overlay accuracy. Electron beam direct write and e-beam projection lithography are potential candidates for the mass production of microelectronic devices with critical dimensions below 100 nm. To realize these nanometer patterns by this technology, the performance of exposure tools and resist materials should be increased. In this paper, the method of direct write e-beam lithography is demonstrated and critical issues are discussed.     

Magnetization reversal in Pt/Co(0.5 nm)/Pt nano-platelets patterned by focused ion beam lithography

Arrays of ultrathin Pt/Co(0.5 nm)/Pt nano-platelets with lateral sizes ranging from 30 nm to 1 μm have been patterned by focused ion beam (FIB) lithography under a weak Ga(+) ion fluence. From polar magneto-optical Kerr microscopy it is demonstrated that nano-platelets are ferromagnetic with perpendicular anisotropy down to a size of 50 nm. The irradiation process creates a magnetically soft ring at the nano-platelet periphery in which domain nucleation is initiated at a low field. The magnetization reversal in nano-platelets can be interpreted using a confined droplet model. All of the results prove that ultimate FIB patterning is suitable for preparing discrete magnetic recording media or small magnetic memory elements and nano-devices.     

Plasmonic nearfield scanning probe with high transmission

Nearfield scanning optical microscopy (NSOM) offers a practical means of optical imaging, optical sensing, and nanolithography at a resolution below the diffraction limit of the light. However, its applications are limited due to the strong attenuation of the light transmitted through the subwavelength aperture. To solve this problem, we report the development of plasmonic nearfield scanning optical microscope with an efficient nearfield focusing. By exciting surface plasmons, plasmonic NSOM probes are capable of confining light into a 100 nm spot. We show by nearfield lithography experiments that the intensity at the near field is at least one order stronger than the intensity obtained from the conventional NSOM probes under the same illumination condition. Such a high efficiency can enable plasmonic NSOM as a practical tool for nearfield lithography, data storage, cellular visualization, and many other applications requiring efficient transmission with high resolution.     

Forbidden pitches in sub-wavelength lithography and their implications on design

Moore’s Law has been the most important benchmark for microelectronics development over the past four decades. It has been interpreted to mean that critical dimensions (CD) of a design must shrink geometrically over time. The chip-level integration of devices has been possible through concurrent improvement in lithographic resolution. The lithographic resolution was primarily improved by moving deeper into ultraviolet spectrum of light. However, the wavelength of the optical source used for lithography has not improved for nearly a decade. This has lead to the development of sub-wavelength lithography. The diffraction effects of sub-wavelength lithography were offset by optical proximity correction (OPC), phase shift masking (PSM) and impending move to immersion lithography. Unfortunately, one time benefits from each of these resolution enhancement techniques (RET) have nearly exhausted. In this paper, we explore one important diffraction aspect of sub-wavelength lithography viz. the forbidden pitch phenomenon and its implication on future designs. We studied Forbidden pitches in context of 65 and 45 nm technologies using aerial imaging simulation. Aerial imaging simulation is computationally expensive and is not possible to perform on entire layout structures. Based on results from our simulations on selected patterns, we observe that in absence of any other resolution enhancement technique, many of the current layout patterns will be disallowed in 45 nm technology. Such restrictions significantly mitigate the benefit of migration to 45 nm technology in terms of area, power and performance of a design. We further show that even structured gate array based designs are not immune to this problem.     

High-Speed Parallel Plasmonic Direct-Writing Nanolithography Using Metasurface-Based Plasmonic Lens

Simple and efficient nanofabrication technology with low cost and high flexibility is indispensable for fundamental nanoscale research and prototyping. Lithography in the near field using the surface plasmon polariton (i.e., plasmonic lithography) provides a promising solution. The system with high stiffness passive nanogap control strategy on a high-speed rotating substrate is one of the most attractive high-throughput methods. However, a smaller and steadier plasmonic nanogap, new scheme of plasmonic lens, and parallel processing should be explored to achieve a new generation high resolution and reliable efficient nanofabrication. Herein, a parallel plasmonic direct-writing nanolithography system is established in which a novel plasmonic flying head is systematically designed to achieve around 15 nm minimum flying-height with high parallelism at the rotating speed of 8–18 m·s⁻¹. A multi-stage metasurface-based polarization insensitive plasmonic lens is proposed to couple more power and realize a more confined spot compared with conventional plasmonic lenses. Parallel lithography of the nanostructures with the smallest (around 26 nm) linewidth is obtained with the prototyping system. The proposed system holds great potential for high-freedom nanofabrication with low cost, such as planar optical elements and nano-electromechanical systems.     

Resolution Limit in Plasmonic Lithography for Practical Applications beyond 2x‐nm Half Pitch

A theoretical model is introduced to evaluate the ultimate resolution of plasmonic lithography using a ridge aperture. The calculated and experimental results of the line array pattern depth are compared for various half pitches. The theoretical analysis predicts that the resolution of plasmonic lithography strongly depends on the ridge gap, achieving values under 1x nm with a ridge gap smaller than 10 nm. A micrometer‐scale circular contact probe is fabricated for high speed patterning with high positioning accuracy, which can be extended to a high‐density probe array. Using the circular contact probe, high‐density line array patterns are recorded with a half pitch up to 22 nm and good agreement is obtained between the theoretical model and experiment. To record the high density line array patterns, the line edge roughness (LER) is reduced to ≈17 nm from 29 nm using a well‐controlled developing process with a smaller molecular weight KOH‐based developer at a temperature below 10°C.     

电子束散射角限制投影光刻掩模研制

掩模制作是电子束散射角限制投影光刻(SCALPEL)的关键技术。通过优化工艺,制作出具有“纳米硅镶嵌结构”的低应力SiNx薄膜作为支撑;开发了电子束直写胶图形的加法工艺,在支撑薄膜上得到清晰的钨 / 铬散射体图形。研制出的SCALPEL掩模,其晶片尺寸为80mm,图形线宽达到0.1m,经缩小投影曝光得到78nm的图形分辨力。     

应用于纳米制造的新型电子束抗蚀剂Calixarene的工艺研究

为了满足电子束光刻（EBL）对高分辨率、性能优秀抗蚀剂的需求,研究了将Calixarene衍生物作为电子束抗蚀剂在胶液配制、电子束曝光及显影等工艺过程中的相关技术.其中电子束曝光实验在JEOL JBX-5000LS系统上进行.实验结果表明,在入射电子能量50 keV、束流50 pA的条件下,Calixarene可以方便地形成50 nm的单线、50nm等线宽与间距的图形结构.通过与常用电子束抗蚀剂的对比,总结了Calixarene在电子束光刻性能上的优缺点,并分析了其成因.作为一种新型的高分辨率电子束光刻抗蚀剂,Calixarene有望应用在纳米结构制造、纳米尺寸器件及电路的研制等领域.     

High-efficiency ordered silicon nano-conical-frustum array solar cells by self-powered parallel electron lithography

Nanostructured silicon thin film solar cells are promising, due to the strongly enhanced light trapping, high carrier collection efficiency, and potential low cost. Ordered nanostructure arrays, with large-area controllable spacing, orientation, and size, are critical for reliable light-trapping and high-efficiency solar cells. Available top-down lithography approaches to fabricate large-area ordered nanostructure arrays are challenging due to the requirement of both high lithography resolution and high throughput. Here, a novel ordered silicon nano-conical-frustum array structure, exhibiting an impressive absorbance of 99% (upper bound) over wavelengths 400-1100 nm by a thickness of only 5 μm, is realized by our recently reported technique self-powered parallel electron lithography that has high-throughput and sub-35-nm high resolution. Moreover, high-efficiency (up to 10.8%) solar cells are demonstrated, using these ordered ultrathin silicon nano-conical-frustum arrays. These related fabrication techniques can also be transferred to low-cost substrate solar energy harvesting device applications.     

小型微纳米图形电子束曝光制作系统(英文)

为了满足科学实验过程中对制作半导体器件和微纳米结构的需要,同时避免受到昂贵的工业级电子束曝光(electron beam lithography,EBL)机的条件制约,构建了一种基于普通扫描电子显微镜(scanning electron microsco-py,SEM)的桌面级小型电子束曝光系统.建立了以浮点DSP为控制核心的高速图形发生器硬件系统.利用线性计算方法实现了电子束曝光场的增益、旋转和位移的校正算法.在本曝光系统中应用了新型压电陶瓷电机驱动的精密位移台来实现纳米级定位.利用此位移台所具有的纳米定位能力,采用标记追逐法实现了电子束曝光场尺寸和形状的校准.电子束曝光实验结果表明,场拼接及套刻精度误差小于100 nm.为了测试曝光分辨率,在PMMA抗蚀剂上完成了宽度为30 nm的密集线条曝光实验.利用此系统,在负胶SU8和双层PMMA胶表面进行了曝光实验;并通过电子束拼接和套刻工艺实现了氮化物相变存储器微电极的电子束曝光工艺.     

Two in One: Light as a Tool for 3D Printing and Erasing at the Microscale

The ability to selectively remove sections from 3D‐printed structures with high resolution remains a current challenge in 3D laser lithography. A novel photoresist is introduced to enable the additive fabrication of 3D microstructures at one wavelength and subsequent spatially controlled cleavage of the printed resist at another wavelength. The photoresist is composed of a difunctional acrylate cross‐linker containing a photolabile o‐nitrobenzyl ether moiety. 3D microstructures are written by photoinduced radical polymerization of acrylates using Ivocerin as photoinitiator upon exposure to 900 nm laser light. Subsequent scanning using a laser at 700 nm wavelength allows for the selective removal of the resist by photocleaving the o‐nitrobenzyl group. Both steps rely on two‐photon absorption. The fabricated and erased features are imaged using scanning electron microscopy (SEM) and laser scanning microscopy (LSM). In addition, a single wire bond is successfully eliminated from an array, proving the possibility of complete or partial removal of structures on demand.     

Towards creation of iron nanodots using metastable atom lithography

Iron structures with dimensions of the order of the minimum domain size (～50?nm at room temperature) may provide us with a new high-density data storage method. Limitations have been observed in existing depositional atom lithography schemes for producing these structures. We present a proof-in-principle experiment using an alternative scheme based upon direct exposure metastable neon-atom lithography. Iron structures with dimensions of the order of 7.5?μm are produced by this method. Extension of this work to the application of standing-wave atom lithography and laser cooling flux enhancement techniques is discussed as a method for reducing dimensions to a size equating to a dot array density of around 0.1?Gbit?mm(-2).     

Large-scale Patterning of Hydrophobic Silicon Nanostructure Arrays Fabricated by Dual Lithography and Deep Reactive Ion Etching

Nano-Micro Letters - We describe a simple but efficient technique to fabricate large-scale arrays of highly ordered silicon nanostructures. By coupling dual lithography using light of 351.1 nm...     

Towards excimer-laser-based stereolithography: a rapid process to fabricate rigid biodegradable photopolymer scaffolds

We demonstrate high-resolution photocross-linking of biodegradable poly(propylene fumarate) (PPF) and diethyl fumarate (DEF) using UV excimer laser photocuring at 308 nm. The curing depth can be tuned in a micrometre range by adjusting the total energy dose (total fluence). Young''s moduli of the scaffolds are found to be a few gigapascal, high enough to support bone formation. The results presented here demonstrate that the proposed technique is an excellent tool for the fabrication of stiff and biocompatible structures on a micrometre scale with defined patterns of high resolution in all three spatial dimensions. Using UV laser photocuring at 308 nm will significantly improve the speed of rapid prototyping of biocompatible and biodegradable polymer scaffolds and enables its production in a few seconds, providing high lateral and horizontal resolution. This short timescale is indeed a tremendous asset that will enable a more efficient translation of technology to clinical applications. Preliminary cell tests proved that PPF : DEF scaffolds produced by excimer laser photocuring are biocompatible and, therefore, are promising candidates to be applied in tissue engineering and regenerative medicine.     

Fabrication of high-resolution large-area patterns using EUV interference lithography in a scan-exposure mode

Limited beam spot size is a major limitation of interference lithography. This limits the area of patterning and reduces the pattern homogeneity. We describe a scanning exposure technique to circumvent this problem. We show the generation of uniform and seamless gratings with half-pitches down to 35 nm over an area of several mm(2) using EUV interference lithography. The presented technique offers a fast and cost-effective method of fabricating one- and two-dimensional periodic nanostructures with improved uniformity and increased patterning area.     

A high resolution water soluble fullerene molecular resist for electron beam lithography

Traditionally, many lithography resists have used hazardous, environmentally damaging or flammable chemicals as casting solvent and developer. There is now a strong drive towards processes that are safer and more environmentally friendly. We report nanometre-scale patterning of a fullerene molecular resist film with electron beam lithography, using water as casting solvent and developer. Negative tone behaviour is demonstrated after exposure and development. The sensitivity of this resist to 20?keV electrons is 1.5 × 10(-2)?C?cm(-2). Arrays of lines with a width of 30-35?nm and pitches of 200 and 400?nm, and arrays of dots with a diameter of 40?nm and a pitch of 200?nm have been patterned at 30?keV. The etch durability of this resist was found to be ～2 times that of a standard novolac based resist. Initial results of the chemical amplification of this material for enhanced sensitivity are also presented.     

Influence of the mask magnification on imaging in hyper-NA lithography

Argon fluoride laser (ArF) lithography using immersion technology has the potential to extend the application of optical lithography to 45 nm half-pitch and possibly beyond. By keeping the same 4x magnification factor, the dimensions of the structures on masks are becoming comparable to the exposure wavelength or even smaller. The polarization effect induced by mask features is, however, an issue. The introduction of a larger mask magnification should be strongly considered when poor diffraction efficiencies from subwavelength mask features and the resulting image degradation would be encountered in hyper-NA lithography. The dependence of the diffraction efficiencies on mask pitch and illuminating angle are evaluated. The near-field intensity and phase distributions from the mask are calculated. The imaging performance of 4x and 8x masks for the sub-45 nm node are explored. A rigorous coupled-wave analysis is developed and employed to analyze the optical diffraction from the 3D topographic periodic features.     

High-resolution electron beam lithography and DNA nano-patterning for molecular QCA

Electron beam lithography (EBL) patterning of poly(methylmethacrylate) (PMMA) is a versatile tool for defining molecular structures on the sub-10-nm scale. We demonstrate lithographic resolution to about 5 nm using a cold-development technique. Liftoff of sub-10-nm Au nanoparticles and metal lines proves that cold development completely clears the PMMA residue on the exposed areas. Molecular liftoff is performed to pattern DNA rafts with high fidelity at linewidths of about 100 nm. High-resolution EBL and molecular liftoff can be applied to pattern Creutz-Taube molecules on the scale of a few nanometers for quantum-dot cellular automata.