我国600m直径碳化硅主镜光学加工获突破

上海技物所公共技术研究室经过一年艰苦攻关,在型号任务600mm直径碳化硅主镜光学加工取得突破,根据光学精度特性分析和检测,其面形精度、表面粗糙度、焦距等关键参数均达到或优于设计要求,特别是面形精度实测为1／8λ（pv）、0．014λ（rms）,已达到国内先进水平。     

利用人工神经网络的测量表面粗糙度和位移的光纤传感器

利用人工神经网络的测量表面粗糙度和位移的光纤传感器Ｋ．Ｚｈａｎｇ，等１．引言表面粗糙度和位移是制造业产品的两大重要特征。迄今在表面粗糙度和位移测量方面已进行了大量的工作，最经典的测量方法是机械接触法。在过去的十年中，工业应用中开始使用光学法测量表面粗...     

微细立铣削硬铝2A12表面粗糙度分析与预测

利用自行研制的精密三轴联动立式铣床（300mm×300mm×290mm）,微径硬质合金两刃平头立铣刀（直径0．1～0．5mm）微立铣硬铝2A12,观察微铣刀悬伸量、直径、轴向切深和每齿进给量对加工表面粗糙度的影响．表面粗糙度由激光扫描共聚焦显微镜（奥林巴斯OLS3000）测量．结果发现微径立铣刀的直径和悬伸量对表面粗糙度的影响大于轴向切深和每齿进给量．另外,在刃口半径尺寸效应的作用下,表面粗糙度并不一直随每齿进给量的减小而减小．基于响应曲面法建立了表面粗糙度的二阶预测模型,方差分析表明该模型回归显著,拟合度为97．5％,可以用于预测表面粗糙度和优化工艺参数．     

低能斜入射离子束诱导单晶硅纳米结构与光学性能研究

为了研究低能Ar+离子束在不同入射角度下对单晶硅表面的刻蚀效果及光学性能,使用微波回旋共振离子源,对单晶Si(100)表面进行刻蚀,采用原子力显微镜、非接触式表面测量仪和傅里叶变换红外光谱仪对刻蚀后硅片的表面形貌、粗糙度和光学透过率进行了测量.实验结果表明:当离子束能量为1000 eV、束流密度为265μA·cm-2、刻蚀时间为30min时,离子束入射角度从0°增加到30°,样品表面出现条纹状结构.入射角度在0°～15°,随着角度增加,样品表面粗糙度增加,条纹周期减小,光学透过率提高;而在15°～ 30°范围内,随着角度增加,粗糙度开始减小,条纹周期增大,同时光学透过率降低.继续增加入射角度,条纹状结构逐渐消失,入射角度到45°时,粗糙度和光学透过率达到最小值;增加入射角度到55°,样品表面出现自组织点状结构,表面粗糙度急剧增大,光学透过率随着角度增加开始增加;继续增加离子束入射角度到80°,表面粗糙度和光学透过率继续增加,样品表面呈现出均匀有序的自组织柱状结构;此后,随着入射角度的增加,表面粗糙度又开始减小,光学透过率降低.自组织条纹结构到柱状结构的转变是溅射粗糙化和表面驰豫机制相互作用的结果.     

脉冲激光沉积制备类金刚石薄膜的结构和光学性质

采用脉冲激光沉积方法在Si(100)衬底上制备了类金刚石薄膜,利用椭圆偏振光谱,拉曼光谱及X光电子能谱研究了衬底温度对薄膜的结构和光学性质的影响.结果表明较低衬底温度制备的薄膜的光学常数具有典型的类金刚石特征.衬底温度的升高导致了薄膜的有序化,使得薄膜的sp3键成分改变,从而影响了薄膜的光学常数.衬底温度过高,导致薄膜严重石墨化,表面粗糙度增加,不利于制备高质量类金刚石薄膜.     

光学干涉法测量微小表面粗糙度的应用

针对毫米级小尺寸曲面粗糙度测量的难点,文章简述了几种常用测量方法,分析了粗糙度样板比对测量、印模法间接测量、探针法的优缺点。详述了光学干涉法的原理、试验结果及分析,相比其他方法,光学干涉法具有高精度、测量范围多变、被测对象型面要求低、测量不损伤零件表面的优点,更加适合测量小尺寸表面。     

金刚石膜红外光学性质的研究

采用热灯丝化学气相沉积(CVD)方法,通过独特的衬底表面预处理工艺及控制沉积参数,制备出了晶粒细、表面光滑的单片金刚石膜样品。采用SEM观察了样品生长面的表面形貌,通过激光Raman对样品进行了金刚石结构的确认。在450～4000cm~(-1)范围测试了金刚石膜样品的红外光学透过谱,通过分析认为:平均透过率随波长减小而衰减主要是由于金刚石膜生长面的表面粗糙度引起光谱散射造成的。     

一种新型的表面粗糙度非接触测量系统

本文介绍了一种新型的用于表面粗糙度非接触测量系统，该系统能用于软金属材料工程表面，纸张、木材、橡胶等非金属表面，光学元件、集成电路表面以及皮肤、动植物等表面的表面粗糙度测量。     

纳滤膜的场发射扫描电镜、能量色散X射线、原子力显微镜珊傅里叶转换红外光谱分析

利用场发射扫描电镜、能量色散X射线分析、原子力显微镜与傅里叶转换红外光谱技术,对NF45纳滤膜的表面形态、孔径分布进行了分析研究,同时考察了大豆乳清液的纳滤膜污染特征。研究表明：NF45膜的孔径范围小于0．5nm,膜孔分布均匀,平均表面粗糙度为9．4nm,波峰高度是纳米级;而污染膜面基本表现为无数小葡萄球状的低聚糖类物质组成的块状,且污染物层分布很不均匀,波动很大,平均表面粗糙度为439．7nm,波峰高度是微米级的。     

离子束倾斜入射抛光对表面粗糙度的影响

基于光学元件离子束高精度确定性抛光技术,在自行研制的离子束抛光机床上,本文研究了离子束倾斜入射抛光对光学材料熔石英表面粗糙度的影响.为了在离子束抛光中改善表面粗糙度,采用了0°～80°之间不同入射角度的离子束倾斜抛光和倾斜45°入射均匀去除两种实验方案进行研究,其中不同入射角度抛光实验研究结果表明:离子束垂直入射抛光较难改善表面粗糙度,倾斜入射抛光可以较好地改善表面粗糙度,入射角为30°～60°之间时抛光效果最佳,表面粗糙度得到明显改善;倾斜45°入射均匀去除抛光实验结果表明表面粗糙度的RMS值由抛光前(0.92±0.06)nm下降到(0.48±0.04)nm,提高了光学零件的表面质量,验证了离子束倾斜入射抛光可以较好地改善表面粗糙度,实现了离子束倾斜抛光超光滑表面的生成.     

成型方法对纳米纸表面形貌与光学性能的影响

通过TEMPO氧化、高压均质作用成功从机械预处理后的针叶木纤维中,抽离出直径20~25nm、长度几百纳米到几微米的纤维素纳米纤丝(CNFs);然后以此为原料分别采用浇铸、真空抽滤的方法制备纳米纸。使用环境扫描电镜,原子力显微镜、紫外/可见/近红外分光光度计研究了不同成型方法对纳米纸的表面形貌、表面粗糙度、透光率和光学雾度等性能的影响。结果表明,浇铸法与真空抽滤法相比,通过浇铸法制备的纳米纸表面更加光滑(均方根表面粗糙度为3.3nm);具有更加优异的光学性能,在600nm处透光率为89%,在550nm处雾度为2.9%,此浇铸法更适合于制备高透明高清晰的纳米纸。     

绒面AZO干法制备及性能研究

利用射频溅射方法,制得AZO透明导电膜,并用离子束刻蚀制备绒面,得到绒面AZO透明导电膜。比较刻蚀前后光电性能及表面形貌,发现透过率稍有下降,在可见光波段透过率在80%以上;电阻率略有上升,但仍保持在10-3?·cm数量级,最低为2.91×10-3?·cm;刻蚀后薄膜表面形貌变化较大,大多数薄膜表面呈现"坑状"结构,横向尺寸在0.5?1.0μm,开口角在120°左右,表面粗糙度从7.29nm上升到36.64nm。薄膜具有较好的表面微结构,在作太阳能电池前电极方面有较好的应用前景。     

Comparative study of physical properties of vapor chopped and nonchopped Al2O3 thin films

Aluminium oxide being environmentally stable and having high transmittance is an interesting material for optoelectronics devices. Aluminium oxide thin films have been successfully deposited by hot water oxidation of vacuum evaporated aluminium thin films. The surface morphology, surface roughness, optical transmission, band gap, refractive index and intrinsic stress of Al₂O₃ thin films were studied. The cost effective vapor chopping technique was used. It was observed that, optical transmittance of vapor chopped Al₂O₃ thin film showed higher transmittance than the nonchopped film. The optical band gap of vapor chopped thin film was higher than the nonchopped Al₂O₃, whereas surface roughness and refractive index were lower due to vapor chopping.     

Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation

Polycrystalline Cd_0.96Zn_0.04Te thin films are deposited onto glass substrates (Corning 7059) kept at room temperature by vacuum evaporation. The films exhibit zinc blende structure with predominant (1 1 1) orientation. The rms roughness of the films evaluated by atomic force microscope is 3.7 nm. The band gap energy of the films measured by optical transmittance measurement is 1.539 eV. The photoluminescence (PL) spectrum of the films shows intense emission due to free and bound exciton recombination and no emission associated with crystal imperfection and PL line shapes give indications of the high quality of the layers. These films have been implanted with properly mass analyzed Boron ions (¹⁰B⁺) and the effect of implantation has been analyzed by X-ray diffraction, Raman scattering and optical transmittance measurements and the results are explained on the basis of the implantation induced surface roughness and lattice disorder.     

A low‐cost and reliable optical inspection system for rapid surface roughness measurements of polycrystalline thin films

Excimer laser crystallization is a well‐known industrially used technique to produce high‐performance polycrystalline silicon thin films on the commercially available inexpensive glass substrates for the development of high‐performance low temperature polycrystalline silicon thin‐film transistors in active matrix flat panel displays. A rapid optical measurement system for rapid surface roughness measurement of polycrystalline silicon thin films was developed in this study. Two kinds of thicknesses of polycrystalline silicon thin films were used to study rapid surface roughness measurements. Six different incident angles were employed for measuring surface roughness of polycrystalline silicon thin films. The results reveal that the incident angle of 20° was found to be a good candidate for measuring surface roughness of polycrystalline silicon thin films. Surface roughness (y) of polycrystalline silicon thin films can be determined rapidly from the average value of reflected direct current voltage (x) measured by the optical system developed using the trend equation of y = –8.9854x + 91.496. The maximum measurement error rate of the optical measurement system developed was less than 5.72%. The savings in measurement time was up to 83%.     

真空度对TiO_2薄膜光学和结构特性的影响

为制备高性能TiO2光学薄膜,采用离子束辅助,电子束蒸发沉积的方法,研究不同真空度对薄膜性能的影响。真空度随真空室内通氧量增大从1.3×10-3Pa变化到2.5×10-3Pa,得到不同光学和结构特性的TiO2薄膜。采用分光光度计测试其光谱,SEM测试其表面形貌。测试结果发现,TiO2薄膜的透过率峰值随真空度降低而增大,折射率和消光系数随真空度降低而减小,薄膜表面形貌随真空度降低从致密变粗糙。在真空度2.0×10-3Pa的工艺条件下,成膜质量最佳,此时最大透过率92%,折射率在2.45～2.20之间,消光系数在10-4以下。根据Cauchy公式拟合其色散规律,拟合曲线和采用包络法计算得到的曲线较好重合,折射率随波长的变化公式为n(λ)=2.12+5.69×104/λ2+8.07×107/λ4。     

Design and fabrication of a microlens on the sidewall of an optical fiber with a metallized 45 degrees end face

We propose a method for designing a self-aligned microlens. We have improved its fabrication by employing metallization on a 45 degrees angled surface of the optical fiber. We designed the focal length of the microlens to be 14.0 microm, considering the dimensions of a scanning near-field optical microscopy (SNOM) probe, and we calculated possible dimensions of diameter and height by the ray-tracing method. The modeling of lens formation was also carried out with two assumptions: no volume change and no movement of peripheral parts of the photoresist (PR) on the substrate during reflow. To fabricate a microlens of diameter 16.0 microm and height 5.0 microm we exposed a coated PR to UV light guided into the optical fiber, followed by optimized reflow of 150 degrees C for 2 min. For this microlens the focal length and the beam waist were 14.0 and 1.4 microm, respectively. This lens can be used for compact optical data storage.     

Polymer MEMS-based Fabry-Perot shear stress sensor

This paper reports a novel optical fiber-based micro-shear stress sensor utilizing a flexible membrane and double SU-8 resist structures as a moving micro-mirror, together with an optical fiber as a micro-Fabry-Perot interferometer. This sensor can be employed in air or liquid environments with high sensitivity because of its waterproof design. Through UV lithography processes on thick SU-8 resist, the roughness of the reflection surface has approached 7 nm (Ra value), suitable for optical applications. A single-mode optical fiber is employed for detecting the displacement of the floating element induced by shear stress. Tests have been carried out successfully and a detection possibility of 10 nm-displacement of the floating element and a displacement sensitivity of 0.128 nm/nm (spectrum shift/floating element displacement) has been demonstrated. The temperature coefficient of this fiber-optic sensor has been characterized to be 3.4 nm/K linearly from 25 to 48/spl deg/C. Fluid tests have also been performed by placing the sensor inside the inner wall of a precisely machined rectangular channel and the result shows a sensitivity of 0.4 nm/ml/min (spectrum shift/flow rate), corresponding to a shear stress resolution of 0.65 Pa/nm (shear stress/spectrum shift). The minimum detectable shear stress is thereby estimated as 0.065 Pa from the reading resolution of the spectrometer of 0.1 nm, comparable to its counterparts with resolutions from 0.1-1 Pa.     

Optical study of zinc blend SnS and cubic In2S3:Al thin films prepared by chemical bath deposition

Multilayers of zinc blend SnS crystalline thin film have been deposited onto glass substrates by a chemical bath deposition (CBD) method. The envelope method, based on the optical transmission spectrum taken at normal incidence, has been successfully applied to determine the layer thickness and to characterize optical properties of thin films having low surface roughness. Optical constants such as refractive index n, extinction coefficient k, as well as the real (??_r) and imaginary (??_i) parts of the dielectric constant were determined from transmittance spectrum using this method. Obtained low value of the extinction coefficient in the transparency domain is a good indication of film surface smoothness and homogeneity. To perform the heterojunction structure based on SnS absorber material, cubic In₂S₃:Al was deposited on SnO₂:F/glass as window layer using CBD with different aluminum content. Optical properties of these films were evaluated.     

Study of the moderate-temperature growth process of optical quality synthetic diamond films on quartz substrates

Growth of undoped and boron-doped diamond films on quartz substrates at moderate temperature of 500 °C by microwave plasma chemical vapor deposition method was studied in terms of growth rate, surface roughness and optical transmittance. Similar density of diamond seed particles on quartz surfaces seeded mechanically before the deposition process and diamond grains within diamond films grown on those substrates is observed. The growth rate is found similar to that reported for diamond deposited on silicon substrates in the same plasma deposition system, although with substantially higher activation energy. Furthermore, increased level of dopant concentration in the gas mixture resulted in a decrease of the growth rate, while a gradual reduction of the surface roughness occurred at high dopant levels. Overall, the highest measured regular optical transmittance of the undoped diamond film on quartz was 45% at 1100 nm (including quartz absorption), whereas that of boron-doped diamond peaked 5% at 700 nm (tail absorption of boron centers).