基于变压器匹配的5G通信手机功率放大器设计

基于AWSC 2 μm的HBT工艺,设计了一种用于5G通信N77频段(3.3～4.2 GHz)的功率放大器。采用变压器匹配的方式,显著提高了功率放大器的增益、输出功率和功率附加效率,解决了放大电路级间匹配较难的问题。仿真和测试结果表明,在N77工作频段内,该功率放大器的增益为36～38 dBm,输出功率1 dB压缩点为37 dBm,输出功率1 dB压缩点处的功率附加效率为49.3 %,输出功率28.5 dBm处的功率附加效率为16.5 %、相邻频道泄漏比为-38.2 dBc。     

应用于WiFi6的新型高线性度功率放大器设计

针对WiFi 6的设备需求,设计了一款工作在5.15 GHz～5.85 GHz的高线性度砷化镓异质结双极型晶体管射频功率放大器。为了保证大信号和高温下功率管静态工作点的稳定性,采用了一种新型有源自适应偏置电路。对射频功率检测电路进行了设计和改进,有效降低了射频系统的功耗。针对各次谐波分量产生的影响,对输出匹配网络进行了优化。仿真结果表明：该射频功率放大器芯片小信号增益达到了32.6 dB;在中心频率5.5 GHz时1 dB压缩点功率为30.4 dBm,功率附加效率超过27.9%;输出功率为26 dBm时,三阶交调失真低于-40 dBc。实测数据表明：小信号增益大于31.4 dB;5.5 GHz时1 dB压缩点功率为29.06 dBm;输出功率为26 dBm时,三阶交调失真低于-30 dBc。当输出功率为20 dBm时,二次三次谐波抑制到-30 dBc和-45 dBc。     

优化偏置点的SiGe功率放大器设计

采用0.18 μm SiGe BiCMOS工艺,设计了应用于2.4 GHz频段无线局域网的功率放大器。着重测试分析了偏置点对放大器输出信号误差矢量幅度和效率的影响。发现通过优化偏置点,可提高功率放大器的最大线性输出功率和效率。电路采用三级单端放大结构,集成了偏置电路、输入匹配和级间匹配电路。在优化的偏置点下测试表明,在2.45 GHz频率处增益为26.6 dB,1 dB压缩点处输出功率为23.6 dBm。对于IEEE 802.11g 54 Mbps的调制信号,误差矢量幅度为5.6%时,线性输出功率达到16.6 dBm。     

一种温度不敏感的高线性功率放大器

设计了一种温度不灵敏的高线性度的射频功率放大器芯片,采用新颖的带温度反馈环路的有源片上自适应偏置电路,该电路降低了温度引起的放大器集电极直流电流分量的变化量,补偿了由温度变化而引起的性能偏差,进而有效提高了放大器的线性度。基于这个温度不灵敏的偏置结构采用InGaP/GaAs HBT工艺设计了一个工作在2110~2170 MHz频段的功率放大器。测试结果表明,该功放在工作频段内的增益大于等于35.3 dB;在中心频率2140 MHz处,1 dB功率压缩点大于33 dBm,功率附加效率在输出功率24.5 dBm时为18%;使用LTE_FDD调制信号,获得邻信道功率比为-47 dBc。在环境温度为-40℃、+25℃和+80℃条件下,功放的增益平坦度较好,增益变化量小于1.5 dB,输出级集电极电流基本不变,有效降低了功放对温度的敏感性。     

应用于LTE band1的高效率功率放大器设计

设计了一种应用于LTE band1的带有自适应线性化偏置电路的高效率双链式HBT功率放大器。该电路基于InGaP/GaAs HBT工艺设计,通过控制偏置电路电压来选择高功率和低功率模式,对高功率模式仿真和测试结果进行分析。通过调试,最终高功率模式输出功率为28dBm时,增益为27.5dB,功率附加效率为43%,ACPR为-38dBc。在低功率模式输出功率为16dBm时有21%的功率附加效率。     

用于无线通信的SiGe异质结双极型晶体管AB类功率放大器

报道了一种性能良好的SiGe功率放大器,具有用于无线通信的前景.在B类模式下工作时,输出功率可以达到30dBm.在AB类模式下,电源电压为4V工作时,1dB压缩点输出功率(P1dB)为24dBm,输出功率三阶交截点(TOI)为39dBm.最大的功率附加效率(PAE)和在1dB压缩点的功率附加效率分别达到34%和25%.处理CDMA信号时的邻道功率抑制超过42dBc,符合IS95标准.     

用于无线通信的SiGe异质结双极型晶体管AB类功率放大器

报道了一种性能良好的SiGe功率放大器,具有用于无线通信的前景.在B类模式下工作时,输出功率可以达到30dBm.在AB类模式下,电源电压为4V工作时,1dB压缩点输出功率(P1dB)为24dBm,输出功率三阶交截点(TOI)为39dBm.最大的功率附加效率(PAE)和在1dB压缩点的功率附加效率分别达到34%和25%.处理CDMA信号时的邻道功率抑制超过42dBc,符合IS95标准.     

InGaP/GaAs HBT微波功率放大器的设计

采用模拟退火算法提取出异质结双极晶体管器件的大信号Gummel-Poon模型参数,利用所提取出的模型参数设计出具有很低静态功耗的1900MHz两级AB类功率放大器.该功放的功率增益为26dB,1dB压缩点输出功率为28dBm,对应的功率附加效率和邻近信道功率比分别为38.8%、-30.5dBc,1dB压缩点处的各阶谐波功率均小于-40dBc.     

一种0.13 μm CMOS K波段宽带功率放大器

基于0.13 μm CMOS工艺,采用多频点叠加的方式,设计了一种K波段宽带功率放大器。输入级采用晶体管源极感性退化方式,实现了宽带输入匹配。驱动级采用自偏置共源共栅放大器,为电路提供了较高的增益。输出级采用共源极放大器,保证电路具有较高的输出功率。后仿真结果表明,在26 GHz处,该功率放大器的增益为22 dB,－3 dB带宽覆盖范围为22.5~30.5 GHz,输出功率1 dB压缩点为8.51 dBm,饱和输出功率为11.6 dBm,峰值附加功率效率为18.7%。     

基于场效应管阻抗参数测试的宽带功率放大器优化设计

设计了一个工作在800～1250MHz的宽带线性高功率放大器.用负载牵引方法测试了LDMOS场效应管宽带内的大信号阻抗参数,利用测得的阻抗参数优化设计了功放的匹配电路.实测功放的1dB压缩点输出功率大于44.5dBm,二次谐波小于-25dBc,输出功率为38.5dBm时双音测试三阶交调(IM3)优于-44dBc.     

Linearity Improvement of a Power Amplifier Using a Series LC Resonant Circuit

A radio frequency power amplifier microwave monolithic integrated circuit with a series LC resonant circuit as well as a bias control circuit for wide-band code division multiple access application is presented. The linearizer that consists of a series LC resonant circuit and base-emitter junction of a bias transistor operates as a diode rectifier circuit. A comparison between the circuits with and without the linearizer has been demonstrated. The power amplifier (PA) with the series LC resonant linearizer exhibits adjacent channel leakage ratio-1 (ACLR1) of -37.2 dBc at output power of 27 dBm, a 5.6 dB improvement compared to the circuit without the linearizer. The bias control circuit reduces consumed average dc current from 83 mA to 57 mA for efficiency improvement. The linearized PA exhibits 1-dB compression point (P₁dB) of 29.3 dBm, power-added efficiency of 45.7%, and power gain of 20.6 dB at low quiescent current of 37 mA with a 3.4 V single supply.     

A 5.7–6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit

This paper describes the design of a 5.7–6.4GHz GaAs Heterojunction bipolar transistor (HBT) power amplifier for broadband wireless application such as wireless metropolitan area networks. A bias circuit is proposed which enhances the power gain and provides a good linearity. Using the wideband matching network tech-niques with trap circuits embedded to filter the harmonics and the diode-based linearizing techniques, a broadband power amplifier module was obtained which exhibited a gain above 28dB. This is about 1dB improvement com-pared with those normal bias circuits at a supply volt-age of 5V in the frequency range of 5.7–6.4GHz, measured with Continuous wave(CW) signals. The saturated output power was greater than 33dBm in 5.7–6.4GHz and the out-put 1dB compression point was greater than 31dBm. The phase deviation was less than 5 degrees when the output power below 33dBm. The second and third order harmonic components were also less than -45dBc and -50dBc.     

一种带功率检测和自适应偏置的CDMA功率放大器

设计了一款包含功率检测和自适应线性化偏置电路的CDMA功率放大器,功率检测器能根据输入信号的大小来调整功率管的偏置点,大幅提升低功率输出时的效率,从而提升系统整体效率;自适应线性化偏置能有效抑制功率放大器的增益压缩和相位失真,改善其线性度.采用2 μm InGaP/GaAs HBT晶体管工艺成功流片,测试结果表明,与普...     

Linearised HBT MMIC power amplifier with partially RF coupled active bias circuit for W-CDMA portable terminals applications

A highly linear MMIC power amplifier for wideband code-division multiple-access (W-CDMA) portable terminals has been devised and implemented with a new integrated on-chip lineariser. The proposed lineariser, consisting of an InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit partially coupled to RF input power together with a feedback capacitor, effectively improves gain compression with little insertion power loss and no additional die area. The optimised lineariser improves maximum output power (P1 dB) by 2 dB and adjacent channel leakage power ratio (ACLR) by 4 dB, and the implemented HBT MMIC power amplifier exhibits a P1 dB of 30 dBm, a power gain of 30 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and an ACLR of -34 dBc at 27 dBm of output power.     

PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit

A personal communications service/wide-band code division multiple access (PCS/W-CDMA) dual-band monolithic microwave integrated circuit (MMIC) power amplifier with a single-chip MMIC and a single-path output matching network is demonstrated by adopting a newly proposed on-chip linearizer. The linearizer is composed of the base-emitter diode of an active bias transistor and a capacitor to provide an RF short at the base node of the active bias transistor. The linearizer enhances the linearity of the power amplifier effectively for both PCS and W-CDMA bands with no additional DC power consumption, and has negligible insertion power loss with almost no increase in die area. It improves the input 1-dB gain compression point by 18.5 (20) dB and phase distortion by 6.1/spl deg/ (12.42/spl deg/) at an output power of 28 (28) dBm for the PCS (W-CDMA) band while keeping the base bias voltage of the power amplifier as designed. A PCS and W-CDMA dual-band InGaP heterojunction bipolar transistor MMIC power amplifier with single input and output and no switch for band selection is embodied by implementing the linearizer and by designing the amplifier to have broad-band characteristics. The dual-band power amplifier exhibits an output power of 30 (28.5) dBm, power-added efficiency of 39.5 % (36 %), and adjacent channel power ratio of -46 (-50) dBc at the output power of 28 (28) dBm under 3.4-V operation voltage for PCS (W-CDMA) applications.     

5~6GHz自适应线性化偏置的InGaP/GaAs HBT功率放大器

针对高质量无线局域网的传输需求,设计了一款工作在5~6 GHz的宽带磷化镓铟/砷化镓异质结双极型晶体管(InGaP/GaAs HBT)功率放大器芯片。针对HBT晶体管自热效应产生的非线性和电流不稳定现象,采用自适应线性化偏置技术,有效地解决了上述问题。针对射频系统的功耗问题,设计了改进的射频功率检测电路,以实现射频系统的自动增益控制,降低功耗。通过InGaP/GaAs HBT单片微波集成电路(MMIC)技术实现该功率放大器芯片。仿真结果表明,功放芯片的小信号增益达到32 dB;1 dB压缩点功率为28.5 dBm@5.5 GHz,功率附加效率PAE超过32%@5.5 GHz;输出功率为20 dBm时,IMD3低于-32 dBc。     

An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets

We demonstrate a new linearized monolithic microwave integrated circuit smart power amplifier of extraordinary high power-added efficiency (PAE), especially at the most probable transmission power of wide-band code-division multiple-access handsets. A PAE of 21% at 16 dBm of output power, which is the maximum bound of the most probable transmission power in IS-95 systems, was obtained, as well as 40% at 28 dBm, the required maximum output power, with a single-chip MMIC power amplifier. The power amplifier has been devised with two InGaP-GaAs heterojunction bipolar transistor amplifying chains parallel connected, each chain being optimized for a different P/sub 1dB/ (1-dB compression point) value: one for 16 dBm for the low-power mode, targeting the most probable transmission power, and the other for 28 dBm for the high-power mode. The high-power mode operation shows 40% of PAE and -30 dBc of adjacent channel leakage power ratio (ACLR) at the maximum output power of 28 dBm. The low-power mode operation exhibits -34 dBc of ACLR at 16 dBm with 14 mA of a quiescent current. This amplifier improves power usage efficiency and, consequently, the battery lifetime of the handset by a factor of three.     

基于GaN HEMT的高线性星载Doherty功率放大器设计北大核心CSCD

在射频通信链路中,功率放大器决定了发射通道的线性、效率等关键指标。卫星通信由于是电池供电,对功率放大器的工作效率要求比较高。文章基于GaN HEMT晶体管采用对称设计完成了一款高效率的Doherty功率放大器。测试结果表明:该Doherty功放的功率增益大于29 dB;1 dB压缩点功率(P_(1 dB))大于35 dBm;在35 dBm输出时,其功率附加效率(PAE)大于47.5%,三阶交调失真(IMD3)大于35 dBc;在功率回退3 dB时,其PAE大于37%,IMD3大于32 dBc。     

一种输出匹配可调的、高线性度宽带功率放大器

采用自适应偏置技术和有源电感实现了一款输出匹配可调的、高线性度宽带功率放大器(PA)。自适应偏置技术抑制了功放管直流工作点的漂移,提高了PA的线性度。有源电感参与输出匹配,实现了输出匹配可调谐,该策略可调整因工艺偏差、封装寄生造成的输出匹配退化。利用软件ADS对电路进行验证,结果表明,在4 GHz频率下,输入1dB压缩点(Pin 1dB)为-7dBm,输出1dB压缩点(Pout 1dB)为11dBm,功率附加效率(PAE)为8.7%。在3.1GHz~4.8 GHz频段内,增益为(20.3±1.1)d B,输入、输出的回波损耗均小于-10dB。